MC1496, MC1496B
Balanced Modulators/
Demodulators
These devices were designed for use where the output voltage is a
product of an input voltage (signal) and a switching function (carrier).
Typical applications include suppressed carrier and amplitude
modulation, synchronous detection, FM detection, phase detection,
and chopper applications. See ON Semiconductor Application Note
AN531 for additional design information.
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Features
1
• Excellent Carrier Suppression −65 dB typ @ 0.5 MHz
•
•
•
•
•
SOIC−14
D SUFFIX
CASE 751A
14
−50 dB typ @ 10 MHz
Adjustable Gain and Signal Handling
Balanced Inputs and Outputs
High Common Mode Rejection −85 dB Typical
This Device Contains 8 Active Transistors
Pb−Free Package is Available*
PDIP−14
P SUFFIX
CASE 646
14
1
PIN CONNECTIONS
Signal Input 1
14 VEE
Gain Adjust 2
13 N/C
Gain Adjust 3
12 Output
Signal Input 4
11 N/C
Bias 5
Output 6
N/C 7
10 Carrier Input
9 N/C
8 Input Carrier
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 10
1
Publication Order Number:
MC1496/D
MC1496, MC1496B
0
Log Scale Id
IC = 500 kHz
IS = 1.0 kHz
20
40
IC = 500 kHz, IS = 1.0 kHz
60
Figure 1. Suppressed Carrier Output
Waveform
499 kHz
500 kHz
501 kHz
Figure 2. Suppressed Carrier Spectrum
10
IC = 500 kHz
IS = 1.0 kHz
Linear Scale
8.0
6.0
4.0
2.0
IC = 500 kHz
IS = 1.0 kHz
0
499 kHz
Figure 3. Amplitude Modulation
Output Waveform
500 kHz
501 kHz
Figure 4. Amplitude−Modulation Spectrum
MAXIMUM RATINGS (TA = 25°C, unless otherwise noted.)
Rating
Symbol
Value
Unit
V
30
Vdc
Differential Input Signal
V8 − V10
V4 − V1
+5.0
±(5 + I5Re)
Vdc
Maximum Bias Current
I5
10
mA
RJA
100
°C/W
TA
0 to +70
−40 to +125
°C
Storage Temperature Range
Tstg
−65 to +150
°C
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
ESD
Applied Voltage
(V6−V8, V10−V1, V12−V8, V12−V10, V8−V4, V8−V1, V10−V4, V6−V10, V2−V5, V3−V5)
Thermal Resistance, Junction−to−Air
Plastic Dual In−Line Package
Operating Ambient Temperature Range
MC1496
MC1496B
2000
400
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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2
MC1496, MC1496B
ELECTRICAL CHARACTERISTICS (VCC = 12 Vdc, VEE = −8.0 Vdc, I5 = 1.0 mAdc, RL = 3.9 k, Re = 1.0 k, TA = Tlow to Thigh,
all input and output characteristics are single−ended, unless otherwise noted.) (Note 1)
Characteristic
Carrier Feedthrough
VC = 60 mVrms sine wave and
offset adjusted to zero
VC = 300 mVpp square wave:
offset adjusted to zero
offset not adjusted
fC = 1.0 kHz
fC = 10 MHz
Fig.
Note
Symbol
5
1
VCFT
fC = 1.0 kHz
fC = 1.0 kHz
Carrier Suppression
fS = 10 kHz, 300 mVrms
fC = 500 kHz, 60 mVrms sine wave
fC = 10 MHz, 60 mVrms sine wave
5
2
Transadmittance Bandwidth (Magnitude) (RL = 50 )
Carrier Input Port, VC = 60 mVrms sine wave
fS = 1.0 kHz, 300 mVrms sine wave
Signal Input Port, VS = 300 mVrms sine wave
|VC| = 0.5 Vdc
8
Signal Gain (VS = 100 mVrms, f = 1.0 kHz; | VC|= 0.5 Vdc)
10
3
Single−Ended Input Impedance, Signal Port, f = 5.0 MHz
Parallel Input Resistance
Parallel Input Capacitance
6
−
Single−Ended Output Impedance, f = 10 MHz
Parallel Output Resistance
Parallel Output Capacitance
6
−
Input Bias Current
I
+ I1 ) I4 ; I
+ I8 ) I10
bS
bC
2
2
Input Offset Current
IioS = I1−I4; IioC = I8−I10
7
−
7
Average Temperature Coefficient of Input Offset Current
(TA = −55°C to +125°C)
Min
Typ
Max
−
−
40
140
−
−
−
−
0.04
20
0.4
200
VCS
BW3dB
Vrms
mVrms
dB
40
−
8
Unit
65
50
−
−
k
MHz
−
300
−
−
80
−
AVS
2.5
3.5
−
V/V
rip
cip
−
−
200
2.0
−
−
k
pF
rop
coo
−
−
40
5.0
−
−
k
pF
IbS
IbC
−
−
12
12
30
30
−
⎥ IioS⎥
IioC⎥
−
−
0.7
0.7
7.0
7.0
A
7
−
⎥ TCIio⎥
−
2.0
−
nA/°C
Output Offset Current (I6−I9)
7
−
⎥ Ioo⎥
−
14
80
A
Average Temperature Coefficient of Output Offset Current
(TA = −55°C to +125°C)
7
−
⎥ TCIoo⎥
−
90
−
nA/°C
Common−Mode Input Swing, Signal Port, fS = 1.0 kHz
9
4
CMV
−
5.0
−
Vpp
Common−Mode Gain, Signal Port, fS = 1.0 kHz, |VC|= 0.5 Vdc
9
−
ACM
−
−85
−
dB
Common−Mode Quiescent Output Voltage (Pin 6 or Pin 9)
10
−
Vout
−
8.0
−
Vpp
Differential Output Voltage Swing Capability
10
−
Vout
−
8.0
−
Vpp
Power Supply Current
Power Supply Current
7
6
ICC
IEE
−
−
2.0
3.0
4.0
5.0
mAdc
7
5
PD
−
33
−
mW
I6 +I12
I14
DC Power Dissipation
1. Tlow = 0°C for MC1496
= −40°C for MC1496B
Thigh
= +70°C for MC1496
= +125°C for MC1496B
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3
A
MC1496, MC1496B
GENERAL OPERATING INFORMATION
Carrier Feedthrough
Note that in the test circuit of Figure 10, VS corresponds to
a maximum value of 1.0 V peak.
