XE34 ESS Electronic Devices and Structures.
1. lecture
Solid state electronics. The energy band structure. Valence band. Conduction band. Forbidden
energy gap. The Fermi level. Intrinsic and extrinsic semiconductor. P-type semiconductor, Ntype semiconductor. Compensated semiconductor. Work function of metals and semiconductors.
Electron affinity.
2. lecture
Current flow in semiconductors. Drift and diffusion current. The Einstein relation. The continuity
equation. The transport equation. The Poisson's equation. Applications of the equations.
3. lecture
The P-N junction. Types of the junctions. Step junction and linearly graded junction. Symmetric
and asymmetric junction. One-sided step junction. Methods of forming P-N junctions.
4. lecture
P-N junction in equilibrium. Depletion layer approximation. Built-in potential. Solution of the
continuity equation. Short-base and long-base diodes. Depletion and diffusion capacitance of a
P-N junction, injection efficiency. Si and Ge diodes. Circuit models for junction diode. Diode
structures, properties and. practical applications. Rectifiers, limiting and clamping circuits.
Voltage multipliers.
5. lecture
Varactor diode. Varactor capacitance-voltage law. Tunnel diode. Voltage-current characteristics
of the tunnel diode. Basic parameters and properties. Application of varicap and tunnel diode.
Small-signal equivalent circuit. The backward diode. Zener diode. Characteristics, parameters,
applications.
6. lecture
Bipolar junction transistors (BJT). Basic structure and theory. Homogenous - base BJT. Gradedbase BJT. Principle of operation. Ebers-Moll equations. Regions of operation. Common base and
common emitter connection of BJT. Voltage-current characteristics for CB and CE connection
and operating region. Early voltage.
7. lecture
Hybrid parameters of a BJT. Forward current gain for CB and CE connection. Ac equivalent
circuit diagram of a BJT. Transconductance and output resistance, input resistance, base
charging capacitance, input capacitance.
8. lecture
Frequency response of transistors. Common base cut-off frequency, common emitter cut-off
frequency, relation between the frequencies. The current gain bandwidth (transition ) frequency .
9. lecture
Transistor as an amplifier. Basic single-stage BJT amplifier configurations. Graphical
representation of transistor characteristics. Safe operating area (SOA). Analysis of transistor
circuits at DC. Biasing the BJT for discrete circuit design. Bias stabilization on discrete circuits.
10. lecture
Junction field effect transistors (JFETs). Device structure. Biasing consideration. Physical
operation. Drain and transfer current-voltage characteristics: linear region, saturation region,
break-down region. Large-signal model, parameters: pinch-off voltage, saturation voltage,
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saturation current.
11. lecture
P-channel JFET, N-channel JFET. Low-frequency small-signal JFET model. Influence of
temperature. Amplification properties of JFET. Applications of JFETs. The MOS structure. Field
effect and inversion. Principles of CCD.
12. lecture
Insulated-gate field effect transistors (IGFETs, MOSFETs). N-channel, P-channel MOSFET.
Enhancement-type N-channel MOSFET. Design, MOSFET operation. Threshold voltage.
Current-voltage characteristics. Saturation region, triode region, cut-off region. MOSFET large
signal model.
13. lecture
FET circuits at DC. Biasing considerations. The FET as a small-signal amplifier. Biasing the
FET in discrete circuit. Basic configuration of single stage FET amplifiers. The depletion mode
MOSFET.
Solar cells and photodiodes.
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Tutorial – calculation
1. Semiconductor material properties
2. Conductivity, generation, recombination
3. Properties of simple semiconductor structures
4. Two terminal devices – calculations using simple models
5. DC h- characteristics of BJR, h parameters determination BJT – DC operating
point calculations
6. BJT – DC operating point calculations
7. Design of a simple BJT amplifier
8. Temperature and supply voltage variation on DC operating point of BJT
9. H – parameters of BJT, application of equivalent circuit
10. FETs – DC characteristics, determination of basic parameters
11. JFET circuits, DC operating point calculations.
12. MOSFET circuits, DC operating point calculations.
13. Revision,Credit
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LITERATURE – REFERENCES
[1] Tyagi, M. S.: Introduction to semiconductor materials and devices. New York, John
Wiley & Sons 1991. 669 pp.
[2] Floyd, Thomas, L.: Elestronic Devices. Third Edition. New York, Macmillan Publishing Company 1992. 931 pp.
[3] Bogart, Theodore, F., Jr.: Electronic De-vices and Circuits. Third edition. New York,
Macmillan Publishing Company 1993. 988 pp.
[4] Kwok, K. Ng: Complete guide to semicon-ductor devices. New York, McGraw-Hill
1995. 667 pp.
[5] Kasap, S. O.:Principlews of Electrical Engineering Materials and Devices. Boston:
McGraw Hill 2000
[6] Streetman, B. G.: Solid state Electronic Devices. Englewood Cliffs, Prentice Hall
1972
[7] Vaníček, F.: ELEKTRONICKÉ SOUČÁSTKY. Principy, vlastnosti, modely. Praha,
Vydavatelství ČVUT 1999. 335 str.
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