CHA4253-QQG
UMS
A3667A
A3688A
YYWWG
17- 24GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
UMS
MS
667A
688A
WWG
A4253
UMS UMS
YYWW
A3667A 
A3688A
A3667A
A3688A
YYWWG
YYWWG
UMS
A3667A
A3688A
YYWWG
The CHA4253-QQG is a 4stage monolithic
circuit, which delivers 24dBm for a gain at
23dB.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length.
It is supplied in RoHS compliant SMD
package.
Saturated power (dBm)
Main Features
■ Broadband performances: 17- 24GHz
■ 24dBm Pout for 1dB compression
■ 23dB gain
■ 33dBm OTOI
■ DC bias: Vd= 5.0V, Id= 270mA
■ QQG- QFN4x4
■ MSL1
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq
Frequency range
Gain
Linear Gain
P-1dB
Output Power @1dB comp.
OTOI
3rd order Intercept point
Ref. : DSCH4253-QQG3179 - 28 Jun 13
Min
17.0
Typ
Max
24.0
23
24
33
1/14
Unit
GHz
dB
dBm
dBm
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA4253-QQG
17- 24GHz Medium Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +5.0V
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
17.0
24.0
GHz
Gain
Linear Gain
23.0
dB
ΔG
Gain variation in temperature
0.06
dB/°C
rd
OTOI
3 order Intercept point
33
dBm
P-1dB
Output power @ 1dB compression
24
dBm
Psat
Saturated Output Power
25
dBm
RLin
Input Return Loss
12
dB
RLout
Output Return Loss
8
dB
NF
Noise figure
9.5
dB
Id
Quiescent Drain current
270
mA
Vg
Gate voltage
-0.7
V
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Vd
Drain bias voltage
Id
Drain bias quiescent current
Vg
Gate bias voltage
Pin
Maximum input power
Tj
Junction temperature (2)
Ta
Operating temperature range
Tstg
Storage temperature range
(1)
Operation of this device above anyone of these parameters
damage.
Values
Unit
6V
V
320
mA
-2 to +0.4
V
10
dBm
175
°C
-40 to +85
°C
-55 to +150
°C
may cause permanent
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pad No
Vd123
6
Vd4
7
Vg12
16
Vg34
14
Parameter
DC Drain voltage 1st, 2nd & 3rd stage
DC Drain voltage 4th stage
DC Gate voltage 1st & 2nd stage
DC Gate voltage 3rd & 4th stage
Ref. : DSCH4253-QQG3179 - 28 Jun 13
2/14
Values
5
5
-0.7
-0.7
Unit
V
V
V
V
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA4253-QQG
17- 24GHz Medium Power Amplifier
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below the maximum value specified in the next table. So, the system PCB must be
designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintained below the maximum temperature specified (see the curve Pdiss. Max) in order to
guarantee the nominal device life time (MTTF).
DEVICE THERMAL SPECIFICATION : CHA4253-QQG
Recommended max. junction temperature (Tj max)
:
120
Junction temperature absolute maximum rating
:
175
Max. continuous dissipated power (Pdiss. Max.)
:
1.4
=> Pdiss. Max. derating above Tcase(1)= 85
°C :
39
Junction-Case thermal resistance (Rth J-C)(2)
:
<25
Minimum Tcase operating temperature(3)
:
-40
Maximum Tcase operating temperature(3)
:
85
Minimum storage temperature
:
-55
Maximum storage temperature
:
150
°C
°C
W
mW/°C
°C/W
°C
°C
°C
°C
(1) Derating at junctio n temperature co nstant = Tj max.
(2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased.
(3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w).