Carrier feedthrough is defined as the output voltage at
carrier frequency with only the carrier applied
(signal voltage = 0).
Carrier null is achieved by balancing the currents in the
differential amplifier by means of a bias trim potentiometer
(R1 of Figure 5).
Common Mode Swing
The common−mode swing is the voltage which may be
applied to both bases of the signal differential amplifier,
without saturating the current sources or without saturating
the differential amplifier itself by swinging it into the upper
switching devices. This swing is variable depending on the
particular circuit and biasing conditions chosen.
Carrier Suppression
Carrier suppression is defined as the ratio of each
sideband output to carrier output for the carrier and signal
voltage levels specified.
Carrier suppression is very dependent on carrier input
level, as shown in Figure 22. A low value of the carrier does
not fully switch the upper switching devices, and results in
lower signal gain, hence lower carrier suppression. A higher
than optimum carrier level results in unnecessary device and
circuit carrier feedthrough, which again degenerates the
suppression figure. The MC1496 has been characterized
with a 60 mVrms sinewave carrier input signal. This level
provides optimum carrier suppression at carrier frequencies
in the vicinity of 500 kHz, and is generally recommended for
balanced modulator applications.
Carrier feedthrough is independent of signal level, VS.
Thus carrier suppression can be maximized by operating
with large signal levels. However, a linear operating mode
must be maintained in the signal−input transistor pair − or
harmonics of the modulating signal will be generated and
appear in the device output as spurious sidebands of the
suppressed carrier. This requirement places an upper limit
on input−signal amplitude (see Figure 20). Note also that an
optimum carrier level is recommended in Figure 22 for good
carrier suppression and minimum spurious sideband
generation.
At higher frequencies circuit layout is very important in
order to minimize carrier feedthrough. Shielding may be
necessary in order to prevent capacitive coupling between
the carrier input leads and the output leads.
Power Dissipation
Power dissipation, PD, within the integrated circuit
package should be calculated as the summation of the
voltage−current products at each port, i.e. assuming
V12 = V6, I5 = I6 = I12 and ignoring base current,
PD = 2 I5 (V6 − V14) + I5)V5 − V14 where subscripts refer
to pin numbers.
Design Equations
The following is a partial list of design equations needed
to operate the circuit with other supply voltages and input
conditions.
A. Operating Current
The internal bias currents are set by the conditions at Pin 5.
Assume:
I5 = I6 = I12,
IBtt IC for all transistors
then :
R5+
The MC1496 has been characterized for the condition
I5 = 1.0 mA and is the generally recommended value.
B. Common−Mode Quiescent Output Voltage
V6 = V12 = V+ − I5 RL
Biasing
Signal Gain and Maximum Input Level
The MC1496 requires three dc bias voltage levels which
must be set externally. Guidelines for setting up these three
levels include maintaining at least 2.0 V collector−base bias
on all transistors while not exceeding the voltages given in
the absolute maximum rating table;
30 Vdc w [(V6, V12) − (V8, V10)] w 2 Vdc
30 Vdc w [(V8, V10) − (V1, V4)] w 2.7 Vdc
30 Vdc w [(V1, V4) − (V5)] w 2.7 Vdc
The foregoing conditions are based on the following
approximations:
Signal gain (single−ended) at low frequencies is defined
as the voltage gain,
A
VS
+
where: R5 is the resistor between
V * *
*500 where: Pin 5 and ground
I5
where: = 0.75 at TA = +25°C
R
Vo
L
+
where r e + 26 mV
V
R e)2r e
I5(mA)
S
A constant dc potential is applied to the carrier input
terminals to fully switch two of the upper transistors “on”
and two transistors “off” (VC = 0.5 Vdc). This in effect
forms a cascode differential amplifier.
