CAPE Simulations
Selected Publications and Presentations on Modeling of Crystal Growth
“Purification and Crystal Plate Growth of CaF2”, K. Pandelisev and S. Motakef, 157 nm Technical
Data Review, International Sematech, Orlando, FL, Dec. 11-13, 2001
“Traveling magnetic field (TMF) applications for material processing”, S. Yesilyurt, R. Grugel, K.
Mazuruk, and S. Motakef, AIAA 2001-5052, presented at Conference on International Space Station
Utilization, 15—18 October 2001, Kennedy Space Center, Florida
“Science of Detached Bridgman growth and Solutocapillary Convection in Solid Solutions Crystals”,
F.R. Szofran, M.P. Volz, S.D. Cobb, A. Cröll, P. Dold, and S. Motakef, AIAA 2001-5002, presented at
Conference on International Space Station Utilization, 15—18 October 2001, Kennedy Space Center,
Florida
"Infrared Extinction Coefficient of LiNbO3 at Temperatures to 1150 C: Th eSemiconductor Behavior
of Metal Oxides at High Temperature", C. Marin, A.G. Ostrogorsky, A. G. Fullon, G.Jundt, and S.
Motakef, Applied Physics Letters, vol. 78, No. 10, (2001) 1379
“Bridgman Growth of Detached GeSi Crystals”, M. P. Volz, M. Schweizer, N. Kaiser, S. D. Cobb, L.
Vujisic, F. R. Szofran, and S. Motakef, International Crystal Growth Conference-11, Kyoto, Japan,
August 2001
“Stability of Detached-Grown Germanium Single Crystals”, M. Schweizer, M.P. Volz , S.D. Cobb, L.
Vujisic, J. Szoke, F.R. Szofran, and S. Motakef, International Crystal Growth Conference-11, Kyoto,
Japan, August 2001
“Melt Motion due to Peltier Marking during Bridgman Crystal Growth with an Axial Magnetic Field”,
C.C. Sellers, J.S. Walker, F.R. Szofran, and S. Motakef, Flow: Turbulence and Combustion 64 (2000)
197.
“X-ray characterization of THM-grown HgCdTe crystals in a rotating magnetic field (RMF)”, B.
Raghothamachar, M. Dudley, D. Gillies , H. M. Volz, R. Matyi, and S. Motakef, International Crystal
Growth Conference-11, Kyoto, Japan, August 2001
“Thermal Stresses During Growth of SiC: Influence of SiC Radiative Properties and Second-Phase” S.
Motakef, A. Worlikar, and L. Vujisic, International Conference on Silicon Carbide and Related
Materials, Research Triangle Park, NC, 1999
“Simulation of Dynamics of PVT Growth: ZnSe”, A. Worlikar, M. Overholt, C.-H., Su, N.
Ramachandran, and S. Motakef, ACCGE-11, Tucson, AZ, August 1999
“Application of the Monte Carlo Technique to Rigorous Modeling of Radiation in Crystal Growth”,
M. R. Overholt, and S. Motakef, ACCGE-11, Tucson, AZ, August 1999
“Analysis of Sapphire Light-Pipe Temperature Sensors”, M.R. Overholt, L. Vujisic, and S. Motakef,
ACCGE-11, Tucson, AZ, August 1999
“The Influence of Thermoelectromagnetic Convection (TEMC) on the Bridgman Growth of
Semiconductors”, S. Yesilyurt, L. Vujisic, F. R. Szofran, Arne Croell, and S. Motakef
“Simulation of THM Growth of II-VI Solid Solutions in the Presence of a Rotating Magnetic Field”, S.
Yesilyurt, D. C. Gillies, and M. Dudley, and S. Motakef, ACCGE-11, Tucson, AZ, August 1999
“Electromagnetic Control of Convection in Semiconductor Melts: Thermoelectromagnetic Convection
(TEMC) and Rotating Magnetic Fields”, S. Yesilyurt, L. Vujisic, and S. Motakef, in Materials
Research in Low Gravity II, N. Ramachandran edt., Proceedings of SPIE Conference, vol. 3792, 1999.
“Numerical Simulation of THM Growth of CdTe in Presence of Rotating Magnetic Fields”, C. K.
