OMAR QASAIMEH
WORK ADDRESS
Jordan University of Science and Technology,
Department of Electrical Engineering
P. O. Box 3030
Irbid 22110
Jordan
Tel: 962-2-7201-000 ext 22580
Fax 962-2-7095-018
E-mail: Qasaimeh@just.edu.jo
EDUCATION:
Ph.D. Electrical Engineering, 06/2000
The University of Michigan, Ann Arbor
Thesis title: "Monolithically Integrated Low-Power Phototransceivers and Photoreceivers for
Application in an Optoelectronic Eye"
M. S. E. in Electrical Engineering, 05/1994
Jordan University of Science and Tech., Irbid, Jordan.
B. S. E. in Electrical Engineering, 02/1992.
Jordan University of Science and Tech., Irbid, Jordan.
EXPERIENCE:

Professor (2013-now) Jordan University of Science and Technology, Irbid, Jordan,

Chairman of Electrical Engineering Department (9/2008-9/2009) Jordan University of
Science and Technology, Irbid, Jordan.

Associate Professor (2007-2013) Jordan University of Science and Technology, Irbid,
Jordan,

Assistant Professor (2002-2007) Jordan University of Science and Technology, Irbid,
Jordan,

Member of the following committee

ABET committee

Laboratory committee

Curriculum committee

Research conducted: see list of publications below.

Supervised several B. Sc. graduation design projects

Supervised graduate thesis work

Courses Taught for undergraduate levels:

EE 220 Electronics I,

EE316 Electric circuit laboratory,

EE320 Electronics II,

EE321 Electronics I for non-EE,



EE322 Electronics laboratory,

EE325 Electronics I for biomedical Eng.,

EE327 Electronics II for biomedical Eng,

EE420 Digital Electronics,

EE422 Digital electronics laboratory,

EE522 Optoelectronics,
Courses Taught for graduate levels:

EE722 Advance Electronic Circuits.

EE725 Advanced optoelectronic devices

EE743 High speed transistors

EE790 Seminar in Electrical Engineering

EE721 Quantum Electronics
Tunable laser designer
Agere Systems (now LSI Corporation), Breinigsville, PA 07/2000-2002:
Design and development of CW tunable DBR lasers.


Improve performance of SOA-based tunable DBR laser in C and L bands.

Improve yield (include channel/wavelength targeting) .

Reduce non-uniformity and process/growth variation.

Qualify KR, JD reactor for DBR laser production.

Develop device design and process that meet requirements.

Develop qualification plan for the laser package.

Develop test strategies (chip, OSA and package).

Design 1480nm tunable pump laser.

Involved in designing sampled grating SGDBR tunable laser.

Involved in development of Electroabsorption-based (EA-DBR) tunable laser.
Research Assistant 05/1996-06/2000
The University of Michigan, Ann Arbor:

Design, fabrication, and characterization of a high performance optoelectronic
devices and circuits realized with SiGe/Si technology.

Investigation of quantum dot devices for high-speed modulation and wavelength
switching applications.

Realization of high-gain monolithically integrated low power phototransceiver
using a vertical cavity surface emitting laser (or/and microcavity light emitting
diode) and heterojunction bipolar transistors (or/and modulated barrier
photodiode).

Teaching and Research Assistant 09/1994- 08/1995 Yarmouk University, Hijjawi college,
Jordan,.

Served as instructor for the following laboratories: electronic circuits,
integrated circuits, logic design, and biomedical electronics.

conduct research on high-speed devices such as MQW photodiodes,
avalanche photodiodes, and heterojunction phototransistors.

Teaching and Research Assistant, 09/1992- 05/1994
Jordan University of Science and Technology, Jordan,.

Served as instructor for the following laboratories: microwaves and
antennas,
integrated
circuits,
logic
design,
instrumentations
&
measurements, and control systems.

Conduct theoretical study on light amplifying optical switch (LAOS)
consisting of monolithically integrated laser diode (or LED) and
heterojunction bipolar phototransistors.
EXPERTISE:
Use of design and analysis software for semiconductor devices and circuits

Computer programming, Fortran, Pascal, Matlab, etc.

