4035.High-voltage-charger-solution
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High voltage charger solution Li, Wang: wang-li@ti.com MGambrill, Michael: mgambrill@ti.com Liang, Roger: r-liang@ti.com 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure Abstract • A typical bq24610 Application • A high voltage charger block diagram • Test results • More higher input voltage solution • SMBus high voltage charger solution 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure A typical bq24610 Application 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure 3 A Typical standalone charger application circuit Q1 Adapter R16 2Ω C11 VCC 0.1µF ACN ACP bq24610 ACDRV VREF BATDRV C12 CE 1µF REGN ISET1 C1 2.2µF R9 9.31kΩ R3 100kΩ R5 100kΩ R7 100kΩ ISET2 Pack Thermistor R10 430kΩ SYSTEM LOAD RAC: 10m Q2 10 Power Source Q3 Selector C7 0.1uF C5:1µF BTST C4 10uF Q4 ACSET HIDRV TS R4 95.3kΩ R6 22.1kΩ R8 57.6kΩ C17 0.22µF TTC STAT1 R12:10kΩ STAT2 R13:10kΩ PG SRP SRN RSR 10m Q5 C7 10µF LODRV GND R11:10kΩ bq24610: 600kHz, Li-Ion 4x4mm QFN-24 L: 6.8µH PH Adapter C3 10µF C2 10µF C10 0.1µF VFB Typical 1-6 Li-Ion Cells, VIN max: 28V 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure Battery Pack C8 10µF R1 953kΩ C9 100pF R2 105kΩ Optional section divider or presentation title High slide voltage charger block diagram 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure 5 8-cell Li-ion battery charger •Basic requirements: Output: if 4.2V/cell battery, the output voltage setting needs 4.2Vx8=33.6V. Input: Vin > 33.6V+few volt hysteresis A typical bq24610/30 application circuit can not accept the input voltage higher than 32V (Input OVP setting). 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure Modified Charger Block Diagram The charger circuit have to do several modifications. The block diagram of HPA603 EVM: DC Input Vcc Bias Supply TPS54060 35~57V 8~14V Vcc ACN ACP CE ACDRV CE VCC Pre-charge Deeply discharged Battery BATDRV BTST setting REGN VREF Vcc BTST ISET1 ISET2 Pack Thermistor ACSET HIDRV PH TS TTC Half Bridge Gate Drive UCC27201 LODRV GND Vcc Q1 STAT1 Q2 Buffer LM358 bq24610/30 VFB TI Information – Selective Disclosure C VREF Rs SRP SRN 2010 Dallas BMS Deep Dive Battery Pack Rsns Current Sense INA169 STAT2 PG L 2~3V Clamp VCC bias supply solution Function block: Vcc Bias supply It powers the charger IC-bq24610/30, external half bridge gate driver, current sense circuit and OMAMP buffer. And it is also used for charging up a deeply discharged battery. A switching Vcc bias power supply needs: • Operating from the maximum input voltage • An 8-14 V output voltage: It is set by the external half bridge gate driver requirement • At least 200mA: It is derived from the sum of the charging current for deeply discharged battery and the whole board current consumption. For 60V input, the TPS54060 is selected to meet these three requirements. 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure Modified Charger Block Diagram Half bridge gate drive solution DC Input Vcc Bias Supply TPS54060 35~57V 8~14V Vcc ACN ACP CE ACDRV CE VCC Pre-charge Deeply discharged Battery BATDRV BTST setting REGN VREF Vcc BTST ISET1 HIDRV ISET2 Pack Thermistor ACSET PH TS TTC Half Bridge Gate Drive UCC27201 LODRV GND Vcc Q1 STAT1 Q2 Buffer LM358 bq24610/30 VFB TI Information – Selective Disclosure C VREF Rs SRP SRN 2010 Dallas BMS Deep Dive Battery Pack Rsns Current Sense INA169 STAT2 PG L 2~3V Clamp Half bridge gate drive solution