BAR42FILM
BAR43/A/C/SFILM
®
SMALL SIGNAL SCHOTTKY DIODES
K
A
K1
N.C.
K2
A
BAR42FILM
BAR43FILM
BAR43AFILM
A1
K2
K
K1
DESCRIPTION
A1
A2
General purpose metal to silicon diodes featuring
very low turn-on voltage and fast switching.
A2
BAR43SFILM
BAR43CFILM
SOT-23
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
IF
Parameter
Value
Unit
Repetitive peak reverse voltage
30
V
Continuous forward current
100
mA
IFSM
Surge non repetitive forward current
tp=10ms sinusoidal
750
mA
Ptot
Power dissipation (note 1)
Tamb = 25°C
250
mW
Tstg
Maximum storage temperature range
- 65 to +150
°C
Tj
Maximum operating junction temperature *
150
°C
TL
Maximum temperature for soldering during 10s
260
°C
Note 1: for double diodes, Ptot is the total power dissipation of both diodes.
* :
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth( j − a )
THERMAL RESISTANCE
Symbol
Rth(j-a)
Test conditions
Junction-ambient *
Value
Unit
500
°C/W
* Mounted on epoxy board with recommended pad layout.
August 2001- Ed: 2B
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BAR42FILM BAR43/A/C/SFILM
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
VBR
Tj = 25°C
VF *
Tj = 25°C
Test Conditions
Min.
IR = 100µA
30
BAR 42FILM
BAR 43FILM
All
IR **
Tj = 25°C
Typ.
Max.
V
IF = 10 mA
0.35
0.4
IF = 50 mA
0.5
0.65
IF = 2 mA
Unit
0.26
V
0.33
IF = 15 mA
0.45
IF = 100 mA
1
VR = 25V
Tj = 100°C
500
nA
100
µA
Max.
Unit
pF
5
ns
Pulse test: * tp = 380µs, δ < 2%
** tp = 5 ms, δ <2%
DYNAMIC CHARACTERISTICS
Symbol
C
trr
η*
Tj = 25°C
Tj = 25°C
Irr = 1mA
Test Conditions
VR = 1V
IF = 10 mA
RL = 100 Ω
Min.
F = 1MHz
IR = 10 mA
Tj = 25°C
F = 45Mhz
RL = 50 KΩ
Vi = 2V
CL = 300 pF
for BAR 43
Typ.
7
80
%
* Detection effeciency
Fig. 1-1: Forward voltage drop versus forward
current (typical values, low level).
Fig. 1-2: Forward voltage drop versus forward
current (typical values, high level).
IFM(A)
IFM(A)
2.00E-2
1.80E-2
Tj=100°C
1.60E-2
1.40E-2
Tj=25°C
1.20E-2
Tj=50°C
1.00E-2
8.00E-3
6.00E-3
4.00E-3
2.00E-3
VFM(V)
0.00E+0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
2/4
5E-1
Tj=100°C
1E-1
Tj=50°C
1E-2
Tj=25°C
VFM(V)
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
BAR42FILM BAR43/A/C/SFILM
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 3: Reverse leakage current versus junction
temperature.
IR(µA)
IR(µA)
1E+2
1E+4
VR=30V
Tj=100°C
1E+3
1E+1
1E+2
1E+0
Tj=50°C
1E-1
Tj=25°C
1E+1
1E+0
1E-1
1E-2
Tj(°C)
VR(V)
0
5
10
15
20
25
30
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
10
1E-2
0
25
50
75
100
125
150
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
FR4 with recommended pad layout, e(Cu)=35µm).
Zth(j-a)/Rth(j-a)
1.00
F=1MHz
Tj=25°C
δ = 0.5
5
δ = 0.2
0.10
δ = 0.1
2
T
Single pulse
VR(V)
1
1
2
tp(s)
5
10
20
30
0.01
1E-3
1E-2
1E-1
δ=tp/T
1E+0
1E+1
tp
1E+2
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35µm).
Rth(j-a) (°C/W)
350
P=0.25W
300
250
200
S(Cu) (mm²)
150
0
5
10
15
20
25
30
35
40
45
50
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BAR42FILM BAR43/A/C/SFILM
PACKAGE MECHANICAL DATA
SOT-23 (Plastic)
A
E
REF.
e
D
e1
B
S
A1
L
H
c
A
A1
B
c
D
e
e1
E
H
L
S
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
0.89
1.4
0.035
0.055
0
0.1
0
0.004
0.3
0.51
0.012
0.02
0.085
0.18
0.003
0.007
2.75
3.04
0.108
0.12
0.85
1.05
0.033
0.041
1.7
2.1
0.067
0.083
1.2
1.6
0.047
0.063
2.1
2.75
0.083
0.108
0.6 typ.
0.024 typ.
0.35
0.65
0.014
0.026
FOOT PRINT DIMENSIONS
0.9
0.035
1.1
0.043
0.9
0.035
2.35
0.92
1.9
0.075
mm
inch
1.1
0.043
1.45
0.037
0.9
0.035
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
BAR42FILM
D94
SOT-23
0.01g
3000
Tape & reel
BAR43FILM
D95
SOT-23
0.01g
3000
Tape & reel
BAR43AFILM
DB1
SOT-23
0.01g
3000
Tape & reel
BAR43CFILM
DB2
SOT-23
0.01g
3000
Tape & reel
BAR43SFILM
DA5
Epoxy meets UL94,V0
SOT-23
0.01g
3000
Tape & reel
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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