BAR 42
BAR 43, A, C, S

SMALL SIGNAL SCHOTTKY DIODES
A
K
K1
N.C.
K2
A
BAR42/BAR43
BAR43A
A1
K2
K
K1
A1
DESCRIPTION
A2
A2
General purpose metal to silicon diodes featuring
very low turn-on voltage and fast switching.
BAR43C
BAR43S
SOT-23
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
IF
Parameter
Value
Unit
Repetitive peak reverse voltage
30
V
Continuous forward current
100
mA
IFSM
Surge non repetitive forward current
tp=10ms sinusoidal
750
mA
Ptot
Power dissipation (note 1)
Tamb = 25°C
250
mW
Tstg
Maximum storage temperature range
- 65 to +150
°C
Tj
Maximum operating junction temperature *
150
°C
TL
Maximum temperature for soldering during 10s
260
°C
Note 1: for double diodes, Ptot is the total power dissipation of both diodes.
* :
1
dPtot
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth(j−a)
THERMAL RESISTANCE
Symbol
Rth(j-a)
Test conditions
Junction-ambient *
Value
500
Unit
°C/W
* Mounted on epoxy board with recommended pad layout.
June 1999 - Ed: 2A
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BAR 42/BAR 43, A, C, S
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
Min.
30
VBR
Tj = 25°C
IR = 100µA
VF *
Tj = 25°C
BAR 42
BAR 43
All
IR **
Typ.
IF = 10 mA
0.35
0.4
IF = 50 mA
0.5
0.65
IF = 2 mA
0.26
V
0.33
IF = 15 mA
0.45
IF = 100 mA
1
Tj = 100°C
Pulse test:
Unit
V
VR = 25V
Tj = 25°C
Max.
500
nA
100
µA
Max.
Unit
pF
5
ns
* tp = 380µs, δ < 2%
** tp = 5 ms, δ <2%
DYNAMIC CHARACTERISTICS
Symbol
C
trr
η*
Test Conditions
Min.
Tj = 25°C
Tj = 25°C
Irr = 1mA
VR = 1V
IF = 10 mA
RL = 100 Ω
F = 1MHz
IR = 10 mA
Tj = 25°C
F = 45Mhz
RL = 50 KΩ
Vi = 2V
CL = 300 pF
for BAR 43
Typ.
7
80
%
* Detection efficiency.
Fig. 1-1: Forward voltage drop versus forward
current (typical values, low level).
Fig. 1-2: Forward voltage drop versus forward
current (typical values, high level).
IFM(A)
IFM(A)
5E-1
2.00E-2
1.80E-2
Tj=100°C
Tj=100°C
1.60E-2
1E-1
1.40E-2
Tj=25°C
1.20E-2
Tj=50°C
1.00E-2
8.00E-3
6.00E-3
Tj=50°C
1E-2
Tj=25°C
4.00E-3
2.00E-3
VFM(V)
0.00E+0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
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VFM(V)
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
BAR 42/BAR 43, A, C, S
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 3: Reverse leakage current versus junction
temperature.
IR(µA)
IR(µA)
1E+2
1E+4
VR=30V
Tj=100°C
1E+3
1E+1
1E+2
1E+0
1E+1
Tj=50°C
1E+0
Tj=25°C
1E-1
1E-1
Tj(°C)
VR(V)
1E-2
1E-2
0
5
10
15
20
25
30
Fi g . 4: Junction capacitance versus reverse
voltage applied (typical values).
0
25
50
75
100
125
150
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
FR4 with recommendedpad layout, e(Cu)=35µm).
C(pF)
Zth(j-a)/Rth(j-a)
10
1.00
F=1MHz
Tj=25°C
δ = 0.5
5
δ = 0.2
0.10
δ = 0.1
2
T
Single pulse
tp(s)
VR(V)
1
1
2
5
10
20
30
0.01
1E-3
1E-2
1E-1
δ=tp/T
1E+0
1E+1
tp
1E+2
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printedcircuit board FR4, copper thickness:35µm).
Rth(j-a) (°C/W)
350
P=0.25W
300
250
200
S(Cu) (mm )
150
0
5
10
15
20
25
30
35
40
45
50
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BAR 42/BAR 43, A, C, S
PACKAGE MECHANICAL DATA
SOT 23 (Plastic)
A
E
REF.
e
D
e1
B
S
A1
L
H
c
A
A1
B
c
D
e
e1
E
H
L
S
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
0.89
1.4
0.035
0.055
0
0.1
0
0.004
0.3
0.51
0.012
0.02
0.085
0.18
0.003
0.007
2.75
3.04
0.108
0.12
0.85
1.05
0.033
0.041
1.7
2.1
0.067
0.083
1.2
1.6
0.047
0.063
2.1
2.75
0.083
0.108
0.6 typ.
0.024 typ.
0.35
0.65
0.014
0.026
FOOT PRINT DIMENSIONS
0.9
0.035
1.1
0.043
0.9
0.035
2.35
0.92
1.9
0.075
mm
inch
1.1
0.043
1.45
0.037
0.9
0.035
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
BAR42
D94
SOT-23
0.01g
3000
Tape & reel
BAR43
D95
SOT-23
0.01g
3000
Tape & reel
BAR43S
DB1
SOT-23
0.01g
3000
Tape & reel
BAR43C
DB2
SOT-23
0.01g
3000
Tape & reel
BAR43S
DA5
Epoxy meets UL94,V0
SOT-23
0.01g
3000
Tape & reel
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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of STMicroelectronics.
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 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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