Alexandria Higher Institute Of Engineering & Technology (AIET)
Mechatronics and Computer Department
ECE243
Digital electronics
Lecturer
Dr. Amr Mahros & Committee
Year: Second
Date:29/11/2011
Sheet: 2
1. Choose the best answer for the following statements
 EPROM can be
a) UVEPROM
c) either UVEPROM or EEPROM
b) EEPROM
d) none of the above
 Which memory requires periodic refreshing
a) all ROMS
c) SRAM
b) all RAMS
d) DRAM
 Which memory is available in all technologies
a) PROM
c) Mask ROM
e) Answers (a) and (c)
b) EEPROM
d) EPROM
2. Read the following statements carefully and mark them true or false
a.
b.
c.
d.
RAM is a random address memory.
Stored data is lost if power is removed from a static RAM.
Dynamic RAMs must be periodically refreshed to retain data.
ROM is a random output memory. no
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
Use 16 x 4 RAM to create a 16 x 8 RAM.
Use 256 x 4 RAM to create a 256 x 8 RAM.
Design 512 x 4 RAM using 256 x 4 RAM.
Design 256 x 4 RAM using 128 x 4 RAM.
Compare between ROM and RAM.
What does each of the following stand for? a) SRAM
b) DRAM
c) EEPROM
Explain how SRAMs and DRAMs differ.
List the types of read-only memories.
How do PROMs differ from Mask ROMs?
What is a major advantage of a flash memory over a SRAM or DRAM?
How many 16k x 1 RAMs are required to achieve a memory with a word capacity of 16k and a
word length of eight bits?
14. To expand the 16k x 8 memory in question 13 to a 32k x 8 organization, how many more 16k x 1
RAMs are required?
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