STFU28N65M2
N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2
Power MOSFET in a TO-220FP ultra narrow leads package
Datasheet - production data
Features
1
2




3
Order code
VDS
RDS(on) max
ID
STFU28N65M2
650 V
0.18 Ω
20 A
Extremely low gate charge
Excellent output capacitance (Coss) profile
100% avalanche tested
Zener-protected
Applications
TO-220FP
ultra narrow leads

Figure 1: Internal schematic diagram
D(2)
Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
G(1)
S(3)
AM15572v1_no_tab
Table 1: Device summary
Order code
Marking
Package
Packaging
STFU28N65M2
28N65M2
TO-220FP
ultra narrow leads
Tube
November 2015
DocID027607 Rev 3
This is information on a product in full production.
1/12
www.st.com
Contents
STFU28N65M2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuit ....................................................................................... 8
4
Package mechanical data ............................................................... 9
4.1
5
2/12
TO-220FP ultra narrow leads package information ........................... 9
Revision history ............................................................................ 11
DocID027607 Rev 3
STFU28N65M2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
VGS
ID
ID
Value
Unit
Gate-source voltage
± 25
V
Drain current (continuous) at TC = 25 °C
20(1)
A
(1)
A
Drain current (continuous) at TC = 100 °C
13
IDM(2)
Drain current (pulsed)
80
A
PTOT
Total dissipation at TC = 25 °C
30
W
VISO
Insulation withstand voltage (RMS) from all three leads to external
heat sink (t = 1 s; TC = 25 °C)
2500
V
dv/dt (3)
Peak diode recovery voltage slope
15
dv/dt (4)
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature
Tj
Operating junction temperature
V/ns
- 55 to 150
°C
Notes:
(1)Current
(2)Pulse
(3)I
SD
(4)V
limited by package.
width limited by safe operating area.
≤ 20 A, di/dt ≤ 400 A/µs; VDSpeak < V(BR)DSS, VDD = 520 V
DS
≤ 520 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
4.17
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width limited
by Tjmax)
2.4
A
EAS
Single pulse avalanche energy (starting Tj = 25°C, ID = IAR; VDD =
50 V)
760
mJ
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Electrical characteristics
2
STFU28N65M2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5: On /off states
Symbol
Parameter
Test conditions
Min.
V(BR)DSS
Drain-source breakdown voltage
ID = 1 mA, VGS = 0 V
650
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 650 V
IGSS
Typ.
Max.
Unit
V
1
µA
VDS = 650 V, TC = 125 °C
100
µA
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 10 A
0.15
0.18
Ω
Min.
Typ.
Max.
Unit
-
1440
-
pF
-
60
-
pF
-
2
-
pF
pF
2
Table 6: Dynamic
Symbol
Ciss
Parameter
Test conditions
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Coss
Output capacitance
Crss
Reverse transfer capacitance
C
(1)
oss eq.
Equivalent output capacitance
VDS = 0 to 520 V,
VGS = 0 V
-
307
-
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0
-
4.9
-
Ω
Qg
Total gate charge
-
35
-
nC
Qgs
Gate-source charge
-
6
-
nC
Qgd
Gate-drain charge
VDD = 520 V, ID = 20 A,
VGS = 10 V ( see Figure
15: "Test circuit for gate
charge behavior" )
-
15
-
nC
Notes:
(1)C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS
increases from 0 to 80% VDSS.
Table 7: Switching times
Symbol
td(on)
tr
td(off)
tf
4/12
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
Typ.
Max.
Unit
VDD = 325 V, ID = 10 A,
RG = 4.7 Ω, VGS = 10 V (
see Figure 14: "Test circuit
for resistive load switching
times" and Figure 19:
"Switching time waveform" )
-
13.4
-
ns
-
10
-
ns
-
59
-
ns
-
8.8
-
ns
DocID027607 Rev 3
STFU28N65M2
Electrical characteristics
Table 8: Source drain diode
Symbol
ISD
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
20
A
ISDM(1)
Source-drain current (pulsed)
-
80
A
VSD(2)
Forward on voltage
ISD = 20 A, VGS = 0 V
-
1.6
V
ISD = 20 A, di/dt = 100 A/µs,
VDD = 60 V ( see Figure 16:
"Test circuit for inductive
load switching and diode
recovery times" )
-
384
ns
-
5.7
µC
-
30
A
ISD = 20 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C,
(see Figure 16: "Test circuit
for inductive load switching
and diode recovery times" )
-
544
ns
-
8.2
µC
-
30.5
A
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
Notes:
(1)Pulse
width limited by safe operating area.
