BAR 18
BAS70-04 06
®
SMALL SIGNAL SCHOTTKY DIODES
A1
K2
K
K1
N.C.
A2
A
BAR18
BAS70-04
A
K
K1
A1
A2
K2
BAS70-06
BAS70-05
DESCRIPTION
Low turn-on and high breakdown voltage diodes intended for ultrafast switching and UHF detectors in
hybrid micro circuits.
SOT-23
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Value
Unit
Repetitive peak reverse voltage
70
V
IF
Continuous forward current
70
mA
Ptot
Power dissipation (note 1)
250
mW
Tstg
Maximum storage temperature range
- 65 to +150
°C
VRRM
Parameter
Tamb = 25°C
Tj
Maximum operating junction temperature *
150
°C
TL
Maximum temperature for soldering during 10s
260
°C
Note 1: for double diodes, Ptot is the total dissipation of both diodes
* :
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth( j − a)
THERMAL RESISTANCE
Symbol
Rth (j-a)
Parameter
Junction to ambient (*)
Value
Unit
500
°C/W
(*) Mounted on epoxy board with recommended pad layout.
December 2001 - Ed: 3A
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BAR 18 / BAS70-04 06
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VBR
Tj = 25°C
IR = 10µA
VF *
Tj = 25°C
IF = 1mA
410
mV
IR **
Tj = 25°C
VR = 50V
200
nA
Max.
Unit
2
pF
100
ps
Pulse test:
70
V
* tp = 380µs, δ < 2%
** tp = 5 ms, δ < 2%
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
C
Tj = 25°C VR = 0V
F = 1MHz
τ*
Tj = 25°C
Krakauer Method
IF = 5mA
Min.
Typ.
* Effective carrier life time.
Fig. 1-1: Forward voltage drop versus forward
current (low level).
Fig. 1-2: Forward voltage drop versus forward
current (high level).
IFM(A)
IFM(A)
2.0E-2
1.8E-2
1.6E-2
1.4E-2
1.2E-2
1.0E-2
8.0E-3
6.0E-3
4.0E-3
2.0E-3
0.0E+0
0.0
2/4
7E-2
Tj=100°C
Typical values
Tj=100°C
Typical values
1E-2
Tj=25°C
Maximum values
Tj=25°C
Maximum values
Tj=25°C
Typical values
1E-3
VFM(V)
0.2
0.4
0.6
0.8
1.0
1.2
Tj=25°C
Typical values
VFM(V)
1E-4
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BAR 18 / BAS70-04 06
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 3: Reverse leakage current versus junction
temperature (typical values)
IR(µA)
IR(µA)
5E+2
1E+1
VR=70V
Tj=100°C
1E+2
1E+0
1E+1
1E-1
1E+0
Tj=25°C
1E-2
1E-1
Tj(°C)
VR(V)
1E-3
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70
Fig. 4: Junction capacitance versus reverse voltage
applied (typical values).
1E-2
0
25
50
75
100
125
150
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (alumine
substrate 10mm*8mm*0.5mm).
C(pF)
Zth(j-a)/Rth(j-a)
2.0
1.00
F=1MHz
Tj=25°C
δ = 0.5
1.0
δ = 0.2
0.10
δ = 0.1
T
0.1
Single pulse
VR(V)
1
10
100
0.01
1E-3
tp(s)
1E-2
1E-1
δ=tp/T
1E+0
1E+1
tp
1E+2
Fig. 6: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed
circuit board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
350
P=0.25W
300
250
200
S(Cu) (mm²)
150
0
5
10
15
20
25
30
35
40
45
50
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BAR 18 / BAS70-04 06
PACKAGE MECHANICAL DATA
SOT23 (Plastic)
A
E
DIMENSIONS
REF.
e
D
e1
B
A
S
A1
L
H
Inches
Min.
Max.
Min.
Max.
0.89
1.4
0.035
0.055
0.004
A1
0
0.1
0
B
0.3
0.51
0.012
0.02
c
0.085
0.18
0.003
0.007
D
2.75
3.04
0.108
0.12
e
0.85
1.05
0.033
0.041
e1
1.7
2.1
0.067
0.083
E
1.2
1.6
0.047
0.063
H
2.1
2.75
0.083
0.108
L
c
Millimeters
S
0.6 typ.
0.35
0.65
0.024 typ.
0.014
0.026
FOOTPRINT DIMENSIONS
0.9
0.035
1.1
0.043
0.9
0.035
2.35
0.92
1.9
0.075
mm
inch
1.1
0.043
1.45
0.037
0.9
0.035
■
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
BAR18
D76
SOT-23
0.01g
3000
Tape & reel
BAS70-04
D96
SOT-23
0.01g
3000
Tape & reel
BAS70-05
D97
SOT-23
0.01g
3000
Tape & reel
BAS70-06
D98
SOT-23
0.01g
3000
Tape & reel
Epoxy meets UL94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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approval of STMicroelectronics.
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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