Semiconductor device analysis tool - Medici.

Semiconductor process analysis tool - Suprem.

Circuit analysis tools - Hspice, Libra.

Circuit layout tool - Mentographics, L-Edit.
Fabrication of semiconductor devices and circuits.

Vacuum and plasma systems - evaporator, RIE, PECVD.

Lithography systems - optical aligner, E-beam lithographer.

Image acquisition system - scanning electron microscope.
Microwave and optical characterization of semiconductor devices and circuits

S-parameter measurement system - network analyzer.

Optical characterization.

Characterization of lasers and modulators including high-speed measurements.
SCHOLARSHIPS AND HONORS

Hisham Hijjawi Award for applied science in Information Technology &
Communications 2011.

Abdel-Hameed Shoman Award for Young Arab Researchers: Engineering
Sciences
2005.

Scholarship, Jordan University of Science and Technology, 1995-1998.

Dean’s honor list: All the semesters of undergraduate study, 1987-1992.

Bachelor of Engineering (1992) and Master of Engineering (1994) with
Distinction; ranked First.
ACTIVITIES

IEEE Member

Reviewer of several articles for IEEE Journal of Quantum Electronics and IEEE
Transaction on Electron Devices.
ARCHIVAL JOURNAL PUBLICATIONS:
1.
O. Qasaimeh, “Effect of doping on the polarization characteristics of spin-injected quantum dot
VCSEL," J. optical and Quantum Electron, published online Jan 2014.
2.
O. Qasaimeh, “Broadband Gain-Clamped Linear Quantum Dash Optical Amplifiers," J. optical
and Quantum Electron, Vol.45 , No.12, pp. 1277-1286, 2013.
3.
O. Qasaimeh, “Wide wavelength conversion in P-type doped quantum dot semiconductor optical
amplifiers” Optic Communications, Vol. 305, pp. 1-7, 2013.
4.
O. Qasaimeh, “Efficiency of Four-Wave Mixing of Doped Closely Spaced Energy States
Quantum Dash Semiconductor Optical Amplifiers” Journal of Optical Engineering, Vol. 50(9), pp
094203, Sep. 2011.
5.
H. M. Al-Otum and O. Qasaimeh “A Novel Watermarking Technique Based on the Generalized
Squared Interpoint Distance for Image Copyright Protection Applications”, Journal of Electronic
Imaging, Vol 20, No. 3, pp 033014(1-13), 2011.
6.
O. Qasaimeh, and H. M. Al-Otum “Cross-Gain Modulation in Closely Spaced Energy States
Quantum Dash Semiconductor Optical Amplifiers” Optic Communications, Vol. 284, pp. 46354641, 2011.
7.
O. Qasaimeh, “Small-Signal Parameters of Quantum Dash Lasers with Multiple Coupled Energy
States” Journal of Optical Engineering, Vol. 49(11), pp 114202(1-7), Nov. 2010.
8.
O. Qasaimeh, “Differential Gain of Closely Spaced Energy States in Quantum Dashes” IEEE J.
Lightwave Technology, Vol. 28, No. 13, pp. 1906-1912, 2010.
9.
O. Qasaimeh, “Vertical Coupling in Multiple Stacks Quantum Dot Semiconductor Optical
Amplifiers” Journal of Physics D: Applied Science, Vol. 42, pp. 234001, 2009.
10. O. Qasaimeh and Hadeel Qasaimeh “Stability Analysis of Quantum Dash DBR Lasers” Journal
of Optical Engineering, Vol. 48(12) , pp 124202(1-7), Dec. 2009.
11. O. Qasaimeh, “Low Current N-type Quantum Dash Semiconductor Optical Amplifiers”, IEEE
Photonic Technology Letter, Vol. 21, No. 19, pp. 1390-1392, 2009.