1.6
1.2
1
0.8
0.6
0.4
Pdiss. Max. @Tj <Tj max (W)
-50
-25
0
25
50
0.2
75
100
125
0
150
Tcase
Pdiss. Max. @Tj <Tj max (W)
1.4
Example: QFN 16L 3x3
Location of temperature
reference point (Tcase)
on package's bottom side
Tcase (°C)
6.4
Ref. : DSCH4253-QQG3179 - 28 Jun 13
3/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA4253-QQG
17- 24GHz Medium Power Amplifier
Typical Package Sij parameters
Tamb.= +25°C, Vd = +5.0V, Id = 270mA
Freq
S11
PhS11
S12
(GHz)
(dB)
(°)
(dB)
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10.5
11
11.5
12
12.5
13
13.5
14
14.5
15
15.5
16
16.5
17
17.5
18
18.5
19
19.5
20
20.5
21
22
22.5
23
23.5
24
24.5
25
25.5
26
26.5
27
-0.232
-0.200
-0.199
-0.214
-0.239
-0.299
-0.440
-0.491
-0.464
-0.353
-0.470
-0.503
-0.339
-0.615
-1.033
-0.894
-1.225
-2.115
-2.205
-3.372
-4.159
-5.379
-6.882
-8.538
-10.164
-11.739
-13.365
-15.112
-15.360
-14.384
-13.283
-14.749
-14.646
-16.070
-17.953
-22.563
-28.117
-23.594
-25.405
-28.865
-31.230
-19.201
-14.285
-12.411
-10.600
-10.244
-10.312
-10.454
-9.327
-8.344
-41.4
-51.0
-61.1
-70.8
-80.5
-90.0
-99.3
-107.8
-116.7
-126.7
-135.5
-146.9
-157.6
-167.5
175.4
163.9
149.0
131.4
114.4
98.0
77.4
56.6
34.0
11.6
-13.2
-37.5
-65.2
-90.1
-102.8
-127.8
-147.6
-176.6
163.9
144.7
117.2
110.2
132.9
139.6
121.6
132.3
-110.2
-171.5
150.3
112.6
70.0
26.1
3.8
-13.4
-33.6
-47.6
Ref. : DSCH4253-QQG3179 - 28 Jun 13
-73.099
-74.772
-71.509
-68.453
-67.406
-68.024
-67.281
-63.840
-62.635
-59.993
-58.460
-55.613
-54.294
-52.732
-51.962
-53.032
-52.969
-55.294
-55.668
-57.540
-57.712
-52.812
-50.050
-51.550
-54.463
-49.971
-49.325
-47.508
-45.529
-47.764
-48.352
-53.653
-59.889
-53.968
-49.590
-47.464
-44.697
-45.854
-43.872
-45.308
-43.460
-41.705
-40.202
-38.470
-37.283
-38.202
-39.102
-40.288
-42.149
-40.351
PhS12
(°)
S21
(dB)
PhS21
(°)
S22
(dB)
PhS22
(°)
-138.9
-162.1
143.2
148.3
120.1
117.4
124.4
128.5
86.9
98.7
89.2
70.9
55.8
16.0
-12.3
-50.2
-86.7
-131.9
-150.1
-174.9
-177.0
168.6
138.9
104.0
115.5
105.4
87.9
81.3
63.7
35.2
16.4
-2.4
47.5
78.5
84.5
68.7
55.3
39.3
41.1
24.7
24.5
20.0
21.0
6.8
-16.3
-32.0
-43.6
-47.8
-42.7
-72.2
-24.507
-21.191
-20.151
-24.105
-29.123
-35.234
-43.427
-30.860
-26.570
-23.658
-21.153
-18.936
-16.180
-13.947
-11.674
-9.242
-6.627
-4.168
-1.466
1.114
3.967
6.904
9.766
13.151
16.674
20.151
22.647
23.836
23.723
23.651
23.182
23.166
23.538
23.934
24.053
24.401
24.598
24.163
24.438
24.140
23.554
22.788
22.291
21.740
19.773
16.115
11.482
6.829
2.194
-2.142
-105.6
-148.6
115.6
40.6
-31.2
-101.3
-115.6
-152.2
147.1
100.9
63.8
26.5
-6.5
-39.8
-72.7
-105.0
-135.0
-167.6
161.5
130.1
97.0
63.0
26.6
-11.3
-51.6
-97.3
-154.5
147.3
96.7
50.1
6.4
-34.9
-76.7
-118.8
-158.1
156.1
110.4
65.8
21.7
-69.1
-120.0
-169.2
143.8
87.7
26.3
-33.7
-82.2
-122.7
-159.4
166.1
-0.666
-0.859
-0.467
-0.434
-0.412
-0.418
-0.432
-0.462
-0.507
-0.616
-0.699
-0.721
-0.881
-1.208
-1.339
-1.542
-1.812
-2.070
-2.268
-2.592
-3.092
-3.568
-4.287
-5.193
-6.436
-8.193
-10.355
