MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
PIN CONFIGURATION
COMMON COM
1
16
14 ←IN4 INPUT4
INPUT1 IN1→ 3
 4
GND 
 5
13 
 GND
12 
11 ←IN3 INPUT3
INPUT2 IN2→ 6
FEATURES
Á High breakdown voltage (BV CEO ≥ 50V)
Á High-current driving (Ic(max) = 1.5A)
Á With clamping diodes
Á Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and power amplification
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
IC
8
9
16P4(P)
Package type 16P2N-A(FP)
NC
NC : No connection
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
FUNCTION
The M54532P and M54532FP each have four circuits consisting of NPN Darlington transistors. They have resistance
of 340Ω between input transistor bases and input pins. A
clamping diode is provided between each output pin (collector) and COM pin. The output transistor emitters are all connected to the GND pin.
The collector current is 1.5A maximum. Collector-emitter
supply voltage is 50V maximum.
The M54532FP is enclosed in a molded small flat package,
enabling space-saving design.
10 →O3 OUTPUT3
OUTPUT2 O2← 7
COMMON COM
NC
15 →O4 OUTPUT4
OUTPUT1 O1← 2
340
5.5K
3K
GND
The four circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Parameter
Collector-emitter voltage
VI
Collector current
Input voltage
VR
Clamping diode reverse voltage
IF
Clamping diode forward current
Pd
Power dissipation
Topr
Tstg
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ratings
–0.5 ~ +50
1.5
–0.5 ~ +10
Pulse Width ≤ 10ms, Duty Cycle ≤ 5%
Pulse Width ≤ 100ms, Duty Cycle ≥ 5%
Ta = 25°C, when mounted on board
50
1.5
1.25
1.92(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Unit
V
A
V
V
A
W
°C
°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol
VO
Parameter
Output voltage
Collector current
(Current per 1 circuit when 4 circuits
are coming on simultaneously)
IC
VIH
VIL
(Unless otherwise noted, Ta = –20 ~ +75°C)
Duty Cycle
P : no more than 4%
FP : no more than 2%
Duty Cycle
P : no more than 18%
FP : no more than 9%
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
VCE (sat)
Collector-emitter saturation voltage
II
h FE
0
—
50
0
—
1.25
0
—
0.7
3
0
—
—
6
V
0.4
V
max
Unit
V
(Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
IR
VF
Limits
typ
A
“H” input voltage
“L” input voltage
ELECTRICAL CHARACTERISTICS
min
Limits
Test conditions
typ+
—
1.3
max
—
2.2
Unit
ICEO = 100µA
II = 2mA, IC = 1.25A
min
50
—
Input current
Clamping diode reverse current
II = 2mA, IC = 0.7A
VI = 3V
—
—
1.1
5
1.7
8.5
mA
VR = 50V
—
—
100
µA
Clamping diode forward voltage
DC amplification factor
IF = 1.25A
VCE = 4V, IC = 1A, Ta = 25°C
—
800
1.6
7000
2.3
—
V
—
V
V
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Limits
Test conditions
CL = 15pF (note 1)
NOTE 1 TEST CIRCUIT
min
—
typ
10
max
—
—
500
—
Unit
ns
ns
TIMING DIAGRAM
INPUT
VO
50%
Measured device
50%
INPUT
RL
OPEN
OUTPUT
PG
OUTPUT
50Ω
CL
50%
ton
50%
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VP = 3VP-P
(2) Input-output conditions : RL = 8.3Ω, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
2.0
2.0
II = 2mA
Collector current Ic (A)
Power dissipation Pd (W)
M54532P
1.5
M54532FP
1.0
0.5
0
25
50
75
Ta = 25°C
0.5
0
100
Ta = –20°C
➁
➂
➃
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
20
40
60
80
2.0
1.5
1.0
➀
0.5
➁
➂
➃
0
100
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
0
20
40
60
80
Duty cycle (%)
Duty cycle (%)
Duty-Cycle-Collector Characteristics
(M54532FP)
Duty-Cycle-Collector Characteristics
(M54532FP)
1.5
1.0
➀
0.5
➁
➂
➃
20
40
60
Duty cycle (%)
80
100
2.0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
100
Collector current Ic (A)
2.0
0
Collector current Ic (A)
➀
0
1.5
Duty-Cycle-Collector Characteristics
(M54532P)
2.0
0.5
1.0
Duty-Cycle-Collector Characteristics
(M54532P)
1.0
0
0.5
Output saturation voltage VCE (sat) (V)
1.5
0
0
Ambient temperature Ta (°C)
2.0
Collector current Ic (A)
1.0
Ta = 75°C
0
Collector current Ic (A)
1.5
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
1.5
1.0
0.5
0
➀
➁
➂
➃
0
20
40
60
80
100
Duty cycle (%)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DC Amplification Factor
Collector Current Characteristics
105
7
5
VCE = 4V
VCE = 4V
3
2
Ta = 75°C
104
7
5
Ta = 25°C
3
2
Ta = –20°C
103
7
5
Collector current Ic (A)
DC amplification factor hFE
Grounded Emitter Transfer Characteristics
1.6
1.2
0.8
Ta = 75°C
Ta = 25°C
0.4
Ta = –20°C
3
2
102 1
10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
0
0
1.0
1.5
2.0
Input voltage VI (V)
Collector current Ic (mA)
Clamping Diode Characteristics
Input Characteristics
2.0
25
Forward bias current IF (A)
Ta = 25°C
20
Input current II (mA)
0.5
Ta = –20°C
15
Ta = 75°C
10
5
1.5
1.0
Ta = 25°C
0.5
Ta = 75°C
Ta = –20°C
0
0
2
4
6
Input voltage VI (V)
8
10
0
0
0.5
1.0
1.5
2.0
Forward bias voltage VF (V)
Aug. 1999