EUROPEAN
CURRICULUM VITAE
FORMAT
PERSONAL INFORMATION
Name
Address
Telephone
Evgenia Petrova Valcheva
DEPARTMENT OF SOLID STATE PHYSICS, FACULTY OF PHYSICS, 5 JAMES BOUCHER
BLVD., 1164 SOFIA, BULGARIA
work: (02)8161898
Fax
E-mail
Nationality
Date of birth
epv@phys.uni-sofia.bg
bulgarian
22.08.1955]
WORK/TEACHING EXPERIENCE
• Dates (from – to)
• Name and address of employer
• Type of business or sector
• Occupation or position held
• Main activities and responsibilities
• Dates (from – to)
• Name and address of employer
• Type of business or sector
• Occupation or position held
• Main activities and responsibilities
• Dates (from – to)
• Name and address of employer
• Type of business or sector
• Occupation or position held
• Main activities and responsibilities
• Dates (from – to)
• Name and address of employer
• Type of business or sector
• Occupation or position held
• Main activities and responsibilities
1997- now
University of Sofia – Faculty of Physics, 5 James Boucher Blvd., Sofia 1164, Bulgaria
Education and science
Assoc. prof.
teaching
1990 - 1997
University of Sofia – Faculty of Physics
Education and science
Assist. Prof.
teaching
1983 - 1990
University of Sofia – Faculty of Physics
Education and science
physicist
teaching and scientific laboratories maintenance
1978 - 1983
Institute of Microelectronics
production of microelectronics elements
technologist
technological control and physical analysis
EDUCATION AND TRAINING
• Dates (from – to)
• Name and type of organization
providing education and training
• Principal subjects/occupational
skills covered
• Title of qualification awarded
• Level in national classification
(if appropriate)
Page 1 - Curriculum vitae of
VALCHEVA, Evgenia Petrova
1998
University of Sofia – Faculty of Physics, 5 James Boucher Blvd., Sofia 1164, Bulgaria
Condenced matter physics
Doctor
• Dates (from – to)
• Name and type of organization
providing education and training
• Principal subjects/occupational
skills covered
• Title of qualification awarded
• Level in national classification
(if appropriate)
1973-1978
University of Sofia – Faculty of Physics, 5 James Boucher Blvd., Sofia 1164, Bulgaria
Solid state physics
Master
PERSONAL SKILLS
AND COMPETENCES
Acquired in the course of life and career
but not necessarily covered by formal
certificates and diplomas.
MOTHER TONGUE
BULGARIAN
OTHER LANGUAGES
• Reading skills
• Writing skills
• Verbal skills
ENGLISH
excellent
excellent
excellent
RUSSIAN
excellent
excellent
excellent
GERMAN
BASIC
BASIC
BASIC
SOCIAL SKILLS
[ Describe these competences and indicate where they were acquired. ]
• Reading skills
• Writing skills
• Verbal skills
• Reading skills
• Writing skills
• Verbal skills
AND COMPETENCES
Living and working with other people, in
multicultural environments, in positions
where communication is important and
situations where teamwork is essential
(for example culture and sports), etc.
ORGANISATIONAL SKILLS
AND COMPETENCES
Coordination and administration of
people, projects and budgets; at work, in
voluntary work (for example culture and
sports) and at home, etc.
TECHNICAL SKILLS
AND COMPETENCES
With computers, specific kinds of
equipment, machinery, etc.
DRIVING LICENCE(S)
Page 2 - Curriculum vitae of
VALCHEVA, Evgenia Petrova
Coordination and administration of projects, funded by NCF- MON, scientific fund of Sofia
University; international projects – DAAD, STINT;
Referee of scientific journals – PRB, PRL, pss.
Member of Governing body of Union of Physicists in Bulgaria
COMPUTER SCILLS:
- Microsoft Office
- Graphic design(Photoshop, CorelDraw)
Specific kinds of equipment - scientific laboratory equipment
Category B
ANNEXES:
1. List of publications
2. Participation in national
and international projects
3. Participation in
conferences, congresses etc.