(2)Pulsed:
pulse duration = 300 µs, duty cycle 1.5%.
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Electrical characteristics
2.1
STFU28N65M2
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
GIPG031220141331MT
ID(A)
GIPG031220141336MT
ID
(A)
V GS=7, 8, 9, 10V
V DS=20V
50
50
6V
40
40
30
30
5V
20
20
10
10
4V
0
0
4
8
16
12
20
0
V DS(V)
Figure 6: Normalized gate threshold voltage vs.
temperature
GIPD180920141442FSR
V GS(th)
(norm)
ID = 250 µ A
1.1
4
6
8
V GS(V)
Figure 7: Normalized V(BR)DSS vs. temperature
GIPD180920141448FSR
V (BR)DSS
(norm)
ID= 1m A
1.04
1.00
0.9
0.96
0.8
0.92
0.7
6/12
2
1.08
1.0
0.6
-75
0
-25
25
75
125
T j(°C)
0.88
-75
DocID027607 Rev 3
-25
25
75
125
T j(°C)
STFU28N65M2
Electrical characteristics
Figure 8: Static drain-source on-resistance
GIPG031220141344MT
R DS(on)
(Ω)
0.158
Figure 9: Normalized on-resistance vs. temperature
GIPD180920141459FSR
R DS(on)
(norm)
V GS=10V
2.2
V GS= 10V
0.156
1.8
0.154
0.152
1.4
0.150
1
0.148
0.6
0.146
0.144
4
0
8
12
16
ID(A)
0.2
-75
Figure 10: Gate charge vs gate-source voltage
V GS
(V)
12
GIPG031220141340MT
V DS
V DS
(V)
V DD=520V
ID=20 A
500
-25
25
75
125
T j(°C)
Figure 11: Capacitance variations
GIPG031220141347MT
C
(pF)
10000
10
Ciss
400
1000
8
300
6
100
200
Coss
4
100
2
10
30
20
Figure 12: Output capacitance stored energy
GIPG051220141243MT
E oss
(µJ)
1
0.1
0
40 Q g(nC)
0
0
10
100
10
Crss
V DS(V)
Figure 13: Source-drain diode forward
characteristics
GIPG031220141421MT
V SD(V)
10
T J=-50°C
1
8
0.9
T J=25°C
6
0.8
4
0.7
2
0
0
1
T J=150°C
0.6
100
200
300
400
500
600
V DS(V)
0.5
DocID027607 Rev 3
0
4
8
12
16
20 ISD(A)
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Test circuit
3
STFU28N65M2
Test circuit
Figure 15: Test circuit for gate charge
behavior
Figure 14: Test circuit for resistive load
switching times
Figure 16: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive load test
circuit
Figure 18: Unclamped inductive waveform
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DocID027607 Rev 3
Figure 19: Switching time waveform
STFU28N65M2
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
TO-220FP ultra narrow leads package information
Figure 20: TO-220FP ultra narrow leads package outline
8576148_1
DocID027607 Rev 3
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Package mechanical data
STFU28N65M2
Table 9: TO-220FP ultra narrow leads mechanical data
mm
Dim.
Min.
10/12
Typ.
Max.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
E
0.45
0.60
F
0.65
0.75
F1
-
0.90
G
4.95
5.20
G1
2.40
H
10.00
10.40
L2
15.10
15.90
L3
28.50
30.50
L4
10.20
11.00
L5
2.50
3.10
L6
15.60
16.40
L7
9.00
9.30
L8
L9
3.20
3.60
-
1.30
Dia.
3.00
3.20
DocID027607 Rev 3
2.54
2.70
STFU28N65M2
5
Revision history
Revision history
Table 10: Document revision history
Date
Revision
09-Mar-2015
1
Initial release
07-Oct-2015
2
Document status promoted from preliminary to production data.
3
Updated Figure 1: "Internal schematic diagram" in cover page.
Updated Table 3: "Thermal data".
Minor text changes.
12-Nov-2015
Changes
DocID027607 Rev 3
11/12
STFU28N65M2
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