Home address:
Phone:
200 Charles Haltom Ave. Apt. 979-862-1179(Office);979-862-9078(Home)
10G
E-mail:
College station
jianglu@tamu.edu; jianglu@gmail.com
TX 77840
Jiang Lu
Education
Ph.D. Chemical Engineering, (Sep.2000 ~ Present)
Texas A&M University, College Station, TX
GPA 3.9/4.0
Thesis Topic: Doped Ta2O5 High-K Gate Dielectric Materials
and Advanced Metal Gate Electrodes for 45 nm CMOS
Technology
Advisor: Dr. Yue Kuo
B.S. Chemical Engineering, ( Sep.1994 ~ Jun.1998 )
East China University of Science and Technology,
Shanghai, China
GPA3.5/4.0
Honors and awards:
Outstanding Graduate of Shanghai City (1998)
BASF Scholarship (1997)
Excellent Student (1995,1996,1997)
First Class Scholarship (1994,1995,1996,1997)
Working
Experience
Texas A&M University, College Station, TX
Dec.2000 ~ Current
Research Assistant, Thin Film Nano and Microelectronic
Research Lab

Developing new Ta2O5 and HfO2 based high-K gate
dielectric material and metal gate electrode for the future
CMOS technology.

Fabricating MOS capacitors containing high-k gate dielectric
materials and metal gate electrodes

Electrical characterization of MOS capacitors with C-V (HP
4284A) and I-V (HP 4140B, HP 4155C) measurements

Chemical characterization of high-k gate dielectric and metal
nitride gate electrode films with advanced analytical tools,
such as AFM, XPS, EELS, HRTEM, SIMS, XRD and XPS

RF and DC sputtering metal deposition for thin film
transistor (TFT), bipolar devices and Bio-MEMS.

Implementing a load-lock chamber and an in-situ rapid
thermal heating chamber assembly to sputtering system.

Implementing an ex-situ rapid thermal processor (RTP).
Texas A&M University, College Station, TX
Oct. 2002 - Aug. 2004
Project Research Assistant, Cooperation between Thin Film Nano
and Microelectronic Research Lab and International Sematech

Developed passivation coating of 157 nm and 193nm soft
pellicles with 5 nm thin films

Environment test on the 193nm soft pellicles after
passivation coating

Chemical characterization of coated thin film with XPS
and FTIR
National Starch & Chemical Ltd (A Member of ICI Group),
Shanghai, China
1999 - 2000
Technical Sale Representative, Industry Starch Division

Technical sale for the industry starch

On site technical support for the industry starch application
in paper-making process

Planed and arrange new products trail in the production line
Shanghai International Chemical Engineering Corporation,
Shanghai, China
1998 - 1999
Process Engineer, R&D Department
Expertise

Developed a Formaldehyde commercial production process.

Revamped the ammonia plants in China with the new
technology imported from AMMONIA CASALE in Swiss.

