JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate MOSFETS
CJT04N15
N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
150V
160mΩ@10V
4A
SOT-223
GENERAL DESCRIPTION
This CJT04N15 use advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.It
can be used in a wide variety of applications.
1
1. GATE
2. DRAIN
3. SOURCE
2
3
FEATURE
High density cell design for ultra low RDS(ON)
z
z
Fully characterized avalanche voltage and current
z
Excellent package for good heat dissipation
MARKING
T04N15
151
EQUIVALENT CIRCUIT
T04N15= Device code
151=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
VDS
150
Gate-Source Voltage
VGS
±20
Continuous Drain Current
ID
4
Pulsed Drain Current(note1)
IDM
16
RθJA
125
TJ
150
Thermal Resistance from Junction to Ambient
Junction Temperature
TSTG
Storage Temperature Range
Maximum lead temperure for soldering purposes ,
TL
1/8”from case for 5 seconds
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1
Unit
V
A
℃/W
-55 ~+150
260
℃
A-1,May,2016
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
150
V
Drain-source diode forward voltage(note2)
VSD
VGS = 0V, IS =2.0A
1.2
Zero gate voltage drain current
IDSS
VDS =150V, VGS =0V
1
µA
Gate-body leakage current (note2)
IGSS
VDS =0V, VGS =±20V
±100
nA
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
2.0
2.5
V
Static drain-source on-resistance
RDS(on)
VGS =10V, ID =4.0A
130
160
mΩ
On characteristics (note2)
Forward transconductance
gfs
VDS =15V, ID =4A
1.5
5
S
Dynamic characteristics (note 3)
900
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
70
Total gate charge
Qg
19
Gate-source charge
Qgs
Gate-drain charge
Qgd
7
Turn-on delay time (note3)
td(on)
8
VDS =25V,VGS =0V,f =1MHz
115
pF
Switching characteristics (note 3)
Turn-on rise time (note3)
Turn-off delay time (note3)
Turn-off fall time (note3)
tr
td(off)
VDS =75V,VGS =10V,ID =1.5A
5.5
VDS=75V, VGS=10V,
10
RG=6Ω, ID =1.0A,RL=75Ω
20
nC
ns
15
tf
Notes :
1.
Repetitive Rating:Pulse width limited by maximum junction temperature.
2.
Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3.
These parameters have no way to verify.
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2
A-1,May,2016
Typical Characteristics
Output Characteristics
Transfer Characteristics
20
20
Ta=25℃
VDS=10V
VGS=4V,5V,6V
Pulsed
Pulsed
16
16
8
VGS=3.2V
4
VGS=3V
DRAIN CURRENT
ID
12
DRAIN CURRENT
ID
(A)
(A)
VGS=3.5V
12
Ta=100℃
8
Ta=25℃
4
0
0
0
5
10
15
DRAIN TO SOURCE VOLTAGE
VDS
0
20
(V)
2
4
GATE TO SOURCE VOLTAGE
6
VGS
(V)
RDS(ON) —— VGS
RDS(ON) —— ID
300
500
Ta=25℃
Pulsed
Pulsed
ID=4A
250
(m)
RDS(ON)
200
VGS=10V
150
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(m)
400
100
300
Ta=100℃
200
100
Ta=25℃
50
0
0
1
2
4
3
DRAIN CURRENT
ID
5
6
2
(A)
4
6
8
GATE TO SOURCE VOLTAGE
VGS
10
(V)
Threshold Voltage
IS —— VSD
5
3.0
Pulsed
2.5
VTH
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
1
0.1
Ta=25℃
Ta=100℃
0.01
1E-3
0.0
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
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1.0
1.2
1.5
1.0
0.5
25
1.4
VSD (V)
ID=250uA
2.0
50
75
JUNCTION TEMPERATURE
3
100
Tj
125
( ℃)
A-1,May,2016
SOT-223 Package Outline Dimensions
Symbol
A
A1
A2
b
b1
c
D
E
E1
e
L
θ
Dimensions In Millimeters
Min.
Max.
——
1.800
0.020
0.100
1.500
1.700
0.660
0.840
2.900
3.100
0.230
0.350
6.300
6.700
6.700
7.300
3.300
3.700
2.300(BSC)
0.750
——
0°
10°
Dimensions In Inches
Min.
Max.
——
0.071
0.001
0.004
0.059
0.067
0.026
0.033
0.114
0.122
0.009
0.014
0.248
0.264
0.264
0.287
0.130
0.146
0.091(BSC)
0.030
——
0°
10°
SOT-223 Suggested Pad Layout
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4
A-1,May,2016
SOT-223 Tape and Reel
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5
A-1,May,2016