-9.190
-8.605
-9.930
-11.690
-12.070
-11.471
-13.205
-14.217
-11.852
-10.251
-10.488
-10.111
-9.618
-8.577
-6.571
-4.755
-2.864
-2.042
-2.238
-2.445
-2.182
-2.080
-1.960
-142.0
-163.5
179.8
162.7
147.2
132.6
118.8
105.1
91.7
77.9
65.2
52.0
38.9
26.5
12.7
1.5
-11.9
-24.5
-37.5
-48.7
-61.7
-74.9
-88.2
-101.4
-114.4
-122.5
-119.2
-122.0
-134.9
-153.2
-154.1
-156.2
-171.1
175.8
179.6
177.8
151.6
123.3
101.2
66.7
48.9
33.9
18.3
-4.0
-28.8
-49.7
-62.1
-74.3
-85.5
-98.3
4/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA4253-QQG
17- 24GHz Medium Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +5.0V, Id = 270mA
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
Linear Gain versus frequency in temperature
34
32
30
28
26
Gain (dB)
24
22
20
18
16
14
85°C
12
25°C
-40°C
10
14
16
18
20
22
24
26
Frequency (GHz)
Input return loss
Output return loss
0
0
25°C
-40°C
-5
-5
-10
-10
S22 (dB)
S11 (dB)
85°C
-15
-20
-15
-20
85°C
-25
5
10
15
20
25
30
35
-25
40
5
10
Frequency (GHz)
15
20
25
25°C
30
-40°C
35
40
Frequency (GHz)
1-
Ref. : DSCH4253-QQG3179 - 28 Jun 13
5/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA4253-QQG
17- 24GHz Medium Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +5.0V, Id = 270mA
Output power at 1dB compression versus temperature
30
29
Output power at 1dB comp. (dBm)
28
27
26
25
24
23
22
21
85°C
25°C
-40°C
20
19
18
16
17
18
19
20
21
22
23
24
25
23
24
25
Frequency (GHz)
Saturated power versus temperature
30
29
28
Saturated power (dBm)
27
26
25
24
23
22
25°C
-40°C
85°C
21
20
19
18
16
17
18
19
20
21
22
Frequency (GHz)
2-
Ref. : DSCH4253-QQG3179 - 28 Jun 13
6/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA4253-QQG
17- 24GHz Medium Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +5.0V, Id = 270mA
Drain current versus input power & temperature
at 18GHz
400
375
350
Drain current (mA)
325
300
275
250
225
85°C
25°C
-40°C
200
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
Input power (dBm)
26
0.4
24
0.35
22
0.3
20
0.25
18
0.2
16
0.15
14
0.1
Gain at 18GHz
Gain at 24GHz
Id
12
10
-1.2
Drain current (A)
Gain (dB)
Gain & current variation versus gate voltage
0.05
-1.15
-1.1
-1.05
-1
-0.95
-0.9
-0.85
-0.8
-0.75
-0.7
0
-0.65
Gate voltage (V)
Ref. : DSCH4253-QQG3179 - 28 Jun 13
7/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA4253-QQG
17- 24GHz Medium Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +5.0V, Id = 270mA
Output TOI versus Output power DCL & Frequency
40
38
Output TOI (dBm)
36
34
32
30
28
26
17GHz
18GHz
19GHz
20GHz
21GHz
22GHz
23GHz
24GHz
24
2
4
6
8
10
12
14
16
18
20
22
24
23
25
Output power DCL (dBm)
Output TOI versus Output power DCL & Temperature
at 19GHz
40
38
Output TOI (dBm)
36
34
32
30
-40 C
+85 C
25 C
28
26
24
3
5
7
Ref. : DSCH4253-QQG3179 - 28 Jun 13
9
11
13
15
17
Output power DCL (dBm)
8/14
19
21
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA4253-QQG
17- 24GHz Medium Power Amplifier
Package outline (1)
Matt tin, Lead Free
Units :