1. List of publications - attached annexe 1
2. Participation in national and international projects
Coordination and administration of 2 and participating in 9 projects, funded by NCF- MON;
Coordination and administration of 3 and participating in 3 projects, scientific fund of Sofia
University
Coordination and administration 2 international projects – funded by DAAD and STINT.
3. Participation in conferences, congresses - 18
List of publications
2002
1. T. Paskova, E. Valcheva, B. Monemar, review paper, “Thick GaN Films Grown on
Sapphire: Defects in Highly Mismatched Systems”, Defects and Diffusion in
Semiconductors IV, (Trans Tech Publications, 2002), ed. D.J. Fisher, Defect and Diffusion
Forum, vol.200-202 (2002), p.1-28.
2. E. Valcheva, T. Paskova, P. O. Å. Persson, L. Hultman, and B. Monemar, “Misfit defect
formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy”, Appl.
Phys. Lett. 80, 1550 (2002).
3. E. Valcheva, T. Paskova, and B. Monemar, “Extended defects in GaN films grown at high
growth rate”, J. of Physics: Condensed Matter 14, 13269 (2002).
4. T. Paskova, P. P. Paskov, V. Darakchieva, E. M. Goldys, U. Södervall, E. Valcheva, B.
Arnaudov, and B. Monemar, “Free-standing HVPE-GaN quasi-substrates: impurity and
strain distributions,” phys. stat. sol. (c) 0, 209 (2002).
5. E. Valcheva, T. Paskova, P. O. Å. Persson, and B. Monemar, “Nanopipes in thick GaN films
grown at high growth rate,” phys. stat. sol. (a) 194, 532 (2002).
6. S. Alexandrova, S. Kaschieva, E. Halova, E. Valcheva, A. Szekeres, “Sensitivity of
hydrogen plasma-treated SiO2/Si structures to high-energy electron irradiation”,Vacuum 69,
103 (2002).
2003
7. B. Arnaudov, T. Paskova, S. Evtimova, E. Valcheva, and B. Monemar, “Multilayer model
for Hall effect data analysis of semiconductor structures with step-changed conductivity,”
Phys. Rev. B 67, 45314 (2003).
8. V. Darakchieva, P. P. Paskov, T. Paskova, E. Valcheva, B. Monemar, and M. Heuken,
“Lattice parameters of GaN layers grown on a-plane sapphire: effect of in-plane strain
anisotropy,” Appl. Phys. Lett. 82, 703 (2003).
9. E. Valcheva, T. Paskova and B. Monemar, “Nanopipes and their relationship to the growth
mode in thick HVPE-GaN layers,” J. Cryst. Growth 255, 19 (2003).
10. T. Paskova, V. Darakchieva, E. Valcheva, P. P. Paskov, B. Monemar, and M. Heuken, “Inplane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by
different techniques”, J. Cryst. Growth 257, 1 (2003).
11. V. Darakchieva, P. P. Paskov, T. Paskova, E. Valcheva, B. Monemar, and M. Heuken; “Inplane strain anisotropy and lattice parameters of GaN films grown on a-plane sapphire by
metalorganic vapor phase epitaxy”. Proc. of the 10th European Workshop on MOCVD
(Lecce, Italy; 8-11 June 2003), p. 327 (2003).
12. E. Valcheva, T. Paskova, G. Radnozi, L. Hultman, B. Monemar, H. Amano, and I. Akasaki;
“Microstructure development in MOVPE grown AlN/GaN superlattices with different
periods.” Proc. of the 10th European Workshop on MOVPE; (Lecce, Italy; June 8-11,
2003), p. 339 (2003).
Page 3 - Curriculum vitae of
VALCHEVA, Evgenia Petrova
13. E. Valcheva, T. Paskova, G. Radnozi, L. Hultman, B. Monemar, H. Amano, and I. Akasaki;
“Growth-induced defects in AlN/GaN superlattices with different periods”. Physica B:
Condensed Matter, 340-342c, p. 1129 (2003).
14. E. Valcheva, T. Paskova, B. Monemar, A.M. Roskowski, and R.F. Davis; “Defect and
emission distributions in thick HVPE-GaN layers grown on Pendeo templates”. phys. stat.
sol. (c) 0, 2424 (2003).