12. O. Qasaimeh, “Ultra-Fast Gain Recovery and Compression Due to Auger-Assisted Relaxation in
Quantum Dot Semiconductor Optical Amplifiers” IEEE J. Lightwave Technology, Vol. 27, No. 13,
pp. 2530-2536, 2009.
13. O. Qasaimeh, “Effect of Doping on the Optical Characteristics of Quantum Dot Semiconductor
Optical Amplifiers," IEEE J. Lightwave Technology, Vol. 27, No. 12, pp. 1978-1984, 2009.
14. O. Qasaimeh, “Dynamics of optical pulse amplification and saturation in multiple state quantum
dot semiconductor optical amplifiers," J. optical and Quantum Electron, Vol. 41, No. 1, pp. 99111, 2009.
15. O. Qasaimeh, “Analytical Model for Cross-Gain Modulation and Crosstalk in Quantum Well
Semiconductor Optical Amplifiers," IEEE J. Lightwave Technology, Vol. 26, No. 4, pp. 449-456,
2008.
16. O. Qasaimeh, “Novel Closed-Form Model for Multiple-State Quantum Dot Semiconductor
Optical Amplifiers," IEEE J. Quantum Electron Vol. 44, No.7 pp. 652-657, 2008.
17. Jehad Ababneh and Omar Qasaimeh, “Simple Model for Quantum Dot Semiconductor Optical
Amplifiers Using Artificial Neural Networks,” IEEE Trans. Electron. Device. Vol. 53, No.7,
pp.1543-1551, July 2006.
18. O. Qasaimeh, “Characteristics of Wavelength Conversion of Short Optical Pulses in Quantum
Dot Semiconductor Optical Amplifiers," Optical and Quantum Electron, Vol. 37, No.7, pp-661673, 2005.
19. O. Qasaimeh, “Linewidth Enhancement Factor of Quantum Dot Lasers,". Optical and Quantum
Electronics, Vol. 37, No. 5, pp 495-507, 2005.
20. O. Qasaimeh, “Ultrafast Dynamic Properties of Quantum Dot Semiconductor Optical Amplifiers
Including Line Broadening and Carrier Heating," IEE proceedings: Optoelectronics, Vol. 151, No.
4. pp.205-210, 2004.
21. O. Qasaimeh, “Modulation Bandwidth of Inhomogeneously Broadened InAs/GaAs Quantum Dot
Lasers," Optics Communication, Vol. 236, No.4-6, pp. 387-394, 2004.
22. O. Qasaimeh, “Theory of Four-Wave Mixing Wavelength Conversion in Quantum Dot
Semiconductor Optical Amplifiers," IEEE Photon. Tech. Lett., Vol. 16, No. 4, pp. 993-995, 2004.
23. O. Qasaimeh and H. Khanfar “High-Speed Characteristics of Tunneling Injection and ExcitedState Emitting InAs/GaAs Quantum Dot Lasers," IEE proceedings: Optoelectronics. Vol. 151,
No. 3, pp. 143-149, 2004.
24. O. Qasaimeh, “Characteristics of Cross-gain Wavelength Conversion in Quantum Dot
Semiconductor Optical Amplifiers," IEEE Photon. Tech. Lett. Vol. 16, No. 2, pp. 542-544, 2004.
25. O. Qasaimeh, “Effect of Inhomogeneous Line Broadening on Gain and Differential Gain of
Quantum Dot Lasers," IEEE Trans. Electron. Device. Vol. 50, No. 7, pp. 1575-1581, 2003.
26. O. Qasaimeh, “An Analytical Model for Quantum Dot Semiconductor Optical Amplifiers,"
Optics Communication, Vol. 222, No. 1-6, pp. 277-287, 2003.
1.
O. Qasaimeh, “Optical Gain and Saturation Characteristics of Quantum Dot Semiconductor
Optical Amplifiers," IEEE J. Quantum Electron, Vol.39, No. 6, pp. 793-798, 2003.
2.
P. Bhattacharya, W-D. Zhou, O. Qasaimeh and S. Pradhan,’’ Evolutionary design process
ponders optoelectronic eye,’’ Laser Focus World, Vol. 38, no. 5, May 2002, p.125-130.
3.
