CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6362-QXG is a three stage
monolithic GaAs high power circuit producing
2.5 Watt output power. It integrates a power
detector and allows gain control. ESD
protections are included.
It is designed for Point To Point Radio or
K-band Sat- Com application.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length.
It is supplied in RoHS compliant SMD
package.
Main Features
Power & PAE
■ Frequency range: 17.7- 19.7GHz
■ 34.5dBm saturated power
■ 42dBm OIP3
■ 22dB gain
■ DC bias: Vd = 6.0Volt @ Id = 1.34A
■ QFN5x6
■ MSL3
36
Power (dBm) & PAE (%)
34
32
30
Psat
P1dB
PAE sat
28
26
24
22
20
17
17.5
18
18.5
19
19.5
Frequency (GHz)
20
20.5
21
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq
Frequency range
Gain
Linear Gain
Psat
Saturated output power
OIP3
Output IP3
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
Min
17.7
Typ
Max
19.7
22
34.5
42
1/16
Unit
GHz
dB
dBm
dBm
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +6V
Symbol
Parameter
Fop
Operating frequency range
Gain
Small Signal Gain
Psat
Saturated Output Power
P1dB
Output power at 1dB compression
ΔG
Gain variation in temperature
OIP3
Output IP3
PAE
PAE at saturation
CG
Gain control range
NF
Noise Figure @ nominal gain
Rlin
Input Return Loss
Rlout
Output Return Loss
Detection dynamic range(for output
Dr
power detection up to Psat)
Vdetect
Voltage detection VREF- VDET up to Psat
Min
17.7
Typ
22
34.5
33
+/- 0.034
42
24
15
6
14
18
30
Max
19.7
Unit
GHz
dB
dBm
dBm
dB/°C
dBm
%
dB
dB
dB
dB
dB
10 to
mV
2400
Vg
DC gate Voltage
-0.85
V
Idet
Detector current
600
µA
Idq
Total drain current
1.34
A
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
2/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
6.5V
V
Id
Drain bias quiescent current
1700
mA
Vg
Gate bias voltage
-2 to 0
V
(2)
Pin
Maximum peak input power overdrive
+20
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1)
Operation of this device above anyone of these parameters may cause permanent
damage.
(2)
Thermal Resistance channel to ground paddle =9.4°C/W for Tamb. = +85°C with 6.0V &
1.34A.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pad No
VD1
7,20
VD2
5, 22
VD3
3, 24
VG1
8, 19
VG2
6, 21
VG3
4, 23
DC
1
Parameter
DC Drain voltage 1st stage
DC Drain voltage 2nd stage
DC Drain voltage 3rd stage
DC Gate voltage 1st stage
DC Gate voltage 2nd stage
DC Gate voltage 3rd stage
DC Detector voltage
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
3/16
Values
6.0
6.0
6.0
-0.85
-0.85
-0.85
6.0
Unit
V
V
V
V
V
V
V
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below the maximum value specified in the next table. So, the system PCB must be
designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintained below the maximum temperature specified (see the curve Pdiss. Max) in order to
guarantee the nominal device life time (MTTF).
DEVICE THERMAL SPECIFICATION : CHA6362-QXG
Recommended max. junction temperature (Tj max)
:
161
Junction temperature absolute maximum rating
:
175
Max. continuous dissipated power (Pdiss. Max.)
:
8.0
(1)
=> Pdiss. Max. derating above Tcase = 85
°C :
106
Junction-Case thermal resistance (Rth J-C)(2)
:
<9
Minimum Tcase operating temperature(3)
:
-40
Maximum Tcase operating temperature(3)
:
85
Minimum storage temperature
:
-55
Maximum storage temperature
:
150
°C
°C
W
mW/°C
°C/W
°C
°C
°C
°C
(1) Derating at junctio n temperature co nstant = Tj max.
(2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased.
(3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w).
