FCP190N60E MOSFET Bare Die

advertisement
FCP190N60E
N-Channel Charge Balance Mosfet Chip
600V, 20.6A, 190mΩ1
Part
V(BR)DSS
FCP190N60E
IDn
600V
RDS(on) Max
20.6A
190mΩ
1
Die Size
3.5 x 5.3 mm
2
See page 2 for ordering part numbers & supply formats
Features
Applications
•
High density AC / DC Converters
•
High Power & Current Handling Capability
•
Solar Inverters
•
Low RDS (on) per mm2
Maximum Ratings
•
Ultra low Gate Charge
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
600
V
VGSS
Gate to Source Voltage
ID
Drain Current
2
Drain Current3
IDM
TJ, TSTG
EAS
±20
-AC (f>1Hz)
±30
Continuous (TC = 25°C)
20.6
Continuous (TC = 100°C)
13.1
Pulsed
61.8
Operation Junction & Storage Temperature
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
dv/dt
-DC
MOSFET dv/dt
4
4
V
A
-55 to 150
°C
IAS=4A, VDD= 50V, RG=25Ω , Starting @ TJ =25°C
400
mJ
ISD≤10A,di/dt≤200A/µs, VDD≤BVDSS, Start @ TJ=25°C
20
V/ns
100
V/ns
4
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 10mA, VGS = 0V
600
-
-
V
VGS(th)
Gate threshold Voltage
VGS = VDS, ID =250µA
2.5
-
3.5
V
IDSS
Zero Gate Voltage Drain Current
VDS = 480V, VGS = 0V
-
-
1
µA
IDSS
Zero Gate Voltage Drain Current
VDS = 480V, TC = 125°C
-
-
10
µA
IGSS
Gate to Body Leakage Current
VGS = ±20V , VDS = 0V
-
-
±100
µA
VGS = 10V, ID = 10A
-
160
190
mΩ
RDS(on)
Static Drain to Source On Resistance
1.
2.
3.
1
Notes:
Defined by chip design, not subject to 100% production test at wafer level
Performance will vary based on assembly technique and substrate choice
Repetitive Rating: Pulse width limited by maximum junction temperature
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page1
Static Characteristics, TJ = 25° unless otherwise noted
Dynamic Characteristics4, TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
gFS
Forward Transconductance
VDS = 20V, ID = 10A
-
20
-
S
ESR
Equivalent Series Resistance (G-S)
f = 1Mhz
-
5
-
Ω
Ciss
Input Capacitance
-
2385
3175
pF
VDS =25V, VGS = 0V
f = 1MHz
-
1795
2396
pF
-
110
165
pF
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS =380V, VGS = 0V
f = 1MHz
-
42
-
pF
Effective Output Capacitance
VDS =0V to 480V,
VGS = 0V
-
178
-
pF
-
63
82
nC
-
10
-
nC
-
24
-
nC
Coss.
eff.
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS =380V, ID = 10A
5
VGS = 10V
Switching Characteristics4, TJ = 25°C unless otherwise noted
Symbol
Parameter
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Test Conditions
VDD = 380V, ID = 10A
5
VGS = 10V RGEN = 4.7Ω
Min
Typ
Max
Units
-
23
56
ns
-
14
38
ns
-
101
212
ns
-
15
40
Ns
Min
Typ
Max
Units
Drain-Source Diode Characteristics4, TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
20.2
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
60.6
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 10A
-
-
1.2
V
trr
Reverse Recovery Time
-
308
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 10A
dIF/dt = 100A/μs
-
4.8
-
µC
4.
5.
Notes:
Characterised by design & tested at component level, not subject to production test at wafer level
Essentially independent of Operating Temperature Typical Characteristics
Part Number
Format
Detail / Drawing
FCP190N60EMW
Un-sawn wafer, electrical rejects inked
Page 3
FCP190N60EMF
Sawn wafer on film-frame
Page 4
FCP190N60EMD
Singulated die / chips in waffle pack
Page 4
Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page2
Ordering Guide
Die Drawing
Mechanical Data
Parameter
Units
Chip Dimensions Un-sawn
5280 x 3530
µm
Chip Thickness (Nominal)
300
µm
Gate Pad Size
360 x 470
µm
Wafer Diameter
150 (subject to change)
mm
Saw Street
80 (subject to change)
µm
Wafer orientation on frame
Wafer notch parallel with frame flat
Topside Metallisation & Thickness
Al
4
µm
Backside Metallisation & Thickness
V/Ni/Ag
0.3
µm
Silicon Nitride
Recommended Die Attach Material
Soft Solder or Conductive Epoxy
Recommended Wire Bond - Gate
Al 125µm X1
Recommended Wire Bond – Source
Al 380µm X2
Page3
Topside Passivation
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Sawn Wafer on Film-Frame – Dimensions (inches)
Die in Waffle Pack – Dimensions (mm)
A
X
X = 3.81mm ±0.13mm pocket size
Y = 6.32mm ±0.13mm pocket size
Z = 0.61mm ±0.08mm pocket depth
A = 5° ±1/2° pocket draft angle
No Cross Slots
Array = 7 X 5 (35)
Y
Z
X
OVERALL TRAY SIZE
Size = 50.67mm ±0.25mm
Height = 3.94mm ±0.13mm
Flatness = 0.30mm
DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO
RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS
GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION.
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR
DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY
ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND
CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS
WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
(a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use
provided in the labelling, can be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page4
1. Life support devices or systems are devices or systems which,
Download