Ghaddar, C. K. Lee, D. C. Gillies, and S. Motakef, Journal of Crystal Growth, 205 (1999) 97
“Growth of II-VI Solid Solutions in the Presence of a Rotating Magnetic Field”, S. Yesilyurt, D.C.
Gillies, M. Dudley, R. Matyi, M. Volz, and S. Motakef, 128 th TMS Meeting, San Diego, 1999
“A Numerical Investigation of the Effect of Thermoelectromagnetic Convection (TEMC) on the
Bridgman Growth of Ge1-xSix”, S. Yesilyurt, L. Vujisic, F. Szofran, M. Volz, and S. Motakef, Journal
of Crystal Growth, Journal of Crystal Growth, 207 (1999) 278
“Model-Based Calibration of NASA CGF Furnace”, L. Vujisic and S. Motakef, Journal of Crystal
Growth, 174, 153, 1997
“Reverse Simulation: A Case Study”, L. Vujisic and S. Motakef, 2nd International Conference on
Crystal Growth Modeling, Dubury, Belgium, 1996
"Modeling of Directional Solidification of BSO", C. Lin and S. Motakef, Journal of Crystal Growth,
128, 834,1993.
"Influence of Containment Cartridge on Melt Growth in Space," D. Watring and S. Motakef, AIAA92-0690, AIAA 30th Aerospace Sciences Meeting, Reno, Nevada, 1992
"Residual Convection during Directional Solidification of II-VI Pseudo-Binary Semiconductors," J. C.
Han, P. Becla, and S. Motakef, AIAA-92-0693,AIAA 30th Aerospace Sciences Meeting, Reno,
Nevada, 1992
"Double Diffusive Convection during Directional Solidification of Pseudo-binary II-VI
Semiconductors," Han, J. C., Becla, P., and S. Motakef, Journal of Materials Processing and Mfg.
Science, 1, 195, 1992
"Application of Strong Vertical Magnetic Fields to Growth of II-VI Pseudo-Binary Alloys: HgMnTe,"
J.-C. Han, P. Becla and S. Motakef, Journal of Cyrstal Growth, 121, 394, 1992
"The Flow Regime Map in Rotating-Pedestal CVD Reactors," Biber, C., Wang, C. A., and S. Moakef,
Journal of Crystal Growth, 123, 545, 1991.
"A High Temperature Creep Model for GaAs," S. Motakef, Journal of Crystal Growth," 108, 33-36,
1991.
"A Comparative Study of Thermal Conditions at Onset of Plastic Flow in Various Semiconductors,"
Ozoe, Hiroyuki, and S. Motakef, JSME, International Journal, Series II, 34, No. 1, 65-68, 1991.
"Model-Based Control of Thermal Stresses During LEC Growth of GaAs - Part I: Validation of
Thermal Model," Kelly, K. W. and Koai, K., and S. Motakef, Journal of Crystal Growth, 113, 254264,.1991.
"Model-Based Control of Thermal Stresses During LEC Growth of GaAs - Part II: Crystal Growth
Experiments," Kelly, K. W. Koai, K., and S. Motakef, Journal of Crystal Growth, 113, 265-278, 1991.
"Comparison of Calculated and Measured Dislocation Density in LEC-Grown GaAs Crystals," Kelly,
K. W., Koai, K., and S. Motakef, Journal of Crystal Growth, 113, 279-288, 1991.
"Fundamental Considerations in Creep-Based Determination of Dislocation Density in Semiconductors
Grown from the Melt," S. Motakef, Journal of Crystal Growth, 114, 47, 1991.
"Scaling Laws of Convective Interference with Segregation during Melt Growth of Semiconductors,"
S. Motakef, 1st Intern'l. Workshop on Material Processing in High Gravity, Dubna, USSR, June, 1991
"Interference of Buoyancy-Induced Convection with Segregation during Directional Solidification:
Scaling Laws," S. Motakef, Journal of Crystal Growth, 102, 197-213, 1990.
"Magnetic Field Elimination of Convective Interference with Segregation During Vertical-Bridgman
Growth of Doped Semiconductors," S. Motakef, Journal of Crystal Growth, 104, 833-850, 1990.
