FDPC8014AS
PowerTrench® Power Clip
25V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
This device includes two specialized N-Channel MOSFETs in a
„ Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A
dual package. The switch node has been internally connected to
„ Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
enable easy placement and routing of synchronous buck
Q2: N-Channel
SyncFETTM (Q2) have been designed to provide optimal power
converters. The control MOSFET (Q1) and synchronous
„ Max rDS(on) = 1.0 mΩ at VGS = 10 V, ID = 40 A
efficiency.
„ Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 37 A
Applications
„ Low Inductance Packaging Shortens Rise/fall Times, Resulting in Lower Switching Losses
„ Computing
„ Communications
„ MOSFET Integration Enables Optimum Layout for
Lower Circuit Inductance and Reduced Switch
Node Ringing
„ General Purpose Point of Load
„ RoHS Compliant
PAD9
V+(HSD)
PIN1
PIN1
HSG
SW
GR
PAD10
GND(LSS)
V+
V+
Top
LSG
LSG HSG
GR
SW
SW
SW
V+
SW
SW
V+
SW
Bottom
Power Clip 5X6
Pin
Name
Description
1
HSG
High Side Gate
3,4,9
Pin
V+(HSD)
Name
High Side Drain
Description
Pin
2
GR
Gate Return
5,6,7
SW
Switching Node, Low Side Drain 10
8
Name
LSG
Description
Low Side Gate
GND(LSS) Low Side Source
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
Q1
25Note5
-Continuous
TC = 25 °C
(Note 6)
-Continuous
TC = 100 °C
(Note 6)
-Continuous
TA = 25 °C
TJ, TSTG
±12
±12
V
59
159
37
100
40Note1b
(Note 4)
266
1116
(Note 3)
73
294
Power Dissipation for Single Operation
TC = 25 °C
21
37
Power Dissipation for Single Operation
TA = 25 °C
2.1Note1a
2.3 Note1b
-Pulsed
PD
Units
V
20Note1a
ID
EAS
Q2
25
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
6.0
3.3
RθJA
Thermal Resistance, Junction to Ambient
60Note1a
55Note1b
RθJA
Thermal Resistance, Junction to Ambient
130Note1c
120Note1d
©2015 Fairchild Semiconductor Corporation
FDPC8014AS Rev.1.0
1
°C/W
www.fairchildsemi.com
FDPC8014AS PowerTrench® Power Clip
December 2015
Device Marking
FDPC8014AS
Device
FDPC8014AS
Package
Power Clip 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Type
Min.
25
25
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ID = 1 mA, VGS = 0 V
Q1
Q2
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
ID = 10 mA, referenced to 25 °C
Q1
Q2
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V
Q1
Q2
1
500
μA
μA
IGSS
Gate to Source Leakage Current,
Forward
VGS = 12 V/-8 V, VDS= 0 V
VGS = 12 V/-8 V, VDS= 0 V
Q1
Q2
±100
±100
nA
nA
2.5
3.0
V
V
24
25
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = VDS, ID = 1 mA
Q1
Q2
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
ID = 10 mA, referenced to 25 °C
Q1
Q2
-4
-3
VGS = 10V, ID = 20 A
VGS = 4.5 V, ID = 18 A
VGS = 10 V, ID = 20 A,TJ =125 °C
Q1
2.9
3.6
3.9
3.8
4.7
5.3
VGS = 10V, ID = 40 A
VGS = 4.5 V, ID = 37 A
VGS = 10 V, ID = 40 A ,TJ =125 °C
Q2
0.75
0.9
1.0
1.0
1.2
1.5
VDS = 5 V, ID = 20 A
VDS = 5 V, ID = 40 A
Q1
Q2
182
296
Q1
Q2
1695
6985
2375
9780
pF
Q1
Q2
495
2170
710
3040
pF
Q1
Q2
54
172
100
245
pF
0.4
0.4
1.2
1.2
Ω
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
0.8
1.0
1.3
1.5
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Q1:
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q2:
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
0.1
0.1
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
©2015 Fairchild Semiconductor Corporation
FDPC8014AS Rev.1.0
Q1:
VDD = 13 V, ID = 20 A, RGEN = 6 Ω
Q2:
VDD = 13 V, ID = 40 A, RGEN = 6 Ω
VGS = 0 V to 10 V
Q1
V = 13 V, ID
VGS = 0 V to 4.5 V DD
= 20 A
Q2
VDD = 13 V, ID
= 40 A
2
Q1
Q2
8
16
16
29
ns
Q1
Q2
2
6
10
12
ns
Q1
Q2
24
48
38
76
ns
Q1
Q2
2
5
10
10
ns
Q1
Q2
25
97
35
135
nC
Q1
Q2
11
44
16
62
nC
Q1
Q2
3.4
14
nC
Q1
Q2
2.2
9
nC
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FDPC8014AS PowerTrench® Power Clip
Package Marking and Ordering Information
Symbol
Parameter
Test Conditions
Type
Min.
