Program Director/Principal Investigator: Krishna, Sanjay
BIOGRAPHICAL SKETCH
Provide the following information for the Senior/key personnel and other significant contributors in the order listed on Form Page 2
Follow this format for each person. DO NOT EXCEED 4 PAGES.
NAME
POSITION TITLE
Sanjay Krishna
Professor/Regents’ Lecturer, Electrical and Computer
Engineering Department
Chief Technology Officer, SKINfrared LLC
EDUCATION/TRAINING
INSTITUTION AND LOCATION
S.S.I.H.L Bangalore
Indian Institute of Technology, Madras
University of Michigan Ann Arbor
University of Michigan Ann Arbor
DEGREE
(if applicable)
YEAR(s)
B. Sc (Hons)
M.Sc
M.S.
Ph D
1994
1996
1999
2001
FIELD OF STUDY
Physics
Physics
Electrical Engineering
Applied Physics
A. Personal Statement
MY SIGNIFICANT RESEARCH ACHIEVEMENTS
 Demonstration of first Plasmonic Quantum Dot Focal Plane Array: In collaboration with Prof. Brueck’s
group at UNM, demonstrated resonant enhancement in a 320x256 focal plane array (Nature Comm, 2011)
 Design and Development of Quantum Dots in a Well Infrared Detectors: In Aug 2002, published the first
paper on quantum dots in a well detectors, which are now being pursued by at least ten research groups
around the world.
 Demonstration of InAs FETs on Silicon Substrates: In collaboration with Prof. Ali Javey’s group, we
demonstrated InAs FETs on silicon substrates with large on-off ratio and small leakage current (Nature, 2010)
 Demonstration of the first FPA with strain layer superlattice based on nBn Design In collaboration with
QmagiQ LLC, we have demonstrated the first MWIR InAs/GaSB SLS array with a nBn design using a 320x256
focal plane array with a noise equivalent temperature difference of 24mK at 77K
 Demonstration of the first 640x512 Quantum Dot based Camera: In collaboration with NASA JPL, we have
demonstrated the first quantum dot camera using a 640x512 focal plane array with a noise equivalent
temperature difference of 40mK at 60K
 Demonstration of the first two color Quantum Dot based Camera In collaboration with QmagiQ LLC, we
have demonstrated the first two color (MWIR/LWIR) quantum dot camera using a single bump 320x256 focal
plane array.
 Demonstration of the first long wave infared Quantum Dot based Camera In collaboration with BAE
systems and a spin-off from UNM, Zia Laser Inc, we have demonstrated the first two long wave infrared (LWIR)
QD camera based on a 320x256 focal plane array.
 Demonstration of three color (MWIR/LWIR/VLWIR) DWELL detector We have recently demonstrated a 3
color quantum dot in a well detector with response in the MWIR (p~4m), LWIR (p~8 m) and VLWIR (p~23
m) at 80K. This is the highest reported temperature for any intersubband VLWIR detector.
 Operating Wavelength Control in DWELL detectors
By heterostructure engineering of the DWELL structure, we have obtained spectral response tailorable from 7.2
the entire LWIR atmospheric window (8 Demonstration of Smart DWELL Sensors
We have observed quantum confined Stark effect in the DWELL detectors that we have fabricated. The raw
data was fed into a projection algorithm developed by Prof. Hayat and Prof. Tyo to realize a “smart” detectors
whose center wavelength and spectral width could be independently controlled.
 Strain patterning of growth front to achieve uniform QDs
Using a layer of buried InAlAs stressor dots, InAs QDs with very low size fluctuations (PL linewidth =19 meV at
T=17K) and increased areal density (~2x1011cm-2) were grown on a GaAs substrate
 Demonstration of the first quantum dot laser grown on a Si substrate
Using a thermally
cycled buffer layer, we demonstrated the first InGaAs QD laser grown on a silicon substrate. The large lattice
and thermal mismatch between GaAs and Si created many dislocations and an optimized buffer layer was
designed to filter these dislocations.
 First demonstration of intersubband emission from QDs
Demonstration of the first quantum dot intersubband LED and first demonstration of intraband gain and
stimulated emission from self organized quantum dots at 13 m.
