QSIP 2014
Quantum Structure Infrared Photodetector International Conference
QSIP 2014
June 29 – July 3, 2014
Santa Fe, New Mexico (USA)
Program
The final program will be available on QSIP14 website once approved by the Program Committee
Preliminary program:
Sunday, June 29 - 7:30 pm Welcome Reception and Registration
Monday, June 30
7:00 am Breakfast
Registration Desk will be open at 7:00 am.
8:00-10:00 am M1: Plenary Session – Chair: S. Krishna
IR Sensors: Present Status and Perspectives
8 : 00
8 : 309 : 00
9 : 009 : 30
9 : 30 10 : 00
Opening (Welcoming remarks and tribute to H.C. Liu by S. Krishna/Unil Perera)
Overview of US Army NVESD III-V IR Material Development
M. Tidrow, NVESD (USA)
InAs/GaSb Superlattice Infrared Detectors
R. Rehm, F. Lemke, M. Masur, J.Schmitz, T. Stadelmann, M. Wauro, A. Wörl, and M. Walther
Fraunhofer-Institute for Applied Solid State Physics (Germany)
Presentation by M. Razeghi (title TBD)
M. Razeghi
Center for Quantum Devices, EECS Dept., Northwestern University (USA)
Paper
ID
M1-1
M1-2
M1-3
10:30-12:10 pm
Session M2: Barrier Engineered Detectors
Chair – S. V. Bandara
10:30
10:45
10:50
11:05
11:10
11:25
Low Operating Bias InAs/GaSb Strain Layer Superlattice LWIR Detector
N. Baril1, S. Bandara2, L. Hoglund3, N. Henry1, A. Brown1, C. Billman2, P. Maloney2, E.
Nallon2, M.Tidrow2, and J. Pellegrino2
1Corbin Company, Alexandria, Virginia 22314
2U. S. Army RDECOM CERDEC NVESD, Ft. Belvoir, Virginia 22060
3Jet Propulsion Laboratory, Pasadena, California, 91109
Questions and Discussion
Dopant-free superlattice MWIR pin photodiode
M. Delmas1, J.-B. Rodriguez1, E. Giard2, I. Ribet-Mohamed2, P. Christol1
1Institut d’Electronique du Sud / UMR-CNRS 5214- Université Montpellier 2, Place Eugène
Bataillon, 34095 Montpellier (France)
2ONERA / Chemin de la Hunière, 91761 Palaiseau (France)
Questions and Discussion
Measurement of absorption/external quantum efficiency of InAs/GaSb Type II
superlattice
H. Katayama1, T.Takekawa2, M. Kimata2, H. Inada3, and Y. Iguchi3
1Japan Aerospace Exploration Agency (Japan)
2Ritsumeikan University (Japan)
3Sumitomo Electric Industries, Ltd. (Japan)
Questions and Discussion
1
M2-1
M2-2
M2-3
QSIP 2014
11:45
11:50
12:05
Interband Cascade Infrared Photodetectors with Very Long Cutoff Wavelengths
H. Lotfi1, L. Li1, H. Ye1,R. T. Hinkey1,2, L. Lei1,2, R. Q. Yang1, J. C. Keay2 ,T.D. Mishima2,
M.B. Santos2, and M. B. Johnson2
1School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK (USA)
2Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman,
OK (USA)
Questions and Discussion
Interband Cascade infrared photodetectors and their focal plane arrays
Z.-B. Tian, T. Schuler-Sandy, S.E. Godoy, C. Kadlec, H.S. Kim, and S. Krishna
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106
(USA)
Questions and Discussion
M2-4
M2-5
12:10-1:30 pm Lunch
1:30-2:50 pm
Session M3: Gallium-free Superlattice Detectors
Chair – D. Z. Ting
Mid-wave infrared nBn photodetectors using InAs/InAsSb type-II superlattices
