Background Statement for
SEMI Draft Document 4635B
Revision to SEMI M69-0307
PRACTICE FOR DETERMINING WAFER NEAR-EDGE GEOMETRY
USING ROLL-OFF AMOUNT, ROA
Notice: This background statement is not part of the balloted item. It is provided solely to assist the
recipient in reaching an informed decision based on the rationale of the activity that preceded the creation
of this document.
Notice: Recipients of this document are invited to submit, with their comments, notification of any relevant
patented technology or copyrighted items of which they are aware and to provide supporting
documentation. In this context, “patented technology” is defined as technology for which a patent has
issued or has been applied for. In the latter case, only publicly available information on the contents of the
patent application is to be provided.
This document 4635B is a second revision of M69-0307 which is published as the SEMI
Preliminary standard in March 2007. The previous revision 4635A balloted in cycle 1, 2009 was
reviewed by the International Advanced Wafer Geometry Task Force (AWG TF) and was failed
by the Silicon Wafer Committee during SEMICON West in San Francisco July, 2009.
This document 4635B was revised through the preliminary review held at the International AWG
TF at NA Spring Standards Meetings for the ballot results of 4635A. The main adjusting point is
on the measuring equipment:
old version: 7.1 Measuring Equipment — Suitable for acquiring the height data array
over the entire FQA, (skip the rest)
revised version: 7.1 Measuring Equipment — Suitable for acquiring the height data array
of the near-edge region, (skip the rest)
This document 4635B will be balloted in cycle 6, 2009 and reviewed by the International AWG
TF and adjudicated by the Silicon Wafer Committee during SEMICON JAPAN in Makuhari
December, 2009.
IP Issues
This document includes information, which might be material to the patented technologies.
On December 4, 2008, during the Japan Standards meetings at SEMICON Japan 2008, the Japan
Silicon Wafer committee, per the recommendation of the International Advanced Wafer
Geometry Task Force, made the decision to find these patents material to Draft Document
#4635B and its inclusion is justified on technical grounds per SEMI Standards Regulations (§15).
(1)Makoto Kobayashi, Kazuhito Matsukawa, Hidekazu Yamamoto, Shinroku
Maejima;"WAFER SHAPE EVALUATING METHOD AND DEVICE PRODUCING
METHOD, WAFER AND WAFER SELECTING METHOD"; US 6828163(12/07/2004)
(2)Makoto Kobayashi, Syuichi Kobayashi;"METHOD FOR EVALUATING WAFER
CONFIGURATION, WAFER, AND WAFER SORTING METHOD"; US 6975960(12/13/2005)
Semiconductor Equipment and Materials International
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SEMI Draft Document 4635B
Revision to SEMI M69-0307
PRACTICE FOR DETERMINING WAFER NEAR-EDGE GEOMETRY
USING ROLL-OFF AMOUNT, ROA
This standard was technically approved by the global Silicon Wafer Committee. This edition was approved
for publication by the global Audits and Reviews Subcommittee on January 18, 2007. It was available at
www.semi.org in February 2007 and on CD-ROM in March 2007.
1 Purpose
1.1 Wafer near-edge geometry can significantly affect the yield of semiconductor device processing.
1.2 Knowledge of near-edge geometrical properties can help the producer and consumer determine if the
dimensional characteristics of a specimen wafer satisfy given geometrical requirements.
1.3 This practice is suitable for quantifying near-edge geometry of wafers used in semiconductor device processing.
1.4 Consideration should be given to the use of this or other proposed edge geometry metrics as a process control
tool rather than a material exchange specification.
2 Scope
2.1 This practice covers calculation of the near-edge geometry metric roll-off amount (ROA) based on Kimura, et
al. 1 2
F,
F
2.2 Calculation of ROA is based on height data array that is representative of a wafer profile of the near-edge
associated with one or more of the front surface, the back surface, or thickness variation.
2.3 This practice covers selection of the point at which the ROA is determined and the reference line to be utilized
for this determination.
2.4 This practice is applicable to notched 200 and 300 mm diameter wafers having dimensions in accordance with
wafer categories 1.9.2, 1.9.3, 1.15, and 1.15.1 of SEMI M1.
