B@1 Litteratur

advertisement
B쵆1
Litteratur
/B.1/
/B.2/
/B.3/
/B.4/
/B.5/
/B.6/
/B.7/
/B.8/
/B.9/
/B.10/
/B.11/
/B.12/
/B.13/
/B.14/
/B.15/
/B.16/
/B.17/
J.D. Plummer, M.D. Deal and P.B. Griffin, "Silicon VLSI
Technology, Prentice Hall, New Jersey (2000) Chapter 2.
G. K. Teal, "Semiconductor Materials", Chapter 6 in "Material
Processes", J.F. Yuong and R. Shane editors, Marcel Dekker,
New York (1985).
J. Bardeen and W.H. Brattain, "The Transistor a
Semiconductor Triode", Phys. Rev. 74, 230 (1948).
W. Shockley, M. Sparks and G.K. Teal, "p-n Junction
Transistors", Phys. Rev. 83 pp 151 - 162 (1951).
W. Shockley, "The Theory of
p-n Junctions in
Semiconductors and the Junction Transistor", Bell Sys. Tech.
J. 28, 435 (1949).
G.L. Pearson and C.S. Fuller, "Silicon p-n Junction Power
Rectifiers and Lightning Protectors", Proc. IRE 42 760
(1954).
M. Tannenbaum and D.E. Thomas, "Diffused Emitter and
Base Silicon Transistors", Bell Sys. Tech. J. 35 pp 1-22
(1956).
C.A. Lee, A High Frequency Diffused Base Germanium
Transistor", Bell Sys. Tech. J. 35 pp 22 - 24 (1956).
J.A. Hoerni, "Method of Manufacturing Semiconductor
Devices", U.S. Patent 3,025,589 March 20 1962 (filed May 1,
1959).
J.A. Hoerni, "Planar SiliconTransistors and Diodes", IRE
Electron Devices Meeting, Washington D.C. Oct. 1960.
J.S. Kilby, "Miniaturized Electronic Circuits", U.S. Patent
3,138,743 June 23, 1964 (filed Feb. 6 1959).
R.N. Noyce, "Semiconductor Device and Lead Structure",
U.S. Patent 2,918,877, April 1961 (filed July 30, 1959).
D. Kahng and M.M. Atalla, "Silicon - Silicon Dioxide Field
Induced Surface Devices", IRE - AIEE Solid State Device
Conference, Pittsburg, Penn. 1960.
O. Heil, "Improvement in or Relating to Electrical Amplifiers
and Other Control Devices", British Patent 439,357 Sept. 26,
!939.
W. Shockley, "The Path to the conception of the Junction
Transistor", IEEE Trans. Electron. Dev. ED 23 (1982).
S.M. Sze, "VLSI Technology Overview and Trends", Jap. J.
Appl. Phys. 22, Suppl. 22 - 1, p3 (1983).
H.C. Kirsch, "A One Megabit DRAM", Digest IEEE
International Solid State Circuit Conference, p256 (1985).
/B.18/
/B.19/
/B.20/
/B.21/
/B.22/
/B.23/
/B.24/
/B.25/
/B.26/
/B.27/
G.E. Moore, "Cramming More Components onto Integrated
Circuits", Electronics 38114 - 117 (1965).
R.N. Hall, G.E. Fenner, J.D. Kingsley, T.J. Soltys,and R.O.
Carlson, Phys. Rev. Lett. 9, 366 (1962).
M.I. Nathan, W.P. Dumke, G.Burns, F.H. Dill Jr. and G.
Lasher,Appl. Phys. Lett. 1 62 (1962).
T.M. Quist, R.H. Rediker, R.J. Keyes, W.E. Krag, B. Lax, A.L.
McWhorter and H.J. Zeiger, Appl. Phys. Lett. 1, 91 (1962).
N. Holonyak Jr. and S.F. Bevacqua, Appl. Phys. Lett 1, 82
(1962).
H. Kroemer, Proc. IEEE 51, 17882 (1963).
H. Kressel and H. Nelson, RCA Review 30 106 (1969).
I. Hayashi, M.B. Panish and P.W. Foy, IEEE J. Quantum
Electron. QE 5 211 (1969).
J.J. Hsieh, J.A. Rossi and J.P. Donnelly, Appl. Phys. Lett. 28,
709 (1976).
D.M. Chapin, C.S. Fuller and G.L. Pearson, "A New Junction
Photocell for Converting Solar Radiation into Power", J. Appl.
Phys. 25 pp 676 - 677 (1954).
Download