PHS 398/2590 (Rev. 06/09
Biographical Sketch Format Page
Program Director/Principal Investigator: Krishna, Sanjay
B. Positions and Honors
Positions:
1995
1996-1997
1997-1998
1998-2001
2001-2006
2006-2010
2010-Present
2009-2012
2009-2012
2010-Present
Visiting Student Researcher, Tata Inst. Fundamental Research, India
Graduate Student Assistant, Tata Inst. Fundamental Research, India
Graduate Student Instructor, University of Michigan, Ann Arbor
Graduate Student Research Assistant, University of Michigan, Ann Arbor
Assistant Professor, ECE Dept, University of New Mexico, Albuquerque
Associate Professor, ECE Dept, University of New Mexico, Albuquerque
Professor, ECE Dept, University of New Mexico, Albuquerque
Associate Director, Center for High Technology Materials, University of New Mexico
UNM Regents Lecturer
Chief Technology Officer, SK Infrared LLC, Albuquerque
Honors:
1996
1997
1997
1998
2003
2004
2004
2005
2007
2007
2008
2008
2009
2009
2010
2010
2010
2011
2011
Gold Medal from Indian Institute of Technology, Madras
First in Grad School of Physics at Tata Institute of Fundamental Research
Graduate Student Fellowship, Dept. of Physics, University of Michigan
Best student paper award at North American Molecular Beam Epitaxy Conference
Outstanding Young Engineer Award by IEEE Albuquerque Chapter
ECE Outstanding Researcher Award
Oak Ridge Associated Universities Ralph Powe Jr. Faculty Enhancement Award
School of Engineering Junior Faculty Teaching Award
North American Molecular Beam Epitaxy Young Investigator Award
Defense Intelligence Agency Chief Scientist Award for Excellence
IEEE-Nanotechnology Council Early Career Achievement Award
SPIE Early Career Achievement Award
UNM School of Engineering Sr. Research Excellence Award
UNM Regents Lecturer Award
UNM Teacher of the Year Award
Fellow, SPIE
Sr. Gledden Fellow, University of Western Australia
Lange Lecturer in Materials, University of California, Santa Barbara
ECE Gardner-Zemke Award for Research Excellence
C. Selected Peer-reviewed Publications
 Nutan Gautam, Stephen Myers, Ajit V. Barve, IEEE, Brianna Klein,Edward. P. Smith, Dave. R. Rhiger, Ha Sul Kim, Zhao-Bing
Tian, and Sanjay Krishna, “Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer
Superlattices”, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 49, NO. 2, FEBRUARY (2013)
 J. O. Kim, S. Sengupta, A. V. Barve, Y. D. Sharma, S. Adhikary, S. J. Lee,S. K. Noh, M. S. Allen, J. W. Allen, S. Chakrabarti, and
S. Krishna, “Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors”, APPLIED PHYSICS LETTERS
102, 011131 (2013)
 Nutan Gautam, Stephen Myersa, Ajit V. Barve, Brianna Klein, E.P. Smith, Dave Rhiger, Elena Plis, Maya N. Kutty , Nathan Henry,
Ted Schuler-Sandy, S. Krishna, “Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer
superlattices” Infrared Physics & Technology (2013)

Woo-Yong Jang, Majeed M. Hayat, Payman Zarkesh-Ha, and Sanjay Krishna, “Continuous time-varying biasing approach
forspectrally tunable infrared detectors”, OPTICS EXPRESS 29823 Vol. 20, No. 28 December (2012)

V. M. Cowan, C. P. Morath, J. E. Hubbs, S. Myers, E. Plis, and S. Krishna, “Radiation tolerance characterization of dual band
InAs/GaSb type-II strain-layer superlattice pBp detectors using 63 MeV protons”, APPLIED PHYSICS LETTERS 101,
251108 (2012)
 G. A. Umana-Membreno, B. Klein, H. Kala,J. Antoszewski, N. Gautam, M. N. Kutty, E. Plis, S. Krishna, and L. Faraone, “Vertical
minority carrier electron transport in p-type InAs/GaSb type-II superlattices” ,APPLIED PHYSICS LETTERS 101, 253515
(2012)
PHS 398/2590 (Rev. 06/09
Biographical Sketch Format Page
 Program Director/Principal Investigator: Krishna, Sanjay
 Eric A. DeCuir, Jr. ; Gregory P. Meissner ; Priyalal S. Wijewarnasuriya ; Nutan Gautam ; Sanjay Krishna ; Nibir K. Dhar ; Roger E.
