SSF1006
100V N-Channel MOSFET
Main Product Characteristics
VDSS
RDS(on)
100V
4.6mΩ (typ.)
ID
200A ①
TO-220
Features and Benefits
Marking and Pin
Assignment
Schematic Diagram
Advanced MOSFET process technology
Ideal for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175°C operating temperature
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Description
The SSF1006 utilizes the latest processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating. These features make this device extremely
efficient and reliable device for use in power switching applications and a wide variety of other
applications.
Absolute Max Ratings
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
200 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
130 ①
IDM
Pulsed Drain Current ②
800
Power Dissipation ③
326
W
Linear Derating Factor
2.2
W/°C
VDS
Drain-Source Voltage
100
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
614
mJ
IAS
Avalanche Current @ L=0.3mH
64
A
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to +175
°C
PD @TC = 25°C
1/7
Units
A
SSF1006
100V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-Case ③
—
0.46
°C/W
Junction-to-Ambient (t ≤ 10s)④
—
62
°C/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
°C/W
Electrical Characteristics @TA=25°C unless otherwise specified
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
RDS(on)
Static Drain-to-Source On-resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Typ.
Max.
Units
V
Conditions
100
—
—
—
4.6
6
—
9.23
—
2
—
4
—
2.22
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total Gate Charge
—
242
—
Qgs
Gate-to-Source Charge
—
48
—
Qgd
Gate-to-Drain("Miller") Charge
—
79
—
VGS = 10V
td(on)
Turn-on Delay Time
—
30
—
VGS=10V, VDS =30V,
tr
Rise Time
—
24
—
td(off)
Turn-Off Delay Time
—
115
—
tf
Fall Time
—
43
—
ID =30A
Ciss
Input Capacitance
—
9807
—
VGS = 0V
Coss
Output Capacitance
—
672
—
Crss
Reverse Transfer Capacitance
—
583
—
mΩ
V
μA
nA
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS = 100V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 30A,
nC
nS
pF
VDS=30V,
RL=15Ω,
RGEN=2.5Ω
VDS = 25V
ƒ =500KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
200
A
—
—
800
A
Conditions
MOSFET symbol
showing
the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.88
1.3
V
IS=60A, VGS=0V
trr
Reverse Recovery Time
—
46
—
ns
TJ = 25°C, IF =75A, di/dt =
Qrr
Reverse Recovery Charge
—
88
—
nC
100A/μs
2/7
SSF1006
100V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max junction temperature.
③The power dissipation PD is based on max junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
3/7
SSF1006
100V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to Source Cut-off Voltage
Figure 1. Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Figure 4. Normalized On-Resistance Vs. Case
Temperature
Temperature
4/7
SSF1006
100V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6. Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Case Temperature
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5/7
SSF1006
100V N-Channel MOSFET
Mechanical Data
TO-220 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
b1
b2
C
D
D1
D2
E
E1
ФP
ФP1
e
e1
L
L1
L2
L3
Dimensions In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.240
2.340
2.440
1.270
1.270
1.370
1.470
0.750
0.800
0.850
0.480
0.500
0.520
15.100
15.400
15.700
8.800
8.900
9.000
2.730
2.800
2.870
9.900
10.000
10.100
8.700
3.570
3.600
3.630
1.400
1.500
1.600
2.54BSC
5.08BSC
13.150
13.360
13.570
7.35REF
Dimensions In Inches
Nom
Max
0.179
0.185
0.051
0.052
0.092
0.096
0.050
0.054
0.058
0.031
0.033
0.020
0.021
0.606
0.618
0.350
0.354
0.110
0.113
0.394
0.398
0.343
0.142
0.143
0.059
0.063
0.1BSC
0.2BSC
0.518
0.526
0.534
0.29REF
Min
0.173
0.050
0.088
0.050
0.030
0.019
0.594
0.346
0.107
0.390
0.141
0.055
2.900
1.650
3.000
1.750
3.100
1.850
0.114
0.065
0.118
0.069
0.122
0.073
L4
Q1
0.900
1.000
1.100
0.035
0.039
0.043
50
70
90
50
70
90
Q2
Q3
50
50
70
70
90
90
50
50
70
70
90
90
Q4
10
30
50
10
30
50
6/7
SSF1006
100V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF1006
Package (Available)
TO-220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
TO-220
50
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
www.goodarksemi.com
Tj=125°C to 175°C
@ 80% of Max
VDSS/VCES/VR
Tj=150°C or 175°C
@ 100% of Max VGSS
Units/Inner Inner
Box
Boxes/Carton
Box
1000
10
Duration
Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
168 hours
500 hours
1000 hours
7/7
Units/Carton
Box
10000
3 lots x 77 devices
Doc.USSSF1006x2.3