Smart Low Side Power Switch
Power HITFET BTS 118D
Features
Product Summary
· Logic Level Input
Drain source voltage
VDS
· Input Protection (ESD)
On-state resistance
RDS(on)
100
mW
· Thermal shutdown with auto restart
Nominal load current
ID(Nom)
2.4
A
• Green product (RoHS compliant)
Clamping energy
EAS
2
J
42
V
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
P / PG-TO252-3-11
· Analog driving possible
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded
protection functions.
Vbb
M
HITFET â
Drain
Current
Limitation
In
Pin 2 and 4 (TAB)
OvervoltageProtection
Gate-Driving
Unit
Pin 1
ESD
Overload
Protection
Overtemperature
Protection
Short circuit
Protection
Pin 3
Source
Complete product spectrum and additional information http://www.infineon.com/hitfet
Datasheet
1
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Drain source voltage
VDS
42
Supply voltage for full short circuit protection
Vbb(SC)
42
Continuous input voltage1)
VIN
Continuous input current2)
IIN
-0.2V £ VIN £ 10V
Value
Unit
V
-0.2 2) ... +10
mA
self limited
VIN < -0.2V or VIN > 10V
| IIN | £ 2
Operating temperature
Tj
-40 ...+150
Storage temperature
Tstg
-55 ... +150
Power dissipation 5)
Ptot
°C
W
TC = 85 °C
21
6cm 2 cooling area , TA = 85 °C
1.1
Unclamped single pulse inductive energy 2)
EAS
2
J
Load dump protection VLoadDump2)3) = VA + VS
VIN = 0 and 10 V, t d = 400 ms, RI = 2 W,
VLD
58
V
2
kV
3
K/W
RL = 6 W, VA = 13.5 V
Electrostatic discharge voltage2) (Human Body Model) VESD
according to Jedec norm
EIA/JESD22-A114-B, Section 4
Thermal resistance
junction - case:
R thJC
SMD: junction - ambient
R thJA
@ min. footprint
115
@ 6 cm 2 cooling area 4)
55
1For input voltages beyond these limits I has to be limited.
IN
2not subject to production test, specified by design
3V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
5not subject to production test, calculated by R
thJA and Rds(on)
Datasheet
2
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Characteristics
VDS(AZ)
Drain source clamp voltage
Values
Unit
min.
typ.
max.
42
-
55
V
Tj = - 40 ...+ 150, ID = 10 mA
IDSS
Off-state drain current
Tj = -40...+85 °C, V DS = 32 V , VIN = 0 V
Tj = 150 °C
µA
-
1.5
8
-
4
12
VIN(th)
Input threshold voltage
ID = 0.6 mA, T j = 25 °C
ID = 0.6 mA, T j = 150 °C
On state input current
IIN(on)
On-state resistance
R DS(on)
V
1.3
1.7
2.2
0.8
-
-
-
10
30
µA
mW
VIN = 5 V, ID = 2.2 A, Tj = 25 °C
-
90
120
VIN = 5 V, ID = 2.2 A, Tj = 150 °C
-
160
240
-
70
100
-
130
200
R DS(on)
On-state resistance
VIN = 10 V, I D = 2.2 A, T j = 25 °C
VIN = 10 V, I D = 2.2 A, T j = 150 °C
Nominal load current 5)
ID(Nom)
2.4
3.2
-
Tj < 150°C, V IN = 10 V, TA = 85 °C, SMD 1)
Nominal load current 5)
ID(ISO)
3.5
5
-
VIN = 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150°C
Current limit (active if VDS>2.5 V)2)
ID(lim)
10
15
20
A
VIN = 10 V, VDS = 12 V, t m = 200 µs
1@ 6 cm2 cooling area
2Device switched on into existing short circuit (see diagram Determination of I
D(lim) ). If the device is in on condit
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5not subject to production test, calculated by R
thJA and Rds(on)
Datasheet
3
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
ton
-
40
100
toff
-
70
100
-dVDS/dt on
-
0.4
1.5
dVDS/dtoff
-
0.6
1.5
150
175
-
°C
K
Dynamic Characteristics
Turn-on time
VIN to 90% ID :
µs
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
VIN to 10% ID:
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb:
Turn-off time
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
V/µs
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions1)
Thermal overload trip temperature
Tjt
Thermal hysteresis 2)
DT jt
-
10
-
Input current protection mode
IIN(Prot)
-
100
300
EAS
2
-
-
J
VSD
-
1.0
1.5
V
µA
Tj = 150 °C
Unclamped single pulse inductive energy 2)
ID = 2.2 A, Tj = 25 °C, Vbb = 12 V
Inverse Diode
Inverse diode forward voltage
IF = 10.9 A, tm = 250 µs, V IN = 0 V,
tP = 300 µs
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
Datasheet
4
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
Block diagram
Inductive and overvoltage
output clamp
Terms
RL
V
2
I IN
1
D
Z
D
IN
ID
VDS
Vbb
HITFET
S
S
3
VIN
HITFET
Short circuit behaviour
Input circuit (ESD protection)
Gate Drive
Input
VIN
Source/
Ground
IIN
IDS
Tj
Datasheet
5
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
1 Maximum allowable power dissipation
2 On-state resistance
Ptot = f(TC) resp.
