Suppression of metastable-phase inclusion

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Suppression of metastable-phase inclusion in N-polar (0001) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

Kanako Shojiki, Jung-Hun Choi, Takuya Iwabuchi, Noritaka Usami,Tomoyuki Tanikawa, Shigeyuki

Kuboya, Takashi Hanada, Ryuji Katayama, and Takashi Matsuoka

(a) (b)

[0001] [111]

Figure. S1.

The Kikuchi diffraction patterns obtained at the measurement points of (a)

WZ-phase (six-fold symmetric around [000 1] zone axis) and (b) ZB-phase (three-fold symmetric around [ 1 1 1] zone axis). The indices indicate surface-normal zone axis of each phase. Kikuchi bands diffracted by surface-normal planes cross the indicated surface-normal zone axis. These figures show the apparent difference in the Kikuchi diffraction patterns between WZ- and ZB-phase domains. Also the results of the structural analysis, influenced by the widths of the Kikuchi bands which intersect at the surface-normal zone axis, are not affected by the indium contents, because the in-plane lattice constants of GaN and coherently grown InGaN are the same. Even in case of other Kikuchi bands with different orientation, the shift of the distance from the zone axis is less than about 3 % for indium content of 20%. Moreover, in the EBSD method, the crystal structure is estimated from angular configurations between the diffraction bands instead of their band widths. Thus the Kikuchi diffraction patterns reflect the

averaged information on the crystal structure over the near surface layer of the MQWs in this study. The above discussion can prove the validity of EBSD measurements to determine the crystallographic phase purity and its spatial distribution in the MQWs.

(a)

V/III ratio 1320

(b) (c)

V/III ratio 6600

(d)

1 m m 1 m m 1 m m 1 m m

V/III ratio 13200

(e) (f)

1 m m 1 m m

WZ

[112]

[111]

[1100]

[0001]

ZB

Not identified

[112]

[111]

Figure. S2.

The plan-view secondly electron images and phase maps of – c -plane

MQWs with the V/III ratios of 1320 (a,b), 6600 (c,d), and13200 (e,f) during the InGaN wells growth with T g

of 770°C.

(a)

T g

770 o

C

(b) (c)

T g

810 o

C

(d) (e)

T g

850 o

C

(f)

1 m m

(g)

1

(h) m m 1 m m

(i)

1

(j) m m 1 m m

(k)

1

(l) m m

1 m m 1 m m 1 m m 1 m m 1 m m 1 m m

Not identified

WZ

[1100]

[0001]

[112]

[111]

ZB

[112]

[111]

Figure. S3.

The plan-view secondly electron images and phase maps of – c -plane

MQWs with the V/III ratios of 13200 and 1320 during the InGaN wells at 770°C (a,b) and (g,h), 810°C (c,d) and (i,j), and 810°C (e,f) and (k,l).

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