Analytical Design for Resonant Inductive Coupling Wireless Power Transfer System With Class-E Inverter and Class-DE Rectifier Tomoharu Nagashima1 †, Xiuqin Wei2 , Elisenda Bou3 , Eduard Alarcón3 , and Hiroo Sekiya1 1 2 Graduate School of Advanced Integration Science, Chiba University, Chiba, 263–8522 Japan Department of Electronics Engineering and Computer Science, Fukuoka University, Fukuoka 814–0180, Japan 3 Electrical Engineering Department, UPC BarcelonaTech, Barcelona 08034, Spain E-mail: †nagashima@chiba-u.jp Abstract—This paper presents a RIC-WPT system with class-E inverter and class-DE rectifier along with its analytical design procedure. By using the class-E inverter as a transmitter and the class-DE rectifier as a receiver, the designed WPT system can achieve a high power-delivery efficiency because of the class-E ZVS/ZDS conditions in both the inverter and the rectifier. In the experimental results, the system achieved 73.0 % overall efficiency at 9.87 W (50 Ω) output power, coil distance 10 cm, and 1 MHz operating frequency. The experimental results showed good agreement with the design specifications, which indicates the validity of the design procedure. Keywords—Wireless power transfer, resonant inductive coupling, class-E inverter, class-DE rectifier, class-E ZVS/ZDS conditions, high overall efficiency. I. Introduction Recently, there are many researches and development about the wireless power transfer (WPT) systems [1]-[5]. Resonant inductive coupling (RIC) is one of the coupling methods for WPT systems and it has been widely used for a variety of applications, such as wireless battery charging for electric vehicles [1], bio-medical implants [2], and so on. For achieving a high power-delivery efficiency, it is important to design not only low power-loss RIC, but also high power-conversion-efficiency inverter and rectifier. In [3]-[5], the class-E2 and class-DE-E WPT systems were proposed for the power delivery efficiency enhancement. By satisfying the class-E zero-voltage switching and zero-derivative switching (ZVS/ZDS) conditions in both the inverter and the rectifier, these systems can achieve high power-delivery efficiency. However, in the class-E rectifier, the diode-reverse voltage is several times higher than the output voltage. Additionally, the large inductance for the low-pass filter is needed in the class-E rectifier. These disadvantages may lead a high cost implementation and a large circuit size. The class-DE rectifier is also one of the high power conversion efficiency rectifiers because of the class-E ZVS/ZDS conditions [6]. Compared with the class-E rectifier, the diode voltage can be suppressed to its output voltage. Additionally, an inductance for the low-pass filter is unnecessary in the circuit. By applying the class-DE rectifier to WPT systems, it is possible to fabricate high output voltage systems at low cost and small size. This paper presents a RIC-WPT system with class-E inverter and class-DE rectifier along with its analytical design 978-1-4799-8391-9/15/$31.00 ©2015 IEEE 686 procedure. By using the class-E inverter as a transmitter and the class-DE rectifier as a receiver, the designed WPT system can achieve a high power-delivery efficiency because of the class-E ZVS/ZDS conditions in both the inverter and the rectifier. In the experimental results, the system achieved 73.0 % overall efficiency at 9.87 W (50 Ω) output power, coil distance 10 cm, and 1 MHz operating frequency. The experimental results showed good agreement with the design specifications, which indicates the validity of the design procedure. II. ClassE-DE WPT System Figure 1(a) shows a topology of the WPT system with the class-E inverter [3], [4], [7], [8] and