Radio Frequency Engineering
Lecture #1 Passives - Extra
Lecture #1
Passives – Extra
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
RF Inductors
Straight narrow wire
or PCB track
Coil
Coil on
former
with slug
tuner
Printed
Spiral
Inductor
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
10 MHz – 40 GHz conical inductor, ~ 2.2 mm long
Full of EM absorber
VERY
LOSSY!!
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
RF Capacitors
Polystyrene
Single layer chip
Polyester
Ceramic
Surface mount
Trimmer
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
Ultra-Broadband DC Blocking Capacitors
Small capacitor in parallel with large capacitor,
Plus resistive damping of resonances
“Opti-CapTM Broadband SMD Capacitor DC to Light”
Dielectric Laboratories Inc.
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
RF Resistors
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
Grounding methods: (a) through-substrate via-holes,
(b) wrap-around grounding and (c) bond-wires
MIM capacitor
GaAs substrate
(a)
MIM capacitor
GaAs substrate
Metalised lower
ground plane
Via hole
(b)
GaAs substrate
(c)
Gold-plated
chip carrier
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Metalised lower
ground plane
Radio Frequency Engineering
Lecture #1 Passives - Extra
Through-substrate vias are difficult to realise with brittle substrates (e.g. silicon, GaAs,
alumina, etc.) and have reliability implications. Up to ~20 GHz, they can be modelled with
a simple series R-L circuit.
Wrap-around grounds have reduced inductance. However, they require an edge
metalisation process and they still impose severe restrictions on the topology of the circuit.
Bond wires have relatively high inductance (e.g. ~1 nH/mm with 25 m diameter wires).
Therefore, multiple wires are needed, which must be kept as short as possible. Moreover,
they impose severe restrictions on the topology of the circuit, since they have to be located
near the edge of the MIC. This type of grounding can be modelled with a fringe
capacitance in parallel with the inductor.
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
Simplified Bond Wire Modelling
o o  length, l 
LHF
Z RHF


LHF 

 j
2  width, 2R 
l
l
l
Ignoring a factor that accounts for the shape (length over diameter) of the wire!
Given a gold bond wire, having a bulk DC resistivity of 22.14 n.m and 25 m
diameter, calculate the skin depth, the internal HF inductance per millimetre and
HF resistance per millimetre at 3.6 GHz.
o 
2
o o
1
22.14109 m
 o  2.368 m
o 
 LHF 
o o 

103

  19 pH / m m a factor of ~ 40 too low
2  2  25106 / 2 
 RHF  LHF  119 m / m m
about right
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
© 2001 Amkor Technology, Inc.
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
Bare-chip device and typical parasitics
Hole through to ground, with gold
plated chip carrier insert
g d
Microstrip
s
End effect
capacitance of
the microstrip
~ 0.02 pF
Bond
pads
~ 0.04 pF each
Bond wires
~ 0.8 nH per mm length
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
Interconnect stack in the
Intel 130nm P860 technology
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
Circuit Design Techniques
 There are three quite distinct circuit design techniques, the choice of which largely
depends on the operating frequency of the circuit
 There is inevitably some overlap of each approach's useful frequency range of
application, and the techniques may often be blended together in the same design
MICROMACHINED STRUCTURES
 “all-transistor” techniques
CPW
 lumped-element techniques
 distributed-element techniques
MICROSTRIP
LUMPED ELEMENT
ALL-TRANSISTOR
0
20
40
60
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
80
100 GHz
Radio Frequency Engineering
Lecture #1 Passives - Extra
All-transistor Techniques
 circuits tend to use small device peripheries so that the resulting small input and
output capacitances do not unduly affect performance (e.g. operational amplifiers)
 usable up to at least 5 GHz, and such high frequency of operation is achieved largely
because of the low capacitance, rather than the use of microwave design techniques
 the design of these circuits at GHz frequencies requires tremendous design skill and
experience. This is available in the silicon industry, but generally not in GaAs industry
 the major advantage of active techniques is their high packing density, leading to
competitively priced products, but at the expense of increased DC power consumption
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
'all-transistor' circuit:
2 GHz MMIC band-pass filter
(employing 3 active inductors)
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
'all-transistor' active inductors (equivalent Q-factor of 15,000)
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
2 GHz MMIC active band-pass filter frequency performance
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
The advantages of active filters are:
1.
small size and mass
2.
low cost in mass production
3.
high selectivity
4.
easy integration with amplifiers, mixers, oscillators
5.
potential for electronic tuning.
Drawbacks associated with active techniques:
1.
poor noise figure
2.
non-linearity
3.
danger of oscillation
4.
complex bias circuitry and significant DC power
5.
sensitivity to fabrication tolerances
6.
environmental sensitivity
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
Pre-driver and
Receiver Applications
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
SiGe HBT 80 Gb/s Distributed Amplifier, chip size = 1.3 x 1.7 mm2
O. Wohlgemuth et al. (Lucent), EuMC 2003
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
Lumped-element Techniques
 for higher operating frequencies, the transistor’s input and output capacitances must be
accounted for
 lumped-element matching networks (using spiral inductors and overlay capacitors)
provide the best solution at frequencies below 20 GHz.
Lumped-element circuit: 1 to 2 GHz MMIC feedback amplifier (employing L-C components)
OUTPUT
INPUT
VG
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
VD
Radio Frequency Engineering
Lecture #1 Passives - Extra
A spiral transformer Marchand balun (0.7 x 1.5 mm2)
Port 3
Port 2
Port 1
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
Lumped-distributed equivalent of a
quarter-wave transmission line
Z0 , l
C
Z / 4
Zo 
sin 
C
cos
C
 Z / 4
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
Lumped-distributed branch-line coupler
C
C
Input
Direct
Isolated
Coupled
C
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
C
Radio Frequency Engineering
Lecture #1 Passives - Extra
The lumped element equivalent of a
quarter-wave transmission line
L

Z
o

C
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
C

1
Z
o
Radio Frequency Engineering
Lecture #1 Passives - Extra
Lumped-element Wilkinson power divider
OUT
L
IN
C
2Z o
2C
L
OUT
C
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授
Radio Frequency Engineering
Lecture #1 Passives - Extra
Lumped-element branch-line coupler
C
L1
C
Input
Direct
L2
L2
L1
Isolated
Coupled
C
C
ステファン・ルシズィン Stepan Lucyszyn
インペリアル・カレッジ・ロンドン准教授