"Experimental and Modeling Results on the Influence of Applied Magnetic Fields on Compositional
Uniformity of Directionally Solidified Semiconductors," Becla, P., Han, J. C., and S. Motakef,
Proceedings of XXII Intern'l. Center for Heat and Mass Trans. Symposium on Mfg. and Materials
Processing, Dubrovnik, Yugoslavia, 1990.
"Heat Transfer During Liquid Encapsulated Czochralski Growth of GaAs and Associated Defect
Formation in the Crystal," Kelly, K. W., Koai, K., and S. Motakef, Proceedings of Oji Intern'l.
Seminar on Advanced Heat Trans. in Mfg. and Processing of New Materials, Hokkaido, Japan, 1990.
"Unsteady Heat and Mass Transfer with Phase Change in Porous Slabs: Analytical Solutions and
Experimental Results," Shapiro, A. P, S. Motakef., International Journal of Heat and Mass Transfer,
33, 163-172, 1990
"Effectiveness Limit of Micro-Gravity Processing in Achievement of Diffusion Controlled Growth of
Doped Semiconductors," S. Motakef, AIAA 28th Aerospace Meeting, Reno, Nevada, 1990.
"Magnetic Field Growth of HgMnTe Alloys by the Vertical Bridgman Method," Becla, P. Han, J. C.,
and S. Motakef, Eighth American Conference on Crystal Growth, Vail, Colorado, July, 1990
"The Flow Regime Map for Rotating-Pedestal CVD Reactor," Biber, C. R., Wang, C. A., and S.
Motakef, Eighth American Conference on Crystal Growth, Vail, Colorado, July, 1990
"On-Line Control of Stresses During LEC Growth of GaAs," Koai, K., Kelly, K. W., and S. Motakef,
Eighth American Conference on Crystal Growth, Vail, Colorado, July, 1990
"Mathematical Modeling of Various GaAs Melt Growth Processes," Institute of Solid State Research,
S. Motakef, KFA Julich, Julich, Germany, September, 1990
"Thermal-Field Control of Dislocation Multiplication during LEC Growth of GaAs," S. Motakef,
Mitsubishi Kasei Corp., Tsukuba, Japan, November, 1990
"Comparison of LEC and VGF Processes for Growth of GaAs," S. Motakef, Sumitomo Metal and
Mining, Tokyo, Japan, November, 1990
"Defect Formation during LEC Growth of GaAs," S. Motakef, The Ioffe Physical-Technical Institute,
Leningrad, USSR, August, 1990
"Thermoelastic Analysis of GaAs in LEC Growth Configuration - Part III: Thermal Conditions for
Control of Stresses in Low Pressure Systems," S. Motakef, Journal of Crystal Growth, 96, 201-216,
1989
"Thermoelastic Study of GaAs in VGF Growth Configuration: Limits to the Optimum Growth Rate
and Approaches to its Augmentation," S. Motakef, Journal of Crystal Growth, 98, 711-720, 1989
"Hydrodynamic Control of Solution Inclusion During Crystal Growth of KTiOPO 4 (KTP) from High
Temperature Solution," Bordui, P. F. and S. Motakef, Journal of Crystal Growth, 96, 405-412, 1989
"Thermoelastic Analysis of GaAs in LEC Growth Configuration - Part IV: Effectiveness of Top
Assembly and Bottom Heaters in Control of Stresses in Low Pressure Systems," Cazin-Bourguignon,
A. M., S. Motakef, Journal of Crystal Growth, 96, 390-404, 1989
"Influence of Non Steady Gravity on Natural Convection During Micro-gravity Solidification of
Semiconductors - Part I. Time Scale Analysis," Griffin, P. R. and S. Motakef, Journal of Applied
Micro-gravity, II, 121-127, 1989
"Influence of Non Steady Gravity on Natural Convection During Micro-gravity Solidification of
Semiconductors - Part II. Implications for Crystal Growth Experiments," Griffin, P. R., and S.