2.5 This practice has been shown to be suitable for quantifying near-edge geometry to improve CMP performance
at wafer edge. 3 , 4 ROA values in that study were measured using an edge-referenced coordinate system. On the
other hand, measurement systems for high volume production geometry (e.g., whole-wafer flatness) use a centerreferenced coordinate system.
F
F
F
F
2.6 This practice allows for the use of either an edge-referenced or a center-referenced coordinate system.
2.7 There are other metrics, such as .those in SEMI M67, SEMI M68 and SEMI M70, for near-edge geometrical
properties, some of which quantify more specific aspects. These are outside the scope of this practice.
2.8 This practice does not cover acquisition of the height data array. However, it gives the required characteristics
of the height data array.
1 M. Kimura, Y. Saito, H. Hiroshi, and K. Yakushiji, “A New Method for the Precise Measurement of Wafer Roll off of Silicon Polished Wafer”
Jpn. J. Appl. Phys. 38, 38 (1999).
2 The calculation of this practice might be the subject of the following patents:

JP patent 3838341 and its priority application U.S. patent 6975960 owned by Shin-Etsu Handotai Co., Ltd.,

JP patent 3924784 and its priority application U.S. patent 6828163 owned by Shin-Etsu Handotai Co., Ltd. and Mitsubishi Denki
Kabushiki Kaisha(Renesas Technology Corp. at the present day).
3 Japan Electronics and Information Technology Industries Association (JEITA) Technical Report, “The Impact of Edge Roll-off on CMP
performance” JEITA EMR-3001 (2004).
4 The development of edge roll off measurement method for silicon wafers by JEITA Silicon Technologies Committee is hereby acknowledged.
This method, “Edge Roll-Off Measurement Method for Silicon Wafers,” is published as a standard as JEITA EM-3510.
This is a draft document of the SEMI International Standards program. No material on this page is to be construed as an offi cial or adopted standard. Permission is granted to
reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other
reproduction and/or distribution without the prior written consent of SEMI is prohibited.
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2.9 The determination of the sign of ROA values calculated by this practice is different from other SEMI standards.
This practice adopts the sign convention that Kimura, et al.1 proposed because it is in use in the industry.
NOTICE: This standard does not purport to address safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish appropriate safety and health practices and determine the
applicability of regulatory or other limitations prior to use.
3 Limitations
3.1 Deficiencies of data such as inadequate spatial resolution, mis-positioning, noise, etc. in the height data array
used to calculate the ROA may lead to erroneous results.
3.2 The selection of the reference segment, the ROA measurement point, the measuring surface, and the type of the
reference line is to be decided between the relevant parties. To make these conditions clear, a method for reporting
ROA is provided in ¶ 10.1.8.
3.3 Since the wafer surface height changes rapidly along the radius in the near-edge region and the diameter
tolerance of 200 or 300 mm wafers is ±0.2 mm (see SEMI M1, Table 9), the ROA values determined with edgereferenced and center referenced coordinates can be different, even without measurement errors.
3.4 Due to the existence of notch, the edge reference measurement is not applicable to the notch area.
4 Referenced Standards and Documents
4.1 SEMI Standards
SEMI M1 — Specifications for Polished Monocrystalline Silicon Wafers
SEMI M20 — Practice for Establishing a Wafer Coordinate System
SEMI M59 — Terminology for Silicon Technology
SEMI M67 — Practice for Determining Wafer Near-Edge Geometry from a Measured Thickness Data Array Using
the ESFQR and ESFQD Metrics
SEMI M68 — Practice for Determining Wafer Near-Edge Geometry from a Measured Height Data Array Using a
Curvature Metric, ZDD
SEMI M70 — Practice for Determining Wafer-Near-Edge Geometry Using Partial Wafer Site Flatness
SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers
by Automated Non-Contact Scanning
NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.
5 Terminology
5.1 General terms, acronyms, and symbols used in silicon wafer technology are listed and defined in SEMI M59.
6 Summary of Practice
6.1 Measurement positions and measurement coordinate system are selected.
6.2 The ERO measurement point and the reference segments end points are selected and reported.
6.3 The type of reference line used is selected and reported.
6.4 Height data arrays of one or more of the front surface, the back surface, or thickness are acquired along the
radial direction at the measurement positions.