Linear operation requires that the signal input be below a
critical value determined by RE and the bias current I5.
V6 = V12, V8 = V10, V1 = V4
VS p I5 RE (Volts peak)
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MC1496, MC1496B
Negative Supply
Bias currents flowing into Pins 1, 4, 8 and 10 are transistor
base currents and can normally be neglected if external bias
dividers are designed to carry 1.0 mA or more.
VEE should be dc only. The insertion of an RF choke in
series with VEE can enhance the stability of the internal
current sources.
Transadmittance Bandwidth
Signal Port Stability
Carrier transadmittance bandwidth is the 3.0 dB bandwidth
of the device forward transadmittance as defined by:
i o (each sideband)
v s (signal)
21C+
Under certain values of driving source impedance,
oscillation may occur. In this event, an RC suppression
network should be connected directly to each input using
short leads. This will reduce the Q of the source−tuned
circuits that cause the oscillation.
⎥ Vo + 0
Signal transadmittance bandwidth is the 3.0 dB bandwidth
of the device forward transadmittance as defined by:
i o (signal)
21S+ v (signal)
s
Signal Input
(Pins 1 and 4)
⎥ Vc + 0.5 Vdc, Vo + 0
510
10 pF
Coupling and Bypass Capacitors
Capacitors C1 and C2 (Figure 5) should be selected for a
reactance of less than 5.0 at the carrier frequency.
An alternate method for low−frequency applications is to
insert a 1.0 k resistor in series with the input (Pins 1, 4). In
this case input current drift may cause serious degradation
of carrier suppression.
Output Signal
The output signal is taken from Pins 6 and 12 either
balanced or single−ended. Figure 11 shows the output levels
of each of the two output sidebands resulting from variations
in both the carrier and modulating signal inputs with a
single−ended output connection.
TEST CIRCUITS
1.0 k
VCC
12 Vdc
1.0 k
Re
C1
0.1 F
51
C2
Carrier
Input 0.1 F
VC
VS
Modulating
Signal Input
10 k
10 k 51
2
8
10
1
4
1.0 k
I9 I6
50 k
I10
V−
R1
Zin
+V o
I5
6.8 k
−8.0 Vdc
Figure 6. Input−Output Impedance
1.0 k
I6
6
MC1496
2.0 k
I9
12
I10
VCC
12 Vdc
1.0 k
Re
51
3
14
Shielding of input and output leads may be needed
to properly perform these tests.
NOTE:
−8.0 Vdc
VEE
Re = 1.0 k
1.0 k
12
5
6.8 k
1.0 k
8
10
1
4
+V o
Zout
−V o
6
MC1496
5
VCC
12 Vdc
I7
I8
I1
I4
3
14
Figure 5. Carrier Rejection and Suppression
2
2
−V o
12
51
0.5 V
8
+ − 10
1
4
RL
3.9 k
6
MC1496
14
Carrier Null
3
RL
3.9 k
Re = 1.0 k
5
Carrier
Input 0.1 F
VC
VS
Modulating
Signal Input
10 k
0.1 F
8
10
1
4
10 k
51
51
2
1.0 k
Carrier Null
−8.0 Vdc
VEE
3
50 50
6
MC1496
12
14
50 k
6.8 k
2.0 k
5
6.8 k
V−
−8.0 Vdc
VEE
Figure 8. Transconductance Bandwidth
Figure 7. Bias and Offset Currents
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5
0.01
F
+V o
−V o
MC1496, MC1496B
VCC
12 Vdc
Re = 1.0 k
1.0 k
VS
14
Re = 1.0 k
1.0 k
3.9 k
3
0.5 V 8 2
+ − 10
1
MC1496 6
4
12
1.0 k
VCC
12 Vdc
3.9 k
1.0 k
+V o
VS
−V o
0.5 V
8
+ − 10
1
4
5
50
6.8 k
50
−8.0 Vdc
VEE
⎥ V ⎥
A
+ 20 log o
CM
V
S
2
3
3.9 k
6
MC1496
12
14
5
I5 =
1.0 mA
6.8 k
3.9 k
+V o
−V o
−8.0 Vdc
VEE
Figure 9. Common Mode Gain
Figure 10. Signal Gain and Output Swing
Typical characteristics were obtained with circuit shown in Figure 5, fC = 500 kHz (sine wave),
VC = 60 mVrms, fS = 1.0 kHz, VS = 300 mVrms, TA = 25°C, unless otherwise noted.