9
7
6
5
4
3
2
Pdiss. Max. @Tj <Tj max (W)
-50
-25
0
25
50
75
1
100
125
150
0
175
Tcase
Pdiss. Max. @Tj <Tj max (W)
8
Example: QFN 16L 3x3
Location of temperature
reference point (Tcase)
on package's bottom side
Tcase (°C)
0
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
4/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
Typical Package Sij parameters
Tamb.= +25°C, Vd = +6V, Id = 1340mA
Freq
S11
PhS11
S12
(GHz)
(dB)
(°)
(dB)
2
-0.574
138.2
-69.730
3
-0.586
116.4
-71.295
4
-0.800
92.9
-67.912
5
-1.529
69.3
-67.363
6
-2.560
46.9
-75.436
7
-3.602
27.8
-77.305
8
-4.373
10.0
-71.044
9
-4.552
-10.7
-70.287
10
-4.861
-33.4
-64.902
11
-5.442
-58.0
-59.034
12
-6.287
-84.7
-55.548
13
-7.958
-114.9
-53.073
14
-11.029
-150.6
-51.146
15
-17.784
156.5
-49.783
16
-23.840
-0.7
-52.011
17
-23.099
-95.3
-69.142
18
-18.490
-41.9
-48.662
19
-13.720
-98.1
-48.815
20
-14.076
-144.8
-55.035
21
-21.429
139.5
-52.354
22
-23.910
-82.2
-52.463
23
-20.298
-134.1
-49.410
24
-22.738
-160.4
-44.421
25
-24.459
-130.3
-42.946
26
-15.259
-123.5
-42.193
27
-9.522
-153.5
-39.625
28
-5.994
169.3
-37.889
29
-4.229
133.3
-37.608
30
-3.265
98.8
-42.998
31
-3.166
63.5
-46.728
32
-3.575
23.0
-43.589
33
-5.455
-33.3
-36.975
34
-9.281
-117.7
-36.564
35
-11.673
148.3
-36.286
36
-17.418
81.0
-39.685
37
-15.018
-166.1
-39.708
38
-5.630
146.6
-40.348
39
-2.813
108.7
-40.075
40
-1.604
78.6
-40.391
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
PhS12
(°)
48.9
8.4
7.3
-13.8
-58.8
-53.6
-31.9
-25.5
-81.6
-121.7
164.0
123.0
88.9
43.4
6.4
-82.1
33.7
-30.0
-39.6
-12.4
-21.4
8.1
-20.7
-45.0
-61.1
-76.7
-112.4
-147.7
-171.2
-165.8
-143.3
-151.7
169.7
148.6
126.1
124.5
105.2
95.1
92.6
5/16
S21
(dB)
-84.916
-68.140
-68.464
-69.051
-70.542
-87.120
-68.044
-66.322
-47.924
-30.585
-12.854
-5.223
2.560
11.830
19.708
23.643
23.276
22.439
23.090
23.517
20.350
14.758
8.300
0.616
-9.132
-29.329
-40.918
-38.621
-42.716
-44.087
-41.232
-37.377
-36.801
-36.974
-38.767
-39.563
-39.554
-41.444
-40.769
PhS21
(°)
124.6
26.1
6.9
-23.8
-61.5
-86.8
-88.5
-159.8
108.6
28.0
-92.5
132.2
27.0
-87.5
136.0
-8.9
-145.3
96.8
-16.3
-146.1
73.4
-55.6
179.4
53.2
-88.0
146.6
-103.0
-146.8
-172.7
-152.8
-134.2
-158.2
169.2
146.3
120.5
129.8
97.7
107.1
84.2
S22
(dB)
-0.454
-0.467
-0.724
-1.493
-2.241
-3.082
-3.609
-3.885
-4.371
-5.064
-6.923
-10.222
-16.984
-18.626
-16.116
-17.738
-29.078
-23.463
-26.826
-21.096
-20.968
-21.910
-21.053
-20.130
-19.493
-20.365
-16.120
-12.399
-9.795
-8.716
-8.158
-7.055
-7.727
-12.787
-4.760
-2.929
-1.583
-1.082
-0.779
PhS22
(°)
132.3
107.8
81.2
55.2
30.6
7.1
-14.4
-39.7
-67.7
-99.5
-136.8
-175.4
157.0
173.3
136.3
82.9
52.4
57.1
25.3
28.4
-37.7
-59.1
-94.3
-132.3
-176.1
171.3
154.1
121.3
76.5
17.6
-57.1
-139.3
149.3
-171.1
139.5
115.9
89.6
67.4
47.7
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
Typical board Measurements
Tamb.= +25°C, Vd = +6V, Id = 1340mA
Measurement in the plan of the QFN, using the proposed land pattern & board, as defined in
paragraph “Evaluation mother board”
S parameters versus Frequency
24
20
16
12
Sij (dB)
8
4
0
-4
S21
S11
S22
-8
-12
-16
-20
-24
14
15
16
17
18
19
20
Frequency (GHz)
21
22
23
24
Linear Gain & current versus Gate Voltage
24
1.4
22
20
1.2
18
1
Gain (dB)
14
12
0.8
10
8
0.6
6
4
Drain current (A)
16
0.4
2
17.7GHz
0