Function block: Half Bridge Gate Drive It receives the charger IC HIDRV and LODRV signal and drive the buck FET Q5 and Q6. The half bridge gate drive needs: • 20% input voltage margin • Have two Complementary inputs to match HIDRV and LODRV output of bq24610. • Input logic high threshold need lower than 3V match the voltage level of bq24610/30’s HIDRV and LODRV output. • Reserve several resistors, caps and diode to adjust turn-on&off speed and dead time For 60V input, the UCC27201 is selected to meet these three requirements. bq24610 R13 D3 HIDRV PH LODRV PGND 2010 Dallas BMS Deep Dive Vcc HI VDD HB C21 UCC UCC HO 27201 27201 HS C22 LI VSS LO R14 D4 TI Information – Selective Disclosure Cin R25 Q1 Q2 R26 Modified Charger Block Diagram Current sense solution DC Input Vcc Bias Supply TPS54060 35~57V 8~14V Vcc ACN ACP CE ACDRV CE VCC Pre-charge Deeply discharged Battery BATDRV BTST setting REGN VREF Vcc BTST ISET1 HIDRV ISET2 Pack Thermistor ACSET PH TS TTC Half Bridge Gate Drive UCC27201 LODRV GND Vcc Q1 STAT1 Q2 Buffer LM358 bq24610/30 VFB TI Information – Selective Disclosure C VREF Rs SRP SRN 2010 Dallas BMS Deep Dive Battery Pack Rsns Current Sense INA169 STAT2 PG L 2~3V Clamp Current sense solution Function block: Current sense It is a high voltage bus current sensor or a current mirror circuit. It needs • Set 1:1 ratio between Rsns Voltage and Rs voltage. For battery voltage is upto 60V, the INA169 is selected to meet that requirement. Rsns Current sense Rs (R6) 2010 Dallas BMS Deep Dive 1k 1k TI Information – Selective Disclosure Modified Charger Block Diagram buffer solution DC Input Vcc Bias Supply TPS54060 35~57V 8~14V Vcc ACN ACP CE ACDRV CE VCC Pre-charge Deeply discharged Battery BATDRV BTST setting REGN VREF Vcc BTST ISET1 HIDRV ISET2 Pack Thermistor ACSET PH TS TTC Half Bridge Gate Drive UCC27201 LODRV GND Vcc Q1 STAT1 Q2 Buffer LM358 bq24610/30 VFB TI Information – Selective Disclosure C VREF Rs SRP SRN 2010 Dallas BMS Deep Dive Battery Pack Rsns Current Sense INA169 STAT2 PG L 2~3V Clamp Current sense buffer solution Function block: Buffer The SRP/SRN pin of charge IC has few milliampere sink current. The current sense output may not have enough current capability. The buffer circuit needs: • Keep the output voltage on SRP/SRN pin is same as Rs voltage • Provides enough current (8mA) to drive SRP/SRN pin. The LM358 is selected to meet these two requirements. U1 bq24610 L Buffer U5:LM358 Rs (R6) SRP SRN 2010 Dallas BMS Deep Dive R3 TI Information – Selective Disclosure Rsns Current sense Modified Charger Block Diagram 2~3V clamp circuit solution DC Input Vcc Bias Supply TPS54060 35~57V 8~14V Vcc ACN ACP CE ACDRV CE VCC Pre-charge Deeply discharged Battery BATDRV BTST setting REGN VREF Vcc BTST ISET1 HIDRV ISET2 Pack Thermistor ACSET PH TS TTC Half Bridge Gate Drive UCC27201 LODRV GND Vcc Q1 STAT1 Q2 Buffer LM358 bq24610/30 VFB TI Information – Selective Disclosure C VREF Rs SRP SRN 2010 Dallas BMS Deep Dive Battery Pack Rsns Current Sense INA169 STAT2 PG L 2~3V Clamp 2~3V clamp circuit solution Function block: 2~3v Clamp circuit If the SRP/SRN pin voltage is lower than 2V, the IC runs at a short protection mode. The low side MOSFET is held off at that mode. The clamp circuit needs: • Voltage is between 2~3V. • Can absorb the Rs current • Can support SRN pin sink current (8mA) A simple 2~3V clamp circuit can be created from the bq24610’s 3.3V VREF. L Rsns bq24610 Rs (R6) Current sense SRN VREF 2010 Dallas BMS Deep