1.0 M
2.0
r ip, PARALLEL INPUT RESISTANCE (kΩ)
1.6
Signal Input = 600 mV
1.2
400 mV
0.8
300 mV
200 mV
0.4
100 mV
0
0
50
200
100
150
VC, CARRIER LEVEL (mVrms)
500
+rip
50
10
5.0
1.0
1.0
5.0
4.0
3.0
2.0
1.0
2.0
10
5.0
20
f, FREQUENCY (MHz)
5.0
10
f, FREQUENCY (MHz)
50
100
Figure 12. Signal−Port Parallel−Equivalent
Input Resistance versus Frequency
100
50
rop, PARALLEL OUTPUT RESISTANCE (kΩ)
cip , PARALLEL INPUT CAPACITANCE (pF)
Figure 11. Sideband Output versus
Carrier Levels
0
1.0
−rip
100
Figure 13. Signal−Port Parallel−Equivalent
Input Capacitance versus Frequency
140
14
120
12
100
10
rop
80
60
cop
6.0
40
4.0
20
2.0
0
0
1.0
10
f, FREQUENCY (MHz)
Figure 14. Single−Ended Output Impedance
versus Frequency
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6
8.0
0
100
cop, PARALLEL OUTPUT CAPACITANCE (pF)
VO , OUTPUT AMPLITUDE OF EACH SIDEBAND (Vrms)
TYPICAL CHARACTERISTICS
MC1496, MC1496B
TYPICAL CHARACTERISTICS (continued)
0
1.0
0.9
Signal Port
VCS , CARRIER SUPPRESION (dB)
γ 21, TRANSADMITTANCE (mmho)
Typical characteristics were obtained with circuit shown in Figure 5, fC = 500 kHz (sine wave),
VC = 60 mVrms, fS = 1.0 kHz, VS = 300 mVrms, TA = 25°C, unless otherwise noted.
0.8
0.7
0.6
Side Band
Sideband Transadmittance
I out(EachSideband)
21 +
V out + 0
V (Signal)
in
0.5
⎥
0.4
0.3
Signal Port Transadmittance
I
21 + out V out + 0|V | + 0.5Vdc
C
V
in
1.0
10
100
fC, CARRIER FREQUENCY (MHz)
0.2
⎥
0.1
0
0.1
10
20
(70°C)
40
50
60
70
−75
1000
MC1496
30
−50
SUPPRESSION BELOW EACH FUNDAMENTAL
CARRIER SIDEBAND (dB)
A VS, SINGLE-ENDED VOLTAGE GAIN (dB)
10
0
−10
|VC| = 0.5 Vdc
−20
RL = 3.9 k
Re = 2.0 k
RL = 500 Re = 1.0 k
RL
A +
V
R e ) 2r e
−30
0.01
0.1
1.0
f, FREQUENCY (MHz)
10
100
SUPPRESSION BELOW EACH FUNDAMENTAL
CARRIER SIDEBAND (dB)
VCFT , CARRIER OUTPUT VOLTAGE (mVrms)
1.0
0.1
0.5 1.0
5.0
10
fC, CARRIER FREQUENCY (MHz)
75
100
125
150 175
10
20
2fC
30
40
50
fC
60
70
0.05
3fC
0.1
0.5 1.0
5.0 10
fC, CARRIER FREQUENCY (MHz)
50
Figure 18. Carrier Suppression
versus Frequency
10
0.1
50
0
Figure 17. Signal−Port Frequency Response
0.01
0.05
25
Figure 16. Carrier Suppression
versus Temperature
RL = 3.9 k
Re = 500 RL = 3.9 k (Standard
Re = 1.0 k Test Circuit)
0
TA, AMBIENT TEMPERATURE (°C)
Figure 15. Sideband and Signal Port
Transadmittances versus Frequency
20
−25
50
0
10
20
30
40
fC ± 3fS
50
60
fC ± 2fS
70
80
0
Figure 19. Carrier Feedthrough
versus Frequency
200
400
600
VS, INPUT SIGNAL AMPLITUDE (mVrms)
800
Figure 20. Sideband Harmonic Suppression
versus Input Signal Level
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7
0
0
V CS , CARRIER SUPPRESSION (dB)
SUPPRESSION BELOW EACH FUNDAMENTAL
CARRIER SIDEBAND (dB)
MC1496, MC1496B
10
3fC ± fS
20
30
2fC ± fS
40
2fC ± 2fS
50
60
70
0.05
0.1
0.5 1.0
5.0
10
fC, CARRIER FREQUENCY (MHz)
10
20
30
40
fC = 500 kHz
50
60
70
50
fC = 10 MHz
0
100
Figure 21. Suppression of Carrier Harmonic
Sidebands versus Carrier Frequency
200
300
400
VC, CARRIER INPUT LEVEL (mVrms)
500
Figure 22. Carrier Suppression versus
Carrier Input Level
OPERATIONS INFORMATION
The MC1496, a monolithic balanced modulator circuit, is
components and have an amplitude which is a function of the
shown in Figure 23.
product of the input signal amplitudes.
