Supplementary material for: Negative space charge effects in photonenhanced thermionic emission (PETE) solar converters Gideon Segev1, Dror Weisman1, Yossi Rosenwaks1 and Abraham Kribus2 1 2 1 1.1 School of Electrical Engineering, Faculty of Engineering, Tel-Aviv University, Tel Aviv 69978, Israel School of Mechanical Engineering, Faculty of Engineering, Tel-Aviv University, Tel Aviv 69978, Israel Analysis PETE cathode model Under steady state conditions the difference between the cathode total optical generation and recombination is the net current: S1 L G R J em J rev q (S1) G is the optical generation, R’ is the total non-equilibrium recombination per unit volume, Jem and Jrev are the cathode and anode emission currents respectively, L is the cathode thickness and q is the fundamental charge. This derivation assumes that reverse emission electrons, and all electrons that are reflected off energy barriers in the inter electrodes space, contribute to the conduction band electron population. S1 The emission current is linear with the electron concentration: J em nK PETE (S2) EBC K PETE qvx exp K BTC (S3) The reverse current follows the standard formulation for vacuum thermionic converters S2: EBA J rev ATA2 exp A K BTA (S4) EBC and EBA are the cathode and anode added energy barriers formed by the space charge in the inter electrodes space. A discussion of how these energy barriers are determined is found below. vx qK BT / 2 me is the average electron velocity perpendicular to the surface, me is the electron mass, is the cathode surface electron affinity, A is the work function of the anode, A 120 A / cm K is the Richardson-Dushman constant, and TC and TA are the cathode and anode temperatures, respectively. Since this work is concerned with the device upper efficiency limits, only radiative recombination is considered. Under non-equilibrium conditions, the rate of photons emitted from a unit area obeys S3 : 2 2 R R0 np neq peq (S5) Where:S3,S4 2 R0 3 2 hc Eg h d h 2 h exp 1 K BTC (S6) neq , peq are the equilibrium charge carrier concentrations. The non-equilibrium recombination per unit volume R' is R' 1 R0 np neq peq L neq peq (S7) In the presence of SRH and surface recombination with an effective recombination velocity S, the non-equilibrium per volume recombination term is: R' 1 R0 n p neq peq 1 S n neq L neq peq L (S8) Assuming equal hole and electrons excess carrier concentration n n neq p peq and inserting Eqs. (S2), (S5), (S7), (S8) into Eq. (S1) yields: K R n peq R0 J K n 2 PETE 0 eq S n E E g rev PETE neq 0 neq peq neq peq q q q (S9) E Eg is the solar photons flux with energies above the cathode band gap. Solving Eq. (S9) for the excess carriers' concentration n and inserting the solution in equation (S2) yields the device net current at a specific voltage. The conversion efficiency is defined as: max V J em V J rev v Psun (S10) The cathode temperature is determined according to an energy balance coupled to the charge carriers equations described above. It is assumed that the anode is perfectly reflective, namely, there is no radiative heat transfer between the cathode and anode. By assuming an infrared (IR) coupling element in the cathode that allows absorption of the subbandgap photons of the incident radiation as heat, the energy balance on the cathode is:1 Psun J rev B 2KBTA PIR P0 Prad J em B 2KBTC (S11) The terms J em 2 K BTC , J rev 2 K BTA represent the energy that is carried away by the electrons emitted from the cathode and anode. B C EBC is the energy barrier height for electrons in the cathode. P0 is the cathode equilibrium radiative recombination loss:S3 2 P0 3 2 hc h d h 3 Eg h exp 1 K BTC (S12) Prad is the enhancement of the radiative recombination loss due to non-equilibrium:S3 np Prad P0 1 neq peq (S13) PIR is the radiation emitted from the IR coupling element, which absorbs all sub-bandgap radiation and is completely transparent to supra-bandgap photons: 2 PIR 3 2 hc Eg 0 h d h 3 e h K BTC (S14) 1 The sum of PIR and P0 is the full-spectrum black body emission at temperature TC. In order to calculate the conversion efficiency, the particle balance in equation (S1) is coupled to the cathode energy balance of Eq. (S11). 