Dive R27 VREF C30 TI Information – Selective Disclosure Modified Charger Block Diagram BTST setting DC Input Vcc Bias Supply TPS54060 35~57V 8~14V Vcc ACN ACP CE ACDRV CE VCC Pre-charge Deeply discharged Battery BATDRV BTST setting REGN VREF Vcc BTST ISET1 HIDRV ISET2 Pack Thermistor ACSET PH TS TTC Half Bridge Gate Drive UCC27201 LODRV GND Vcc Q1 STAT1 Q2 Buffer LM358 bq24610/30 VFB TI Information – Selective Disclosure C VREF Rs SRP SRN 2010 Dallas BMS Deep Dive Battery Pack Rsns Current Sense INA169 STAT2 PG L 2~3V Clamp BTST setting Function block: BTST setting To isolate PH, HIDRV and BTST pin. The PH pin is connected to ground. BTST voltage needs: • Higher than 3V to keep correct gate logic. • Lower than 4V to keep LODRV send refresh pulse every switching cycle. External half bridge gate will use that LODRV refresh pulse to charge its bootstrap cap. A simply resistor divider from 6V REGN can set the BTST voltage easily. bq24610 R22 REGN BTST R21 2010 Dallas BMS Deep Dive C16 TI Information – Selective Disclosure Modified Charger Block Diagram BTST setting DC Input Vcc Bias Supply TPS54060 35~57V 8~14V Vcc ACN ACP CE ACDRV CE VCC Pre-charge Deeply discharged Battery BATDRV BTST setting REGN VREF Vcc BTST ISET1 HIDRV ISET2 Pack Thermistor ACSET PH TS TTC Half Bridge Gate Drive UCC27201 LODRV GND Vcc Q1 STAT1 Q2 Buffer LM358 bq24610/30 VFB TI Information – Selective Disclosure C VREF Rs SRP SRN 2010 Dallas BMS Deep Dive Battery Pack Rsns Current Sense INA169 STAT2 PG L 2~3V Clamp Pre-condition deeply discharge battery solution Function block: Pre-condition deeply discharge battery When battery voltage is deeply discharged lower than 3V, the current sense circuit can not work properly. The pre-condition circuit needs: • The pre-condition current can bring a deeply discharged battery voltage higher than 3V. • The pre-condition current is lower than bias supply output capability. A simply resistor (R46 and R47) and diode (D8) pre-charge path can pre-charge the battery voltage up to the 3V that is a minimum operating voltage range of the current sense circuit. A comparator compares the battery voltage with 3.3Vref. If the battery voltage is higher than 3.3V, the CE is pulled to high and charger is enabled. TPS54060 VCC bias supply R46 D8 R47 BAT R10 VREF D7 R31 CE 2010 Dallas BMS Deep Dive LM2903 VREF TI Information – Selective Disclosure The calculation tool of L, C value and other parameters The calculation tool of L, C value and other parameters can be found in http://www.ti.com/litv/zip/sluc175c Battery charge voltage setting Battery pre-charge/termination current setting Battery fast-charge current setting Iripple_Lout_Vripple LC output filter resonant frequency Fast charge timer TS resistor network 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure EVM and Application note information The high voltage charge EVM (HPA603) and user’s guide (SLUU447) are available. Application notes (SLUA580) is released: A practical high voltage charger solution with existing bq24610 charger IC. 