Bulletin I27125
rev. A 04/99
P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability
25A
Electrically isolated base plate
Available up to 1200 V RRM, V DRM
High dynamic characteristics
Wide choice of circuit configurations
Simplified mechanical design and assembly
UL E78996 approved
Description
The P100 series of Integrated Power Circuits
consists of power thyristors and power diodes
configured in a single package. With its isolating
base plate, mechanical designs are greatly simplified giving advantages of cost reduction and
reduced size.
Applications include power supplies, control circuits and battery chargers.
Major Ratings and Characteristics
Parameters
P100
Units
25
A
@ TC
85
°C
@ 50Hz
357
A
@ 60Hz
375
A
@ 50Hz
637
A 2s
@ 60Hz
580
A 2s
6365
A2√s
VRRM
400 to 1200
V
VINS
2500
V
- 40 to 125
°C
ID
IFSM
2
It
I2√t
TJ
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1
P100 Series
Bulletin I27125 rev. A 04/99
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM maximum repetitive VRSM maximum nonVDRM maximum
peak reverse voltage
repetitive peak reverse repetitive peak off-state
voltage
voltage
V
V
V
Type number
P101, P121, P131
400
500
400
P102, P122, P132
600
700
600
P103, P123, P133
800
900
800
P104, P124, P134
1000
1100
1000
P105, P125, P135
1200
1300
1200
IRRM max.
@ TJ max.
mA
10
On-state Conduction
Parameter
P100
Units Conditions
ID
Maximum DC output current
25
I TSM
Max. peak one-cycle
357
I FSM
non-repetitive on-state
375
t = 8.3ms
reapplied
or forward current
300
t = 10ms
100% VRRM
315
t = 8.3ms
reapplied
Sinusoidal half wave,
Initial TJ = TJ max.
2
I t
2
Maximum I t for fusing
Maximum I2 √t for fusing
@ TC = 85°C, full bridge
t = 10ms
A
637
No voltage
t = 10ms
No voltage
t = 8.3ms
reapplied
450
t = 10ms
100% VRRM
410
t = 8.3ms
reapplied
580
I2√t
A
6365
2
A s
A2√s
t = 0.1 to 10ms, no voltage reapplied
I 2t for time tx = I 2√t . √tx
V T(TO) Max. value of threshold voltage
r t1
0.82
V
TJ = 125°C
12
mΩ
1.35
V
200
A/µs
TJ = 125°C from 0.67 VDRM
Max. level value of on-state
slope resistance
V TM
Max. peak on-state or
V FM
forward voltage drop
di/dt
Maximum non repetitive rate of
rise of turned on current
TJ = 125°C, Av. power = VT(TO) * IT(AV) + rt + (IT(RMS)) 2
TJ = 25°C, ITM = π x I T(AV)
ITM = π x IT(AV), I g = 500mA, tr < 0.5µs, tp > 6µs
IH
Maximum holding current
130
mA
TJ = 25°C anode supply = 6V, resistive load, gate open
IL
Maximum latching current
250
mA
TJ = 25°C anode supply = 6V, resistive load
2
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P100 Series
Bulletin I27125 rev. A 04/99
Blocking
Parameter
dv/dt
P100
Units Conditions
Maximum critical rate of rise of
200
V/µs
TJ = 125°C, exponential to 0.67 VDRM gate open
10
mA
TJ = 125°C, gate open circuit
100
µA
TJ = 25°C
2500
V
off-state voltage
IRRM
Max. peak reverse and off-state
IDRM
leakage current at VRRM, VDRM
IRRM
Max peak reverse leakage current
VINS
RMS isolation voltage
50Hz, circuit to base, all terminal shorted,
TJ = 25°C, t = 1s
Triggering
Parameter
PGM
P100
Maximum peak gate power
PG(AV) Maximum average gate power
IGM
Maximum peak gate current
- VGM
Maximum peak negative
2
2
IGD
W
A
10
gate voltage
VGT
Units Conditions
8
V
Maximum gate voltage required
3
to trigger
2
T J = 25°C
1
T J = 125°C
Maximum gate current
90
required to trigger
60
T J = 25°C
Anode Supply = 6V resistive load
T J = 125°C
Maximum gate voltage
0.2
V
TJ = 125°C, rated VDRM applied
2
mA
TJ = 125°C, rated VDRM applied
P100
Units
that will not trigger
IGD
Anode Supply = 6V resistive load
T J = - 40°C
mA
35
VGD
T J = - 40°C
Maximum gate current
that will not trigger
Thermal and Mechanical Specification
Parameter
TJ
Max. operating temperature range
-40 to 125
T
Max. storage temperature range
-40 to 125
stg
Conditions
°C
RthJC Max. thermal resistance,
2.24
K/W
DC operation per junction
0.10
K/W
Mounting surface, smooth and greased
4
Nm
A mounting compound is recommended and the torque
should be checked after a period of 3 hours to allow for the
spread of the compound
58 (2.0)
g (oz)
junction to case
RthCS Max. thermal resistance,
case to heatsink
T
Mounting torque, base to heatsink
wt
Approximate weight
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P100 Series
Bulletin I27125 rev. A 04/99
Circuit Type and Coding *
Circuit "0"
Circuit "2"
Circuit "3"
Terminal Positions
G1
G1
Schematic diagram
diagram
G3
G2
AC1
AC2
AC1
AC2
AC1
AC2
G4
G2
(-)
G1
(-)
(+)
Single Phase
Hybrid Bridge
CommonCathode
G2
(-)
(+)
Single Phase
Hybrid Bridge
Doubler
(+)
Single Phase
All SCR
Bridge
Basic series
P10.