15. T. Paskova, V. Darakchieva, E. Valcheva, P.P. Paskov, B. Monemar, and M.Heuken;
“Growth of GaN on a-plane sapphire: in-plane epitaxial relationships and lattice
parameters”, phys. stat. sol. (b) 240, 318 (2003).
2004
16. T. Paskova, E. Valcheva, V. Darakchieva, P.P. Paskov, B. Arnaudov, B. Monemar, J.
Birch, M. Heuken, R.F. Davis, and P. Gibart, “Growth, separation and properties of HVPE
grown GaN by using different nucleation schemes.” Invited talk; Proc. of the International
Workshop on Bulk Nitrides; (Tokyo, Japan; June 2-3, 2003); 4, 14 (2004).
17. T. Paskova, E. Valcheva, P.P. Paskov, B. Monemar, A.M. Rockowski, R.F. Davis, B.
Beaumont, and P. Gibart; “HVPE-GaN: comparison of emission properties and
microstructures of films grown on different laterally overgrown templates”, Diamond and
Related Materials, 13, 1125 (2004).
18. T. Paskova, V. Darakchieva, E. Valcheva, P.P. Paskov, I.G. Ivanov, B. Monemar, T.
Böttcher, C. Ruder, and D. Hommel; “HVPE-GaN thick films for quasi-substrate
applications: strain and wafer bending”, J. Electronic Materials, 33, 389 (2004).
19. V. Darakchieva, P.P. Paskov, M. Schubert, E. Valcheva, T. Paskova, H. Arwin, B.
Monemar, H. Amano, and I. Akasaki; “Strain evolution and phonons in AlN/GaN
superlattices”, Proc. Mater. Res. Soc. Symp. Proc 798, Y5.60.1 (2004).
20. B. Arnaudov, T. Paskova, P. P. Paskov, B. Magnusson, E. Valcheva, B. Monemar, H. Lu,
W. J. Schaff, H. Amano, and I. Akasaki, “Energy position of near bandedge emission
spectra of InN epitaxial layers with different doping levels,” Phys. Rev. B 69, 115216
(2004).
21. V. Darakchieva, P. P. Paskov, E. Valcheva, T. Paskova, B. Monemar, H. Lu,W. J. Schaff,
“Deformation potentials of the E1(TO) and E2 modes of InN,” Appl. Phys. Lett., 84, 3636
(2004).
22. A. Kasic, E. Valcheva, and B. Monemar, H. Lu,W. J. Schaff, “ InN dielectric function from
the mid-infrared to the ultra-violet range”, Phys. Rev. B 70, 115217 (2004).
23. B. Monemar, H. Haratizadeh, P. P. Paskov, J P Bergman, E Valcheva, B. Arnaudov, A.
Kasic, P.O.Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki;
“Radiative recombination processes in Al0.07Ga0.93N/GaN multiple quantum well
structures”, phys. stat. sol. (c), 1, 2500 (2004).
24. B. Monemar, P. P. Paskov, H. Haratizadeh, J. P. Bergman, E. Valcheva, V. Darakchieva, B.
Arnaudov, T. Paskova, P.O.Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, I.
Akasaki, “Optical investigation of AlGaN/GaN quantum wells and superlattices”, phys. stat.
sol. (a) 201, 2251 (2004).
25. B. Arnaudov, T. Paskova, P. P. Paskov, B. Magnusson, E. Valcheva, B. Monemar, H. Lu,
W. J. Schaff, H. Amano, and I. Akasaki, “Free-to-bound radiative recombination in highly
conducting InN epitaxial layers”, Superlattices and Microstructures, 36, (2004), 563
26. V. Darakchieva, P. P. Paskov, E. Valcheva, T. Paskova, B. Monemar, M. Shubert, C.
Bundesmann, H. Lu, W. J. Schaff, ”Infrared ellipsometry and Raman studies of hexagonal
InN films: correlation between strain and vibrational properties.” Superlattices and
Microstructures, 36, 573 (2004).