This circuit consists of an upper quad differential amplifier
For high−level operation at the carrier input port and
driven by a standard differential amplifier with dual current
linear operation at the modulating signal port, the output
sources. The output collectors are cross−coupled so that
signal will contain sum and difference frequency
components of the modulating signal frequency and the
full−wave balanced multiplication of the two input voltages
fundamental and odd harmonics of the carrier frequency.
occurs. That is, the output signal is a constant times the
The output amplitude will be a constant times the
product of the two input signals.
modulating signal amplitude. Any amplitude variations in
Mathematical analysis of linear ac signal multiplication
the carrier signal will not appear in the output.
indicates that the output spectrum will consist of only the sum
The linear signal handling capabilities of a differential
and difference of the two input frequencies. Thus, the device
amplifier are well defined. With no emitter degeneration, the
may be used as a balanced modulator, doubly balanced mixer,
maximum input voltage for linear operation is
product detector, frequency doubler, and other applications
approximately 25 mV peak. Since the upper differential
requiring these particular output signal characteristics.
amplifier has its emitters internally connected, this voltage
The lower differential amplifier has its emitters connected
applies to the carrier input port for all conditions.
to the package pins so that an external emitter resistance may
be used. Also, external load resistors are employed at the
Since the lower differential amplifier has provisions for an
device output.
external emitter resistance, its linear signal handling range
may be adjusted by the user. The maximum input voltage for
Signal Levels
linear operation may be approximated from the following
The upper quad differential amplifier may be operated
expression:
either in a linear or a saturated mode. The lower differential
V = (I5) (RE) volts peak.
amplifier is operated in a linear mode for most applications.
This expression may be used to compute the minimum
For low−level operation at both input ports, the output
value
of RE for a given input voltage amplitude.
signal will contain sum and difference frequency
(−) 12
(+) 6
1.0 k
Vo,
Output
51
10 (−)
Carrier V
Input C
V 0.1 F
Carrier C
Input
VS
Modulating
Signal 10 k
Input
8 (+)
4 (−)
Signal V
S
1 (+)
Input
2
3
Gain
Adjust
Bias 5
500
500
500
12 Vdc
1.0 k
0.1 F
8
10
1
4
10 k
51
51
2
Re 1.0 k
12
14
5
50 k
Carrier Null
VEE 14
Figure 23. Circuit Schematic
RL
3.9 k
6
MC1496
I5
(Pin numbers
per G package)
3
6.8 k
−8.0 Vdc
VEE
Figure 24. Typical Modulator Circuit
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8
RL
3.9 k
+Vo
−Vo
MC1496, MC1496B
Table 1. Voltage Gain and Output Frequencies
Carrier Input Signal (VC)
Low−level dc
Approximate Voltage Gain
RL V
ǒ Ǔ
2(R E ) 2r e) KT
q
RL
High−level dc
Low−level ac
C
Output Signal Frequency(s)
fM
fM
R ) 2r e
E
R L V (rms)
C
Ǹ
2 2 KT
q (RE ) 2r e)
ǒ Ǔ
fC ± fM
0.637 R L
fC ± fM, 3fC ± fM, 5fC ± fM, . . .
R ) 2r e
E
Low−level Modulating Signal, VM, assumed in all cases. VC is Carrier Input Voltage.
When the output signal contains multiple frequencies, the gain expression given is for the output amplitude ofeach of the two desired outputs,
fC + fM and fC − fM.
All gain expressions are for a single−ended output. For a differential output connection, multiply each expression by two.
RL = Load resistance.
RE = Emitter resistance between Pins 2 and 3.
re = Transistor dynamic emitter resistance, at 25°C;
26 mV
High−level ac
2.
3.
4.
5.
6.
7.
re [
I5 (mA)
8. K = Boltzmann′s Constant, T = temperature in degrees Kelvin, q = the charge on an electron.
The gain from the modulating signal input port to the
output is the MC1496 gain parameter which is most often of
interest to the designer. This gain has significance only when
the lower differential amplifier is operated in a linear mode,
but this includes most applications of the device.
As previously mentioned, the upper quad differential
amplifier may be operated either in a linear or a saturated
mode. Approximate gain expressions have been developed
for the MC1496 for a low−level modulating signal input and
the following carrier input conditions:
1) Low−level dc
2) High−level dc
3) Low−level ac
4) High−level ac
All that is required to shift from suppressed carrier to AM
operation is to adjust the carrier null potentiometer for the
proper amount of carrier insertion in the output signal.
However, the suppressed carrier null circuitry as shown in
Figure 26 does not have sufficient adjustment range.
Therefore, the modulator may be modified for AM
operation by changing two resistor values in the null circuit
as shown in Figure 27.
Product Detector
The MC1496 makes an excellent SSB product detector
(see Figure 28).
This product detector has a sensitivity of 3.0 V and a
dynamic range of 90 dB when operating at an intermediate
frequency of 9.0 MHz.
The detector is broadband for the entire high frequency
range. For operation at very low intermediate frequencies
down to 50 kHz the 0.1 F capacitors on Pins 8 and 10 should
be increased to 1.0 F. Also, the output filter at Pin 12 can
be tailored to a specific intermediate frequency and audio
amplifier input impedance.
As in all applications of the MC1496, the emitter
resistance between Pins 2 and 3 may be increased or
decreased to adjust circuit gain, sensitivity, and dynamic
range.
This circuit may also be used as an AM detector by
introducing carrier signal at the carrier input and an AM
signal at the SSB input.
The carrier signal may be derived from the intermediate
frequency signal or generated locally. The carrier signal may
These gains are summarized in Table 1, along with the
frequency components contained in the output signal.
