Bulletin I25201 rev. B 03/03
80RIA SERIES
PHASE CONTROL THYRISTORS
Stud Version
Features
Hermetic glass-metal seal
International standard case TO-209AC (TO-94)
80A
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
80RIA
Unit
80
A
85
°C
125
A
@ 50Hz
1900
A
@ 60Hz
1990
A
@ 50Hz
18
KA2s
@ 60Hz
16
KA2s
400 to 1200
V
110
µs
- 40 to 125
°C
IT(AV)
@ TC
IT(RMS)
ITSM
I 2t
V DRM /V RRM
tq
typical
TJ
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case style
TO-209AC (TO-94)
1
80RIA Series
Bulletin I25201 rev. B 03/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
V DRM/V RRM, max. repetitive
VRSM , maximum non-
I DRM/I RRM max.
Code
peak and off-state voltage
repetitive peak voltage
@ TJ = 125°C
V
V
mA
40
400
500
80
800
900
120
1200
1300
80RIA
15
On-state Conduction
Parameter
I T(AV)
80RIA
Units
Conditions
Max. average on-state current
80
A
@ Case temperature
85
°C
I T(RMS) Max. RMS on-state current
125
A
I TSM
Max. peak, one-cycle
1900
t = 10ms
non-repetitive surge current
1990
t = 8.3ms
reapplied
1600
t = 10ms
100% VRRM
1675
t = 8.3ms
reapplied
Sinusoidal half wave,
18
t = 10ms
No voltage
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
16
I 2√t
Maximum I2√t for fusing
V T(TO)1 Low level value of threshold
voltage
V T(TO) 2 High level value of threshold
voltage
r t1
Low level value of on-state
High level value of on-state
slope resistance
No voltage
t = 8.3ms
reapplied
t = 10ms
100% VRRM
11.7
t = 8.3ms
reapplied
180.5
KA2 s
KA2√s
t = 0.1 to 10ms, no voltage reapplied
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.99
V
(I > π x IT(AV)),TJ = TJ max.
1.13
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
2.29
mΩ
(I > π x IT(AV)),TJ = TJ max.
1.84
V TM
Max. on-state voltage
1.60
IH
Maximum holding current
200
IL
Typical latching current
400
2
DC @ 75°C case temperature
12.7
slope resistance
r t2
A
180° conduction, half sine wave
V
mA
Ipk= 250A, TJ = 25°C tp = 10ms sine pulse
T J = 25°C, anode supply 12V resistive load
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80RIA Series
Bulletin I25201 rev. B 03/03
Switching
Parameter
di/dt
80RIA
Units
Max. non-repetitive rate of rise
of turned-on current
Conditions
TJ = 125°C, Vd = rated VDRM, ITM = 2xdi/dt snubber
300
A/µs
0.2µF, 15Ω, Gate pulse: 20V, 65Ω, tp = 6µs, tr= 0.5µs
Per JEDEC Standard RS-397, 5.2.2.6.
td
tq
Typical delay time
Gate pulse: 10V, 15Ω source, tp = 6µs, tr = 0.1µs,
1
µs
Typical turn-off time
Vd = rated VDRM, ITM = 50Adc, TJ = 25°C.
ITM = 50A, TJ = TJ max, di/dt = -5A/µs min., VR = 50V,
110
dv/dt = 20V/µs, Gate bias: 0V 25Ω, tp = 500µs
Blocking
Parameter
80RIA
Units
Conditions
dv/dt
Maximum critical rate of rise of
off-state voltage
500
V/µs
TJ = 125°C exponential to 67% rated VDRM
IRRM
IDRM
Max. peak reverse and off-state
leakage current
15
mA
TJ = 125°C rated V DRM /V RRM applied
80RIA
Units
Triggering
Parameter
PGM
Maximum peak gate power
3
IGM
Max. peak positive gate current
3
+VGM
Maximum peak positive
gate voltage
-VGM
Maximum peak negative
W
TJ = TJ max, t p ≤ 5ms
TJ = TJ max, f = 50Hz, d% = 50
A
TJ = TJ max, t p ≤ 5ms
12
PG(AV) Maximum average gate power
Conditions
20
V
TJ = TJ max, tp ≤ 5ms
10
gate voltage
IGT
VGT
Max. DC gate current required
270
to trigger
120
TJ = - 40°C
mA
TJ = 25°C
60
TJ = 125°C
Max. DC gate voltage required
3.5
TJ = - 40°C
to trigger
2.5
V
1.5
TJ = 25°C
TJ = 125°C
IGD
DC gate current not to trigger
6
mA
VGD
DC gate voltage not to trigger
0.25
V
TJ = TJ max
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Max. required gate trigger/ current/ voltage are the lowest value
which will trigger all units 6V anode-to-cathode applied
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
3
80RIA Series
Bulletin I25201 rev. B 03/03
Thermal and Mechanical Specification
Parameter
80RIA
Units
TJ
Max. operating temperature range
-40 to 125
Tstg
Max. storage temperature range
-40 to 150
RthJC Max. thermal resistance,
0.1
case to heatsink
Mounting torque, ± 10%
wt
DC operation
K/W
RthCS Max. thermal resistance,
T
°C
0.30
junction to case
Conditions
Mounting surface, smooth, flat and greased
15.5 (137)
Approximate weight
Case style
14 (120)
Nm
(lbf-in)
130
g
TO-209AC(TO-94)
Non lubricated threads
Lubricated threads
See Outline Table
∆RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction Rectangular conduction Units
180°
0.042
0.030
120°
0.050
0.052
90°
0.064
0.070
60°
0.095
0.100
30°
0.164
0.165
K/W
Conditions
T J = T J max.