O. Qasaimeh, W. Zhou, P. Bhattacharya, D. Huffaker and D. Deppe, " Monolithically integrated
low-power phototransceiver for optoelectronic parallel sensing and processing applications," IEEE
J. Lightwave Technology, Vol.19, No. 4, pp. 546-552, 2001.
4.
W. Zhou, P. Bhattacharya and O. Qasaimeh, " InP-Based cylindrical microcavity light-emitting
diodes," IEEE J. Quantum Electron., Vol. 37, No. 1, pp. 48-54, 2001.
5.
O. Qasaimeh, W. Zhou, P. Bhattacharya, D. Huffaker and D. Deppe, " Monolithically integrated
low-power phototransceiver incorporating InGaAs quantum dot microcavity LED and modulated
barrier photodiode," Electron. Lett., Vol. 36, No. 23, pp. 1255-1257, 2000.
6.
O. Qasaimeh, W. Zhou, P. Bhattacharya, D. Huffaker and D. Deppe, " Monolithically integrated
low-power phototransceiver incorporating microcavity LEDs and multiquantum
phototransistors," IEEE Photon. Tech. Lett., Vol. 12 No. 12, pp. 1683-1685, 2000.
7.
well
O. Qasaimeh, Z. Ma, P. Bhattacharya and E. Croke, " Monolithically integrated multichannel
SiGe/Si p-i-n–HBT photoreceiver arrays," IEEE J. Lightwave Technology, Vol. 18, No. 11, pp.
1548-1553, 2000.
8.
S. Ghosh, A. Lenihan, M. Dutt, O. Qasaimeh, D. Steel and P. Bhattacharya, “Non-linear optical
and electro-optic properties of InAs/GaAs self-organized quantum dots,” J. of Vacuum Science
and Technology B, 19(4), p. 1455, Jul/Aug 2001.
9.
S. Krishna, O. Qasaimeh, P. Bhattacharya, P. McCann and K. Namjou, "Room-temperature farinfrared emission from a self-organized InGaAs/GaAs quantum-dot laser," Appl. Phys. Lett., Vol.
76, No. 23, pp. 3355-3357, 2000.
10. W. D. Zhou, J. Sabarinathan, B. Kochman, E. Berg, O. Qasaimeh, S. Pang and P. Bhattacharya,
"Electrically injected single-defect photonic bandgap surface-emitting laser at room temperature,"
Electron. Lett. Vol. 36, no 18, p. 1541, 2000.
11. J. Xu, O. Qasaimeh, P. Bhattacharya, D. Huffaker and D. Deppe, “GaAs/Al 0.3Ga0.7As multiple
quantum well dual focus Fresnel lens modulator”, Electron. Lett. Vol. 36, no 1, p. 76, 2000.
12. P. Bhattacharya, D. Klotzkin, O. Qasaimeh, W. Zhou, S. Krishna, and D. Zhu, (INVITED)
“High-speed modulation and switching characteristics of In(Ga)As/Al(Ga)As self-organized
quantum dot lasers”, IEEE J. Selected Topic in Quantum Electronics, Vol. 36, No. 3, pp. 426-458,
2000.
13. P. Bhattacharya, S. Krishna, D. Zhu, J. Phillips, D. Klotzkin, O. Qasaimeh, W.D. Zhou, J.Singh,
P.J. McCann and K. Namjou, “Optoelectronic device applications of self-organized
In(Ga,Al)As/Ga(Al)As quantum dots”(INVITED), Proceeding of Materials Research Society
(Spring Meeting), 2000.
14. S. Krishna, D. Zhu, J. Xu, K. Linder, O. Qasaimeh, P. Bhattacharya, and D. Huffaker, “Structural
and luminescence characteristics of cycled submonolayer InAs/GaAs Quantum dots with room
temperature emission at 1.3m”, J. of Appl. Phys., Vol 86, no. 11, pp6135-8, 1999.
15. H. Gebretsadik, O. Qasaimeh, H. Jiang, and P. Bhattacharya, “Design and realization of a 1.55m
patterned vertical cavity surface emitting laser with lattice-mismatched mirror layers” IEEE J.
Lightwave Technology, Vol. 17, No. 12, pp. 1-10, 1999.