Zh.-Y. He, O. Orkun Cellek, Zh.Y.Lin, S. Liu, and Y.-H. Zhang
1:30
Center for Photonics Innovation, School of Electrical, Computer & Energy Engineering,
Arizona State University, Tempe, AZ 85287 (USA)
1:45
Questions and Discussion
Mid-infrared InAs0.91Sb0.09-based nBn photodetectors with Al0.9Ga0.1As0.08Sb0.92 barrier
layers – grown on GaAs, using an Interfacial Misfit Array, and on native GaSb
A. P. Craig1, A. R. J. Marshall1, Z.-B. Tian2, and S. Krishna2
1:50
1Physics Department, Lancaster University, Lancaster LA1 4YB (UK)
2Center for High Technology Materials, Department of Electrical and Computer Engineering,
University of New Mexico, Albuquerque, New Mexico 87106 (USA)
2:05
Questions and Discussion
Improved carrier lifetime sensitivity in InAs/InAsSb type-II superlattices
E. A. Kadlec1,2, J. K. Kim1, B. V. Olson1, S. D. Hawkins1, J. F Klem1, and E.A. Shaner1
2:10
1 Sandia National Laboratories, Albuquerque, NM 87185 (USA)
2 The University of New Mexico, Albuquerque, NM 87131 (USA)
2:25
Questions and Discussion
Carrier lifetimes in InAs/InAsSb type-II superlattice nBn photodetectors
B. V. Olson, J. K. Kim, E. Kadlec, S. D. Hawkins, J. F. Klem, T. Fortune, D. Leonhardt, W.
2:30
Coon, and E. A. Shaner
Sandia National Laboratories, Albuquerque, NM 87185 (USA)
2:45
Questions and Discussion
M3-1
M3-2
M3-3
M3-4
2:50-3:30 pm Coffee Break
3:30-4:50 pm
Session M4: Metamaterials and Plasmonics
Chair – M. Tidrow
Fabrication of Resonator-quantum well infrared photodetector test devices and focal
plane array (FPA)
3:30
J. Sun, K. K. Choi, E. A. DeCuir, K. A. Olver, P. Wijewarnasuriya
U.S. Army Research Laboratory, Adelphi, MD (USA)
3:45
Questions and Discussion
Progress in Resonant Quantum Well Infrared Photodetector (R-QWIP) Focal Plane
Arrays
3:50
E. A. DeCuir Jr., K. K. Choi, J. Sun, P. Wijewarnasuriya, R.E. DeWames
U.S. Army Research Laboratory, Adelphi, MD (USA)
4:05
Questions and Discussion
Metainfrared Detectors
4:10
J. Montoya and S. Krishna
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106
2
M4-1
M4-2
M4-3
QSIP 2014
4:25
4:30
4:45
(USA)
Questions and Discussion
Integrated Infrared Up-Conversion Imaging Device using Nano-Plasmonic Materials and
Nano-Photonic Structures
G. Sarusi
Electrooptics Engineering Department and Isle Katz Center for Nanoscience and
Nanotechnology, Ben Gurion University of the Negev, Beer-Sheva (Israel)
Questions and Discussion
6-00-7:00 pm
Rump Session/Panel Discussion
Panelists and Moderators: to be determined.
7-00 pm Dinner on your own
3
M4-4
QSIP 2014
Tuesday, July 1
7:30 am Breakfast
8-30-10:10 am
Session T1: QWIPs
Chair – C. Besikci
8:30
1/f Noise QWIPs and nBn Detectors
S. D. Gunapala, S. B. Rafol, D. Z. Ting, A. Soibel, L. Hoeglund, C. J. Hill, A. Khoshakhlagh, J.
K. Liu, J. M. Mumolo, and S. A. Keo
Center for Infrared Photodetectors, Jet Propulsion Laboratory, California Institute of
Technology, 4800 Oak Grove Drive, Pasadena, CA 91109 (USA)
