XPS Study Of Nitrogen-Implanted ZnO Thin Films Obtained By
DC-Magnetron
Reactive Plasma
Tabet, N; Faiz, M; Al-Oteibi, A
ELSEVIER SCIENCE BV, JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED
PHENOMENA; pp: 15-18; Vol: 163
King Fahd University of Petroleum & Minerals
http://www.kfupm.edu.sa
Summary
We have synthesized pure and N-doped ZnO films by reactive plasma in a DCMagnetron sputtering system. Nitrogen was implanted by using an ion gun attached to
an electron spectrometer. The films were characterized by X-ray photoelectron
spectroscopy (XPS), X-ray diffraction (XRD), and scanning electron microscopy
(SEM) to investigate their composition and microstructure. XPS revealed the presence
of two well-resolved peaks in N 1s spectra at about 396.2 and 404.3 eV The peak at
404.3 eV has been assigned to zinc nitrite while the peak at 396.2 eV to zinc nitride.
After annealing the sample at 250 degrees C in air for 1h, one single peak, located at
399.1 eV, was observed. We suggest that this is due to the decomposition of nitrite
and the formation of oxynitride. (C) 2007 Elsevier B.V. All rights reserved.
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