16. P. Goetz, H. Eisel, K. Yang, S. Kaochih, O. Qasaimeh, and P. Bhattacharya, “High-based MMIC
components for an optical phase-locked loop,”IEEE Transactions on Microwave Theory and
Techniques. Vol. 47, no. 7, pp. 1241-50, 1999.
17. W.-D. Zhou, O. Qasaimeh, J. Phillips, S. Krishna, and Bhattacharya-P, “Bias-controlled
wavelength switching in coupled-cavity InGaAs/GaAs self-organized quantum dot lasers”, Appl.
Phys. Letters, Vol. 74, No. 6, pp. 783-785, 1999.
18. O. Qasaimeh, W.-D. Zhou, J. Phillips, S. Krishna, and Bhattacharya-P, “Bistability and selfpulsation in quantum dot lasers with intracavity quantum dot saturable absorbers”, Appl. Phys.
Lett., Vol. 74, No. 12, pp. 1654-1656, 1999.
19. K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, and P. Bhattacharya, “Selforganized In0.4Ga0.6As quantum-dot lasers grown on Si substrates,” Appl. Phys. Lett., Vol. 74, No.
10, pp. 1355-1357, 1999.
20. K. K. Linder, J. Phillips, O. Qasaimeh, P. Bhattacharya and J. Jiang, “In0.4Ga0.6As Self-organized
quantum-dot light emitters grown on Silicon substrates,” Journal of Crystal Growth., Vol. 201201, pp. 1186-1189, May 1999.
21. K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, and P. Bhattacharya, “Growth and
electroluminescent properties of self-organized In0.4Ga0.6As/GaAs quantum dots grown on
silicon,”J. Vac. Sci. Technol. B, 17(3), pp. 1116-1119, 1999.
22. H. Gebretsadik, P. Bhattacharya, K. Kamath, O. Qasaimeh, D. Klotzkin, C. Caneau, and R. Bhat,
“InP-based 1.5m vertical cavity surface emitting laser with epitaxially grown defect-free GaAsbased distributed Bragg reflectors “, Electronics-Letters, Vol. 34, No. 13, pp. 1316-1318, 1998.
23. O. Qasaimeh, K. Kamath, P. Bhattacharya, and J. Phillips, “Linear and quadratic electro-optic
coefficients of self-organized InGaAs/GaAs quantum dots,”Appl. Phys. Lett., Vol. 72, No. 11,
pp.1275-1277, 1998.
24. O. Qasaimeh, P. Bhattacharya, and E. Croke, “SiGe/Si Quantum Well Electroabsorption
Modulators,” IEEE Photonics Technology Letters, Vol. 10, No.6, pp. 807-809, 1998.
25. O. Qasaimeh, J. Singh, and P. Bhattacharya, “Electroabsorption and Electrooptic Effect in SiGeSi Quantum Wells: Realization of Low-Voltage Optical Modulators, IEEE J. Quantum
Electronics, Vol. 33, No. 9, pp. 1532-1536, 1997.
26. J.-S. Rieh, D. Klotzkin, O. Qasaimeh, L.-H. Lu, L. Katehi, P. Bhattacharya, and E. Croke,
“Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers,” IEEE Photonics
Technology Letters, Vol. 10, No.3, pp. 415-417, 1998.
27. J.-S. Rieh, O. Qasaimeh, L.-H. Lu, K. Yang, L. Katehi, P. Bhattacharya, and E. Croke, “Singleand dual-feedback transimpedance amplifiers implemented by SiGe HBT technology,” IEEE
Microwave and Guided Wave Letters, Vol. 8, No.2, pp. 63-65, 1998.
28. Y. Zebda, and O. Qasaimeh, “Frequency Response and Gain of Multiquantum Well Avalanche
Photodiode,” J. of Optical Communications, Vol. 18, No. 3, pp. 99-103, 1997.
29. Y. Zebda, and O. Qasaimeh, “Analysis of Transient Response of Light Amplifying Optical
Switch (LAOS),” Optics Communications, Vol. 135, Issue 1-3, pp.128-132, 1997
30. O. Qasaimeh, and Y. Zebda, “Effect of Bandgap Discontinuity on the Cut-off Frequency, Base