8:45
Questions and Discussion
8:50
Low pitch LWIR QWIPs: performance level and image quality
A. Nedelcu et al.
SOFRADIR Paris (France)
9:05
Questions and Discussion
9:10
Two-photon quantum well infrared photodetectors in the THz regime
C. Franke1,2, M. Walther3, and H. Schneider1
1Helmholtz-Zentrum Dresden-Rossendorf (Germany)
2Technische Universität Dresden (Germany)
3Fraunhofer IAF Freiburg (Germany)
9:25
Questions and Discussion
9:30
Superlattice quantum well infrared photodetectors for detection of radiation energies
above 400 meV
L. Guerra 1,2, G. M. Penello2,3, , L. D. Pinto1,2, R. T. Mourão2,3, R. Jakomin2,4, M. P. Pires2,3, M.
H. Degani5, M. Z. Maialle5 and P. L. Souza1,2
1LabSem/CETUC, Pontifícia Universidade Católica, Rio de Janeiro, 22451-900 (Brazil)
2DISSE-Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores,
PUC-Rio, 22451-900 (Brazil)
3Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro, 21945-970
(Brazil)
4Campus de Xerém, Universidade Federal do Rio de Janeiro, Duque de Caxias,25245-390
(Brazil)
5Faculdade de Ciências Aplicadas, Universidade Estadual de Campinas, Limeira-SP, 13484350 (Brazil)
9:45
Questions and Discussion
9:50
Performance Enhancements in High Quantum Efficiency InP Based QWIPs
Y. Arslan, T. Colakoglu, S. Kocaman and C. Besikci
Department of Electrical and Electronics Engineering, Middle East Technical University,
Ankara (Turkey)
10:05
Questions and Discussion
T1-1
T1-2
T1-3
T1-4
T1-5
10:30-11:00 am Coffee Break
11:00-11:50 pm
Session T2: T2SL Material: Novel Characterization Methods
Chair – R. Rehm
MWIR and LWIR photoluminescence from Sb-based epilayers grown on GaAs
substrates by MBE
Q. Wang1, M. Jafari2, L. Hussain2,3, J. Song4, A. Karim1, J. Anderson1, and H. Pettersson2,3
1Acreo Swedish ICT AB, Electrum 236, 16440 Kista (Sweden)
2Department of Mathematics, Physics and Electrical Engineering, Halmstad University, Box
11:00
823, SE-301 18 Halmstad (Sweden)
3Division of Solid State Physics and The Nanometer Structure Consortium (nmC@LU), Lund
University, Box 118, SE-221 00, Lund (Sweden)
4Center for Spintronics Research, Korea Institute of Science and Technology (KIST), Seoul
136-791 (Republic of Korea)
11:15
Questions and Discussion
Photocapacitance study of GaSb: In, As and InAs: Ga, Sb for defect analysis in
11:20
InAs/GaSb Type-II strained layer superlattices
4
T2-1
T2-2
QSIP 2014
11:35
11:40
11:55
12:00
12:15
B. Klein, C. Hains, Z. Taghipour, E. Plis, S. Krishna
Center for High Technology Materials / University of New Mexico (USA)
Questions and Discussion
Dependence of the minority carrier lifetime on background doping in narrow bandgap
antimonide superlattices
L. Höglund, D. Z. Ting, A. Khoshakhlagh, C. Hill, A. Soibel, A. Fisher, S. Keo, S. D. Gunapala
Jet Propulsion Laboratory, California Institute of Technology,4800 Oak Grove Drive,
Pasadena, California, 1109-8099 (USA)
Questions and Discussion
Modeling and Measurements of Optical Properties in InAs/GaSb Superlattice Structures
J. Imbert1, 2, V. Trinite1, S. Derelle2, M. Carras1, R. Haidar2, J. Jaeck2, B. Vinter3, J.-B.
Rodriguez4, P. Christol4
1III-VLab 1 avenue Auguste Fresnel Campus Polytechnique, Palaiseau (France)
2Onera Chemin de la Hunière et des Joncherettes , Palaiseau (France)
3Université Nice Sophia Antipolis CRHEA-CNRS Rue Bernard Grégory, Valbonne (France)
4Institut d’Electronique du Sud Université Montpellier 2 Place Eugène Bataillon, Montpellier
(France)
Questions and Discussion
T2-3
T2-4
12:20-1:30 pm Lunch. Advisory committee meeting.