Page 4 - Curriculum vitae of
VALCHEVA, Evgenia Petrova
27. T. Paskova, P. P. Paskov, E. Valcheva, V. Darakchieva, J.Birch, A.Kasic, B.Arnaudov, S.
Tungasmita, B. Monemar, “Polar and nonpolar GaN growth by HVPE: Preferable substrates
for nitride-based emitting devices”, phys. stat. sol. (a) 201, 2265 (2004).
28. T. Paskova, P.P. Paskov, E.M. Goldys, E. Valcheva, V. Darakchieva, U. Sodervall, M.
Godlewski, M. Zielinski, S. Hautakangas, K. Saarinen,C.F. Carlstrom, Q. Wahab, B.
Monemar, “Characterization of mass-transport grown GaN by hydride vapour phase
epitaxy”, J. Crystal Growth, 273, 118 (2004).
2005
29. T. Paskova, V. Darakchieva, P. P. Paskov, A. Kasik, J. Birch, E. Valcheva, P. O. A.
Persson, B. Arnaudov, S. Tungasmita, B. Monemar, ”Nonpolar HVPE GaN: growth and inplane anisotropic properties”, IWN 2004, Pittsburg, phys. stat. sol. (c) 2, 2027-2031 (2005).
30. T. Paskova, V. Darakchieva, P.P. Paskov, J. Birch, E. Valcheva, P.O.A. Persson, B.
Arnaudov, S. Tungasmita, and B. Monemar, “Properties of nonpolar a-plane GaN thick
films grown by HVPE with AlN buffers.” IW on Bulk Nitride Semiconductors III;
Zakopane, Poland; Sept. 4-9, 2004; J. Crystal Growth, 281, 55 (2005).
31. V. Darakchieva, E. Valcheva, P. P. Paskov, M. Schubert, T. Paskova, B. Monemar, H.
Amano, and I. Akasaki, “Phonon mode behavior in strained wurtzite AlN/GaN
superlattices”, Phys. Rev. B 71, 115329 (2005).
32. B. Arnaudov, T. Paskova, P.P. Paskov, B. Magnusson, E. Valcheva, B. Monemar, H. Lu,
W. Schaff, H. Amano, and I. Akasaki, “On the nature of near bandedge luminescence of
InN epitaxial layers”, Arizona, 2004. AIP Conf. Proc. 772, 285 (2005).
33. E. Valcheva, S. Alexandrova, S. Dimitrov, D. Manova, ”AlN thin films grown by reactive
magnetron sputtering for microelectronics applications”, Proc. 14th Int. Scientific and
Applied Science Conf. ELECTRONICS ET’ 2005, 21 – 23 September, Sozopol, Bulgaria,
Book 5, p.21-24.
34. S. Alexandrova, E. Valcheva, R. Kobilarov, “Nitrogen containing ultra thin SiO2 films on
Si obtained by ion implantation”, Proc. 14th Int. Scientific and Applied Science Conf.
ELECTRONICS ET’ 2005, 21 – 23 September, Sozopol, Bulgaria, Book 5, p.38-43.
35. E. Valcheva, M. Abrashev, B. Monemar, H. Amano, I. Akasaki, “Phonon modes behavior
in short period GaN/AlN superlattices, ” Proc. Workshop "Nanostructured thin films:
technological base for new generations of microelectronics devices and superhard coatings,"
2005, Plovdiv, Bulgaria, p. 105-110.
2006
36. E. Valcheva, S. Alexandrova, S. Dimitrov, H. Lu, W. J. Schaff, “ Recombination processes
with and without momentum conservation in degenerate InN,” phys. stat. sol. (a) 203, 75,
(2006).
37. E. Valcheva, J.Birch, P.O.Å. Persson, S.Tungasmita, L. Hultman, “Epitaxial growth and
orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron
sputtering”, J. Appl. Phys. 100, 123514 (2006).
38. S. Kaschieva, E. Halova, E. Vlaikova, S. Alexandrova, E. Valcheva, S. Dmitriev,
“Investigation of p-Type MOS Structure Irradiated with 23 MeV Electrons”, Plasma
Processes and Polymers 3, 237 (2006).