6.5 The ROA is calculated for each measurement position.
6.6 ROA is reported for each measurement position and surface(s) analyzed.
This is a draft document of the SEMI International Standards program. No material on this page is to be construed as an offi cial or adopted standard. Permission is granted to
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6.7 Statistical quantities for ROA, as agreed upon by the parties to the test are calculated and reported for each
wafer.
7 Apparatus
7.1 Measuring Equipment — Suitable for acquiring the height data array of the near-edge region except for
instrument-dependent exclusion areas, and transferring it to the calculation equipment.
NOTE 1: A test method for acquiring the height data array is outside the scope of this practice.
7.1.1 The equipment shall perform all necessary calculations and corrections needed to produce the height data
array internally and automatically, including instrument-dependent exclusion areas. The equipment shall be
equipped with a means of detecting and either deleting or identifying invalid data (over-range signal).
7.1.2 Height resolution shall be 10 nm or smaller.
7.1.3 Height data array data point spacing shall be 0.1 mm or less.
7.1.4 The acquisition spatial resolution shall be appropriate for the height data array data point spacing and shall be
agreed upon between the parties to the test.
7.2 Calculation Software —Software shall perform the calculations of this practice and provide outputs of the
results, including statistical parameters as agreed upon by the parties to the test.
8 Procedure
8.1 Define recipe for calculation:
8.1.1 Select edge-referenced or center-referenced coordinates (see ¶ 33 ).
X
X
8.1.2 Select the measurement position(s).
NOTE 2: Recommended positions are the following eight angular ones, 0º, 45º, 90º, 135º, 180º, 225º, 275º, and 315º as defined in
the R- coordinate system of SEMI M20 (see Figure 1). This practice does not define the measuring method for the notch
portion of the wafer and its neighborhood.
Y
90°
135°
45°
180°
0°
225°
X
315°
275°
270°
Figure 1
Recommended Measurement Positions on the Front Surface of the Specimen Wafer
8.1.3 Select the reference line as a straight line (L-ROA) or a third order polynomial (cubic) curve (P-ROA).
8.1.4 Select the locations of the measurement point and reference segment end points. Designate these as q0, q1,
and q2, respectively, (q2 > q1) when using edge-referenced coordinates or r0, r1, and r2, respectively (r1 > r2) –
when using center-referenced coordinates (see figure 2).
This is a draft document of the SEMI International Standards program. No material on this page is to be construed as an offi cial or adopted standard. Permission is granted to
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q1 = 3
q2 = 6 q [mm]
ROA(1)
z
ROA(149)
Radial profile
Linear reference line
r [mm]
r0 = 149
r1 = 147
r2 = 144
NOTE: The distance from the wafer center is given by r and the distance from the edge is given by q. The z axis is the
coordinate in the direction perpendicular to the plane of the wafer. The radial profile is calculated from the height data
array
Figure 2
Recommended Measurement Positions on the Front Surface of the Specimen Wafer
8.1.4.1 The default location of the reference segment for L-ROA is between q1 = 3 mm and q2 = 6 mm for the edge
referenced case, or between r1 = (R–3) mm and r2 = (R–6) mm for the center referenced case, where R is the nominal
wafer radius. The default edge roll off measurement point for L-ROA is taken as q0 = 1 mm for the edge referenced
case, or r0 = (R–1) mm for the center referenced case. See Appendix 1 for a discussion of the reasons why these
default values are selected for the reference segment end points.
8.1.4.2 The default location of the reference segment for P-ROA is between q1 = 5 mm and q2 = 20 mm for the edge
referenced case or between r1 = (R–5) mm and r2 = (R–20) mm for the center referenced case. The default edge roll
off measurement point for P-ROA is r0 = 1 mm for the edge referenced case or r0 = (R–1) mm for the center
referenced case. See Appendix 1 for a discussion of the reasons why these default values are selected for the
reference segment end points.
8.1.5 Select the surface or surfaces to obtain the height data array as one or more of the following: front surface,
back surface, or thickness.