1:30-2:45 pm
Session T3: T2SL Detectors: Fabrication and Passivation
Chair – U. Perera
Barrier detectors versus HgCdTe photodiodes
P. Martyniuk and A. Rogalski
1:30
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908
Warsaw (Poland)
1:45
Questions and Discussion
Chemical and Physical Passivation of Type II Strained Layer Superlattice devices by
means of thiolated self-assembled monolayers and polymer encapsulates
N. Henry1, N. Baril1, S. Bandara2, K.S. Williams3, D. Knorr3, J. L. Lenhart3, J. W. Andzelm3, M.
Tidrow2, and J.Pellegrino2
1:50
1Corbin Company, Alexandria, Virginia 22314 (USA)
2U. S. Army RDECOM CERDEC NVESD, Ft. Belvoir, Virginia 22060 (USA)
3U.S. Army Research Laboratory MSTB Branch WMRD, Aberdeen Proving Ground, Maryland
21005 (USA)
2:05
Questions and Discussion
Post-etching mesa sidewall composition investigation of InAs/GaSb type-II strained
layer superlattices using XPS characterization
2:10
B.Klein1, K. Artyushkova2, E. Plis1, and S. Krishna1
1Center for High Technology Materials / UNM (USA)
2Department of Chemical and Nuclear Engineering / UNM (USA)
2:25
Questions and Discussion
LW/LWIR InAs/GaSb type-II Strained Layer Superlattice Detectors
E. Plis, S. Myers, D. Ramirez, S. Krishna
2:30
Skinfrared, LLC, Lobo Venture Lab 801, University Blvd., Suite 10 , Albuquerque, NM, 87109
(USA)
2:45
Questions and Discussion
T3-1
T3-2
T3-3
T3-4
2:50-3:30 pm Coffee Break
3:30-4:50 pm
Session T4: QDIPs
Chair – G. Sarusi
InAs/GaAs p-type quantum dot infrared photodetector
A. G. U. Perera1, Y. F. Lao1, S. Wolde1, Y. H. Zhang2, T. M. Wang2, J. O. Kim3, T. SchulerSandy3, Z.-B. Tian3, and S. S. Krishna3
3:30
1Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 (USA)
2Key Laboratory of Artificial Structures and Quantum Control, Department of Physics and
Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China)
5
T4-1
QSIP 2014
3Center
3:45
3:50
4:05
4:10
4:25
4:30
4:45
for High Technology Materials, Department of Electrical and Computer Engineering,
University of New Mexico, Albuquerque, NM 87106 (USA)
Questions and Discussion
Molecular Beam Epitaxy growth and characterization of silicon - doped InAs dot in a
well quantum dot infrared photo detector (DWELL-QDIP)
