Jesús A. del Alamo
Donner Professor, MacVicar Faculty Fellow
Department of Electrical Engineering & Computer Science
P O STD OC TOR A L A SSOC IA T E S
Alon Vardy, MIT-Technion Fellow
GR ADUA T E STU D ENT S
Alex Guo, EECS, NDSEG Fellowship
Luke Guo, EECS, NSF Fellow
Donghyun Jin, EECS, Samsung Fellow
Jianqiang Lin, EECS
Wenjie Lu, EECS
Shireen Warnock, EECS
Yufei Wu, EECS
Xin Zhao, DMSE
U ND ER GRA DUA T E STU DE N T S
Rose Abramson, EECS
V I SIT OR S
Jose M. Lopez Villegas, U. Barcelona
SU PP OR T STA F F
Elizabeth Kubicki, Admin. Asst. II
SE L E CT E D PU B LI CA TI ON S
J. A. del Alamo, “Recent progress in understanding the
DC and RF reliability of GaN high-electron mobility
transistors,” Invited talk at Materials Research Society
Spring Meeting, April 9-13, 2012.
J. Lin, T.-W. Kim, D. A. Antoniadis, J. A. del Alamo, “A
Self-Aligned InGaAs Quantum-Well MOSFET Fabricated
through a Lift-off Free Front-end Process,” Applied
Physics Express, vol. 5, p. 064002, May 16, 2012.
D. Jin, J. A. del Alamo, “Mechanisms responsible for
dynamic ON-resistance in GaN high-voltage HEMTs,”
24th IEEE International Symposium on Power
Semiconductor Devices and ICs, June 3-7, 2012, pp. 333346.
T.-W. Kim, R. J. W. Hill, C. D. Young, D. Veksler, J. Oh, C.
Y. Kang, D.-H. Kim, J. A. del Alamo, C. Hobbs, P. Kirsch, R.
Jammy, “InAs Quantum-Well MOSFET (Lg=100 nm)
with Record High gm, fT and fmax,” 2012 Symposium on
VLSI Technology, June 12-15, 2012, pp. 179-180.
J. A. del Alamo, D.-H. Kim, “InAs High-Electron Mobility
Transistors on the Path to THz Operation,” Invited
paper at International Conference on Solid State Devices
and Materials, Sept. 25-27, 2012.
J. A. del Alamo, “Nanometer-Scale III-V CMOS,” Short
Course on the Future of Semiconductor Devices and
Integrated Circuits at 34th IEEE Compound
Semiconductor IC Symposium, Oct. 14, 2012.
C.-H. Lin, T. A. Merz, D. R. Doutt, J. Joh, J. A. del Alamo, U.
K. Mishra, L. J. Brillson, ”Strain and temperature
dependence of defect formation at AlGaN/GaN high
electron mobility transistors on a nanometer scale,”
IEEE Transactions on Electron Devices, vol. 59, No. 10,
pp. 2667-2674, Oct.2012.
J. Lin, D. A. Antoniadis, J. A. del Alamo, “Sub-30 nm In As
Quantum-Well MOSFETs with Self-Aligned Metal
Contacts and Sub-1 nm EOT HfO2 Insulator,” IEEE
International Electron Devices Meeting, Dec. 10-12,
2012, pp. 757-760.
T.-W. Kim , R. J. W. Hill, D. Kim, D.-H. Koh, R. Lee, M. H
Wong, T. Cunningham, J. A. del Alamo, S. K. Banerjee, S.
Oktyabrsky, A. Greene, Y. Ohsawa, Y. Trickett, G.
Nakamura, Q. Li, K. M. Lau, C. Hobbs, P. D. Kirsch, R.
Jammy, “ETW-QW InAs MOSFETs with Scaled Body for
Improved Electrostatics,” IEEE International Electron
Devices Meeting, CA, Dec.10-12, 2012, pp. 765-768.
D. Jin, J. A. del Alamo, ”Impact of high-power stress on
dynamic ON resistance of high-voltage GaN HEMTs,”
Microelectronics Reliability, vol. 52, pp. 2875-2879
(2012).
D.-H. Kim, J. A. del Alamo, D. A. Antoniadis, J. Li, J.-M.
Kuo, P. Pinsukanjana, Y.-C. Kao, P. Chen, A. Papavasiliou,
C. King, E. Regan, M. ±Urteaga, B. Brar, T.-W. Kim,
”Lg=60 nm recessed In0.7Ga0.3As metal-oxidesemiconductor field-effect transistors with Al2O3
insulator,” Applied Physics Letters, vol. 101, p. 223507,
2012.
D.-H. Kim, T.-W. Kim, R. J. W. Hill, C. D. Young, C. Y. Kang,
C. Hobbs, P. Kirsch, J. A. del Alamo, R. Jammy, ”HighSpeed E-Mode InAs QW MOSFET with Al2O3 Insulator
for Future RF Applications,” IEEE Electron Device
Letters, vol. 34, No. 2, pp. 196-198, Feb. 2013.
A. Guo, J. A. del Alamo, “Mo/n+-InGaAs Nanocontacts for
Future III-V MOSFETs,” to be presented at 25th
International Conference on Indium Phosphide and
Related Materials, May 19-23, 2013.
FACULTY PROFILE
J. A. del Alamo
Compound semiconductor transistor technologies for RF, microwave and millimeter wave applications. Nanometerscale III-V compound semiconductor transistors for future digital applications. Reliability of compound semiconductor
transistors. Technology and pedagogy of online laboratories for engineering education.
39-567a
253-4764
alamo@mit.edu
J.A. del Alamo, theses awarded (July 2013-June 2014)
Degree
S.B.
S.M. and M.Eng.
Ph.D.
Student Name
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Department
EECS
EECS
DMSE
EECS
EECS
EECS
MechE
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Thesis title
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Thesis date
June 2014 (tentative)
June 2014 (tentative)
November 2013
August 2013
September 2013
September 2013
May 2014 (tentative)