Transit Time and Junction Capacitance of Npn AlGaAs/GaAs Heterojunction Bipolar
Transistors,” International Journal of Electronics, Vol. 84, no. 1, pp. 25-35, 1998.
31. Y. Zebda, and O. Qasaimeh, “Modified Diffusivity-Mobility Relation,” International Journal of
Electronics, Vol. 81, No. 3, pp. 291-296, 1996.
32. Y. Zebda, and O. Qasaimeh, “Effect of Carrier Transition Mechanisms on Frequency Response of
Multiquantum Well PIN Photodiode,” Optics Communications; Vol. 123, No. 1-3, pp 71-75;
1996.
33. Y. Zebda, and O. Qasaimeh, “A Modified Model of Light Amplifying Optical Switch (LAOS),”
IEEE J. of Quantum Electronics Vol. 31, No. 7, pp. 1302-1307, 1995.
34. Y. Zebda, and O. Qasaimeh, “Effect of Impact Ionization Coefficient Ratio on Gain and
Frequency Response of Avalanche Photodiode,” Optics Communications, Vol. 109, pp. 422-427,
1994.
35. Y. Zebda, and O. Qasaimeh, “Frequency Response and Quantum Efficiency of PIN Photodiode,”
Journal of Optical Communications, Vol. 15, No. 5, pp. 185-189, 1994.
36. Y. Zebda, and O. Qasaimeh, “Current and Current Gain Analysis of Passivated Heterojunction
Bipolar Transistors (HBT),” IEEE Transaction on Electron Devices, Vol. 41, No. 12, pp. 22332240, 1994.
37. Y. Zebda, and O. Qasaimeh, “A New Physical Model of Light Amplifying Optical Switch, IEEE
Transaction on Electron Devices, Vol. 41, No. 12, pp. 2248-2255, 1994.
38. Y. Zebda, and O. Qasaimeh, “Frequency and Time Response of PIN Photodiode, Journal of
Optics, Vol. 22, No. 3, pp.85-91, 1993.
CONFERENCE PRESENTATIONS:
1.
O. Qasaimeh, “Saturated Gain of Doped Multilayer Quantum Dot Semiconductor Optical
Amplifiers” International conference on electrical engineering and Technology, Venice, Italy
April 2011, WASET 76, pp. 456-461.
2.
P. Bhattacharya, S. Pradhan, W. Zhou and O. Qasaimeh,’ Low Power Phototransceivers
And Phototransceiver Arrays for High Density Opical Interconnect and Imaging
Applications,’’ The Electrochemical Society First International Symposium On
Integrated Optoelectronics, May 12-17, 2002, Philadelphia, PA.
3.
D. A. Ackerman, J. E. Johnson, L. J. P. Ketelsen, J.M. Geary, W.A. Asous, F.S. Walters,
J. M. Freund, M. S. Hybertsen, K.G. Glogovsky, C. W. Lentz, C.L. Reynolds, R. B.
Bylsma, E.J. Dean, L. E. Eng, O. Qasaimeh, R. Gupta, F. Ganikhanova, V. Veliadis, S.
Roycraft, T. Pinnington and G. Rao (INVITED), “A Practical Approach to Wavelength
Selectable DWDM Sources,” presented in IEEE/LEOS’01 14th annual meeting, Nov. 1215, 2001, San Diego, CA.
4.
O. Qasaimeh et al. (INVITED), “High-Power Tunable DBR Laser for Digital
Communication Systems,” presented in ITCom, August 20-24, 2001, Denver, CO.
5.
P. Bhattacharya, O. Qasaimeh and J-S. Rieh,
(INVITED) "SiGe/Si-Based
Optoelectronic Devices for High-speed Communication Applications" to be presented in
2001 IEEE Topical Meeting on Silicon Monolithic Circuits in RF Systems, Sept 12-14,
2001, Ann Arbor, MI.
6.
P. Bhattacharya, S. Krishna, D. Zhu, J. Phillips, D. Klotzkin, O. Qasaimeh, W. D. Zhou,
J. Singh, P. J. McCann and K. Namjou (INVITED), “ Optoelectronic device applications