the class-DE converter [6]. In this system, it is regarded as the class-E inverter is connected with the class-DE rectifier by the resonant inductive coupling part. Figure 2 shows example waveforms of the WPT system, where θ = ωt = 2π f t is the angular time and f is the operating frequency. By applying the class-E switching technique to both the inverter and the rectifier, the WPT system can achieve a high power-delivery efficiency. A. Class-E Inverter The class-E inverter consists of dc-supply voltage VI , dc-feed inductance LC , MOSFET S , which works as a switching device, shunt capacitance CS , and impedance transformation component X p as shown in Fig. 1(a). The impedance transformation component is used for transforming the output network into the optimal load against VI . The switch of the inverter is driven by the driving signal vg . During the switch-off interval, the difference of currents through the dc-feed inductance and the resonant filter flows through the shunt capacitance. The current through the shunt capacitance produces the switch voltage vS . The most important operation of the class-E inverter is that the class-E ZVS/ZDS conditions are satisfied at turn-on instant as shown in Fig. 2. The class-E ZVS/ZDS conditions are expressed as dvS vS (2π) = 0 and = 0. (1) dθ θ=2π Because of the class-E ZVS/ZDS conditions, the class-E inverter achieves high power conversion efficiency under high frequency operations. Inductive coupling Class-E inverter LC VI II S iS vg Cs iinv vs i i C RL Xp L Class-DE rectifier vD CD C vg D RL D L CD vD 0 k Cs RL ( -k)L vs Xp VI iS S i kL iinv i vD iS 0 0 Io Zsec Zrec (c) C RL II iinv i Req Xp Leq vs VI II C Linv L LX vs iinv Rinv i } LC LC Cs 0 Ri Vind (b) VI iS S 0 Cr L RL C Ci } II C vD vS (a) LC i 0 II VO RL Cf OFF ON 0 IO Cs iS S inv Fig. 2. Zinv Zinv (d) 0 0 (e) Fig. 1. Class-E-DE WPT system. (a) System overview. (b) Equivalent circuit model including the coupling coils and the rectifier. (c) Equivalent circuit of the rectifier. (d) and (e) Equivalent circuits boiled down to the class-E inverter. Waveforms of class-E-DE WPT system. The class-DE rectifier can be replaced by the input capacitance Ci and the input resistance Ri , which are connected in series as shown in Fig. 1(c). The input capacitance Ci and the input resistance Ri are expressed as Ci = (3) RL [1 − cos(2πDd )]2 2π2 (4) and B. Class-DE Rectifier The class-DE rectifier consists of diodes D1 , D2 , shunt capacitors C D1 , C D2 , a filter capacitance C f , and load resistance RL . The waveforms of the class-DE rectifier are a reversed version of those of the class-DE inverter. The diodes work as half-wave voltage rectifiers and the rectified voltages are converted into a dc voltage through the filter capacitance. At the turn-off transition of the diodes, both the diode voltages vD1 , vD2 and their slopes of dvD1 /dθ, dvD2 /dθ are zero as shown in Fig. 2, which are also the class-E ZVS/ZDS conditions. Therefore, the class-DE rectifier can also achieve the high power conversion efficiency at high frequencies. Compared with the class-E rectifier, the class-DE rectifier can suppress the diode voltages to the output voltage Vo and does not require the low-pass inductance. Ri = For the resonance in the rectifier part, C2 should resonate with L2 and Ci . Therefore, C2 can be obtained from Ci C2 = 2 . (5) ω L2 C i − 1 The equivalent capacitance of C2 and Ci connected in serial Cr is expressed as C2Ci . (6) Cr = C2 + Ci The amplitude of the rectifier input current I2 is I2 = III. Analytical Design Procedure In this section, the analytical design procedure of the class-E-DE RIC-WPT system is given. First, the rectifier part is designed. After that, the rectifier part