Welser ; Ashok K. Sood, “Long-wave type-II superlattice detectors with unipolar electron and hole barriers”, Opt. Eng. 51(12),
124001 (Dec 03, 2012).
 Nutan Gautam, Ajit Barve, and Sanjay Krishna, “Identification of quantum confined interband transitions in type-II InAs/GaSb
superlattices using polarization sensitive photocurrent spectroscopy”, Appl. Phys. Lett. 101, 221119 (2012)
 Barve, A.V.; Sengupta, S.; Jun Oh Kim; Montoya, J.; Klein, B.; Shirazi, M.A.; Zamiri, M.; Sharma, Y.D.; Adhikary, S.; Godoy,
S.E.; Woo-Yong Jang; Fiorante, G.R.C.; Chakrabarti, S.; Krishna, S. “Barrier Selection Rules for Quantum Dots-in-a-Well
Infrared Photodetector IEEE Journal of Quantum Electronics”, Volume: 48 , Issue: 10 2012 , PP: 1243 – 1251(2012)
 T. Schuler-Sandy, S. Myers, B. Klein, N. Gautam, P. Ahirwar, Z.-B. Tian, T. Rotter, G. Balakrishnan, E. Plis, and S. Krishna,
“Gallium free type II InAs/InAs Sb superlattice photodetectors”, Appl. Phys. Lett. 101, 071111 (2012)
x
1-x
 Nutan Gautam,S. Myers, A. V. Barve, Brianna Klein, E. P. Smith, D. R. Rhiger,L. R. Dawson, and S. Krishna, “High operating
temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice”, Appl. Phys.
Lett. 101, 021106 (2012)
 S. Sengupta, J. O. Kim, A. V. Barve, S. Adhikary, Y. D. Sharma, N. Gautam, S. J. Lee,S. K. Noh, S. Chakrabarti, and S. Krishna,
“Sub-monolayer quantum dots in confinement enhanced dots-in-a-well Heterostructure”, APPLIED PHYSICS LETTERS 100,
191111 (2012).
 A.V. Barve, S. Meesala, S. Sengupta, J. O. Kim, S. Chakrabarti and S. Krishna, “Investigation of Non-uniform Electric Field in
Intersubband Quantum Infrared Photodetectors” Applied Physics Letters, Vol.100, pp.191107, 2012,

P Martyniuk, J Wr´obel, E Plis, P Madejczyk, A Kowalewski, WGawron, S Krishna and A Rogalski, “Performance modeling of
MWIR InAs/GaSb/B–Al0.2Ga0.8Sb type-II superlattice nBn detector”, Semicond. Sci. Technol. 27 (2012)
 Hui Fang, Steven Chuang, Kuniharu Takei, Ha Sul Kim, Elena Plis, Chin-Hung Liu, Sanjay Krishna, Yu-Lun Chueh, and Ali Javey,
“Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors”, IEEE ELECTRON DEVICE LETTERS, VOL.
33, NO. 4, APRIL 2012
 Kuniharu Takei, Morten Madsen, Hui Fang, Rehan Kapadia, Steven Chuang,Ha Sul Kim, Chin-Hung Liu, E. Plis, Junghyo Nah,
Sanjay Krishna, Yu-Lun Chueh,Jing Guo, and Ali Javey, “Nanoscale InGaSb Heterostructure Membranes on Si Substrates for
High Hole Mobility Transistors” , Nano Letters, 12 March, (2012).