1.2 Space charge theory adjusted to PETE devices The negative space charge effect in PETE devices can be analyzed using Langmuir space charge theory. Following previous studies2,5, the potential distribution within the inter electrodes space is found by solving Vlasov's and Poisson's equation. The development presented here considers the electrons in the inter electrode space as collisionless gas and assumes that the space charge is formed primarily by electrons emitted from the cathode i.e. J rev J em S2,S5. The motive electrode space, , is defined by: qVES (S15) 𝑉ES is the electrostatic potential. The motive diagram in the inter-electrode space is analogous to the energy band diagram in semiconductors, where the motive at the semiconductor-vacuum interface is exactly the vacuum level at this point. Motive diagrams for thermionic converters can be found in Ref. S2. Error! Reference source not found.Figure S1 shows schematic motive diagrams of a PETE device.6 x is the position between the two electrodes where the cathode is at x 0 and the anode is at x d . The cathode and anode are held at temperature Tc and TA respectively. The anode is at voltage V with respect to the cathode Fermi level. Figure S1(a) illustrates the saturation point, where the maximum motive is just outside the cathode. For voltages below this point, the emitted electrons are accelerated towards the anode while crossing the vacuum spacing. Hence, in this regime, negative space charge effects are not considered and the current voltage characteristics are as discussed in Ref. S1. Figure S1(b) illustrates the situation where the maximum motive m is at a distance of xm within the inter-electrode space. This is the space charge limited regime, where electrons emitted from the cathode need to overcome an added energy barrier before they can reach the anode, and the height of the barrier depends on the amount of space charge present in the gap. The energy barrier repels some of the electrons emitted from the cathode, which do not have sufficient energy, and accelerates them back towards the cathode. Figure S1(c) shows the critical point, where the maximum motive is at a point just outside the anode. For voltages above the critical point, the energy barrier for electrons emitted from the cathode is EBC eV C A , which is no longer dependent on the amount of negative space charge present in the inter electrodes gap. Figure S1: PETE motive diagrams (a) saturation point, (b) space charge limited regime, (c) critical point.S6 The collisionless electrons distribution function is determined by the solution of Vlasov's equation:S7 0.5 m x u vex x 2 3 2 m 2 e m x me ve x me f x, ve 2ne xm exp 0.5 2 K BTC K BTC 2 K BTC m x u vex x 2 me x xm (S16) x xm u is the step function, xm is the location of the maximum motive, ne xm is the number density of electrons at xm , m is the maximum motive. me is the electron mass, ve x vex x vey2 vez2 2 motive at point x . The electron density is calculated by inserting Eq. (S16) into: 1/2 and x is the value of the ne x dvez dvey dvex f x, vex (S17) After integration, the electron density at every point in the space between the cathode ( x 0 ) and anode ( x d ) follows: 1 erf x ne x ne xm exp m K BTC 1 erf 1 x 2 m K T B C 1 2 m x K T B C x xm (S18) x xm The motive's equation is Poisson's equation converted to energy units: d 2 x dx 2 q 2 ne x (S19) ò0 Substituting Eq. (S18) into Eq. (S19) and using dimensionless quantities: x xm m and for dimensionless K BTC xo motive and distance respectively, yields the dimensionless Poisson's equation: 0 0 1 erf 12 d 2 2 exp 1 d 1 erf 2 2 (S20) x02 0 K BTC / 2e 2 ne xm is a scaling factor. The initial conditions for Eq. (S20) are γ 0 0 , γ 0 0 . The solution of Eq. (S20) does not depend on the parameters of a specific problem and the operating condition. Hence, Eq. (S20) needs to be solved only once. x0 can be written in an alternative convenient way, as a function of J em : 2K 3 x0 0 B 2 2me q 0.25 TC0.75 0.5 J em (S21) The relation between the dimensionless distances C and A obeys: A C 2 d x0 (S22) Numerical procedure The numerical procedure is similar to the procedure done in standard thermionic devices S2,S5 and in the previous PETE model suggested in Ref. S6. However, in order to allow the electron concentration to vary with the operating point, the PETE particle balance equations from section 1.1 must be coupled to the negative space charge model presented in section 1.2. When an energy balance is applied, equation (S11) is coupled to the equation set as well. First, we find the voltages and currents corresponding to the saturation point and the critical point. Then, using these voltages as upper and lower bounds, we calculate the currents and matching voltages within the space charge limited range. For voltages below the saturation point or above the critical point, the negative space charge in the gap does not affect the emission current and the calculation is as in Ref. S1. 