Ordering Information Table
Device Code
1
-
2
-
8
0
1
2
RIA 120
3
4
ITAV x 10A
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
3
-
RIA = Essential part number
4
-
Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
5
-
None = Stud base 1/2"-20UNF- 2A threads
NOTE: For Metric Device M12 x 1.75 E6 Contact factory
4
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80RIA Series
Bulletin I25201 rev. B 03/03
Outline Table
GLASS METAL SEAL
16.5 (0.65) MAX.
37
)M
IN.
2.5 (0.10) MAX.
IN.
79
9 .5
( 0.
4.3 (0.17) DIA.
)M
8.5 (0.3) DIA.
(0 .
FLEXIBLE LEAD
20
C.S. 16mm 2
(.025 s.i.)
170 (6.69)
C.S. 0.4 mm
(.0006 s.i.)
2
Fast-on Terminals
AMP. 280000-1
REF-250
RED CATHODE
WHITE GATE
215 (8.46)
55 (2.17) MIN.
10 (0.39)
RED SHRINK
23.5 (0.92) MAX. DIA.
MAX.
10 (0.39) MAX.
24 (0.94) MAX.
WHITE SHRINK
21 (0.83)
157 (6.18)
RED SILICON RUBBER
SW 27
1/2"-20UNF-2A *
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
29.5 (1.16) MAX.
130
80RIA Series
RthJC (DC) = 0.30 K/ W
120
110
Conduc tion Angle
100
30°
60°
90°
120°
90
180°
80
0
10 20
30 40
50 60 70
80 90
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
* FOR METRIC DEVICE: M12 X 1.75 E6
CONTACT FACTORY
130
80RIA Series
RthJC (DC) = 0.30 K/ W
120
110
Conduction Period
100
90
30°
80
60°
90°
120°
180°
DC
70
0
20
40
60
80
100
120
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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140
5
80RIA Series
120
W
K/
0.4
1
=
K/
W
-D
elt
80
A
90
W
K/
100
hS
R t
180°
120°
90°
60°
30°
110
6
0.
1.4
K/
W
RMSLimit
60
R
70
a
Maximum Average On-state Power Loss (W)
Bulletin I25201 rev. B 03/03
2K
/W
50
40
Conduction Angle
3 K/
30
80RIA Series
TJ = 125°C
20
10
W
5 K/ W
0
0
10
20
30
40
50
60
70
80
0
Average On-state Current (A)
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Maximum Average On-state Power Loss (W)
Fig. 3 - On-state Power Loss Characteristics
180
DC
180°
120°
90°
60°
30°
160
140
120
R
th
SA
0.
6
=
0.
4
K/
W
100
80
K/
W
-D
el
ta
1K
/W
RMSLimit
Conduc tion Period
60
R
1.4
K/ W
2 K/
W
3 K/ W
40
80RIA Series
TJ = 125°C
20
5 K/ W
0
0
20
40
60
80
100
120
Average On-state Current (A)
140
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
1800
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
1600
1400
1200
1000
80RIA Series
800
1
10
100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
6
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
2000
Maximum Non Repetitive Surge Current
1900
Versus Pulse Train Duration. Control
1800 Of Conduction May Not Be Maintained.
Initial TJ = 125°C
1700
No Voltage Reapplied
1600
Rated VRRM Reapplied
1500
1400
1300
1200
1100
1000
900
80RIA Series
800
700
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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80RIA Series
Bulletin I25201 rev. B 03/03
Instantaneous On-state Current (A)
10000
1000
100
TJ = 25°C
TJ = 125°C
10
80RIA Series
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
(K/ W)
1
Steady State Value
Transient Thermal Impedance Z
thJC
R thJC = 0.30 K/ W
(DC Operation)
0.1
0.01
80RIA Series
0.001
0.0001
0.001
0.01
0.1
1
10
Sq uare Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Rectangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 30ohms; tr<=0.5 µs
b) Recommended load line for
<=30% rated di/ dt : 20V, 65ohms
10
tr<=1 µs
IGD
0.01
(1) (2)
(a)
(3) (4)
(b)
VGD
0.1
0.001
(1) PGM = 100W, tp = 500µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 2.5ms
(4) PGM = 10W, tp = 5ms
Tj=-40 °C
1
Tj=25 °C
Tj=125 °C
Instantaneous Gate Voltage (V)
100
Device: 80RIA Series
0.1
Frequency Limited by PG(AV)
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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7
80RIA Series
Bulletin I25201 rev. B 03/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03 /03
8
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