 Elena A. Plis, Maya Narayanan Kutty, and Sanjay Krishna, “Passivation techniques for InAs/GaSb strained layer superlattice
detectors”, Laser Photonics Rev., 1–15 (2012)
 E.A. Plis,M.N. Kutty,S. Myers,A. Rathi,E.H. Aifer,I. Vurgaftman, and S. Krishna, “Performance improvement of long-wave
infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation”, Infrared Physics & Technology
February (2012)
 D. Lackner , M. Steger M. L. W. Thewalt, O. J. Pitts, Y. T. Cherng, S. P. Watkins, E. Plis, and S. Krishna, “InAs/InAsSb strain
balanced superlattices for optical detectors: Material properties and energy band simulations”, J. Appl. Phys. 111, 034507
(2012)
 A. V. Barve and S. Krishna, “Photovoltaic quantum dot quantum cascade infrared photodetector”, Appl. Phys. Lett. 100, 021105
(2012)
 S. C. Lee, Y. D. Sharma, S. Krishna and S. R. J. Brueck, “Leaky-mode effects in plasmonic-coupled quantum dot infrared
photodetectors”, Appl. Phys. Lett. 100, 011110 (2012)
PHS 398/2590 (Rev. 06/09
Biographical Sketch Format Page
Program Director/Principal Investigator: Krishna, Sanjay
D. Research Support
Grantor
Start Date
End Date
Project Name and Goals
A Reconfigurable readout circuit for integrated infrared spectral
sensing (PDS #113/P332)
NSF
08/15/2009
07/31/2013
Regents Endowed Faculty
Indian Institute of Tech.(IIT
Mumbai)
10/23/2009
10/23/2013
03/31/2010
12/31/2012
AFOSR (MICA Lab)
04/15/2010
04/14/2015
Tufts Univ. Core Facility
01/01/2010
06/30/2012
Elec. & Comp Eng-Lectureship
Development of Quantum dots in Well detectors for Mid & Long
Wave Infrared Imaging
Heterogenous Material Integration & Band engineering w/ Type
II Superlattices
InAs/InGaSb Type II Superlattice Based Thermophotovoltaic
(TPV) Devices
MBE Facilitation
07/14/2010
open
MBE Facilitation
Polaris Sensor Tech. Inc.
Korea Research Institute of
Standard & Sci. KRISS
06/11/2010
04/30/2012
09/01/2010
08/31/2013
Adapative Intergrated Multi-Modal Sensor Tech. Inc.
Nanostructures Far-IR/THz Detectors for Next Generation
Imaging Tech. Phase II
Generic Donor Raytheon C
10/26/2010
open
Magnolia Optical Technology 03/07/2011
12/31/2013
Generic Donor Raytheon C
Development of Low Dark Current Strained layer superlattice
(SLS) devices for next generation Infrared focal plane arrays
RNET Tech.
02/11/2011
02/15/2013
Advanced ROIC Tech. For SLS Photodectectors
UES, Inc.
07/01/2011
06/30/2013
Boston College
07/27/2011
05/31/2013
Sprial Plasmonic Structures for Polarimety
Metamaterials for Compressive Sensing Imaging at Terahertz
Frequencies & Thermophotovltaic Energy
AFRL
Korea Research Institute of
Standard & Sci. KRISS
11/14/2011
02/13/2013
09/01/2010
08/31/2013
Quantum Dot Detectors with Plasmoni Structures
Nanostructures Far-IR/THz Detectors for Next Generation
Imaging Tech. Phase II
AFRL
11/22/2011
03/21/2013
Barrier Engineered Quantum Dot Infrared Photodectors
SNL
12/16/2011
09/30/2013
Nanoantenna Enabled Focal Plane Array
AFOSR BLOCK
03/01/2012
02/28/2015
Optoelectronics Research Center AFOSR Block Grant
AFRL
11/08/2011
11/08/2012
National Reconnaissance Office
08/01/2012
07/31/2015
Submonolayer and Quantum Dots in a Well Detectors
Investigation of Carrier Lifetime & Dark Currents in Type II
Superlattices
QSIP Conf. 2012
CHTM Director Intelligent
Imaging Initiative
08/14/2012
08/14/2013
QSIP Conf. 2012
08/21/2012
open
CHTM Intelligent Imaging Initiative
PHS 398/2590 (Rev. 06/09
Biographical Sketch Format Page