05012GOF-050
50 Amp Silicon Controlled Rectifier
Available
DESCRIPTION
This SCR (Silicon Controlled Rectifier) has superior circuit-commutated turn-off time (tq) of
<50 µs.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
Compact TO-208AC package.
•
1200 Amperes max surge current.
•
dv/dt = 200 V/µsec.
•
RoHS compliant version available.
TO-208AC (TO-65)
Package
APPLICATIONS / BENEFITS
•
Economical for medium power applications.
MAXIMUM RATINGS
Parameters/Test Conditions
Junction Temperature
Storage Temperature
Thermal Resistance Junction-to-Case
Thermal Resistance Case-to-Sink
o
Maximum Leakage Current @ T J = 125 C & 1200 V
o
Maximum Reverse Leakage @ T J = 125 C & 1200 V
Symbol
Value
TJ
T STG
R ӨJC
R ӨCS
I DRM
I RRM
-65 to 125
-65 to 150
0.35
0.20
6
6
Unit
o
C
C
o
C/W
o
C/W
mA
mA
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0226, Rev. 2 (120659)
©2011-2012 Microsemi Corporation
Page 1 of 6
05012GOF-050
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Metal TO-65.
TERMINALS: Long = Cathode, Short = Gate, Stud = Anode.
MARKING: SCR symbol, MSC (Microsemi Corporation), Part#, D/C (date code).
POLARITY: See SCR symbol on package.
WEIGHT: 0.56 ounces (16 grams) typical.
Mounting Torque: 25 – 30 inch pounds.
See Package Dimensions on last page.
PART NOMENCLATURE
050 12
G
O
F
-050 (e3)
50 A max average on-state
current
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
1200 V forward & reverse
repetitive blocking voltage
FAST tq rating
o
tq <50 µsec @ 125 C
dv/dt 200 V/µsec
TO-208AC (TO-65) Package
type
Symbol
dv/dt
I TM
tq
TC
TJ
tp
V DRM
VR
SYMBOLS & DEFINITIONS
Definition
Critical rate of rise of off-state voltage. (Any higher will cause false triggering.)
On-state Current: The maximum (peak) total value.
Turn off time.
Case Temperature: The temperature measured at the case.
Junction Temperature: The temperature of the semiconductor junction.
Pulse Time: The time interval between a reference point on a leading edge of a pulse waveform and a reference point
on the trailing edge of the same waveform.
Repetitive Peak Off-State Voltage: The maximum (peak) total value of repetitive peak off-state voltage.
Reverse Voltage: The reverse voltage dc value, no alternating component.
T4-LDS-0226, Rev. 2 (120659)
©2011-2012 Microsemi Corporation
Page 2 of 6
05012GOF-050
ELECTRICAL CHARACTERISTICS
Description
Max. RMS on-state current
Max. average on-state current
Max. peak on-state voltage
Max. holding current
Max. peak one cycle surge current
Max. I2t capability for fusing (Note 1)
NOTES:
Condition
I T(RMS)
I T(AV)
V TM
IH
I TSM
I2 t
Rating
80 A
50 A
2.3 V
200 mA
1200 A
6000 A2S
Notes
T C = 94 °C
T C = 94 °C
I TM = 140 A(peak)
Condition
di/dt
td
tq
Rating
200 A/µs
3.0 µs
50 µs
Notes
T J = 125 oC
T C = 94 °C 60 Hz
t = 8.3 ms
1. Above this rating terminals will melt.
Switching:
Description
Critical role of rise of on-state current (Note 2)
Typical delay time (Note 2)
Typical circuit commuted turn-off time (Note 3)
NOTES:
T J = 125 oC
2. I TM = 50 A, V D = V DRM . GT = 12 V open circuit, 20 ohm – 0.1 µsec, rise time.
3. I TM = 50 A, di/dt = 5 A/µsec, V R during turn-off interval = 50 V min, reapplied dv/dt = 20 V/µsec, linear to rated V DRM , V GT = 0 V.
Triggering:
Description
Max. gate voltage to trigger
Max. non-triggering gate voltage
Max. gate current to trigger
Max. peak gate power
Average gate power
Max. peak gate current
Max. peak gate voltage (forward)
Max. peak gate voltage (reverse)
Condition
V GT
V GD
I GT
P GM
P G(AV)
I GM
V GM
V GM
Rating
3.0 V
0.25 V
100 mA
10 W
1.0 W
3.0 A
20 V
10 V
Notes
Condition
I DRM
I RRM
Rating
6 mA
6 mA
Notes
T J = 125 oC & 1200 V
T J = 125 oC & 1200 V
dv/dt
200 V/µs
T J = 125 oC
tp = 10 µs
Blocking:
Description
Max. leakage current
Max. reverse leakage
Critical rate of rise of off-state voltage as above
false triggering of device
T4-LDS-0226, Rev. 2 (120659)
©2011-2012 Microsemi Corporation
T J = 125 oC
Page 3 of 6
05012GOF-050
Instantaneous On-State Current - Amperes
GRAPHS
Instantaneous On-State Voltage – Volts
Maximum Allowable Case
Temperature - °C
Maximum Power Dissipation - Watts
FIGURE 1
Typical Forward On-State Characteristics
Average On-State Voltage – Amperes
Average On-State Current - Amperes
FIGURE 2
Forward Current Derating
T4-LDS-0226, Rev. 2 (120659)
FIGURE 3
Maximum Power Dissipation
©2011-2012 Microsemi Corporation
Page 4 of 6
05012GOF-050
Junction to Case
Thermal Impedance - °C/Watts
GRAPHS (continued)
Time in Seconds
Peak On-State Current – Amperes
FIGURE 4
Transient Thermal Impedance
Number of Cycles
FIGURE 5
Maximum Non-repetitive Surge Current
T4-LDS-0226, Rev. 2 (120659)
©2011-2012 Microsemi Corporation
Page 5 of 6
05012GOF-050
PACKAGE DIMENSIONS
Notes: 1. ¼ - 28 UNF - 3A.
2. Full thread within 2 ½ threads.
T4-LDS-0226, Rev. 2 (120659)
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
P
R
S
Inches
Minimum Maximum
----.677
.685
--.770
1.200
1.250
.427
.447
.115
.155
--.515
.220
.249
.200
.300
.120
----.667
.065
.085
.145
.155
.055
.065
.025
.030
©2011-2012 Microsemi Corporation
Millimeter
Minimum
Maximum
----17.20
17.40
--19.56
30.48
31.75
10.84
11.35
2.92
3.94
--13.08
5.58
6.32
5.08
7.62
3.05
----16.94
1.65
2.15
3.68
3.93
1.40
1.65
.64
.76
Notes
1
2
Dia.
Dia.
Dia.
Page 6 of 6