2.1 Saturation point At voltages below the saturation point, the maximum motive is just outside the cathode and C A V . Hence, there is no added energy barrier for the emitted electrons from the cathode, and EBC 0 . The added energy barrier for the electrons emitted from the anode is determined by the voltage EBA C V A . As a results, the number of electrons that are emitted from the anode, reach the cathode and contribute to the cathode's conduction band population is also influenced by the voltage. In most cases this contribution is small. At the saturation point the dimensionless position of maximum motive with respect to the cathode is C sat 0 , and the dimensionless position of maximum motive with respect to the anode Asat is: d 2 m q 2 A sat V 2 e3 x0 ò0 kB 1 4 1/2 J em sat V 3 Tc d (S23) 4 The saturation point voltage Vsat is found by using , the numerical solution of Eq. (S20), and solving numerically: Vsat C A γ A sat Vsat K BTC (S24) q where ξ Asat Vsat is as in Eq. (S23). 2.2 Critical point At the critical point the maximum motive is just outside the anode. Under these conditions C A Vcrit . Hence, the energy barrier for electrons emitted from the cathode is EBC A Vcrit C . Since there is no extra energy barrier for crit the emitted electrons from the anode, EBA 0 . In this case dimensionless position of the maximum motive with crit respect to the anode is, Acrit 0 , and the dimensionless position of the maximum motive with respect to the cathode is: 2 me q 2 d C crit V 2 3 x0 ò0 k B 1 4 1/2 J em crit V The critical point voltage, Vcrit , is determined by inserting Eq. (S25) into 3 Tc 4 d (S25) Vcrit C A γ C crit Vcrit K BTC q (S26) and solving numerically for Vcrit . 2.3 Space charge limited regime The following procedure can be used for each cathode emission current J em between J crit and J sat in order to find the matching voltage. This procedure is similar to the one given in S2,S5,S6, however it was modified in order to account for the dependence of the cathode electrons concentration on the operating voltage: 1. 2. 3. 4. 5. 6. 7. Choose a voltage between Vsat and Vcrit Choose an initial value for γC Calculate the emission current, Jem, according to the particle balance in equations (S1-S8) Calculate the dimensionless distance, ξC(γC), according to the solution of Eq. (S20) Calculate x0 according to Eq. (S21) and the solution of step 3 Calculate the dimensionless distance, ξA(γC), according to Eq. (S22) and the solution of steps (4-5) Calculate the maximum dimensionless motive with respect to the anode, γA(ξA), according to the solution of Eq. (18) and the solution of step 7 8. Calculate the maximum dimensionless motive with respect to the cathode, γC as defined by the motive diagram and the result of step 7: C C A A K BTC qV K BTC (S27) 9. Repeat steps 3-8 with γC calculated in step 8 until reaching convergence. For current above J sat and below J crit , the space charge does not create an additional barrier, and the corresponding voltage is calculated using the procedure as was shown in Ref S1. It should be noted that when the negative space charge effects are negligible, the maximum power point voltage is higher than the voltage at the critical point. 3 Surface and Shockley Reed Hall Effects Figure S2 shows the current voltage curves of PETE converters subject to negative space charge with several effective surface and SRH recombination velocities. The simulation parameters are as in Figure 1, the gap width is 2μm. Since the cathode operates in the PETE regime, increasing the recombination reduces the cathode electrons concentration and with it the emission current. This effect is most dominant in the space charge limited regime (voltages between 0.37V and 1.25V for S=0cm/s) because the added recombination prevents the cathode electrons concentration from increasing with voltage. For effective recombination velocities above 100cm/s the added recombination reduces the emission current at voltages below the saturation voltage as well. Furthermore, since the emission current changes with the effective recombination velocity, the voltage range of the space charge limited regime also changes with the effective recombination velocity. The inset of Figure S2 shows the saturation voltage, Vsat, and critical voltage, Vcrit, as a function of the effective recombination velocity, S. The emission current reduction with the recombination velocity leads to a clear reduction in the voltage range of the negative space charge regime. For these reasons the model with no electron recycling presented in Ref. S6, in which only electrons that are reflected by the electric field in the gap are annihilated, cannot represent surface recombination effects properly. Since the analysis in this work is based on a net particle