PRM010N10CTF
PFC Device Corporation
100V Single N-Channel MOSFET
Major ratings and characteristics
Characteristics
Values
Units
VDS
ID (TC=25℃)
Max. RDS(ON)
TJ Operating Junction
Temperature
100
37
10
V
A
-55 to +150
PRM010N10CTF
mΩ
Ω
o
C
G
General Description
S
ITO-220
The N-Channel enhancement mode power
field effect transistor is using trench DMOS
technology. This advanced technology has
been especially tailored to minimize
on-state resistance, provide superior
switching performance, and withstand high
energy pulse in the avalanche and
commutation mode. The device is well
suited for high efficiency fast switching
applications.
Typical Applications
Features
Charger Adapter
Power Tools
LED Lighting
Oct-2015
D
Max. RDS(ON)=10mΩ@VGS=10V
Improved dv/dt capability
Fast switching
Green Device Available
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Characteristics
PRM010N10CTF
1. Characteristics
( TA = 25 oC unless otherwise specified )
Maximum Ratings Characteristics
Symbol
VDS
VGS
ID
Parameter
Rating
Units
Drain-Source Voltage
100
V
Gate-Source Voltage
Drain Current – Continuous (TC=25
±20
V
℃)
Drain Current – Continuous (T =100℃)
37
A
23.5
A
Drain Current – Pulsed
C
IDM
EAS
IAS
PD
TSTG
TJ
1
150
A
2
125
mJ
2
50
A
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Power Dissipation (TC=25 )
℃
30.4
℃
Power Dissipation – Derate above 25
W
W/
℃
℃
℃
0.243
Storage Temperature Range
-55 to 150
Operating Junction Temperature Range
-55 to 150
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance Junction to ambient
Typ.
---
RθJC
Thermal Resistance Junction to Case
---
Version 4.0
Max.
62
4.1
Unit
℃/W
℃/W
2/2
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Characteristics
PRM010N10CTF
( TJ = 25 oC unless otherwise specified )
Electrical Characteristics
Off Characteristics
Symbol
BVDSS
IDSS
IGSS
Parameter
Conditions
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Min.
Typ.
Max.
Unit
100
---
---
VDS=100V, VGS=0V, TJ=25
---
---
1
V
uA
VDS=100V, VGS
---
---
250
uA
---
---
±100
nA
VGS=0V, ID=250uA
℃
=0V, T =125℃
J
VGS=±20V, VDS=0V
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance VGS=10V, ID=20A
VGS(th)
gfs
---
8.5
10
mΩ
Gate Threshold Voltage
VGS=VDS, ID=250uA
2.5
---
4.5
V
Forward Transconductance
VDS=5V, ID=20A
---
40
---
S
---
68
---
---
26
---
---
20
---
---
36
---
---
---
---
107
34
42
---
4460
---
---
---
---
370
160
VGS=0V, VDS=0V, f=1MHz
---
0.8
---
Ω
VGS=0V, IS=20A
---
---
1.5
V
---
37
---
ns
---
41
---
nC
Dynamic and switching Characteristics
3,4
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Td(on)
Tr
Td(off)
3,4
VDS=50V, VGS=10V, ID=20A
3,4
Gate-Drain Charge
3,4
Turn-On Delay Time
3,4
Turn-On Rise Time
VDD=50V, VGS=10V, RG=6Ω
ID=20A
3,4
Turn-Off Delay Time
3,4
Tf
Turn-Off Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VDS=25V, VGS=0V, f=1MHz
---
---
nC
ns
--pF
---
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=20A, di/dt=100A/us
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=50V, VGS=10V, L=0.1mH, IAS=50A, RG=25Ω, Starting TJ=25
℃
3.
The data tested by pulsed, pulse width ≦300us, duty cycle ≦2%.
4.
Essentially independent of operating temperature.
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Characteristics
PRM010N10CTF
2. Characteristics Curves
Ratings and Characteristics Curves
Figure 1: Power Dissipation
( TA = 25℃
℃ unless otherwise specified )
Figure 2: Continuous Drain Current vs. TC
Figure 3: Normalized RDS(ON) vs. TJ
Figure 4: Normalized BVDSS vs. TJ
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Characteristics
PRM010N10CTF
( TA = 25℃
℃ unless otherwise specified )
Ratings and Characteristics Curves
Figure 5: On-Region Characteristics
Figure 6: Typ. RDS Variation vs. ID and VGS
Figure 7: Typ. Capacitance Characteristics
Figure 8: Typ. Gate Charge Characteristics
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Characteristics
PRM010N10CTF
( TA = 25℃
℃ unless otherwise specified )
Ratings and Characteristics Curves
Figure 9: Normalized Thermal Transient
Impedance, Junction-to-Case
Figure 10: Maximum Safe Operation Area
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Characteristics
PRM010N10CTF
3. Marking information
Top Marking Rule
PFC PRM
010N10CTF
YYWW ABSH
PRM010N10CTF = Product Type Marking Code
YYWW = Date Code
YY = Last two digits of year
WW = Week code
ABS = Assembly code
H = Halogen Free (N/A = common molding compound)
4. Package information
Package Outline Dimensions
millimeters
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Characteristics
PRM010N10CTF
5. Ordering information
Part Number
PRM010N10CTF
Package
ITO-220AB
Delivery mode
50 pcs / Tube
Mechanical
Molder Plastic: UL Flammability Classification Rating 94V-0
Device Weight : 0.06 ounces (1.74grams) - ITO-220AB
Mounting Torque : Recommended 4~5 kg-cm
PFC Device Corp reserves the right to make changes without further notice to any products herein. PFC
Device Corp makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does PFC Device Corp assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. “Typical” parameters which may be provided in PFC Device Corp data
sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typical” must be validated for each customer application by
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rights of others. PFC Device Corp products are not designed, intended, or authorized for use as components
in systems intended for surgical implant into the body, or other applications intended to support or sustain
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
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was negligent regarding the design or manufacture of the part.
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