is expressed as the reflected impedance in the inverter side. Finally, the inverter part is designed to satisfy the class-E switching conditions. A. Class-DE Rectifier Part The rectifier part is designed using the model shown in Figs. 1(a) and (c). The detailed analysis of the class-DE rectifier was carried out in [6]. This subsection shows a summary of the results in [6]. The diode shunt capacitances C D1 , C D2 are expressed as C D1 + C D2 2π(C D1 + C D2 ) . sin(4πDd ) + 2π(1 − 2Dd ) 2π[1 + cos(2πDd )] = . ωRL [1 − cos(2πDd )] 2πIo , 1 − cos(2πDd ) where Io and Dd are the output current and the diode-on duty ratio, respectively. B. Coupling Part The impedance Z sec seen by the induced voltage source Vind is expressed as ( 1 1 ) Z sec = RL2 + Ri + j ωL2 − − . (8) ωC2 ωCi At resonance, the imaginary part of Z sec equals zero. Therefore, Vind can be obtained as Vind = (RL2 + Ri )I2 . (2) 687 (7) (9) The equivalent resistance Req and inductance Leq including the coupling coils and rectifier, which is denoted in Fig. 1(d), are k2 ω2 L1 L2 (RL2 + Ri ) Req = , (10) ( 1 )2 (RL2 + Ri )2 + ωL2 − ωCr and [ L2 ( 1 ) 2 ] k2 L1 (RL2 + Ri )2 − + Cr ωCr 2 Leq = ( )2 + L1 (1 − k ), (11) 1 (RL2 + Ri )2 + ωL2 − ωCr respectively, where k is the coupling coefficient of the coupling coils. The current through the transmitting coil I1 , which is the effective value of i1 , can be calculated from Vind I1 = . (12) √ ωk L1 L2 It is known that the resonant filter of the inverter should be inductive for achieving the class-E ZVS/ZDS conditions in the inverter. In this analysis, Linv is divided into L0 and L x virtually, where L0 and C1 realize resonant filter for ω as shown in Fig. 1(e). In this case, L x , which is used for current phase shift, for achieving the class-E ZVS/ZDS conditions can be obtained from [8] as ωL x { = 2(1 − DS )2 π2 − 1 + 2 cos ϕinv cos(2πDS + ϕinv ) Rinv } − cos 2(πDS + ϕinv )[cos(2πDS ) − π(1 − DS ) sin(2πDS )] / { 4 sin(πDS ) cos(πDS + ϕinv ) sin(πDS + ϕinv ) } [(1 − DS )π cos(πDS ) + sin(πDS )] . (19) On the other hand, we can have another expression for Rinv from the class-E inverter design viewpoint. According to the power relationship between Figs. 1(d) and (e), we have 2 I12 (Req + RL1 ) = Iinv Rinv . From (16) and (20), Rinv can be obtained as Rinv = C. Class-E Inverter Part The output impedance of the class-E inverter Req + RL1 + jωLeq is transformed into Zinv by the impedance transformation component X p as shown in Fig. 1(d). Zinv is 1 Zinv = 1 Req + RL1 + jωLeq + jωC p = Rinv + jωLinv , (13) (Req + RL1 ) ( )2 , 1 2 2 2 ω C p (Req + RL1 ) + ωLeq − ωC p (14) Leq (1 − ω2 LeqC p ) − C p (Req + RL1 )2 ( )2 . 1 2 2 2 ω C p (Req + RL1 ) + ωLeq − ωC (15) p The class-E-DE WPT system is transformed into the typical class-E inverter as shown in Fig. 1(d). Therefore, many design equations for the class-E inverter [8] can be applied to the WPT system. From the relationship between the input voltage and the inverter current of the class-E inverter [8], the amplitude of the inverter current Iinv and the input current II for achieving the class-E ZVS/ZDS conditions are obtained as 2 sin(πDS ) sin(πDS + ϕinv ) Iinv = VI , (16) π(1 − DS )Rinv and II = cos(2πDS + ϕinv ) − cos ϕinv Iinv , 2π(1 − DS ) (17) respectively, where DS and ϕinv are the switch-on duty ratio and the phase shift between the inverter current iinv and the driving signal vg , which is expressed as tan ϕinv = cos(2πD s ) − 1 . 2π(1 − D s ) + sin(2πD s ) π2 (1 − DS )2 I12 (Req + RL1 ) . (21) Now, we have two expressions of Rinv as given in (14) and (21). By equating the right-had side of (14) and (21), X p for achieving both the class-E ZVS/ZDS conditions and the specified output power is obtained as [ ] 2 −Rinv (Req + RL1 )2 + ω2 Leq √ [ ]. 