balance, it cannot discriminate between bulk SRH and surface recombination. In order to fully address the combined effect of surface recombination and negative space charge a one dimensional model is required such as in S8–S10. Figure S2, Current-voltage characteristics of PETE converters subject to negative space charge with several effective surface and SRH recombination velocities. The simulation parameters are as in Figure 1, the gap width is 2μm. 4 Nomenclature Parameter Description <vx> Average electron velocity [cm/sec] ARD Richardson constant [A/cm2K2] c Speed of light [cm/sec] d Distance between cathode and anode [cm] EBA Anode added energy barrier [eV] EBC Cathode added energy barrier [eV] Eg Cathode band gap [eV] erf Error function f(x,ve ) Distribution function of electrons in inter electrodes space [sec3/cm6] G Optical generation [1/cm3sec] h Planks constant [eV∙sec] hν Photon energy [eV] Jem Cathode emission current density [A/cm2] Jem-crit Cathode emission current density at the critical point [A/cm2] Jem-sat Cathode emission current density at the saturation point [A/cm2] Jrev Anode emission current density [A/cm2] Jrev-crit Anode emission current density at the critical point [A/cm2] Jrev-sat Anode emission current density at the saturation point [A/cm2] KB Boltzmann's constant [eV/K] KPETE Emission current coefficient [A∙cm] L Cathode thickness [cm] me Electron effective mass [Kg] n Cathode electron concentration [cm-3] ne(x) Electron density in inter electrodes space [1/cm3] ne(xm) Electron density at the maximum motive [1/cm3] neq Cathode equilibrium electron concentration [cm-3] p Cathode equilibrium hole concentration [cm-3] P0 Cathode equilibrium radiation [W/cm2] peq Cathode equilibrium hole concentration [cm-3] PIR Infra-red coupling radiative losses [W/cm2] Prad Radiative recombination losses [W/cm2] Psun Input solar power flux [W/cm2] q Electron charge [C] R Non equilibrium radiative recombination [1/cm2sec] R' Bulk non equilibrium average recombination [1/cm3sec] R0 Equilibrium radiative recombination [1/cm2sec] S Effective surface and SRH recombination velocity [cm/sec] TA Anode temperature[K] Tc Cathode temperature[K] u Step function V Operating voltage [V] Vcrit Operating voltage at critical point [V] ve Electron velocity in inter electrodes space [cm/sec] VES Electrostatic potential [V] vox Minimum velocity in the x direction [cm/sec] Vsat Operating voltage at saturation point [V] x Lateral position between electrodes [cm] x0 Scaling factor [cm] xm Location of maximum motive [cm] γ Dimensionless motive γA Dimensionless motive at anode surface γA-cirt Dimensionless motive at anode surface at critical point γA-SAT Dimensionless motive at anode surface at saturation point γC Dimensionless motive at cathode surface γC-cirt Dimensionless motive at cathode surface at critical point γC-SAT Dimensionless motive at cathode surface at saturation point δn Access carriers concentration [1/cm3] ε0 vacuum permittivity [F/cm] η PETE conversion efficiency ξ Dimensionless distance ξA Dimensionless distance at anode surface ξA-cirt Dimensionless distance at anode surface at critical point ξA-SAT Dimensionless distance at anode surface at saturation point ξC Dimensionless distance at cathode surface ξC-cirt Dimensionless distance at cathode surface at critical point ξC-SAT Dimensionless distance at cathode surface at saturation point Φ(E>Eg) Above band gap photon flux [1/cm2sec] ϕA Anode work function [eV] ϕB Cathode electron emission barrier[eV] ϕC Cathode work function [eV] χ Cathode electron affinity [eV] ψ The motive in the inter electrode space [eV] ψm Maximum motive [eV] References S1 G. Segev, Y. Rosenwaks, and A. Kribus, Sol. Energy Mater. Sol. Cells 107, 125 (2012). S2 G.N. Hatsopoulos and E.P. Gyftopoulos, Thermionic Energy Conversion Vol. 1: Processes and Devices (MIT Press, Cambridge, MA, USA, 1973). S3 P. Wurfel, Physics of Solar Cells from Principles to New Concepts (Wiley, 2005). S4 J.W. Schwede, I. Bargatin, D.C. Riley, B.E. Hardin, S.J. Rosenthal, Y. Sun, F. Schmitt, P. Pianetta, R.T. Howe, Z.-X. Shen, and N. a Melosh, Nat. Mater. 9, 762 (2010). S5 J.R. Smith, G.L. Bilbro, and R.J. Nemanich, J. Vac. Sci. Technol. B Microelectron. Nanom. Struct. 27, 1132 (2009). S6 S. Su, Y. Wang, T. Liu, G. Su, and J. Chen, Sol. Energy Mater. Sol. Cells 121, 137 (2014). S7 I. Langmuir, Phys. Rev. 21, (1923). S8 G. Segev, Y. Rosenwaks, and A. Kribus, J. Appl. Phys. 044505, (2013). S9 K. Sahasrabuddhe, J.W. Schwede, I. Bargatin, J. Jean, R.T. Howe, Z.-X. Shen, and N. a. Melosh, J. Appl. Phys. 112, 094907 (2012). S10 A. Varpula and M. Prunnila, J. Appl. Phys. 112, 44506 (2012).