P12.
P13.
With voltage
suppression
P10.K
P12.K
P13.K
With free-wheeling
diode
P10.W
-
-
P10.KW
-
-
With both voltage
suppression and
free-wheeling diode
* To complete code refer to voltage ratings table, i.e.: for 600V P10.W complete code is P102W
25 (0.98) MAX.
1.65 (0.06)
MAX.
12.7 (0.50) 12.7 (0.50)
15.5 (0.61)
63.5 (2.50)
Faston 6.35x0.8 (0.25x 0.03)
23.2 (0.91)
5.2 (0.20)
45 (1.77)
32.5 (1.28) MAX.
2.5 (0.10) MAX .
4.6 (0.18)
4.6 (0.18)
Outline Table
33.8 (1.33)
48.7 (1.91)
All dimensions in millimeters (inches)
4
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P100 Series
Bulletin I27125 rev. A 04/99
R
50
SA
th
K/
W
5
1.
2
=
K/
40
W
ta
el
-D
3K
/W
30
R
Maximum Total Power Loss (W)
60
180°
(Sine)
5 K/
W
20
7 K/
W
P100 Series
T = 125°C
J
10
1 0 K/
W
0
0
5
10
15
20
Total Output Current (A)
25
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink)
15
180°
120°
90°
60°
30°
10
RMS Limit
Conduction angle
5
P100 Series
T J = 125°C
Per Junction
0
0
5
10
20
DC
180°
120°
90°
60°
30°
15
10
RMS Limit
Conduct ion Period
5
P100 Series
T J = 125°C
Per Junction
0
15
0
Average On-state Current (A)
Fig. 2 - On-state Power Loss Characteristics
10
15
20
Fig. 3 - On-state Power Loss Characteristics
1000
130
Instantaneous On-state Current (A)
Maximum Allowable Case Temperature (°C)
5
Average On-state Current (A)
Fully Turned.on
120
180°
(Sine)
180°
(Rect)
110
100
90
P100 Series
Per Module
80
T J = 25 °C
T J = 125 °C
100
10
P100 Series
Per Junction
1
70
0
5
10
15
20
25
30
0
1
2
3
4
5
6
Total Output Current (A)
Instantaneous On-state Voltage (V)
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Voltage Drop Characteristics
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P100 Series
350
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Bulletin I27125 rev. A 04/99
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial T J = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
300
250
200
P100 Series
Per Junction
150
1
10
400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T J = 125°C
No Voltage Reapplied
Rated V RRM Reapplied
350
300
250
200
150
P100 Series
Per Junction
100
0.01
100
0.1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
(K/W)
10
thJC
Steady State Value:
RthJC = 2.24K/W
Transient Thermal Impedance Z
(DC Operation)
1
P100 Series
Per Junction
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Rectangular gate pulse
a)Recommended load line for
rated di/dt : 10V, 20 ohms, tr <= 1µs
b)Recommended load line for
rated di/dt : 10 V, 65 ohms, tr <= 1µs
(1) PGM
(2) PGM
(3) PGM
(4) PGM
= 100 W, tp = 500 µs
= 50 W, tp = 1 ms
= 20 W, tp = 25 ms
= 10 W, tp = 5 ms
10
(b)
VGD
(a)
TJ = -40 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
IGD
0.1
0.001
(4)
P100 Series
0.01
0.1
1
(3)
(2)
(1)
Frequency Limited
By PG(AV)
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
6
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P100 Series
Bulletin I27125 rev. A 04/99
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Data and specifications subject to change without notice.
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