MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M54585KP is eight-circuit Darlington transistor arrays with
clamping diodes. The circuits are made of NPN transistors.
Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
PIN CONFIGURATION
NC
1
20
19 →O1
IN2→ 3
18 →O2
IN3→ 4
17 →O3
IN4→ 5
16 →O4
IN5→ 6
15 →O5
IN6→ 7
14 →O6
INPUT
FEATURES
● High breakdown voltage (BVCEO ≥ 50V)
● High-current driving (IC(max) = 500mA)
● With clamping diodes
● Driving available with TTL output or with PMOS IC output
● With shrink small outline package
NC
IN1→ 2
IN7→ 8
13 →O7
IN8 → 9
12 →O8
GND
OUTPUT
11 →COM COMMON
10
NC : No connection
Package type 20P2E-A
CIRCUIT DIAGRAM
COM
APPLICATION
Drives of relays and printers, digit drives of indication elements such as LEDs and lamps, and MOS-bipolar logic IC
interfaces
OUTPUT
2.7k
INPUT
7.2k
3k
FUNCTION
The M54585KP has eight circuits, which are NPN Darlington
transistors. Input transistors have resistance of 2.7kΩ between the base and input pin. A spike-killer clamping diode
is provided between each output pin and GND. Output transistor emitters are all connected to the GND pin.
Collector current is 500mA maximum. The maximum collector-emitter voltage is 50V.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75°C)
Parameter
Collector-emitter voltage
Collector current
Conditions
Output, H
Current per circuit output, L
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
GND
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
500
–0.5 ~ +30
500
50
0.68
–20 ~ +75
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Limits
Parameter
VO
Output voltage
Collector current
(Current per 1 cir- Duty Cycle ≤ 10%
cuit when 8 circuits
are coming on siDuty Cycle ≤ 50%
multaneously)
Ic ≤ 400mA
“H” input voltage
Ic ≤ 200mA
“L” input voltage
IC
VIH
VIL
Unit
min
0
typ
—
max
50
0
—
200
0
—
70
3.85
3.4
—
30
30
V
V
0.6
V
V
mA
0
—
—
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
VCE(sat)
II
VF
IR
h FE
Test conditions
ICEO = 100µA
VI = 3.85V, IC = 400mA
Collector-emitter saturation voltage
VI = 3.4V, I C = 200mA
II = 3.85V
Input current
VI = 25V
Clamping diode forward voltage
IF = 400mA
Clamping diode reverse current
VR = 50V
DC amplification factor
VCE = 4V, I C = 350mA, Ta = 25°C
min
Limits
typ+
max
50
—
—
—
—
—
—
1.3
1.0
0.95
8.7
1.5
—
2.4
1.6
1.8
18
2.4
—
1000
—
2500
100
—
Unit
V
V
mA
V
µA
—
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Limits
Test conditions
min
CL = 15pF (note 1)
typ
max
—
12
—
—
240
—
Unit
ns
ns
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
Vo
50%
Measured device
50%
INPUT
RL
OPEN
PG
OUTPUT
OUTPUT
50Ω
CL
50%
50%
ton
toff
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω,
VI = 3.85V
(2)Input-output conditions : RL = 25Ω, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
500
1.0
0.68
0.6
0.408
0.4
0.2
0
Collector current Ic (mA)
Collector current Ic (mA)
0.8
0
25
50
75
400
300
200
Ta = 25°C
100
0
100
0
400
1
300
2.0
2
200
3
4
5
6
7
8
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
0
20
40
•Ta = 25°C
60
1
200
2
100
0
100
80
300
0
20
40
60
80
100
Duty cycle (%)
DC Amplification Factor
Collector Current Characteristics
104
3
45
67
8
•The collector current
values represent the current
per circuit. •Repeated frequency ≥ 10Hz
•The value in the circle represents the value of the simultaneously-operated circuit.
•Ta = 75°C
Duty cycle (%)
Grounded Emitter Transfer Characteristics
500
VCE = 4V
VCE = 4V
Ta = 75°C
3
2
103
Ta = –20°C
7
5
Ta = 25°C
3
2
102
101
2
3
5 7 102
2
3
Collector current Ic (mA)
5 7 103
Collector current Ic (mA)
DC amplification factor hFE
1.5
Duty Cycle-Collector Characteristics
400
7
5
1.0
Duty Cycle-Collector Characteristics
500
0
0.5
Output saturation voltage VCE(sat) (V)
500
100
Ta = –20°C
Ta = 75°C
Ambient temperature Ta (°C)
Collector current Ic (mA)
Power dissipation Pd (W)
VI = 3.4V
400
300
200
Ta = 75°C
Ta = 25°C
100
0
Ta = –20°C
0
1
2
3
4
Input voltage VI (V)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Input Characteristics
Clamping Diode Characteristics
500
10
Forward bias current IF (mA)
Ta = –20°C
Input current II (mA)
8
6
Ta = 25°C
Ta = 75°C
4
2
0
0
5
10
15
Input voltage VI (V)
20
25
400
300
200
Ta = 25°C
100
Ta = –20°C
Ta = 75°C
0
0
0.5
1.0
1.5
2.0
Forward bias voltage VF (V)
Jan. 2000