APPLICATIONS INFORMATION
Double sideband suppressed carrier modulation is the
basic application of the MC1496. The suggested circuit for
this application is shown on the front page of this data sheet.
In some applications, it may be necessary to operate the
MC1496 with a single dc supply voltage instead of dual
supplies. Figure 25 shows a balanced modulator designed
for operation with a single 12 Vdc supply. Performance of
this circuit is similar to that of the dual supply modulator.
AM Modulator
The circuit shown in Figure 26 may be used as an
amplitude modulator with a minor modification.
http://onsemi.com
9
MC1496, MC1496B
be introduced with or without modulation, provided its level
is sufficiently high to saturate the upper quad differential
amplifier. If the carrier signal is modulated, a 300 mVrms
input level is recommended.
Figures 30 and 31 show a broadband frequency doubler
and a tuned output very high frequency (VHF) doubler,
respectively.
Phase Detection and FM Detection
The MC1496 will function as a phase detector. High−level
input signals are introduced at both inputs. When both inputs
are at the same frequency the MC1496 will deliver an output
which is a function of the phase difference between the two
input signals.
An FM detector may be constructed by using the phase
detector principle. A tuned circuit is added at one of the
inputs to cause the two input signals to vary in phase as a
function of frequency. The MC1496 will then provide an
output which is a function of the input signal frequency.
Doubly Balanced Mixer
The MC1496 may be used as a doubly balanced mixer
with either broadband or tuned narrow band input and output
networks.
The local oscillator signal is introduced at the carrier input
port with a recommended amplitude of 100 mVrms.
Figure 29 shows a mixer with a broadband input and a
tuned output.
Frequency Doubler
The MC1496 will operate as a frequency doubler by
introducing the same frequency at both input ports.
TYPICAL APPLICATIONS
1.0 k
820
0.1 F
+
25 F
15 V
Carrier Input
60 mVrms
Modulating −
0.1 F
51
+
8
10
1
4
2
1.0 k
10 k 10 k
100
3.0 k
0.1 F Output
12
10 k
100
51
S
Modulating
Signal 750
Input
750
50 k
VCC
12 Vdc
RL
0.1 F 2 Re 1.0 k 3 3.9 k
8
6
10
1
MC1496
4
12
51 51 14
5
Carrier Adjust
RL
3.9
+
6
MC1496
51
51 14
−
5
I5
VEE
−8.0 Vdc
6.8 k
Figure 26. Balanced Modulator−Demodulator
1.0 k
VC 0.1 F
Carrier
Input V
RL
3 3.9 k
Re 1.0 k
12
10 k
50 k
R1
Carrier Null
Figure 25. Balanced Modulator
(12 Vdc Single Supply)
1.0 k
0.1 F 2
8
10
1
4
51
VC 0.1 F
Carrier
Input
VS
Modulating
10 k
Signal
Input
VCC
12 Vd
1.0 k
DSB
MC1496
5
1.0 k
3.0 k
3
6
25 F 14
15 V
+ −
Signal Input 10 F
300 mVrms 15 V
Carrier
Null 50 k
VCC
12 Vdc
1.3 k
RL
3.9 k
820
0.1 F
1.0 k
2
51
+Vo Carrier Input
300 mVrms
SSB Input
−Vo
VCC
12 Vdc
1.3 k
8
0.1 F
10
1
1.0
k
4
0.1 F
1.0 k
15 6.8 k
VEE
−8.0 Vdc
Figure 27. AM Modulator Circuit
0.1
F
100
3.0 k
3
6
0.005
F
AF
1.0 k 1.0 FOutp
MC1496
14
5
12
10 k
Figure 28. Product Detector
(12 Vdc Single Supply)
http://onsemi.com
10
3.0 k
RLq 10
0.005 0.005
F
F
MC1496, MC1496B
1.0 k
VCC
+8.0 Vdc
1.0 k
0.001 F
Local
Oscillator
Input
100 mVrms
3
2
8
10
0.001 F 1
0.01
F
6
4
51
10 k
51
50 k
Null Adjust
12
5 5.0−80
14
6.8 k
1.0 k
C2
90−480 pF
pF
10 k
10 k
3
3.9 k
10
100
100
6
12
5
14
6.8 k
1.0 k
Figure 30. Low−Frequency Doubler
V+
1.0 k
0.001
F
8
10
1
0.001 F
150 MHz
Input
VCC
+8.0 Vdc
18 pF
0.001
F
100
VEE
−8.0 Vdc
Balance
Figure 29. Doubly Balanced Mixer
(Broadband Inputs, 9.0 MHz Tuned Output)
2
RFC
0.68 H
3
L1
18 nH
1.0−10 pF
6
MC1496
1.0−10 pF
300 MHz
Output
RL = 50
4
12
10 k
10 k
50 k
100 14
5
6.8 k
Balance
L1 = 1 Turn AWG
No. 18 Wire, 7/32″ ID
VEE
−8.0 Vdc
Frequency
(3fC + f S)
(3fC + 2f S )
(3fC )
(3fC − 2f S )
(3fC − fS )
(2fC + 2f S )
(2f C + 2f S )
(2fC − 2f S )
(2fC )
(2fC − 2f S )
(f + 2f )
C
S
(fC )
(fC − 2f S )
(fC + f S )
(fC − f S )
Figure 31. 150 to 300 MHz Doubler
AMPLITUDE
Outp
MC1496
I5
L1 = 44 Turns AWG No. 28 Enameled Wire, Wound
on Micrometals Type 44−6 Toroid Core.