8.1.6 Determine statistics to be reported for each wafer. As a minimum, these shall include maximum, minimum,
average, and standard deviation.
8.2 Acquire the height data array in accordance with a method agreed upon by all parties to the practice.
9 Calculations
NOTE 3: The following calculations are performed automatically within the equipment. An outline of the calculation is
provided here to indicate the nature of the procedure.
9.1 Calculate the radial profile of the appropriate surfaces and/or thickness variation at each selected measurement
position.
NOTE 4: Suitable averaging and/or interpolation of the height data array may be used to calculate a profile representative of the
wafer edge at the measurement position.
9.2 Determine the reference line for each calculated radial profile using data within the reference segment (see
¶¶8.1.4 through 8.1.4.2 and Figure 3) as:
9.2.1 The least square line in case L-ROA is selected, or
9.2.2 The least square cubic order polynomial curve in case P-ROA is selected.
This is a draft document of the SEMI International Standards program. No material on this page is to be construed as an offi cial or adopted standard. Permission is granted to
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Height data
Height data
P-ROA
L-ROA
Calculated radial
Height
profile data array
Linear reference line
q0 =1
q1 =3
q2 =6
Calculated
Height
dataradial
array
profile
Cubic polynomial
reference line
q0=1 q1 =5
q2 =20
Distance form the Edge (mm)
Distance form the Edge (mm)
Figure 3
L-ROA Measurement Method (left) and P-ROA Measurement Method (right)
9.3 Calculate the ROA as the distance between the calculated radial profile and the reference line at the ERO
measurement point (see Figure 2).
9.3.1 If the radial profile is calculated from a height data array of either the front or back surface, take the sign of
the ROA as positive in the direction towards the median plane of the wafer (see Figure 4 (b)) or negative in the
direction away from the median plane of the wafer (see Figure 4 (a)).
9.3.2 If the radial profile is calculated from a height data array of thickness, take as positive when the thickness
decreases going toward the edge and negative when the thickness increases going toward the edge (see Figures 4 (c)
and (d)).
Front Surface
Front Surface
Positive ROA Reference line of front surface
Reference line of front surface
Negative ROA
Median plane
Median plane
Positive ROA
Negative ROA
Reference line of back surface
Reference line of back surface
Back Surface
Back Surface
r0 / q 0
r1 / q 1
r2 / q 2
r0 / q 0
r1 / q 1
r2 / q 2
(a) Examples of Negative ROA for Front and Back Surface (b) Examples of Positive ROA for Front and Back Surface
Thickness Profile
Thickness Profile
Reference line
Reference line
Negative ROA
r0 / q 0
r1 / q 1
Positive ROA
r2 / q 2
r0 / q 0
(c) Example of Negative ROA for Thickness Profile
r1 / q 1
r2 / q 2
(d) Example of Positive ROA for Thickness Profile
Figure 4
Schematic Drawing for the Determination of the Sign of the ROA
9.4 Record the calculated ROA.
9.5 Calculate statistics (see ¶ 8.1.6 ) for each wafer for each surface (front surface, back surface, and thickness) for
which ROA was calculated.
X
X
9.6 For multi-measurement tests, calculate the standard deviations of each set of wafer measurements and such
other statistical parameters as agreed to by the parties to the test.
This is a draft document of the SEMI International Standards program. No material on this page is to be construed as an offi cial or adopted standard. Permission is granted to
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10 Report
10.1 Report the following information:
10.1.1 Date, time of test,
10.1.2 Identification of operator,
10.1.3 Location (laboratory) of test,
10.1.4 Identification of measuring instruments, including measuring equipment and calculation equipment
(identification of make, model, software version, etc.),
10.1.5 Acquisition spatial resolution and data point spacing,
10.1.6 Lot identification and wafer identification,
10.1.7 Description of sampling plans, if any, and
10.1.8 Measurement conditions, as follows:
10.1.8.1 Surface measured (front surface, back surface, or thickness)
10.1.8.2 Type of the reference line (a linear reference line or a polynomial cubic reference curve),
10.1.8.3 Origin of coordinate (center-reference or edge reference),
10.1.8.4 Edge roll off measurement point,
10.1.8.5 The reference segment end points, and
10.1.9 ROA data and its angular position of the measurement (in degrees, in accordance with the R- coordinate
system of SEMI M20) for each wafer measured for each position.