Simulated mass and thermal balance process with Pro II
engineering software.
Microelectronics Fabrication - RF and DC Sputtering, Reactive
Ion Etching (RIE), Thermal oxidation in furnace and rapid
thermal heater, Heat treatment (Sintering/Annealing),
Photolithography, Wet Etching, Mask aligning, Vacuum
technology (vacuum chamber, pump, and load-lock chamber)
Electrical Characterization - Four-point probe, HP 4140B (I-V
and quasistatic C-V), HP 4284A (high frequency C-V), HP
4155B (semiconductor parameter analysis and quasistatic C-V)
Chemical Characterization - X-ray photoelectron spectroscopy
(XPS or ESCA), X-ray diffractometry (XRD), Fourier transformed
infrared spectroscopy (FTIR), Secondary ion mass spectroscopy
(SIMS), Atomic force microscope (AFM) and High resolution
transmission electron microscope (HRTEM), Ellipsometry,
Profilometry.
Presentations &
Posters
“Doping of Hafnium Oxide High-K Film with Zirconium”, in
American Vacuum Society Intl. Microelectronic and Interface
Meeting, San Jose, CA, (2005)
“Metal Nitride Gate Electrode Effects on Dielectric Properties of
High-k Gate Dielectrics,” in American Vacuum Society 51
International Symposium, Anaheim, CA, (2004), Abs. # 245,
“Engineering the nm-thick Interface Layer Formed Between a
High-k Film and Silicon,” in Material Research Society Spring
Symposium on High-k Insulators and Ferroelectrics for
Advanced Microelectronic Devices, San Francisco, CA, (2004),
paper #D 3.11
“Hafnium-Doped Tantalum Oxide High k Dielectrics”, in the 1st
International Symposium on High Dielectric Constant Materials,
the Electrochemical Society, Salt Lake City, UT (2002),
Abstract # 379.
Selected
Conference
Proceedings
J. Lu, J. -Y. Tewg, and Y. Kuo, “Engineering the nm-thick
Interface Layer Formed Between a High-k Film and Silicon,”
MRS Symp. Procs. High-k Insulators and Ferroelectrics for
Advanced Microelectronic Devices, paper #D 3.11, 2004.
J. Lu and Y. Kuo, “Electrical and Material Characteristics of the sub
5 nm Hafnium Doped Tantalum Oxide High k Film,” IEEE 4th
NANO 2004 Symp. Procs., TU-P10, 2004.
Y. Kuo, J. Lu, J.-Y. Tewg, and B. Schueler, “The Influence of the
5Å TaNx Interface Layer on Dielectric Properties of the sub 10 nm
Doped Tantalum Oxide High k Film,” Procs. 7th Intl. Symp.
Sputtering and Plasma Processes (ISSP), 21-24, Kanazawa, Japan,
June 11, 2003.
J. Lu and Y. Kuo, “Influence of the 5Å TaNx Interface Layer on
Doped Metal Oxide High k Dielectric Characteristics,” Proc. ECS
2003 Emerging Oxide Symp., PV2003-01, 374-380, 2003.
Y. Kuo, J. Lu, J.-Y. Tewg, and P. A. Zimmerman, “Passivation of
the 157 nm Pellicle with Nanometer Thin Films,” SPIE Photomask
Symp. Proc., 5256-22, 2003.
J. Lu, J.-Y. Tewg, Y. Kuo, and P. C. Liu, “Hafnium-Doped
Tantalum Oxide High k Dielectrics,” Proceedings of 1st Intl. Symp.
High Dielectric Constant Materials: Materials Science, Processing,
Manufacturing, and Reliability Issues, PV 2002-28, pp 105-112,
2003.
J.-Y. Tewg, J. Lu, Y. Kuo, and B. W. Schueler, “Electrical and
Physical Characterization of Zirconium-Doped Tantalum Oxide
Films,” Proceedings of 1st Intl. Symp. High Dielectric Constant
Materials: Materials Science, Processing, Manufacturing, and
Reliability Issues, PV 2002-28, pp 105-112, 2003.
J. Lu, J.-Y. Tewg, Y. Kuo, P. C.Liu, and B. W. Schueler, “Electrical
and Mateial Properties of 10 nm Thick Hf-Doped Tantalum Oxide
High k Dielectrics,” Abst. # 251, AVS 49th Intl. Symp., Nov. 2002.
Y. Kuo, J. Lu, P. Liu, F. M. Daby, and J.-Y. Tewg, in
Proceedings of the 2nd IEEE Conference on Nanotechnology,
2002, p. 251, IEEE (2002).
Journal
Publication
J. Lu, Y. Kuo, and J. -Y. Tewg, “Hafnium-doped Tantalum
Oxide High-K Gate dielectrics,” J. Electrochem. Soc., Submitted,
June 2005.
J. Lu, Y. Kuo, S. Chatterjee, and J. -Y. Tewg, “Metal Nitride Gate
Electrode Effects on Dielectric Properties of HfO2 High-k Gate
Dielectrics,” J. Vac. Sci. Technol B, Submitted, May 2005.
J.-Y. Tewg, Y. Kuo, J. Lu, and B. W. Schueler, “Influence of a 5
Å Tantalum Nitride Interface Layer on Dielectric Properties of
Zirconium-Doped Tantalum Oxide High-k Films,” J.
Electrochem. Soc., accepted, in press 2005.
J.-Y. Tewg, Y. Kuo, and J. Lu, “Zirconium-Doped Tantalum Oxide
Gate Dielectric Films Integrated with Molybdenum, Molybdenum
Nitride, and Tungsten Nitride Gate Electrodes,” J. Electrochem.
Soc., Submitted, accepted, in press 2005.
S. Chatterjee, Y. Kuo, J. Lu, J.-Y. Tewg, and P. Majhi, “Eelectrical
Characteristics of Hafnium Oxide high-k Films with Metal Nitride
Gate Electrode,” Microelectronics Reliability, accepted, in press
2005.
J.-Y. Tewg, Y. Kuo, and J. Lu, “Suppression of Crystallization of
Tantalum Oxide Thin Film by Doping with Zirconium,”
Electrochem. Solid-State Lett., 8, G27 (2005).
J.-Y. Tewg, Y. Kuo, J. Lu, and B. W. Schueler, “Electrical and
Physical Characterization of Zirconium-Doped Tantalum Oxide
Thin Films,” J. Electrochem. Soc., 151(3), F59-F67, 2004.
J. Lu, Y. Kuo, J. -Y. Tewg, and B. Schueler, “Effects of the
TaNx Interface Layer on Doped Tantalum Oxide High-k Films,”
Vacuum, 74(3-4), 539-547, 2004.
Y. Kuo, J. Lu, and J.-Y. Tewg, “Tantalum Nitride Interface
Layer Influence on Dielectric Properties of Hafnium Doped
Tantalum Oxide High Dielectric Constant Thin Films,” Jpn. J.
Appl. Phys., 42(7A), L769-L771, 2003.
Related Courses Microelectronic Processing Engineering, Integrated Circuit &
Sensor Fabrication, Microelectronic Device Design, Solid State
Device, CMOS Device Modeling, Advanced Topic on
Photolithography, Surface Chemistry
Academic
Membership
Student Member of ECS (Electrochemical Society), and MRS
(Material Research Society)