19.7GHz
Id
0.2
-2
-4
-1.5
-1.4
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
-1.3
-1.2
-1.1
Gate Voltage (V)
6/16
-1
-0.9
0
-0.8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +6V, Id = 1340mA
Output power and PAE versus Frequency
35
34
33
32
Power (dBm) & PAE (%)
31
30
29
Psat
28
P1dB
PAE sat
27
26
25
24
23
22
21
20
17
17.5
18
18.5
19
19.5
20
20.5
21
Frequency (GHz)
35
0
30
Phase Gain Compression (°)
Amplitude Gain Compression (dB)
Amplitude & Phase variation versus Output Power
1
-1
-2
-3
-4
17.7 GHz
-5
18.7 GHz
19.7 GHz
-6
2
6
10
14
18
22
26
30
17.7 GHz
25
19.7 GHz
20
15
10
5
0
-5
34
2
6
10
Output Power (dBm)
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
18.7 GHz
14
18
22
26
30
34
Output Power (dBm)
7/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
Typical board Measurements
Tamb.= +25°C, Vd = +6V, Id = 1340mA
Power Detector versus Pout &
Temperature
Power Detector versus Pout & Frequency
10
10
18.7GHz
19.7GHz
-40 C
1
Vref - Vdet (V)
Vref - Vdet (V)
17.7GHz
0.1
25 C
85 C
1
0.1
0.01
0.01
0
4
8
12
16
20
Output power (dBm)
24
28
0
32
4
8
12
16
20
Output power (dBm)
24
28
32
Return Losses versus Gain Control
0
-2
-4
-6
Return loss (dB)
-8
S11 at max. gain
S22 at max. gain
S11 vs Vg
S22 vs Vg
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
17.5
18
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
18.5
19
Frequency (GHz)
8/16
19.5
20
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
Typical board Measurements
Tamb.= +25°C, Vd = +6V, Id = 1340mA
Linear Gain versus Frequency & Temperature
30
28
26
24
Gain (dB)
22
20
18
16
14
-40 C
12
25 C
85 C
10
14
15
16
17
18
19
20
Frequency (GHz)
Input return loss versus Temperature
22
23
24
Output return loss versus Temperature
0
0
-5
-5
-40 C
25 C
85 C
Output return loss (dB)
Input return loss (dB)
21
-10
-15
-20
-25
-30
-40 C
25 C
85 C
-10
-15
-20
-25
-30
14
15
16
17
18
19
20
21
22
23
24
14
15
16
Frequency (GHz)
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
17
18
19
20
21
22
23
24
Frequency (GHz)
9/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +6V, Id = 1340mA
Saturated Power versus Temperature
36
36
35
35
34
34
Saturated Power (dBm)
Power at 1dB (dBm)
Power at 1dB compression versus
Temperature
33
32
31
-40 C
30
25 C
85 C
29
33
32
31
-40 C
25 C
85 C
30
29
28
28
17
18
19
Frequency (GHz)
20
17
21
18
19
Frequency (GHz)
20
21
Noise Figure versus Frequency & Temperature
10
9
Noise figure (dB)
8
7
6
5
4
85 C
3
25 C
-40 C
2
16
17
18
19
20
21
Frequency (GHz)
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
10/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +6V, Id = 1340mA
Output IP3 versus Output Power
45
44
43
Output IP3 (dBm)
42
41
40
39
38
37
17.7GHz
18.7GHz
19.7GHz
36
35
10
12
14
16
18
20
22
24
26
28
30
Output power DCL (dBm)
OIP3 versus temperature
at 18.7GHz
IMD versus Output Power
at 18.7GHz
45
90
44
80
42
Output IMx (dBc)
Output IP3 (dBm)
43
41
40
39
38
37
85 C
36
25 C
70
60
50
40
30
-30 C
IM3
IM5
IM7
20
35
10
12
14
16
18
20
22
24
26
28
0
30
10
Output power DCL (dBm)
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
20
30
40
Output power DCL (dBm)
11/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
Package outline (1)
Matte tin, Lead Free
Units :
From the standard :
(Green)
mm
JEDEC MO-220
(VGGD)
37- GND
