SSF1109
110V N-Channel MOSFET
Main Product Characteristics
VDSS
R DS(on)
ID
110V
6.7mΩ(typ.)
130A
TO-220
Marking and Pin
Assignment
Schematic Diagram
Features and Benefits
Advanced trench MOSFET process technology
Ideal for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175°C operating temperature
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Description
The SSF1109 utilizes the latest processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating. These features make this device extremely
efficient and reliable device for use in power switching applications and a wide variety of other
applications.
Absolute Max Ratings
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
130
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
91
IDM
Pulsed Drain Current②
520
Power Dissipation③
258
W
Linear Derating Factor
1.72
W/°C
VDS
Drain-Source Voltage
110
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
735
mJ
IAS
Avalanche Current @ L=0.3mH
75
A
TJ, T STG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
PD @TC = 25°C
1/7
Units
A
SSF1109
110V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-Case③
—
0.58
°C/W
Junction-to-Ambient (t ≤ 10s) ④
—
62
°C/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
°C/W
Electrical Characteristics (TA=25°C unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
RDS(on)
Static Drain-to-Source On-resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Typ.
Max.
Units
V
Conditions
110
—
—
—
6.7
9
—
12.2
—
2
—
4
—
2.0
—
—
—
1
—
—
50
— — 100
-100 — —
Total Gate Charge
— 243
—
Qgs
Gate-to-Source Charge
— 48
—
Qgd
Gate-to-Drain("Miller") Charge
— 92
—
VGS = 10V
td(on)
Turn-on Delay Time
— 29
—
VGS=10V, VDS=64.3V,
tr
Rise Time
— 108
—
td(off)
Turn-Off Delay Time
— 123
—
tf
Fall Time
— 120
—
Ciss
Input Capacitance
— 8456
—
Coss
Output Capacitance
— 454
—
Crss
Reverse Transfer Capacitance
— 417
—
mΩ
V
μA
nA
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS = 110V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 75A,
nC
ns
VDS=50V,
ID=75A
RGEN=2.7Ω
RL=0.875Ω
VGS = 0V
pF
VDS = 50V
ƒ = 500KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
130
A
—
—
520
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.93
1.3
V
IS=35A, VGS=0V
trr
Reverse Recovery Time
—
57
—
ns
TJ = 25°C, IF =75A, di/dt =
Qrr
Reverse Recovery Charge
—
156
—
nC
100A/μs
2/7
SSF1109
110V N-Channel MOSFET
Test Circuits and Waveforms
Switching Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
3/7
SSF1109
110V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to Source Cut‐off Voltage
Figure 1. Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage vs.
Figure 4. Normalized On-Resistance Vs. Case
Temperature
Temperature
4/7
SSF1109
110V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6. Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5/7
SSF1109
110V N-Channel MOSFET
Mechanical Data
TO-220 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
b2
c
D
D1
DEP
E
E1
ФP1
e
e1
H1
L
L1
L2
ФP
Q
Q1
□1
□2
Dimensions In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.590
2.690
2.790
0.770
0.900
1.230
1.360
0.480
0.500
0.520
15.100
15.400
15.700
9.000
9.100
9.200
0.050
0.285
0.520
10.060
10.160
10.260
8.700
1.400
1.500
1.600
2.54BSC
5.08BSC
6.100
6.300
6.500
12.750
12.960
13.170
3.950
1.85REF
3.570
3.600
3.630
2.730
2.800
2.870
0.200
-
50
10
70
30
90
50
6/7
Min
0.173
0.050
0.102
0.030
0.048
0.019
0.354
0.002
0.396
0.055
0.240
0.502
0.141
0.107
50
10
Dimensions In Inches
Nom
Max
0.179
0.185
0.051
0.052
0.106
0.110
0.035
0.054
0.020
0.020
0.606
0.358
0.362
0.011
0.020
0.400
0.404
0.343
0.059
0.063
0.1BSC
0.2BSC
0.248
0.256
0.510
0.519
0.156
0.073REF
0.142
0.143
0.110
0.113
0.008
-
70
30
90
50
SSF1109
110V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF1109
Package (Available)
TO-220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package Units/
Type
Tube
TO-220
Tubes/Inner
Box
50
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
www.goodarksemi.com
Units/Inner Inner
Box
Boxes/Carton
Box
1000
10
Duration
Sample Size
Tj=125°C to 175°C
@ 80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150°C or 175°C
@ 100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
7/7
Units/Carton
Box
10000
Doc.USSSF1109x1.0