of self-organized In(Ga,Al)As/Ga(Al)As quantum dots”, Proceeding of Materials
Research Society 2000 (Spring Meeting).
7.
O. Qasaimeh, W.D. Zhou, P. Bhattacharya, D. Huffaker and D. Deppe, “Ultra-low
Power Monolithically Integrated InGaAs/GaAs Phototransceiver Incorporaing a
Modulated Barrier Photodiode and a Quantum Dot Microcavity LED ,” IEEE/LEOS’00
13th annual meeting, Nov. 13-16, 2000, Rio Grande, Puerto Rico.
8.
J. Sabarinathan, W.D. Zhou, B. Kochman, E. Berg, O. Qasaimeh, T. Brock, S. Pang and
P. Bhattacharya, “Room Temperature Operation of an Electrically Injected Single-Defect
Photonic Bandgap Microcavity Surface-Emitting Laser,” IEEE/LEOS’00 13th annual
meeting, Nov. 13-16, 2000, Rio Grande, Puerto Rico.
9.
S. Krishna, O. Qasaimeh, P. Bhattacharya, P. McCann and K. Namjou, "Spontaneous far
infrared emission from self organized In0.4Ga0.6As/GaAs quantum dots," presented at the
42th Electronic Materials conference, Denver, CO, 2000.
10. W.D. Zhou, J. Sabarinathan, B. Kochman, E. Berg, O. Qasaimeh, T. Brock, S. Pang and
P. Bhattacharya, “Cylindrical Microcavity Light Emitters Realized with Double OxideConfinement or Single-Defect Photonic Bandgap Crystals”, IEEE 58th Device Research
Conference (DRC), June 19-21, 2000, Denver, CO.
11. O. Qasaimeh, W.D. Zhou, P. Bhattacharya, D. Huffaker and D. Deppe, “Monolithically
Integrated
Low-Power
Phototransceiver
Incorporating
Microcavity
LEDs
and
Multiquantum Well Phototransistors”, IEEE 58th Device Research Conference (DRC),
June 19-21, 2000, Denver, CO.
12. W.D. Zhou, O. Qasaimeh, and P. Bhattacharya, “InP-based 1.6m oxide-confined
microcavity light emitting diodes”, post deadline paper, Conference on Physics and
Simulation of Optoelectronic Devices VIII, Photonics West’00, Jan. 23-28, 2000, San
Jose, CA.
13. P. Bhattacharya, S. Krishna, D. Zhu, J. Phillips, D. Klotzkin, O. Qasaimeh, W. D. Zhou,
J. Singh, P. J. McCann and K. Namjou, "Optoelectronic device applications of selforganized In(Ga,Al)As/Ga(Al)As quantum dots", Proceeding of Materials Research
Society 2000 (Spring Meeting).
14. S. Ghosh, A. S. Lenihan, M. V. G. Dutt, O. Qasaimeh, D. G. Steel and P. Bhattacharya,
“Non-linear optical and electro-optic properties of InAs/GaAs self-organized quantum
dots,” 19th North American Conference on Molecular Beam Epitaxy, October, 2000,
Arizona.
15. S. Krishna, D. Zhu, W.D. Zhou, O. Qasaimeh, P. Bhattacharya, P.J. McCann, and K.
Namjou,
“Self
organized
InGaAs/GaAs
quantum
dot
intersubband
(~12m)
electroluminescent devices”, XIth International Conference on Molecular Beam Epitaxy,
Spetember, 2000, Beijing, China.
16. O. Qasaimeh, H. Gebretsadik, and P. Bhattacharya, “Patterned 1.54m vertical cavity
laser with mismatched defect-free mirrors”, presented at International Electron Device
Meeting (IEDM), Washington DC, December 1999
17. P. Bhattacharya, H. Gebretsadik, O. Qasaimeh, (INVITED)” 1.55m Patterned VCSELs
with Mismatched mirrors,” Lasers and Electro-optic Society (LEOS) Summer Toptical
Meeting, San Diego, July, 1999.
18. P. Bhattacharya, J. Phillips, S. Krishna, O. Qasaimeh, and W.D. Zhou, “Carrier
dynamics and ultrafast photonic device application of self-organized quantum dots”