From the standard :
(Green)
mm
JEDEC MO-220
(VGGD)
17- GND
123456-
NC
Gnd(2)
RF IN
NC
Gnd(2)
Vd123
789101112-
Vd4
NC
NC
Gnd(2)
RF OUT
NC
13141516-
NC
Vg34
Nc
Vg12
(1)
The package outline drawing included to this data-sheet is given for indication. Refer to the
application note AN0017 (http://www.ums-gaas.com) for exact package dimensions.
(2)
It is strongly recommended to ground all pins marked “Gnd” through the PCB board.
Ensure that the PCB board is designed to provide the best possible ground to the package.
Ref. : DSCH4253-QQG3179 - 28 Jun 13
9/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA4253-QQG
17- 24GHz Medium Power Amplifier
Definition of the Sij reference planes
The reference planes used for Sij
measurements given above are symmetrical
from the symmetrical axis of the package
(see drawing beside). The input and output
reference planes are located at 3.18mm
offset (input wise and output wise
respectively) from this axis. Then, the given
Sij parameters incorporate the land pattern of
the evaluation motherboard recommended in
paragraph "Evaluation mother board".
3.18
3.18
ESD sensitivity
Standard
MIL-STD-1686C
ESD STM5.1-1998
Value
HBM Class 1 (<2000V)
HBM Class 0 (<250V)
Package Information
Parameter
Package body material
Lead finish
MSL Rating
Ref. : DSCH4253-QQG3179 - 28 Jun 13
Value
RoHS-compliant
Low stress Injection Molded Plastic
100% matte Sn
MSL1
10/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA4253-QQG
17- 24GHz Medium Power Amplifier
Evaluation mother board
■ Compatible with the proposed footprint.
■ Based on typically Ro4003 / 8mils or equivalent.
■ Using a micro-strip to coplanar transition to access the package.
■ Recommended for the implementation of this product on a module board.
■ Decoupling capacitors of 100pF ±5% and 10nF ±10% are recommended for all DC
accesses.
■ See application note AN0017 for details.
Ref. : DSCH4253-QQG3179 - 28 Jun 13
11/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA4253-QQG
17- 24GHz Medium Power Amplifier
DC Schematic
5V, 270mA
G12
250 Ω
250 Ω
G34
250 Ω
250 Ω
IN
OUT
31mA
47mA
64mA
128mA
D123
D4
Ref. : DSCH4253-QQG3179 - 28 Jun 13
12/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA4253-QQG
17- 24GHz Medium Power Amplifier
Note
Ref. : DSCH4253-QQG3179 - 28 Jun 13
13/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA4253-QQG
17- 24GHz Medium Power Amplifier
Recommended package footprint
Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot
print recommendations.
SMD mounting procedure
For the mounting process standard techniques involving solder paste and a suitable reflow
process can be used. For further details, see application note AN0017.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS package products.
Ordering Information
QFN 4x4 package:
CHA4253-QQG/XY
Stick: XY = 20
Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCH4253-QQG3179 - 28 Jun 13
14/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34