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure Test Results on HPA603 EVM 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure 23 Test result on HPA603 EVM • 1 ISET1 control IBAT – 1.1 ISET1 vs IBAT waveform – 1.2 ISET1 transient – 1.3 ISET1 accuracy • 2 Switching waveforms • 3 Charger start-up or shut-down with CE control • 4 Battery insertion and removal • 5 soft start • 6 efficiency 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure Modified Charger Block Diagram The charger circuit have to do several modifications. The block diagram of HPA603 EVM: DC Input Vcc Bias Supply TPS54060 35~57V 8~14V Vcc ACN ACP CE ACDRV CE VCC Pre-charge Deeply discharged Battery BATDRV BTST setting REGN VREF Vcc BTST ISET1 ISET2 Pack Thermistor ACSET HIDRV PH TS TTC Half Bridge Gate Drive UCC27201 LODRV GND Vcc Q1 STAT1 Q2 Buffer LM358 bq24610/30 VFB TI Information – Selective Disclosure C VREF Rs SRP SRN 2010 Dallas BMS Deep Dive Battery Pack Rsns Current Sense INA169 STAT2 PG L 2~3V Clamp 1.1 ISET1 vs IBAT waveform IBAT ISET1 • IBAT are proportional to ISET1. The ratio follows the datasheet equation. 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure 1.2 ISET1 transient 2 • ISET1 from 1V to 2V （CCM） IBAT ISET1 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure 1.3 ISET1 accuracy ISET1 vs Vsns 16 14 Vsns error (%) 12 10 8 Series1 6 4 2 0 0 0.5 1 1.5 ISET1 (V) 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure 2 2.5 2 Switching waveforms High side gate High side gate Switching node Inductor current 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure 3. Charger start-up or shut-down with CE control VBAT CE Switching node Inductor current 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure 4 Battery removal and insertion VBAT VIN Switching node Inductor current Ch1 (yellow): Vin Ch2 (blue): Vbat Ch3 (pink): PH 4 (green): IL 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure 5 soft start VBAT VIN Switching node Inductor current Ch1 (yellow): Vin; Ch2 (blue): Vbat; Ch3 (pink): PH; ch4 (green): IL 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure 6 efficiency Efficiency and power dissipation 100.0% 8 90.0% 7 80.0% Efficiency 5 60.0% 50.0% 4 40.0% 3 48Vin; 30Vbat 30.0% 2 power dissipation 20.0% 1 10.0% 0.0% 0 0 1 2 3 4 Charging current (A) 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure 5 6 Power dissipation (W) 6 70.0% More Higher input voltage charger: 100Vin_max and 16-cell 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure 34 Higher input range solution If need a even high voltage, for example: 16 cell battery charger with 80V input. Please update those components and circuits: Output Input bq24610EVM (HPA603EVM) 8-cell Li-ion battery 8x4.2=33.6V Maximum 60V input 80Vin/16cell Li-ion battery Charger 16-cell Li-ion battery 16x4.2=67.2V Maximum 100V input Changer requirement VCC bias supply Current sense circuit R23 (Vbat setting) L1 value (Keep ΔI constant) Power FET bq24610EVM (HPA603EVM) TPS54060 INA169 R23: 464k 22uH 80V FET Si7852 80Vin/16cell Any 100V input; 10Vout@150mA bias supply Current mirror: ZDS1009 R23: 953k 47uH 100V FET SiR846 Change list: Li-ion battery Charger 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure SMBus High voltage charger solution 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure 36 SMBus High Voltage Charger Solution DC Input Vcc Bias Supply TPS54060 8~14V Vcc CSSN CSSP DCIN ACIN VDDSMB Pre-charge Deeply discharged Battery BTST setting VREF SMBUS CE PVCC ACOK BOOT SCL SDA UGATE VICM PHASE R9 7.5k GND C23 51p Q4 Half Bridge Gate Drive UCC27201 EAO EAI VFB bq24747 1MΩ TI Information – Selective Disclosure C VREF Rs CSON 2010 Dallas BMS Deep Dive Q5 Buffer LM358 FBO R11 200k Battery Pack Rsns Current Sense INA169 CSOP R10 20k C22 130p L LGATE ICOUT ICREF C21 2000p Vcc 2~3V Clamp •Thank you •Questions 2010 Dallas BMS Deep Dive TI Information – Selective Disclosure
