PRM012N10N5
PFC Device Corporation
100V Single N-Channel MOSFET
Major ratings and characteristics
Characteristics
Values
Units
VDS
ID (TC=25℃)
100
51
12
15
V
A
Max. RDS(ON)@VGS=10V
Max. RDS(ON)@VGS=4.5V
TJ Operating Junction
Temperature
-55 to +150
PRM012N10N5
S
D
m
m
o
C
DD
S S
G
D
DFN 5x6
General Description
The N-Channel enhancement mode power
field effect transistor is using trench DMOS
technology. This advanced technology has
been especially tailored to minimize
on-state resistance, provide superior
switching performance, and withstand high
energy pulse in the avalanche and
commutation mode. The device is well
suited for high efficiency fast switching
applications.
Typical Applications
 Charger Adapter
 Power Tools
 LED Lighting
Jul-2016
Features





Max. RDS(ON)=12mΩ@VGS=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
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Characteristics
PRM012N10N5
1. Characteristics
( TA = 25 oC unless otherwise specified )
Maximum Ratings Characteristics
Symbol
VDS
VGS
ID
5
IDM
EAS
IAS
PD
TSTG
TJ
Parameter
Rating
Units
Drain-Source Voltage
100
V
Gate-Source Voltage
Drain Current – Continuous (TC=25℃)
±20
V
51
A
Drain Current – Continuous (TC=100℃)
32
A
Drain Current – Pulsed
1
150
A
2
36
mJ
2
27
A
56.8
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Power Dissipation (TC=25℃)
0.45
W
W/℃
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
Power Dissipation – Derate above 25℃
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance Junction to ambient
Typ.
---
RθJC
Thermal Resistance Junction to Case
---
Version 4.0
Max.
Unit
62
℃/W
2.2
℃/W
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Characteristics
PRM012N10N5
( TJ = 25 oC unless otherwise specified )
Electrical Characteristics
Off Characteristics
Symbol
BVDSS
Parameter
Conditions
Min.
Typ.
Max.
Unit
100
---
---
VDS=100V, VGS=0V, TJ=25℃
---
---
1
V
uA
VDS=100V, VGS=0V, TJ=125℃
---
---
250
uA
VGS=±20V, VDS=0V
---
---
±100
nA
VGS=10V, ID=20A
---
---
12
m
VGS=4.5V, ID=10A
---
---
15
m
Gate Threshold Voltage
VGS=VDS, ID=250uA
1.0
---
2.5
V
Forward Transconductance
VDS=5V, ID=20A
---
55
---
S
---
37
---
---
7
---
---
7
---
---
14
---
---
68
---
---
41
---
---
108
---
---
2200
---
---
210
---
Drain-Source Breakdown Voltage
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=0V, ID=250uA
On Characteristics
RDS(ON)
VGS(th)
gfs
Static Drain-Source On-Resistance
Dynamic and switching Characteristics
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Total Gate Charge
3, 4
Gate-Source Charge
Gate-Drain Charge
Turn-On Rise Time
Ciss
Input Capacitance
3, 4
3, 4
Turn-Off Delay Time
Turn-Off Fall Time
VDS=50V, VGS=10V, ID=20A
3, 4
Turn-On Delay Time
Tf
3, 4
VDD=50V, VGS=10V, RG=6
ID=20A
3, 4
3, 4
VDS=50V, VGS=0V, f=1MHz
nC
ns
pF
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
---
30
---
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
---
1.6
---

VGS=0V, IS=20A
---
---
1.5
V
---
47
---
ns
---
65
---
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=20A, di/dt=100A/us
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=50V, VGS=10V, L=0.1mH, IAS=27A, RG=25, Starting TJ=25℃
3.
The data tested by pulsed, pulse width ≦300us, duty cycle ≦2%.
4.
5.
Essentially independent of operating temperature.
Package limitation current is 45A.
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Characteristics
PRM012N10N5
2. Characteristics Curves
Ratings and Characteristics Curves
Figure 1: Power Dissipation
( TA = 25℃ unless otherwise specified )
Figure 2: Continuous Drain Current vs. TC
Figure 4: Normalized BVDSS vs. TJ
Figure 3: Normalized RDS(ON) vs. TJ
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Characteristics
PRM012N10N5
Ratings and Characteristics Curves
( TA = 25℃ unless otherwise specified )
Figure 5: On-Region Characteristics
Figure 6: Typ. RDS Variation vs. ID and VGS
Figure 7: Typ. Capacitance Characteristics
Figure 8: Typ. Gate Charge Characteristics
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Characteristics
PRM012N10N5
Ratings and Characteristics Curves
( TA = 25℃ unless otherwise specified )
Figure 9: Normalized Thermal Transient
Impedance, Junction-to-Case
Figure 10: Maximum Safe Operation Area
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Characteristics
PRM012N10N5
3. Marking information
Top Marking Rule
PFC PRM
012N10N5
YYWW ABSH
PRM012N10N5 = Product Type Marking Code
YYWW = Date Code
YY = Last two digits of year
WW = Week code
ABS = Assembly code
H = Halogen Free (N/A = common molding compound)
4. Package information
Package Outline Dimensions
millimeters
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Characteristics
PRM012N10N5
5. Ordering information
Part Number
PRM012N10N5
Package
DFN 5X6
Delivery mode
3000 pcs / 13" diameter reel
Mechanical
 Molder Plastic : UL Flammability Classification Rating 94V-0
 Device Weight : 0.003 ounces (0.093grams) – DFN 5X6
PFC Device Corp reserves the right to make changes without further notice to any products herein. PFC
Device Corp makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does PFC Device Corp assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. “Typical” parameters which may be provided in PFC Device Corp data
sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typical” must be validated for each customer application by
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in systems intended for surgical implant into the body, or other applications intended to support or sustain
life, or for any other application in which the failure of the PFC Device Corp product could create a situation
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that PFC Device Corp
was negligent regarding the design or manufacture of the part.
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