T. Srinivasan1, P. Mishra1, S. K. Jangir1, R. Raman1, D. V. Sridhara Rao2, D. S. Rawal1, R.
Muralidharan1
1 Solid State Physics laboratory, Lucknow Road, Timarpur, Delhi 110054 (India)
2Defence Metallurgical Research Laboratory, Hyderabad (India)
Questions and Discussion
Quantum dot infrared detectors
David Z. Ting1, Y.-C. Chang2, A. Soibel1, C. J. Hill1, S. A. Keo1, L. Höglund1, S. D. Gunapala1
1 Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA
2 Dept. of Physics, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (USA)
Questions and Discussion
Growth and Investigation of InAsSbP Quantum Dots for Mid-Infrared Applications
V.G. Harutyunyan, K.M. Gambaryan and V.M Aroutiounian
Department of Physics of Semiconductors and Microelectronics, Yerevan State University, 1
A. Manoogian, Yerevan, 0025 (Armenia)
Questions and Discussion
7:00 pm Conference Dinner
6
T4-2
T4-3
T4-4
QSIP 2014
Wednesday, July 2
7:30 am Breakfast
8-30-9:50 am
Session W1: Growth Optimization of T2SL Materials
Chair: S. Gunapala
Hydrogenation for Improved Lifetimes in MWIR Superlattice Detector Materials
K. Hossain1, L. Phinney1, T. Golding1, L. Hoeglund2, and G. Wicks1
8:30
1Amethyst Research Inc, 123 Case Circle Ardmore, OK 73401 (USA)
2Jet Propulsion Laboratory, 4800 Oak Grove Drive, Pasadena, CA 91109 (USA)
8:45
Questions and Discussion
Optimum Growth Window for InAs/GaInSb Superlattice Materials Tailored for Very
Long Wavelength Infrared Detection
8:50
H. J. Haugan / G. J. Brown, K. Mahalingam, and L. Grazulis
Air Force Research Laboratory/Materials and Manufacturing Directorate, Wright-Patterson
Air Force Base, Ohio 45433 (USA)
9:05
Questions and Discussion
Influence of the InAs to GaSb thickness ratio on the radiometric performances of
MWIR InAs/GaSb superlattice pin photodiodes
E. Giard, M. Delmas2, J.-B. Rodriguez2, P. Christol2, I. Ribet-Mohamed1
9:10
1ONERA / Chemin de la Hunière, 91761 Palaiseau (France)
2Institut d’Electronique du Sud / UMR-CNRS 5214- Université Montpellier 2, Place Eugène
Bataillon, 34095 Montpellier (France)
9:25
Questions and Discussion
Optimization of GaSb growth on GaAs using Molecular Beam epitaxy (MBE) for
antimonide based device applications
9:30
P. Mishra, T. Srinivasan, S. Kumari, S. K. Jangir, S. Kumar, R. Raman, A. Pandey, R.
Muralidharan
Solid State Physics laboratory, Lucknow Road, Timarpur, Delhi 110054 (India)
9:45
Questions and Discussion
9:50-10:30 am Coffee Break
10:30-11:50 am
Session W2: Applications of IR Devices
Chair: - (?)
Dynamic Infrared Imaging for Skin Cancer
10 :30
S. Godoy and S. Krishna
Skinfrared LLC2, Albuquerque, NM (USA)
10 :45
Questions and Discussion
Studies on barrier enhanced InAs/GaSb superlattice long wavelength photodetectors
Y. Zhou, J. Chen, Zh. Xu, Q. Xu, F. Wang, J. Xu, Zh.Bai, C. Jin, and Li He
10 :50
Key Laboratory of Infrared Imaging Material and Detectors Shanghai Institute of Technical
Physics, Chinese Academy of Sciences Shanghai 200083 (China)
11 :05
Questions and Discussion
Combined Full-Field Laser Speckle Perfusion Imaging (LSPI) and Thermal Infrared
Imaging to Assess the Functional Revascularization of a Murine Myocutaneous Flap
11 :10
R. M. Clark1, D. A. Ramirez2, S. A. Myers2, S. Krishna2, and T. R. Howdieshell1
1Department of Surgery, University of New Mexico HSC (USA)
2 Skinfrared LLC2, Albuquerque, NM (USA)
11 :25
Questions and Discussion
Flat-band pn-based Barrier Photodetector
11 :30
D. E. Sidor, G. R. Savich, X. Du, and G. W. Wicks
The Institute of Optics, University of Rochester, Rochester, New York 14627 (USA)
11 :45
Questions and Discussion
11:50 – 1 :00 pm Boxed Lunch
1:00-6 :00 pm Excursion
6 :00-8 :00 pm Dinner on your own
7
W1-1
W1-2
W1-3
W1-4
W2-1
W2-2
W2-3
W2-4
QSIP 2014
Thursday, July 3
7:30 am Breakfast
8-30-9:30 am
Session TH1: Advances in II-VI Materials
Chair – (?)
