INDIVIDUAL DOPANTS SIGNATURE IN I-V CHARACTERISTICS OF NANOSCALE SOI PN JUNCTIONS S. Purwiyanti1,2, R. Nowak1,3, D. Moraru1, T. Mizuno1, R. Jablonski3, D. Hartanto2, and M. Tabe1 1Research Institute of Electronics, Shizuoka University, Japan of Electrical Engineering, Universitas Indonesia, Indonesia 3Institute of Metrology and Biomedical Engineering, Warsaw Univ. of Technology, Warsaw 2Department So far, studies about pn junctions characteristics in nanometer scale have been reported in relation with photonics [1,2] and tunneling [3,4] applications. The behavior of nanoscale pn junctions has also been reported [5,6], but not from the point of view of individual dopants. In nanometer scale, dopants do not work just as carrier providers. It has been reported that discrete dopants play, in fact, a key role in device transport properties. Therefore, a study of the impact of individual dopants on the behavior of pn junctions provides useful information about their functionality. In this work, focusing on the effects of individual dopants, we study the nanoscale ultra-thin SOI pn junctions in the dark condition. The device structure is shown in Fig. 1. Random telegraph signal (RTS) has been observed at low temperatures [Fig. 2], indicating the identification of a single charge trap. Trapping and detrapping events have also been observed by Kelvin probe force microscope (KFM) [7]. We ascribe these phenomena to the influence of individual dopants on the depletion layer’s potential and, implicitly, on the electrical characteristics. Fig. 1. Device structure and bias configuration. Fig. 2. I-V characteristics under forward bias at T = 30 K. Inset: I-time characteristics for different applied biases. Two-level RTS can be seen in a particular applied bias. References [1] O. Hayden, R. Agarwal, C. M. Lieber, Nature 5 (2006), 352. [2] B. M. Kayes and H. A. Atwater, J. Appl. Phys. 97 (2005), 114302. [3] H. Schmid, C. Bessire, M. T. Bjork, A. Schenk, and H. Riel, Nano Letters 12 (2012), 699. [4] C. Aydin and A. Zaslavsky, Appl. Phys. Lett. 84 (2004), 1780. [5] S. Petrosyan, A. Yesayan, D. Reuter, and A. D. Wieck, Appl. Phys. Lett. 84 (2004), 3313. [6] D. Reuter, C. Werner, A. D. Wieck, and S. Petrosyan, Appl. Phys. Lett. 86 (2005), 162110. [7] R. Nowak, D. Moraru, T. Mizuno, R. Jablonski, and M. Tabe, Appl. Phys. Lett. 102 (2013), 083109.