STL26NM60N
N-channel 600 V, 0.160 Ω, 19 A PowerFLAT™ 8x8 HV
ultra low gate charge MDmesh™ II Power MOSFET
Features
Order code
VDSS @
TJmax
RDS(on)
max
650 V
< 0.185 Ω
STL26NM60N
ID
3
3
19 A (1)
"OTTOM VIEW
3
'
$
1. The value is rated according to Rthj-case
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
0OWER&,!4˜ X (6
Applications
■
Switching applications
Description
Figure 1.
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Internal schematic diagram
$
'
3
!-V
Table 1.
Device summary
Order code
Marking
Package
Packaging
STL26NM60N
26NM60N
PowerFLAT™ 8x8 HV
Tape and reel
November 2011
Doc ID 18472 Rev 2
1/14
www.st.com
14
Contents
STL26NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
.............................................. 8
Doc ID 18472 Rev 2
STL26NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
600
V
VGS
Gate-source voltage
± 25
V
Drain current (continuous) at TC = 25 °C
19
A
ID (1)
Drain current (continuous) at TC = 100 °C
12
A
ID(2)
Drain current (continuous) at Tamb = 25 °C
2.7
A
ID(2)
Drain current (continuous) at Tamb = 100 °C
1.7
A
Drain current (pulsed)
10.8
A
3
W
ID
IDM
(1)
(2),(3)
PTOT (2)
Total dissipation at Tamb = 25 °C
PTOT(1)
Total dissipation at TC = 25 °C
125
W
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max)
7.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
400
mJ
Peak diode recovery voltage slope
15
V/ns
- 55 to 150
°C
150
°C
Value
Unit
dv/dt (3)
Tstg
Tj
Storage temperature
Max. operating junction temperature
1. The value is rated according to Rthj-case
2. When mounted on FR-4 board of inch², 2oz Cu
3. ISD ≤ 19 A, di/dt ≤ 400 A/µs, VDS peak≤V(BR)DSS, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case max
0.83
°C/W
Rthj-amb(1)
Thermal resistance junction-amb max
45
°C/W
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Doc ID 18472 Rev 2
3/14
Electrical characteristics
2
STL26NM60N
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
Unit
600
V
IDSS
VDS = 600 V
Zero gate voltage
drain current (VGS = 0) VDS =600 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
100
nA
4
5
V
0.160
0.185
Ω
Min.
Typ.
Max.
Unit
VDS = 50 V, f = 1 MHz,
VGS = 0
-
1800
115
1.1
-
pF
pF
pF
VDS = 0 to 480 V, VGS = 0
-
310
-
pF
VGS = ± 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
Table 5.
Symbol
Ciss
Coss
Crss
3
VGS = 10 V, ID = 10 A
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
Coss(eq)(1) capacitance time
related
Test conditions
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
2.8
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 19 A,
VGS = 10 V
(see Figure 14)
-
60
8.5
30
-
nC
nC
nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
4/14
Doc ID 18472 Rev 2
STL26NM60N
Electrical characteristics
Table 6.
Symbol
td(on)
tr
td(off)
tf
Table 7.
Switching times
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 10 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15),
(see Figure 18)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Typ.
-
13
25
85
50
Min.
Typ.
Max
Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Min.
Test conditions
Max. Unit
-
19
76
A
A
ISD = 19 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 19 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 15)
-
370
5.8
31.5
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 19 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 15)
-
450
7.5
32.5
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 18472 Rev 2
5/14
Electrical characteristics
STL26NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
AM08987v1
ID
(A)
Zth PowerFLAT 8x8 HV
K
δ=0.5
)
0.2
on
a
is
Tj=150°C
Tc=25°C
Single pulse
10µs
DS
(
Op
Lim era
ite tion
d
by in th
m is a
ax
R re
10
0.1
100µs
-1
10
0.05
0.02
1
1ms
0.01
Single pulse
10ms
0.1
0.1
Thermal impedance
-2
10
1
100
VDS(V)
10 -5
10
-4
-3
10
10
-2
10
tp (s)
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Normalized VDS vs temperature
Figure 7.
Static drain-source on resistance
AM09028v1
VDS
(norm)
ID=1mA
1.10
1.08
AM08989v1
RDS(on)
(Ω)
0.168
VGS=10V
0.166
1.06
0.164
1.04
0.162
1.02
0.160
1.00
6/14
0.98
0.158
0.96
0.156
0.94
0.92
-50 -25
0.152
0
0.154
0
25
50
75 100
TJ(°C)
Doc ID 18472 Rev 2
2
4
6
8 10 12 14 16 18 20 ID(A)
STL26NM60N
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
AM08990v1
VGS
(V)
VDD=480V
ID=19A
12
500
VDS
10
Capacitance variations
AM03319v1
C
(pF)
10000
400
Ciss
1000
8
300
6
100
Coss
200
4
100
2
0
0
20
10
40
30
50
10
Crss
1
0.1
0
Qg(nC)
60
Figure 10. Normalized gate threshold voltage
vs temperature
AM08991v1
VGS(th)
(norm)
1
10
100
VDS(V)
Figure 11. Normalized on resistance vs
temperature
AM08992v1
RDS(on)
(norm)
ID=250µA
1.10
VGS=10V
ID=10A
2.1
1.9
1.00
1.7
1.5
0.90
1.3
1.1
0.80
0.9
0.70
-50 -25
0.5
-50 -25
0.7
0
25
75 100 125 TJ(°C)
50
0
25
50
75 100
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM08993v1
VSD
(V)
1.4
TJ=-50°C
1.2
TJ=25°C
1.0
0.8
0.6
TJ=150°C
0.4
0.2
0
0
4
8
12
16
20
ISD(A)
Doc ID 18472 Rev 2
7/14
Test circuits
3
STL26NM60N
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 17. Unclamped inductive waveform
AM01471v1
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/14
0
Doc ID 18472 Rev 2
10%
AM01473v1
STL26NM60N
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 18472 Rev 2
9/14
Package mechanical data
Table 8.
STL26NM60N
PowerFLAT™ 8x8 HV mechanical data
mm
Dim.
Min.
Typ.
Max.
A
0.80
0.90
1.00
A1
0.00
0.02
0.05
b
0.95
1.00
1.05
D
8.00
E
8.00
D2
7.05
7.20
7.30
E2
4.15
4.30
4.40
e
L
10/14
2.00
0.40
0.50
aaa
0.10
bbb
0.10
ccc
0.10
Doc ID 18472 Rev 2
0.60
STL26NM60N
Package mechanical data
Figure 19. PowerFLAT™ 8x8 HV drawing mechanical data
BOTTOM VIEW
b
CA B
L
bbb
0.40
E2
PIN#1 ID
D2
C
A
ccc C
A1
0.20±0.008
SIDE VIEW
SEATING
PLANE
0.08 C
D
A
B
E
INDEX AREA
aaa C
TOP VIEW
aaa C
8222871_Rev_B
Doc ID 18472 Rev 2
11/14
Package mechanical data
STL26NM60N
Figure 20. PowerFLAT™ 8x8 HV recommended footprint
0.60
7.70
4.40
7.30
2.00
1.05
Footprint
12/14
Doc ID 18472 Rev 2
STL26NM60N
5
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
Changes
14-Feb-2011
1
First release.
03-Nov-2011
2
Section 4: Package mechanical data has been updated.
Minor text changes.
Doc ID 18472 Rev 2
13/14
STL26NM60N
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