<£E,ml-(2on
, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N6763, 2N6764
N-Channel Enhancement-Mode
Power MOS Field-Effect Transistors
3lAand38A, 60V-100V
r0s(on) = 0.08 O and 0.055 0
N-CHANNEL ENHANCEMENT MODE
Features:
• SOA is power-dissipation limited
• Nanosecond switching speeds
• Linear transfer characteristics
• High input Impedance
• Majority carrier device
92CS- 33741
TERMINAL DIAGRAM
The 2N6763 and 2N6764 are n-channel enhancement-mode
silicon-gate power MOS field-effect transistors designed
for applications such as switching regulators, switching
converters, motor drivers, relay driver;:, and drivers for
high-power bipolar switching transistors requiring high
speed and low gate-drive power. These types can be
operated directly from integrated circuits.
TERMINAL DESIGNATION
MAXIMUM RATINGS, Absolute-Maximum Values:
' DRAIN-SOURCE VOLTAGE. Vw
' DRAIN-GATE VOLTAGE. Voa. (Roi = 20 fcfl)
' GATE-SOURCE VOLTAGE, VM
DRAIN CURRENT, I0, RMS Continuous
DRAIN CURRENT. IDM, Pulsed
................................
POWER DISSIPATION, PT
At Tc = 25' C
............................................
AtT c = 100"C
............................................
Above Tc - 25° C. Derate Linearly
.........................
INDUCTIVE CURRENT, lt«, Clamped (L •••- 100 ^H)
.............
OPERATING AND STORAGE TEMPERATURE, T,, T.,B
.........
LEAD TEMPERATURE, Tc.
At distance! 0.063 in. (1.6 mm) from seating plane for 10 s max.
2N4763
2N67M
60
60
100
100
V
V
V
38
24
70
A
A
A
.±20 .
31
20
60
150 .
.60 . 1.2 .
60
70
„ -55 to+150
W
W
W/°C
A
°C
. 300
'JEDEC registered data.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
2N6763, 2N6764
ELECTRICAL CHARACTERISTICS © Tc • 26" C (Unton OtlMfwtt*} Specified)
ftrtHIKH
&VOSS
Drlin - Sowm Brwkdcwm VoltlBi
vGS(th)
Giw Thrrtiold Voltljl
1yp«
Win.
TVP.
Mn.
2NS763
60
-
Uniti
V
2N«7«4
100
-
-
V
IQ - 1 ,0 mA
ALL
2.0'
-
4.0'
V
VDS-V O S , l D - l m A
THt CoAdttiom
VGS-«
'OSSF
G>n
~8odV Lnhigl Foivwd
JILL
-
nA
VGS - 20V
Q<"
- §odv LMkijl R«wn»
ALL
-
-
100'
'GSSR
1 CO-
nA
VQS - -20V
'OSS
Z"Q G"*
-
0.1
LO"
rnA
VDS - M». Rning, Voj - 0
-
0.2
4.0-
mA
Vug . M,«. R«in«. VG$ • 0. Tc - 125°C
2NB763
-
-
2.48'
V
2NB764
-
-
2.09-
V
V GS -10V, I D -38A
2N«7«3
-
o.oa
0.08'
n
VGS - 10V, lo - ZOA
2NS764
-
0.045
0.056'
-
-
0.136-
2NS784
-
-
0.094*
n
n
n
VGS • 10V. ID • 24A
2NB7B3
V(>S= 15V, I D - 2 4 A
vOS(onl
Vol«t» D'«'" Currant
Slit* Driin-Sourw On-Stiti
"oS(on) Swtic Drtin-Sourw On*SUtt«
Rnlltintil ^7}
RDSIon)
Stltie Oriin-Sourot On-Stit*
ALL
jfi
Fonwd TrinKonducWKt Q
ALL
9.0"
12.5
27-
SIUI
C|H
Input Cipicitinci
ALL
1000-
2000
3000-
of
^OM
Output C«p*cilinci
ALL
500*
1000
isoo-
pp
C^
R«vMf« Tr«nif«r CcpKJMnc*
ALL
150'
350
500-
pf
T«fn-0n D«l«v Tirrw
ALL
_
'd lonl
I,
ftiM
Tim«
ALL
VGS-'0VI0-31A
VQS - 10V, ID - 30A. TC - 12S°C
VGS - 10V, ID - S4A. Tc > 12S°C
VGS
• 0, VDS • 25 V, t • 1 .0 MH1
Swf»«. 10
-
36-
n»
VOD a MV. ID - 24A. Z0 = 4 70
-
100-
m
(SwRgi. 13wd14l
n«
(MOSFET mitehin) tiirm trt nwoidiy
n
inOWtridtnt ol O0*r«in« nniMriluri.l
'd (til}
Tuni-OII D«I»Y Tim»
ALL
-
-
t,
Fill TiifH
ALL
L_^__
-
125100-
THERMAL RESISTANCE
nlhJC
Junction-to-Ctt*
ALL
-
-
0.83*
R^^S
CaH-to-Sinh
ALL
-
0.1
-
RthjA
junclion-to-AmbJ«nt
ALL
-
-
30
•c/w
•c/w
•c/w
Mounting wrlm flit, tmoolh. >ntl gruHd.
Fri« Air Opvntion
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
1$
Cofttimjoui Sourc* Cwrrtnt
(Body Diod.l
*SM
PulMd Scurci Currant
IBodv Diod.l
Vso
Diodi Forward Volugl Q
2N6763
2N»764
2N8763
2N0764
-
-
313860
70
2NS763
2N3764
0.9O0.95-
-
1.8*
V
T C »25°C.I S - 31A.V Q S -0
Tc . 25"C. ls - 38A. VOS - 0
A
Modifiid MOSFET lymtel
ihowin* thi inugnl
A
/1 1— G»4S
D
)
s
-
1.9-
V
trr
RVVVTH ft*eov*ry Tim*
tLL
-
500
-
ni
TJ * i$o°c, if • ISM, aif/ai • too A/MI
QnR
R*vw fticowld Chirac
ALL
-
10
-
uC
Tj - 160°C, I F - ISM. alF/ai- 100 A/wi
•JtDECr««iitir*dvilu«
0
PulMTnt: Puitt Width < 300 WMC, Duty Cyell < 2»