Ruttonsha International Rectifier Ltd.
SILICON CONTROLLED RECTIFIERS
RUTTONSHA
81RK SERIES
Power Silicon Controlled Rectifiers
125 Amp RMS SCRs
Types : 81RK10 TO 81RK160
FEATURES
❖
All diffused series.
❖
International Standard Case TO-209 AC (TO-94).
❖
Threaded studs UNF 1/2’’ - 20 UNF 2A.
❖
High di/dt and dv/dt capabilities.
❖
Reliable blocking at elevated temperature.
❖
High surge current rating 2200 A.
❖
High I 2t capability 24200 A 2Sec.
❖
Excellent dynamic characteristics.
❖
Compression Bonded Encapsulation for heavy
duty operations such as severe thermal cycling.
81RK ...
THERMAL MECHANICAL SPECIFICATIONS
R thjc
Maximum thermal resistance
junction to case
DC and 180 0 sinewave
0.26 0C/W
R thcs
Contact thermal resistance case-to-sink
0.08 0 C/W
TJ
Junction operating temp. range
-40 0C to +125 0C
T stg
Storage temperature range
-40 0C to +150 0C
Mounting torque
(Non-lubricated threads)
14.0Nm. Min.
15.5Nm. Max.
Approximate weight
130 gms.
UNIT:- M.M.
ELECTRICAL RATINGS
TYPE
81RK
10
20
40
60
80
100
120
140
160
V DRM
Max. repetitive peak off state voltage (V)
100
200
400
600
800
1000
1200
1400
1600
V RRM
Max. repetitive peak reverse voltage (V)
100
200
400
600
800
1000
1200
1400
1600
V RSM
Max. non-repetitive peak reverse voltage (V)
150
300
500
700
900
1100
1300
1500
1700
I RM &
I DM
Max. peak reverse & off state current
@ rated V DRM & V RRM 125 0C -mA
20
20
20
20
20
20
20
20
20
SILICON CONTROLLED RECTIFIERS
81RK SERIES
ELECTRICAL SPECIFICATION
ON-STATE CONDITION
Parameter
IT(AV)
81RK
Max. average on-state current
@ case temperature
Units
80
A
90
0
I T(RMS)
Max. RMS on-state current
125
I TSM
Max. peak one cycle
non-repetitive surge current
2200
2
It
2
Maximum I t for fusing
180 0C conduction, half sine wave
C
A
1730
24.2
kA 2 s
14.96
Conditions
kA 2 √s
t = 10ms
No voltage
reapplied
t = 10ms
100% V RRM
reapplied
t = 10ms
No voltage
reapplied
t = 10ms
100% V RRM
reapplied
Sinusodial half wave,
Initial T J = T J max.
I2√t
Maximum I 2√t for fusing
364
V TM
Peak on-state voltage
1.80
V
VO
Forward conduction thershold
voltage
1.20
V
r
Forward conduction slope
resistance
2.4
IH
Holding current
300
mA
T J = 25 0C, Anode supply 12V resistive load
IL
Latching current
600
mA
T J = 25 0 C, Anode supply 12V resistive load
81RK
Units
t = 0.1 to 10ms. No voltage reapplied.
I PK = 250A, T J = 125 0C , t p = 10ms sinewave
m-ohm
TRIGGERING
Parameter
P GM
Maximum peak gate power
P G(AV)
Maximum average gate power
I GM
Max. peak positive gate current
2.0
+V GM
Max. peak positive gate voltage
20
-V GM
Max. peak negative gate voltage
5.0
I GT
V GT
5
W
DC gate current required to trigger
DC gate voltage required to trigger
Conditions
T J = 125 0C, t p ≤ 5ms
T J = 125 0 C, f= 50Hz, d% = 50
1
A
T J = 125 0C, t p ≤ 5ms
V
T J = 125 0C, t p ≤ 5ms
TYP.
MAX.
180
90
40
-150
--
mA
T J = -40 0C
T J = 25 0C
T J = 125 0C
2.9
1.8
1.2
-3.0
--
V
T J = -40 0 C
T J = 25 0C
T J = 125 0 C
I GD
DC gate current not to trigger
10
mA
V GD
DC gate voltage not to trigger
0.25
V
Max. required gate trigger / current /
voltage are the lowest value which will
trigger all units 12V anode-to-cathode
applied.
Max. gate current / voltage not to trigger is
T J = 125 0 C the max. value which will not trigger any unit
with rated VDRM anode-to-cathode applied.
SILICON CONTROLLED RECTIFIERS
81RK SERIES
Switching
Parameter
di/dt
td
Max.rate of rise of on state current
non-repetitive
Typical delay time
81RK
400
2.0
Units
Conditions
A/ µs
Gate drive 20V, 20 ohms with anode voltage ≤ 80%
V DRM, tr ≤ 1 µs, T J - 125 0C
µs
Gate current 1A, di g /dt- 1A/µS, Vd - 0.67% V DRM
T J - 25 0 C
tq
Typical turn-off time
100
µs
I TM = 100A, T J = 125 0C, di/dt = 10A/µs, V R = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, t p = 500µs
Blocking
Parameter
dv/dt
IRRM
IDRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
81RK
400
20
Units
Conditions
V/µs
T J = 125 0 C, linear to 80% rated V DRM
mA
T J = 125 0C, rated V DRM /V RRM applied
SILICON CONTROLLED RECTIFIERS
81RK SERIES
SILICON CONTROLLED RECTIFIERS
81RK SERIES
SILICON CONTROLLED RECTIFIERS
81RK SERIES
Last Update : September 2001