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EE409 CLO1 StaticCMOS

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EE409 - VLSI Design
Static CMOS
Dr. Emily Leong (Leong Hung Yang)
Email: leonghy@ucsiuniversity.edu.my
Reference : Weste, Neil HE, and David Harris. CMOS VLSI design: a circuits
and systems perspective. Pearson Education India,2015.
CMOS
nMOS commonly tied toGND
pMOS commonly tied toVDD
Gate Voltage
• VDDrepresent gate input in the digital
circuits, or simply the power = logic 1
• In 1970 to 1980 , VDD=5V,
• However, recent small transistor can’t
withstand high voltage, VDD has reduced to
(3.3 V, 2.5 V, 1.8 V, 1.5 V, 1.2 V, 1.0 V and so
on)
• VSS = simply represent ground = logic 0
nMOS Transistor Operation
Source
Gate
Drain
Polysilicon
SiO2
n+
n+
p
• Body is commonly tied to gnd ( 0V)
• When the Gate is at low voltage(VGS < VTP)
– Source to Body and Drain to Body diodes are OFF
– No current flow >>Transistor OFF
• When the Gate is at high voltage = 1(VGS ≥ VTN):
– Negative charge attract to body
– Inverts a channel under gate to n-type
– Electrons flow from Source toDrain
– Current flow >> TransistorON
bulk Si
pMOS Transistor Operation
Source
Gate
Drain
Polysilicon
Bubble – inverted /opposite behavior
compared to nMOS
SiO2
p+
p+
n
• Body is commonly tied toVDD
• When the gate is at a low voltage (VGS < VTP):
– Positive charge attracted to body
– Inverts a channel under gate top-type
– Transistor ON, current flows
• When the gate is at a high voltage (VGS ≥ VTP):
– Source and drain junctions areOFF
– Transistor OFF, no current flows
bulk Si
Transistor as switches
• In Digital circuits, MOS transistors are electrically
controlled switches
• Voltage at gate controls path from source to drain
d
nMOS
pMOS
g =0
g =1
d
d
OFF
g
ON
s
s
s
d
d
d
g
OFF
ON
s
s
s
g1
g2
Series Combination
Series Combination
ON
OFF
OFF
OFF
Parallel Combination
Parallel Combination
NMOS Inverter
Resistive Load
Inverter
https://www.tutorialspoint.com/vlsi_design/vlsi_design_mos_inverter.htm
NMOS LogicGate
NMOS acts as pull-down network
What function isthis?
NMOS NOR Gate
NMOS LogicGate
NMOS Nand Gate
NMOS Logic GateSummary
• Series transistor – AND
• Parallel transistor – OR
• Need to implement resistor separately (Not
good in design performance)WHY?
NMOS Logic GateSummary
• Series transistor – AND
• Parallel transistor – OR
• Needto implement resistor separately ( Not
good in design performance)WHY?
• Fabricate transistor in silicon area issmaller
compared to resistive load
• Transistor is active load givesbetter
performance
Exercise
1. Draw 2 inputs NAND gates using 3 NMOS
transistors
2. Draw 2 inputs NOR gates using 3 NMOS
transistors
CMOS
CMOS asinverter
CMOS NAND GATE
AND – nMOS series or parallel?
CMOS NAND GATE
EXERCISE
• DRAW 3-INPUTS CMOS NAND GATE
EXERCISE
• DRAW 3-INPUTS CMOS NAND GATE
CMOS NOR GATE
• Draw 2 inputs CMOS NOR Gate
CMOS NOR GATE
• Draw 2 inputs CMOS NOR Gate
Exercise
Exercise
Homework
• Form a group 3 students ( for future assignment also)
• Task 1
– Advantages of CMOS logic circuitdesigns over nMOS logic circuitdesigns.
– Make an electrical performancecomparison between CMOS andNMOS
– Why CMOS technology is preferred over NMOS technology?
• Task 2
- Operation of MOSFET (Depletion , Accumulation and Inversion)
Exercise
• Consider Figure showing a combination of logic gates below.
Figure 1
a. Determine the Boolean expression for Figure 1
b. Sketch Boolean expression above
a.
b.
using NMOS transistorsonly
CMOS transistors
Tutorial
Consider the logic functions below.
i. F = 𝐴𝐵𝐶 + 𝐷
ii. F = AC+BC+AC+D
a. Illustrate the schematic of the transistor level for the logic function F based
on using NMOS technology.
a. Illustrate the schematic of the transistor level for the logic function F based
on using CMOS technology.
Tutorial
Consider the logic functions below.
i. F =(𝐴+𝐵)𝐶
ii. F = 𝐴+(𝐵. 𝐶)
a. Determine the Boolean expression for the logic function above.
b. Illustrate the schematic of the transistor level for the logic function F based on
using NMOS technology.
c. Illustrate the schematic of the transistor level for the logic function F based on
using CMOS technology.
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