Typ.
Max.
Units
Q1
Q2
0.8
0.8
1.2
1.2
V
Q1
Q2
59
159
A
Q1
Q2
266
1116
A
Q1
Q2
25
44
40
70
ns
Q1
Q2
10
78
20
125
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
IS
Diode continuous forward current
VGS = 0 V, IS = 20 A
VGS = 0 V, IS = 40 A
(Note 2)
(Note 2)
TC = 25 °C
IS,Pulse
Diode pulse current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Q1
IF = 20 A, di/dt = 100 A/μs
Q2
IF = 40 A, di/dt = 300 A/μs
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b. 55 °C/W when mounted on
a 1 in2 pad of 2 oz copper
a. 60 °C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
c. 130 °C/W when mounted on a
minimum pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Q1 :EAS of 73 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 24 A.
Q2: EAS of 294 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 14 A, VDD = 25 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 46 A.
4. Pulsed Id please refer to Fig 11 and Fig 24 SOA graph for more details.
5. The continuous VDS rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 KHz frequency can be applied.
6. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2015 Fairchild Semiconductor Corporation
FDPC8014AS Rev.1.0
3
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FDPC8014AS PowerTrench® Power Clip
Electrical Characteristics TJ = 25 °C unless otherwise noted.
75
5
ID, DRAIN CURRENT (A)
60
VGS = 4.5 V
45
VGS = 3.5 V
VGS = 3 V
30
VGS = 2.5 V
15
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.2
0.4
0.6
0.8
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
4
VGS = 2.5 V
3
2
VGS = 3 V
1
0
15
30
45
60
75
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
12
ID = 20 A
VGS = 10 V
1.5
rDS(on), DRAIN TO
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
SOURCE ON-RESISTANCE (mΩ)
1.6
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
0
1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
9
ID = 20 A
6
TJ = 125 oC
3
TJ = 25 oC
0
-50
1
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
2
3
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On-Resistance vs. Gate to
Source Voltage
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
IS, REVERSE DRAIN CURRENT (A)
75
VDS = 5 V
60
ID, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 3.5 V
45
TJ =
150 oC
30
TJ = 25 oC
15
TJ = -55 oC
0
1.0
1.5
2.0
2.5
10
1
TJ = 150 oC
TJ = 25 oC
0.1
0.01
TJ = -55 oC
0.001
0.0
3.0
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2015 Fairchild Semiconductor Corporation
FDPC8014AS Rev.1.0
VGS = 0 V
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
4
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FDPC8014AS PowerTrench® Power Clip
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
VGS, GATE TO SOURCE VOLTAGE (V)
10
10000
ID = 20 A
8
CAPACITANCE (pF)
VDD = 13 V
6
VDD = 10 V
4
VDD = 15 V
1000
Ciss
Coss
100
f = 1 MHz
VGS = 0 V
2
0
0
6
12
18
24
10
0.1
30
1
Figure 7. Gate Charge Characteristics
25
Figure 8. Capacitance vs. Drain
to Source Voltage
60
ID, DRAIN CURRENT (A)
30
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
50
VGS = 10 V
40
30
VGS = 4.5 V
20
10
o
RθJC = 6.0 C/W
1
0.001
0.01
0.1
1
10
0
25
100
50
125
15
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
10000
P(PK), PEAK TRANSIENT POWER (W)
300
100
10 μs
10
0.1
100
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
1
75
o
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
IAS, AVALANCHE CURRENT (A)
Crss
100 μs
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms/DC
SINGLE PULSE
TJ = MAX RATED
RθJC = 6.0 oC/W
TC = 25 oC
0.01
0.01
CURVE BENT TO
MEASURED DATA
0.1
1
10
100
o
RθJC = 6.0 C/W
o
TC = 25 C
1000
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
©2015 Fairchild Semiconductor Corporation
FDPC8014AS Rev.1.0