(INVITED), Femtosecond Science and Technology Conference, 1999, Chiba, Japan.
19. J. Phillips, D. Klotzkin, O. Qasaimeh, W. Zhou, and P. Bhattacharya, (INVITED)”Highspeed modulation of quantum-dot lasers,” Lasers and Electro-optic Society (LEOS)
Summer Toptical Meeting, San Diego, CA, July, 1999.
20. P. Bhattacharya, H. Gebretsadik, O. Qasaimeh, C. Caneau and R. Bhat, (INVITED)
“1.55m VCSELs with directly grown AlGaAs/GaAs and AlxOy/GaAs DBR mirrors,”
SPIE's International Symposium on Integrated Optoelectronic Devices, Photonics West,
San Jose, CA, January 1999.
21. P. Bhattacharya, H. Gebretsadik, O. Qasaimeh, C. Caneau and R. Bhat,”Patterned
1.55m VCSELs and VCSEL/modulators with directly grown GaAs-based DBRs”,
Workshop on Frontiers in Optoelectronics (WOFOP), Seoul, Korea, November 1998.
22. K. Linder, J. Phillips,S. Krishna, O. Qasaimeh, and P. Bhattacharya, (INVITED)
“Growth and Properties of Self-Organized InGaAs/GaAs Quantum Dot Light Emitting
Diodes on Silicon substrate,” IEEE Laser and Electro-optics Society Annual Meeting,
Orlando, FL, December 1998.
23. K. K. Linder, J. Phillips, O. Qasaimeh, S. Krishna, and P. Bhattacharya, “Growth and
Electroluminescenct Properties of Self-Organized InGaAs/GaAs Quantum Dots Grown
on Silicon,” Proceedings for 1998 North American Conf. on Molecular Beam Epitaxy,
State College, PA, October 1998.
24. K. Linder, J. Phillips, O. Qasaimeh, and P. Bhattacharya,”In(Ga)As/GaAs self-organized
quantum dot light emitters grown on Silicon substrate,” International Conference on
Molecular Beam Epitaxy, Cannes, France, September 1998.
25. J.-S. Rieh, O. Qasaimeh, D. Klotzkin, L-H. Lu, K. Yang, L. Katehi, P. Bhattacharya, and
E. Croke,”Monolithically integrated SiGe/Si PIN-HBT front-end transimpedance
photoreceivers,” Proceedings IEEE/Cornell Conference on Advanced Concepts in High
Speed Semiconductor Devices and Circuits, Ithaca, NY, August 1997.
26. Y. Zebda and O. Qasaimeh, “Frequency Response of Multiquantum Well (MQW) PIN
photodiode,” presented at the First International Conference on Electronic, Circuits, and
System, Cairo, Egypt, December 1994.
27. Y. Zebda and O. Qasaimeh, “Frequency and Time Response of PIN Photodiode,
presented at the First National Jordanian Conference on Electrical Eng., Mu'tah
University, Karak, Jordan, April 1993.
REFERENCES
Prof. Pallab Bhattacharya
James R. Mellor Professor of Engineering
Electrical Engineering and Computer Science
The University of Michigan
1301 Beal Ave.
Ann Arbor, MI 48109-2112
pkb@eecs.umich.edu
Tel: (734) 647-1759
Prof. Diana Huffaker
Center for High Technology Materials
University of New Mexico
Albuquerque, NM 87131-0001
huffaker@chtm.unm.edu.
Tel: (505) 272-7845
Prof. Mansour I. Abbadi
Department of Electrical Engineering
Jordan University of Science and Technology
P. O. Box 3030
Irbid 22110, Jordan
E-mail: mabbadi@just.edu.jo
Tel: 962-2-7201-000 Ext.: (22550)
Prof Omar Asfar
Department of Electrical Engineering
Jordan University of Science and Technology
P. O. Box 3030
Irbid 22110, Jordan
E-mail: asfar@just.edu.jo
Tel: 962-2-7201-000 Ext.: (22558)