Motakef, Journal of Applied Micro-gravity, II 128-132, 1989
"Thermal Modelling and Control of Stress-Induced Dislocation Generation during Melt Growth of
GaAs, Kelly, K. W., Cazin-Bourguignon, A. M., Koai, K., and S. Motakef, Seminar on Intelligent
Processing of Materials, ASM/TMS Meeting, Indianapolis, 1989
"Transport Processes in Manufacturing of Electronic Materials," S. Motakef, Kyushu University,
Institute of Advanced Material Study, Kasuga, Japan, January, 1989
"Control of Chemical Uniformity of Melt-Grown Crystals," S. Motakef, Tokyo University, Tokyo,
Japan, January, 1989
"Modeling of Melt and Vapor Growth Processes," S. Motakef, Nippon Steel Co., Tokyo, Japan,
January, 1989
"Control of Thermal Stresses during LEC Growth of GaAs," S. Motakef, Hitachi Chemicals, Tsukuba,
Japan, January, 1989
"Modeling of Melt and Vapor Growth Processes," S. Motakef, IHI, Tokyo, Japan, January, 1989
"Transient Natural Convection During Micro-Gravity Directional Solidification of Semiconductors:
Time Scale Analysis and Implications for Growth," Griffin, P. R., and S. Motakef, PCH Conference,
Cambridge, MA, June, 1989
"The Effectiveness of Axial Magnetic Fields on HgMnTe Melt Stabilization During Vertical Bridgman
Growth," with Becla, P., Witt, A. F., Wargo, J. M., Dubowski, J. J., and S. Motakef, American
Association for Crystal Growth-East Conference, Atlantic, City, N. J., November, 1989
"Thermoelastic Analysis of GaAs in LEC Growth Configuration - Part II: Temporal Evolution of the
Stress Field," S. Motakef, Journal of Crystal Growth, 88, 341-352, 1988
"Thermoelastic Study of GaAs in VGF Growth Configuration," S. Motakef, American Association for
Crystal Growth-East Conference, Atlantic City, NJ., May, 1988
"Analysis of the Thermo-elastic Stresses in GaAs Crystals Grown by the Bridgman-Stockbarger and the
Liquid Encapsulated Czochralski Methods," S. Motakef, ASME 87-WA/HT-2, 1987
"Effect of Natural Convection and Thermal Transparency of Liquid Encapsulant on Thermal Stresses
During LEC Growth of GaAs," S. Motakef, Int. Journal of Heat and Mass Transfer, 30, 1487-1495,
1987
"Thermal Conditions for Inhibition of Stress Induced Slip in Zinc-Blende Crystals in Czochralski
Growth Configuration," S. Motakef, ASME Journal of Applied Mechanics, 54 , 813-821, 1987
"Dopant Segregation During Vertical Bridgman-Stockbarger Growth with Melt Stabilization by Strong
Axial Magnetic Fields," Matthiesen, D. H., Wargo, M. J., Carlson, D. J., Nakos, J. S., Witt, A. F., and
S. Motakef, Journal of Crystal Growth, 85, 557-560, 1987
"Thermoelastic Analysis of GaAs in LEC Growth Configuration - Part I: Effect of Liquid
Encapsulation on Thermal Stresses," Witt, A. F., and S. Motakef, Journal of Crystal Growth, 80, 3750, 1987
"Analysis of the Fluid Dynamics and Heat Transfer During Micro-Gravity Bridgman-Stockbarger
Growth of Semiconductors in Steady Periodic Gravitational Fields," Griffin, P. R. and S. Motakef,
ASME Paper 87-WA/HT-1, 1987
"Modelling of Crystal Growth Systems”, S. Motakef, Air Force Wright-Patterson Materials Laboratory,
Workshop on Modelling of Materials Processing, Dayton, OH., January, 1987
"Synthesis and Growth of Compound Semiconductors in a Reduced Gravity Environment," Wargo, M.
J., Ygo, S., Patera, A. T., Witt. A. F., and S. Motakef, American Chemical Society, St. Louis,
Missouri., 1987
"Simultaneous Heat and Mass Transfer with Phase Change in a Porous Slab," El Masri, M. A., and S.
Motakef, International Journal of Heat and Mass Transfer, 29, 1503-1512, 1986
"Heat Transfer and Fluid Mechanics Aspects of Crystal Growth," S. Motakef, Short course taught at
NASA Lewis Research Center, Cleveland, OH., 1985
"Defect Formation and Control During LEC Growth of Compound Semiconductors," Witt, A. F., and
S. Motakef, Proceedings of Semi Con -East, Tokyo, 1985