SINGLE PULSE
5
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FDPC8014AS PowerTrench® Power Clip
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
ZθJC (t) = r(t) x RθJc
RθJC = 6.0 oC/W
DUTY FACTOR: D = t1/ t2
TJ -TC = PDM x ZθJC(t)
SINGLE PULSE
0.001
-5
10
-4
10
-3
-2
10
10
-1
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2015 Fairchild Semiconductor Corporation
FDPC8014AS Rev.1.0
6
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FDPC8014AS PowerTrench® Power Clip
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
150
8
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 4.5 V
120
VGS = 3.5 V
VGS = 3 V
90
VGS = 2.5 V
60
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.2
0.4
0.6
6
4
VGS = 3 V
2
VGS = 3.5 V
0.8
0
30
VGS = 10 V
VGS = 4.5 V
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
90
120
150
ID, DRAIN CURRENT (A)
Figure 14. On- Region Characteristics
Figure 15. Normalized on-Resistance vs. Drain
Current and Gate Voltage
5
ID = 40 A
VGS = 10 V
1.4
rDS(on), DRAIN TO
1.3
1.2
1.1
1.0
0.9
0.8
-75
SOURCE ON-RESISTANCE (mΩ)
1.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
ID = 40 A
3
2
TJ = 125 oC
1
TJ = 25 oC
0
-50
-25
0
25
50
75
2
100 125 150
3
TJ, JUNCTION TEMPERATURE (oC)
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs. Gate to
Source Voltage
Figure 16. Normalized On-Resistance
vs. Junction Temperature
150
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
120
VDS = 5 V
90
60
TJ = 25 oC
TJ = 125 oC
30
TJ = -55 oC
0
1.0
1.5
2.0
2.5
100
VGS = 0 V
10
TJ = 125 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
3.0
0.2
0.4
0.6
0.8
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode
Forward Voltage vs. Source Current
©2015 Fairchild Semiconductor Corporation
FDPC8014AS Rev.1.0
7
1.0
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FDPC8014AS PowerTrench® Power Clip
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted.
10000
ID = 40 A
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 13 V
6
VDD = 10 V
VDD = 15 V
4
Coss
1000
Crss
2
f = 1 MHz
VGS = 0 V
100
0.1
0
0
20
40
60
80
100
25
160
TJ = 125 oC
10
ID, DRAIN CURRENT (A)
100
25 oC
TJ =
TJ = 100 oC
128
VGS = 10 V
96
VGS = 4.5 V
64
32
o
RθJC = 3.3 C/W
1
0.001
0.01
0.1
1
10
100
0
25
1000
50
150
10000
P(PK), PEAK TRANSIENT POWER (W)
10 μs
100
SINGLE PULSE
RθJC = 3.3 oC/W
TC = 25 oC
1000
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
RθJC = 3.3 oC/W
10 ms
CURVE BENT TO
MEASURED DATA
TC = 25 oC
0.1
0.1
125
Figure 23. Maximum Continuous Drain
Current vs. Case Temperature
2000
1000
1
100
TC, CASE TEMPERATURE ( C)
Figure 22. Unclamped Inductive
Switching Capability
10
75
o
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
Figure 21. Capacitance vs. Drain
to Source Voltage
Figure 20. Gate Charge Characteristics
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
1
10
100 ms/DC
70
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 25. Single Pulse Maximum
Power Dissipation
Figure 24. Forward Bias Safe
Operating Area
©2015 Fairchild Semiconductor Corporation
FDPC8014AS Rev.1.0
100
8
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FDPC8014AS PowerTrench® Power Clip
Typical Characteristics (Q2 N-Channel) TJ = 25°C unless otherwise noted.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
ZθJC (t) = r(t) x RθJc
RθJC = 3.3 oC/W
DUTY FACTOR: D = t1/ t2
TJ -TC = PDM x ZθJC(t)
0.01
SINGLE PULSE
0.001
-5
10
-4
10
-3
-2
10
10
-1
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 26. Junction-to-Case Transient Thermal Response Curve
©2015 Fairchild Semiconductor Corporation
FDPC8014AS Rev.1.0
9
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FDPC8014AS PowerTrench® Power Clip
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted.
SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench® MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverses recovery
characteristic of the FDPC8014AS.
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
-2
IDSS, REVERSE LEAKAGE CURRENT (A)
50
CURRENT (A)
40
30
di/dt = 300 A/μs
20
10
0
-10
100
150
200
250
300
350
400
450
500
TJ = 125 oC
-3
10
TJ = 100 oC
-4
10
-5
10
TJ = 25 oC
-6
10
0
5
10
15
20
25
VDS, REVERSE VOLTAGE (V)
TIME (ns)
Figure 28. SyncFETTM Body Diode Reverse
Leakage vs. Drain-source Voltage
Figure 27. FDPC8014AS SyncFETTM Body
Diode Reverse Recovery Characteristic
©2015 Fairchild Semiconductor Corporation
FDPC8014AS Rev.1.0
10
10
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FDPC8014AS PowerTrench® Power Clip
Typical Characteristics (continued)
5.00
4.56
4.20
5.10
4.90
0.10 C
2X
PKG
CL
4
A
1.27
4
B
2
3
1
3.30
1
2.48
2.08
1.01
6.60
PKG
0.00
6.10
5.90
CL
0.40
2.65
0.83
1.43
1.98
2.48
0.82
3.30
6
5
2X
7
8
0.75
TOP VIEW
1.53
1.01
SEE
DETAIL A
1.08
1.48
1.53
2.29
8
0.10 C
0.00
PIN #1
INDICATOR
5
RECOMMENDED LAND PATTERN
SIDE VIEW
0.10
0.05
3.15±.05
C A B
C
3.81
1.27
0.51
5
7
6
8
1.57±.05
0.65±.05
NOTES: UNLESS OTHERWISE SPECIFIED
0.65±.05
2.46±.05
1.37±.05
0.53±.05
0.91±.05
0.49±.05
0.48±.05
4
3
2
1
0.51±.05
3.90±.05
4.22±.05
5.00±.05
BOTTOM VIEW
A) DOES NOT FULLY CONFORM TO
JEDEC REGISTRATION, MO-229,
DATED 11/2001.
B) ALL DIMENSIONS ARE IN
MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE
BURRS OR MOLD FLASH. MOLD
FLASH OR BURRS DOES NOT
EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING
PER ASME Y14.5M-1994.
E) DRAWING FILE NAME: PQFN08KREV2
0.10 C
0.08 C
0.80
0.70
0.30
0.20
(SCALE: 2X)
0.05
0.00
C
SEATING
PLANE
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
F-PFS
FRFET®
SM
Global Power Resource
GreenBridge
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
Making Small Speakers Sound Louder
and Better™
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
MotionGrid®
MTi®
MTx®
MVN®
mWSaver®
OptoHiT
OPTOLOGIC®
AccuPower
AttitudeEngine™
Awinda®
AX-CAP®*
BitSiC
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax
ESBC
®
®
Fairchild
Fairchild Semiconductor®
FACT Quiet Series
FACT®
FastvCore
FETBench
FPS
OPTOPLANAR®
®
Power Supply WebDesigner
PowerTrench®
PowerXS™
Programmable Active Droop
QFET®
QS
Quiet Series
RapidConfigure

Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM®
STEALTH
SuperFET®
SuperSOT-3
SuperSOT-6
SuperSOT-8
SupreMOS®
SyncFET
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc
TinyLogic®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault Detect
TRUECURRENT®*
SerDes
UHC®
Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlus
XS™
Xsens™
仙童®
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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AUTHORIZED USE
Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary
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ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Terms of Use
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I77
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