8:30
8:45
8:50
9:05
9:10
9:25
II-VI Materials Based Intersubband Infrared Detectors
A. P. Ravikumar1, G. Chen2, T. A. Garcia2, J. D. Jesus2, A. Shen2, M. C. Tamargo2, and C.
F. Gmachl1
1Princeton University, Princeton, NJ (USA)
2The City College of New York of CUNY, New York, NY (USA)
Questions and Discussion
Diffusion length estimator from HgCdTe planar photodiode quantum efficiency
measurements
C.Cervera1, O.Gravrand 1, O.Boulade2, V.Moreau2
1CEA, LETI, MINATEC F38054 Grenoble (France)
2 CEA, IRFU, Sap F91191 Saclay (France)
Questions and Discussion
Electrical Characterization of MBE-Grown HgCdTe Photodetectors by TemperatureDependent Current-Voltage Measurements and Deep Level Transient Spectroscopy
T. Colakoglu1, Y. Arslan1, F. Oguz2 and C. Besikci1,2
1 Department of Electrical and Electronics Engineering, Middle East Technical University,
Ankara (Turkey)
2 Department of Micro and Nanotechnology, Middle East Technical University, Ankara
(Turkey)
Questions and Discussion
TH1-1
TH1-2
TH1-3
9:30-10:30 am Coffee Break
10-30-12:10 pm
Session TH2: New Directions in IR Sensing: Novel Concepts and Applications
Chair: A. Rogalski
10:30
10:45
10:50
11:05
11:10
11:25
11:30
11:45
11:50
Electromagnetic Modeling and Resonant detectors and Arrays
K. K. Choi, J. Sun, E. A. DeCuir, K. A. Olver, P. Wijewarnasuriya
U.S. Army Research Laboratory, Adelphi, MD (USA)
Questions and Discussion
Investigation of Extended SWIR InP/InGaAs Focal Plane Arrays
Y. Arslan1, B. Ugur1, O. Temel2, T. Colakoglu1 and C. Besikci1,2
1 Department of Electrical and Electronics Engineering, Middle East Technical University,
Ankara (Turkey)
2 Department of Micro and Nanotechnology, Middle East Technical University, Ankara
(Turkey)
Questions and Discussion
Extended Short-wavelength Infrared Barrier Photodetectors for Advanced
Spectroscopic Sensing Systems
M. Jain1, G. W. Wicks1, A. P. Craig2, A. R. J. Marshall2, T.D. Golding1, K. McEwan3 and C.
Howle3
1Amethyst Research Ltd. Unit 8, Kelvin Campus, West of Scotland Science Park, Glasgow,
G20 0SP (UK)
2Physics Department, Lancaster University, Lancaster LA1 4YB (UK)
3Defence Science and Technology Laboratory, Porton Down, Salisbury, Wiltshire, SP4 0JQ
(UK)
Questions and Discussion
Extended Wavelength SWIR Detectors with Reduced Dark Current
Noam Cohen, IAI (Israel)
Questions and Discussion
GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and
8
TH2-1
TH2-2
TH2-3
TH2-4
TH2-5
QSIP 2014
12:05
multiplication structure using a hetero-lattice interface
A.R. J. Marshall1, A. P. Craig1, C. J. Reyner1, and D. L. Huffaker2,3
1Physics department, Lancaster University, Lancaster LA1 4YB, United Kingdom
2Department of Electrical Engineering, UCLA, Los Angeles, California 90095, USA
3California NanoSystems Institute, UCLA, Los Angeles, California 90095, USA
Questions and Discussion
12:10-12:30 pm Conference closing, Final remarks by S. Krishna
12:30-1:30 pm Lunch
1-30 – 6:00 pm Tour to Center for High Technology Materials (CHTM), Albuquerque
9