39. S. Dimitrov, E. Valcheva, V. Donchev, “Investigation of the surface band structure of InN”,
Meetings in Physics at University of Sofia, vol. 6, ed. A. Proykova, Heron Press, Sofia,
2006, p. 1–3, ISBN-10 954-580-199-9 (ISBN-13 978-954-580-199-0)
2007
Page 5 - Curriculum vitae of
VALCHEVA, Evgenia Petrova
40. E. Valcheva, D. Manova, S. Mändl, S. Alexandrova, J. Lutz, and S. Dimitrov, “Ion beam
synthesis of AlN nanostructured thin films,” J. of Оptoelectr. and Аdv. Мat., 9, 166 – 169
(2007).
41. S. Dimitrov, E. Valcheva, V. Donchev, “Electron gas properties in multiple quantum well
GaN/AlxGa1-x N heterostructures with diffuse interfaces”, J. of Оptoelectr. and Аdv. Мat., 9,
194 (2007).
42. S. Tinchev, Y. Dyulgerska, P. Nikolova, S. Alexandrova, E. Valcheva, ”Electrical
properties of (a-C:H)/Si and (a-C:H)/Ti heterostructures”, J. of Оptoelectr. and Аdv. Мat., 9,
386 (2007).
43. S. Alexandrova, A. Szekeres, E. Valcheva, E. Vlaikova, “Electrically active defect centers
in MOS structures with nanosized SiO2 thermally grown on plasma hydrogenated silicon“,
J. of Оptoelectr. and Аdv. Мat., 9, 398 (2007).
44. E. Valcheva, S. Dimitrov, H. Haratizadeh, B. Monemar, H. Amano, I. Akasaki, “Influence
of well-width fluctuations on the electronic structure of GaN/AlGaN multiquantum wells
with graded interfaces”, Acta Physica Polonica A, 112, 395 (2007).
45. H. Haratizadeh, B. Monemar, P. P. Paskov, P. O. Holtz, E. Valcheva, P. Persson, M. Iwaya,
S. Kamiyama, H. Amano, and I. Akasaki, “Optical observation of discrete well width
fluctuations in wide band gap III-nitride quantum wells”, phys. stat. sol. (b) 244, 1727–
1734 (2007).
2008
46. S. Dimitrov, E. Valcheva, V. Donchev
“Electronic properties of GaN/AlxGa1-xN multiquantum well structures with graded
interfaces and piezoelectric polarization fields” Nanoscience and Nanotechnology 7, eds.
E.Balabanova, I. Dragieva, (Heron Press, Sofia 2008), pp. 115-118. ISBN: 978-954-580228-7
47. E. Valcheva, S. Dimitrov, D. Manova, S. Mändl, S. Alexandrova, “AlN Nanoclusters
Formation by Plasma Ion Immersion Implantation”, Surf. and Coat. Technol., 202, Issue
11, (2008), pp. 2319-2322.
48. V. Donchev, D. Todorova, E. Valcheva, Ts. Ivanov, D. Nesheva, “Computer simulation of
infra-red transmission spectra of SiO2 films containing si nanoparticles”, Nanoscience and
Nanotechnology 8, eds. E.Balabanova, I. Dragieva, Heron Press, (2008), pp. х-х. (8th
Workshop on Nanoscience and Nanotechnology, Sofia 22-24.11. 2007).
49. E. Valcheva, K. Kirilov, M. Abrashev, R. Božek, “Еvolution of structural and optical
properties of thin epitaxial InN grown by MBE”, Nanoscience and Nanotechnology 8, eds.
E.Balabanova, I. Dragieva, Heron Press, (2008), pp. х-х. (8th Workshop on Nanoscience
and Nanotechnology, Sofia 22-24.11. 2007).
50. T. Paskova, A.D. Hanser, E. Preble, K. Evans , R. Kroeger, F. Toumisto, R. Kersting,
R. Alcorn, S. Ashley, C. Pagel, E. Valcheva, P. Paskov, B. Monemar, ”Defect and
emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative
analysis”, International Symposium on Integrated Optoelectronic Devices Photonics West
2008 ( 2008: San Jose, USA ) s. 68940D1 - 68940D7, Proc. SPIE 6894: -, 2008.
Page 6 - Curriculum vitae of
VALCHEVA, Evgenia Petrova