10.2 In addition, report all statistical quantities (e.g., average, range, standard deviation, other) as agreed to by the
parties to the test for each wafer measured (see ¶ 8.1.6 ).
X
X
NOTE 5: In reporting statistical properties of measurements on a wafer surface, the name of the statistical quantity should be
substituted for the angular position.
10.3 For multi-measurement tests, also report the standard deviation of each set of wafer measurements and such
other statistical parameters as have been agreed to by the parties to the test.
11 Keywords
11.1 ERO; ROA; near-edge geometry; semiconductor; silicon; wafers
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APPENDIX 1
REFERENCE SEGMENT LOCATIONS
NOTICE: The material in this appendix is an official part of SEMI M69 and was approved by full letter ballot
procedures on January 22, 2007.
A1-1 Edge roll off is the displacement of un-chucked wafer surface profile in the edge vicinity from a reference line
(virtual ideal surface) and ROA (roll off amount) is defined as the vertical (z direction) distance from the reference
line to the surface at a specific point on the radius. The reference line represents a virtual ideal straight line or curve
without the edge roll off and is determined from the surface profile of the edge vicinity and inner (toward the wafer
center) part of the wafer in order to avoid any influence of the edge roll off. If sori, bow, and warp (hereinafter
called global bending) do not exist, the reference line is determined by extrapolating a line from the inner surface
profile. However, in case that global bending exists, it is necessary to eliminate its effect.
A1-2 In general, the global bending of the wafer surface has a relatively small spatial frequency compared to the
edge roll off so that this practice includes a choice between two kinds of reference lines. One is a reference line
(linear reference) by fitting a straight line to a short segment that is hardly biased by the global bending, and the
other is a reference line (curved reference) by fitting a third order polynomial line to the wafer global bending. As
for the short segment, the 3 mm segment that is from 3–6 mm is employed according to the literature of Kimura
et al. 1 As for the third order polynomial line, the 15 mm segment that is from 5–20 mm is employed as a
recommended segment based on the following reason.
X
X
A1-2.1 As shown in Figure A1-1, assuming that the edge roll off is independent of the global bending, the amount
of the edge roll off should not be changed by the existence of the global bending. On the other hand, the global
bending does not exist in the thickness profile so that straight line can be fitted to it as a reference line. From these
points of view, if the curved reference line reflects the global bending well, the sum of the front surface ROA and
back surface ROA calculated using each reference line must be exactly the same as thickness ROA calculated
separately using the linear reference line. If it is not, the global bending influences the front surface ROA and back
surface ROA, and it means that roll off is not correctly evaluated.
A1-2.2 Then, measuring real wafers (JEITA obtained 9 wafers in 2003), the thickness ROA is compared to the sum
of the front surface ROA and the back surface ROA calculated using various reference segments. For all 9 wafers, 8
points along every 45 orientation on each wafers were measured. As for the front surface ROA and the back
surface ROA, the curve reference line ROA is calculated using 8 kinds of curved reference segment, [3,6], [5,10],
[5,20], [5,25], [10, 15], [10.20], [10, 25]. As for thickness ROA, it is calculated by the straight line of the
recommended segment. Figure A1-2 is 8 graphs in which the sum of the front surface ROA and the back surface
ROA is plotted against the thickness ROA for each reference segment. To evaluate the ROA calculation error
caused by global bending, the mean square of the difference between the thickness ROA and sum of the front
surface ROA and the back surface ROA is calculated by the following equation:
Calculated error 

[ROA t  (ROA f  ROA b )] 2
N
(A1-1)
where ROAt, ROAf and ROAb are the thickness ROA, the front surface ROA and the back surface ROA respectively.
Table A1-1 shows the calculated results and that the minimum error was obtained in 5–20 mm segment. It is
concluded from this that the 15 mm segment from 5–20 mm is the most appropriate one. Of course, these results
were tested for limited wafers and it is quite possible to choose another segment by agreement among users, since,
for example, there is another proposal by Riedel et al. 5
F
F
5 F. Riedel, H. -A. Gerber, and P. Wagner, “Metrics for Wafer Edge Roll-Off Measurement” SEMI Standards Silicon Wafer Workshop
(SEMICON Europa 2005, Munich, Germany, April 14, 2005).