fC
fS
fC ± fS
3.9 k
50 k
VEE
−8.0 Vdc
100
100
1.0 k
2
8
− C2+
100 F
Input
0.001 F
15
Vdc
Max
9.0 MHz 15 mVrms
100 F 15 Vdc 1
9.5 F
Output
4
L1
RL = 50
MC1496
10 k
100 F
25 Vdc
+
1.0 k −
RFC
100 H
51
RF Input
VCC
12 Vdc
Balanced Modulator Spectrum
DEFINITIONS
fC ± nfS Fundamental Carrier Sideband Harmonics
Carrier Harmonics
nfC
nfC ± nfS Carrier Harmonic Sidebands
Carrier Fundamental
Modulating Signal
Fundamental Carrier Sidebands
http://onsemi.com
11
MC1496, MC1496B
ORDERING INFORMATION
Device
Shipping †
Package
MC1496D
SOIC−14
MC1496DG
SOIC−14
(Pb−Free)
MC1496DR2
SOIC−14
MC1496DR2G
SOIC−14
(Pb−Free)
MC1496P
PDIP−14
MC1496PG
PDIP−14
(Pb−Free)
MC1496P1
PDIP−14
MC1496P1G
PDIP−14
(Pb−Free)
MC1496BD
SOIC−14
MC1496BDG
SOIC−14
(Pb−Free)
MC1496BDR2
SOIC−14
MC1496BDR2G
SOIC−14
(Pb−Free)
MC1496BP
PDIP−14
MC1496BPG
PDIP−14
(Pb−Free)
55 Units/Rail
2500 Tape & Reel
25 Units/Rail
55 Units/Rail
2500 Tape & Reel
25 Units/Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
PDIP−14
P SUFFIX
CASE 646
SOIC−14
D SUFFIX
CASE 751A
14
14
MC1496DG
AWLYWW
1
14
MC1496BDG
AWLYWW
14
MC1496P
AWLYYWWG
1
1
A
WL
YY, Y
WW
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
http://onsemi.com
12
MC1496BP
AWLYYWWG
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP−14
CASE 646−06
ISSUE S
1
SCALE 1:1
D
A
14
8
E
H
E1
1
NOTE 8
7
b2
c
B
TOP VIEW
END VIEW
WITH LEADS CONSTRAINED
NOTE 5
A2
A
NOTE 3
L
SEATING
PLANE
A1
C
D1
e
M
eB
END VIEW
14X b
SIDE VIEW
0.010
M
C A
M
B
M
NOTE 6
DATE 22 APR 2015
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACKAGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3.
4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH
OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE
NOT TO EXCEED 0.10 INCH.
5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM
PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR
TO DATUM C.
6. DIMENSION eB IS MEASURED AT THE LEAD TIPS WITH THE
LEADS UNCONSTRAINED.
7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE
LEADS, WHERE THE LEADS EXIT THE BODY.
8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE
CORNERS).
DIM
A
A1
A2
b
b2
C
D
D1
E
E1
e
eB
L
M
INCHES
MIN
MAX
−−−−
0.210
0.015
−−−−
0.115 0.195
0.014 0.022
0.060 TYP
0.008 0.014
0.735 0.775
0.005
−−−−
0.300 0.325
0.240 0.280
0.100 BSC
−−−−
0.430
0.115 0.150
−−−−
10 °
MILLIMETERS
MIN
MAX
−−−
5.33
0.38
−−−
2.92
4.95
0.35
0.56
1.52 TYP
0.20
0.36
18.67 19.69
0.13
−−−
7.62
8.26
6.10
7.11
2.54 BSC
−−−
10.92
2.92
3.81
−−−
10 °
GENERIC
MARKING DIAGRAM*
14
XXXXXXXXXXXX
XXXXXXXXXXXX
AWLYYWWG
STYLES ON PAGE 2
1
XXXXX
A
WL
YY
WW
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42428B
PDIP−14
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
PDIP−14
CASE 646−06
ISSUE S
DATE 22 APR 2015
STYLE 1:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
4. NO
CONNECTION
5. EMITTER
6. BASE
7. COLLECTOR
8. COLLECTOR
9. BASE
10. EMITTER
11. NO
CONNECTION
12. EMITTER
13. BASE
14. COLLECTOR
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
PIN 1. DRAIN
2. SOURCE
3. GATE
4. NO
CONNECTION
5. GATE
6. SOURCE
7. DRAIN
8. DRAIN
9. SOURCE
10. GATE
11. NO
CONNECTION
12. GATE
13. SOURCE
14. DRAIN
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. NO CONNECTION
5. SOURCE
6. DRAIN
7. GATE
8. GATE
9. DRAIN
10. SOURCE
11. NO CONNECTION
12. SOURCE
13. DRAIN
14. GATE
STYLE 6:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. NO CONNECTION
5. ANODE/CATHODE
6. NO CONNECTION
7. ANODE/CATHODE
8. ANODE/CATHODE
9. ANODE/CATHODE
10. NO CONNECTION
11. ANODE/CATHODE
12. ANODE/CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 7:
PIN 1. NO CONNECTION
2. ANODE
3. ANODE
4. NO CONNECTION
5. ANODE
6. NO CONNECTION
7. ANODE
8. ANODE
9. ANODE
10. NO CONNECTION