2 ωLeq Rinv ± Rinv (Req +RL1 ) (Req +RL1 )(Req +RL1 −Rinv )+ω2 Leq (22) It is shown in (22) that there are two solutions. The solution that satisfies L0 = Linv − L x > 0 should be selected because L0 resonates with C1 . and Linv = 2 sin2 (πDS ) sin2 (πDS + ϕinv )VI2 Xp = where Rinv and Linv are Rinv = (20) (18) 688 From [8], the shunt capacitance CS and the dc-feed inductance LC are calculated from 1 CS = {2 sin(πD s ) cos(πD s + ϕinv ) ωπ2 (1 − D s )Rinv · sin(πD s + ϕinv )[(1 − D s )π cos(πD s ) + sin(πD s )]} , (23) and LC = ) Rinv ( π2 +2 . f 2 (24) IV. Design Example A design example is shown in this section. First, the design specifications were given as follows: operating frequency f = 1 MHz, dc-supply voltage VI = 24 V, output power Po = 10 W, output resistance RL = 50 Ω, switch and diode on-duty ratios D s = 0.5 and Dd = 0.35, and distance between the primary coil and the secondary one dcoils = 10 cm. The parameters of the handmade coupling coils are: self inductances L1 = 23.1 µH and L2 = 22.7 µH, equivalent series resistances RL1 = 0.891 Ω and RL2 = 0.809 Ω, and coupling coefficient k = 0.0559 at dcoils = 10 cm. From the previous design procedure, the component values were obtained as given in Table I. In the LC CS C1 Cp C2 C D1 C D2 Cf RL L1 L2 k r L1 r L2 dcoils f VI Po ηall Analytical 186 µH 1.09 nF 768 pF 432 pF 1.15 nF 2.60 nF 2.60 nF 47 µF 50.0 Ω 1 MHz 24.0 V 10.0 W - Design values of design example Simulated 186 µH 1.09 nF 768 pF 432 pF 1.15 nF 2.60 nF 2.60 nF 47 µF 50.0 Ω 23.1 µH 22.7 µH 0.0559 0.891 Ω 0.829 Ω 1 MHz 24.0 V 9.84 W 76.0 % Measured 196 µH 1.12 nF 766 pF 429 pF 1.16 nF 2.63 nF 2.60 nF 50.3 Ω 23.1 µH 22.7 µH 0.0559 0.891 Ω 0.829 Ω 10 cm 1 MHz 24.0 V 9.87 W 73.0 % Overall efficiency (%) TABLE I. Difference∗ 5.4 % 2.8 % −0.24 % −0.65 % 0.57 % 1.3 % 0.039 % 0.6 % 0.0 % 0.0 % −1.1 % - Secondary coil Class-E inverter Class-DE rectifier Load resistance (a) vo (V) vD, (V) i (A) i (A) vs (V) vg (V) dcoils 10 ON 0 100 50 0 2 0 -2 2 0 -2 20 0 20 0 20 0 OFF ON 60 40 20 Ddopt 00 Fig. 4. 0.1 0.2 0.3 0.4 0.5 Diode-on duty ratio Dd Overall efficiency as a function of Dd . V. CONCLUSION In this paper, the RIC-WPT system with class-E inverter and class-DE rectifier along with its analytical design procedure has been proposed. By using the class-E inverter as a transmitter and the class-DE rectifier as a receiver, the designed WPT system can achieve a high power-delivery efficiency because of the class-E ZVS/ZDS conditions in both the inverter and the rectifier. In the experimental results, the system achieved 73.0 % overall efficiency at 9.87 W (50 Ω) output power, coil distance 10 cm, and 1 MHz operating frequency. The experimental results showed good agreement with the design specifications, which indicates the validity of the design procedure. Additionally, we revealed that the overall efficiency highly depends on the diode-on duty ratio, which also means that the derivation of the optimal diode-on duty ratio is quiet important for maximizing the overall efficiency. * “Difference” is the difference between analytical and experimental results. Primary coil 80 OFF Acknowledgments 0.5 1.0 1.5 Time (µs) 2.0 (b) Fig. 3. Experimental set up and result. (a) System overview. (b) Experimental waveforms for design example. This research was partially supported by Grants-in-Aid for Scientific Research (No. 13J08797, 26289115 and 25820112) of JSPS and Telecommunications Advancement Foundation, Japan. References [1] experiment, the IRFS4410 MOSFET and the STPS5H100B Schottky Barrier Diode were chosen as switching devices. Figure 3(a) shows the system overview of the design example. 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