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Actual shape of a wafer
ERO
Component of ERO
Component of global bending
Figure A1-1
Components of ERO and global bending
Table A1-1 Calculated Results Using Equation (A1-1) for Each Set of
Reference Segments for Front and Back Surface P-ROA
Reference Segment
Calculated Error
3–6 mm
0.378
5–10 mm
0.201
5–15mm
0.049
5–20 mm
0.029
5–25 mm
0.056
10–15 mm
0.542
10–20 mm
0.127
10–25 mm
0.201
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Front Surface P-ROA(1.0) +
1
0.75
0.5
0.25
0
-0.25
-0.25
0
0.25
0.5
0.75
1
Thickness L-ROA(1.0) [ 3, 6] (μm)
Front
BackSurface
SurfaceP-ROA(1.0)
P-ROA(1.0)+(μ
Back Surface P-ROA(1.0)
(m)
m)
Front Surface P-ROA(1.0) +
Back Surface P-ROA(1.0) (μm)
Reference Segment : [ 3, 6 ]
1.25
1.25
Reference Segment : [ 5, 10 ]
1.25
1
0.75
0.5
0.25
0
-0.25
-0.25
1.25
1
0.75
0.5
0.25
0
-0.25
-0.25
0
0.25
0.5
0.75
1
Thickness L-ROA(1.0) [ 3, 6] (μm)
1.25
Reference Segment : [ 5, 20 ]
1.25
1
0.75
0.5
0.25
0
-0.25
-0.25
0.75
0.5
0.25
0
-0.25
0
0.25
0.5
0.75
1
Thickness L-ROA(1.0) [ 3, 6] (μm)
1.25
1
0.75
0.5
0.25
0
-0.25
1.25
-0.25
1
0.75
0.5
0.25
0
-0.25
-0.25
0
0.25
0.5
0.75
1
Thickness L-ROA(1.0) [ 3, 6] (μm)
0
0.25
0.5
0.75
1
Thickness L-ROA(1.0) [ 3, 6] (μm)
1.25
(f) Reference Segment 10–15 mm
Reference Segment : [ 10, 20 ]
Front Surface P-ROA(1.0) +
Back Surface P-ROA(1.0) (μm)
Front Surface P-ROA(1.0) +
Back Surface P-ROA(1.0) (μm)
(e) Reference Segment 5–25 mm
1.25
1.25
Reference Segment : [ 10, 15 ]
1
-0.25
0
0.25
0.5
0.75
1
Thickness L-ROA(1.0) [ 3, 6] (μm)
(d) Reference Segment 5–20 mm
Reference Segment : [ 5, 25 ]
Front Surface P-ROA(1.0) +
Back Surface P-ROA(1.0) (μm)
Front Surface P-ROA(1.0) +
Back Surface P-ROA(1.0) (μm)
(c) Reference Segment 5–15 mm
1.25
1.25
(b) Reference Segment 5–10 mm
Reference Segment : [ 5, 15 ]
Front Surface P-ROA(1.0) +
Back Surface P-ROA(1.0) (μm)
Front Surface P-ROA(1.0) +
Back Surface P-ROA(1.0) (μm)
(a) Reference Segment 3–6 mm
0
0.25
0.5
0.75
1
Thickness L-ROA(1.0) [ 3, 6] (μm)
1.25
(g) Reference Segment 10–20 mm
1.25
Reference Segment : [ 10, 25 ]
1
0.75
0.5
0.25
0
-0.25
-0.25
0
0.25
0.5
0.75
1
Thickness L-ROA(1.0) [ 3, 6] (μm)
1.25
(h) Reference Segment 10–25 mm
Figure A1-2
Comparison of the Thickness L-ROA with reference segment [3,6] with the sum of the Front Surface P-ROA
and the Back Surface P-ROA for Each Reference Segment.
Note: The description (*) and [*, *] in each axis title are indicated as the measurement point and reference
segment, respectively.
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