11. ANODE
12. ANODE
13. NO CONNECTION
14. COMMON
CATHODE
STYLE 8:
PIN 1. NO CONNECTION
2. CATHODE
3. CATHODE
4. NO CONNECTION
5. CATHODE
6. NO CONNECTION
7. CATHODE
8. CATHODE
9. CATHODE
10. NO CONNECTION
11. CATHODE
12. CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 9:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. NO CONNECTION
5. ANODE/CATHODE
6. ANODE/CATHODE
7. COMMON ANODE
8. COMMON ANODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. NO CONNECTION
12. ANODE/CATHODE
13. ANODE/CATHODE
14. COMMON CATHODE
STYLE 10:
PIN 1. COMMON
CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. ANODE/CATHODE
5. ANODE/CATHODE
6. NO CONNECTION
7. COMMON ANODE
8. COMMON
CATHODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. ANODE/CATHODE
12. ANODE/CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 11:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
7. CATHODE
8. ANODE
9. ANODE
10. ANODE
11. ANODE
12. ANODE
13. ANODE
14. ANODE
STYLE 12:
PIN 1. COMMON CATHODE
2. COMMON ANODE
3. ANODE/CATHODE
4. ANODE/CATHODE
5. ANODE/CATHODE
6. COMMON ANODE
7. COMMON CATHODE
8. ANODE/CATHODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. ANODE/CATHODE
12. ANODE/CATHODE
13. ANODE/CATHODE
14. ANODE/CATHODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42428B
PDIP−14
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−14 NB
CASE 751A−03
ISSUE L
14
1
SCALE 1:1
D
DATE 03 FEB 2016
A
B
14
8
A3
E
H
L
1
0.25
B
M
DETAIL A
7
13X
M
b
0.25
M
C A
S
B
S
0.10
X 45 _
M
A1
e
DETAIL A
h
A
C
SEATING
PLANE
DIM
A
A1
A3
b
D
E
e
H
h
L
M
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
6.50
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
14
14X
1.18
XXXXXXXXXG
AWLYWW
1
1
1.27
PITCH
XXXXX
A
WL
Y
WW
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42565B
SOIC−14 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOIC−14
CASE 751A−03
ISSUE L
DATE 03 FEB 2016
STYLE 1:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. NO CONNECTION
5. ANODE/CATHODE
6. NO CONNECTION
7. ANODE/CATHODE
8. ANODE/CATHODE
9. ANODE/CATHODE
10. NO CONNECTION
11. ANODE/CATHODE
12. ANODE/CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 2:
CANCELLED
STYLE 3:
PIN 1. NO CONNECTION
2. ANODE
3. ANODE
4. NO CONNECTION
5. ANODE
6. NO CONNECTION
7. ANODE
8. ANODE
9. ANODE
10. NO CONNECTION
11. ANODE
12. ANODE
13. NO CONNECTION
14. COMMON CATHODE
STYLE 4:
PIN 1. NO CONNECTION
2. CATHODE
3. CATHODE
4. NO CONNECTION
5. CATHODE
6. NO CONNECTION
7. CATHODE
8. CATHODE
9. CATHODE
10. NO CONNECTION
11. CATHODE
12. CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 5:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. ANODE/CATHODE
5. ANODE/CATHODE
6. NO CONNECTION
7. COMMON ANODE
8. COMMON CATHODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. ANODE/CATHODE
12. ANODE/CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 6:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
7. CATHODE
8. ANODE
9. ANODE
10. ANODE
11. ANODE
12. ANODE
13. ANODE
14. ANODE
STYLE 7:
PIN 1. ANODE/CATHODE
2. COMMON ANODE
3. COMMON CATHODE
4. ANODE/CATHODE
5. ANODE/CATHODE
6. ANODE/CATHODE
7. ANODE/CATHODE
8. ANODE/CATHODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. COMMON CATHODE
12. COMMON ANODE
13. ANODE/CATHODE
14. ANODE/CATHODE
STYLE 8:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. NO CONNECTION
5. ANODE/CATHODE
6. ANODE/CATHODE
7. COMMON ANODE
8. COMMON ANODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. NO CONNECTION
12. ANODE/CATHODE
13. ANODE/CATHODE
14. COMMON CATHODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42565B
SOIC−14 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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