123456789101112-
DC
DET
VD3
VG3
VD2
VG2
VD1
VG1
Nc
Nc
Nc
Nc
131415161718192021222324-
RF in
Gnd(2)
Nc
Nc
Nc
Nc
VG1
VD1
VG2
VD2
VG3
VD3
252627282930313233343536-
Gnd(2)
Nc
Gnd(2)
Nc
Gnd(2)
RF out
Nc
Nc
Nc
Nc
REF
Nc
(1)
The package outline drawing included to this data-sheet is given for indication. Refer to the
application note AN0017 (http://www.ums-gaas.com) for exact package dimensions.
(2)
It is strongly recommended to ground all pins marked “Gnd” through the PCB board.
Ensure that the PCB board is designed to provide the best possible ground to the package.
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
12/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
Evaluation mother board
■ Compatible with the proposed footprint.
■ Based on typically Ro4350 / 10mils or equivalent.
■ Using a micro-strip to coplanar transition to access the package.
■ Recommended for the implementation of this product on a module board.
■ Decoupling capacitors of 100pF ±5%, 10nF ±10% and 1µF ±10% are recommended
for all DC accesses.
■ A 10KΩ resistor is recommended on VREF & VDET accesses for the detector
■ See application note AN0017 for details.
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
13/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
Notes
Due to ESD protection circuits on RF input and output, an external capacitance might be
requested to isolate the product from external voltage that could be present on the RF
accesses.
VG1 V D1 VG2 VD2 VG3 VD3
19
20
21
22
23
24
RFIN 13
8
7
6
5
4
3
30
RFOUT
35
REF
1
2
VG1 VD1 VG2 VD2 VG3 VD3 DET DC
The DC connections do not include any decoupling capacitor in package, therefore it is
mandatory to provide a good external DC decoupling (100pF, 10nF, 1µF) on the PC board,
as close as possible to the package.
A 10KΩ resistor is recommended in parallel to VDET, and VREF accesses.
The circuit includes ESD protections on all RF and DC leads
Package Information
Parameter
Value
RoHS-compliant
Package body material
Low stress Injection Molded Plastic
Lead finish
100% matte tin ( Sn)
MSL Rating
MSL3
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
14/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
DC Schematic
6V, 1340mA
VG1 VD1 VG2 VD2 VG3 VD3
50Ω
50Ω
50Ω
50Ω
100mA
190mA
380mA
100mA
190mA
380mA
50Ω
50Ω
REF
VG1 VD1 VG2 VD2 VG3 VD3
26KΩ
DET
26KΩ
DC
Recommended UMS Power chain
The CHA6362-QXG could be associated with the CHA4253aQQG as driver.
Total Gain: 46dB
Gain control: 30dB with the both amplifiers.
For more information, please see the datasheet CHA4253aQQG
Driver
HPA
CHA4253aQQG
17-24GHz
4V
230mA
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
CHA6362-QXG
17.7-19.7GHz
6V
1340mA
15/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
Recommended package footprint
Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot
print recommendations.
SMD mounting procedure
For the mounting process standard techniques involving solder paste and a suitable reflow
process can be used. For further details, see application note AN0017.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS package products.
Ordering Information
QFN 5x6 package:
CHA6362-QXG/XY
Stick: XY = 20
Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
16/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34