R ON = f(Tj); ID =2.2A; VIN=10V
Ptot = f(TA) @ R thJA=55 K/W
3
225
mW
max.
W
Rthjc = 3 K/W
RDS(on)
175
Ptot
2
SMD @ 6cm2
150
typ.
125
1.5
100
1
75
50
0.5
25
0
-50
-25
0
25
50
75
100
°C
0
-50
150
-25
0
25
50
75
100 125 °C
TA;TC
3 On-state resistance
4 Typ. input threshold voltage
R ON = f(Tj); I D=2.2A; V IN=5V
VIN(th) = f(Tj); ID = 0.3 mA; V DS = 12V
250
2
max.
mW
V
200
1.6
VGS(th)
RDS(on)
175
Tj
175
typ.
150
1.4
1.2
125
1
100
0.8
75
0.6
50
0.4
25
0.2
0
-50
-25
0
25
50
75
100 125 °C
0
-50
175
Tj
Datasheet
-25
0
25
50
75
100
°C
150
Tj
6
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
5 Typ. transfer characteristics
6 Typ. short circuit current
I D=f(V IN); VDS=12V; T Jstart=25°C
ID(lim) = f(Tj); VDS=12V
Parameter: V IN
16
24
A
A
12
10
ID
ID
20
18
8
16
6
14
Vin=10V
12
5V
4
2
0
1
2
3
4
5
6
7
V
8
10
-50
10
-25
0
25
50
75
VIN
175
Tj
7 Typ. output characteristics
8 Off-state drain current
I D=f(V DS); T Jstart=25°C
Parameter: V IN
IDSS = f(T j)
20
13
µA
Vin=10V
A
100 125 °C
7V
max.
11
16
6V
10
ID
IDSS
5V
14
4V
12
9
8
7
10
6
8
5
6
typ.
4
3V
3
4
2
2
1
0
0
1
2
3
4
V
0
-50
6
VDS
Datasheet
-25
0
25
50
75
100 125 °C
175
Tj
7
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
9 Typ. overload current
10 Typ. transient thermal impedance
ID(lim) = f(t), Vbb=12 V, no heatsink
Parameter: Tjstart
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: D=tp/T
10
25
2
K/W
A
-40°C
10
D=0.5
1
0.2
ZthJA
ID(lim)
0.1
25°C
15
10
0
0.05
0.02
0.01
85°C
10
10
-1
10
-2
+150°C
5
Single pulse
0
0
10
0.5
1
1.5
2
2.5
3
3.5
ms
4
5
-3
-8
-7
-6
-5
-4
-3
-2
-1
0
1
10 10 10 10 10 10 10 10 10 10 10
2
s 10
4
tp
t
11 Determination of ID(lim)
ID(lim) = f(t); t m = 200µs
Parameter: TJstart
25
ID(lim)
A
-40°C
15
25°C
85°C
10
150°C
5
0
0
0.1
0.2
0.3
0.4
ms
0.6
t
Datasheet
8
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
Package Outlines
Package Outlines
6.5 +0.15
-0.05
A
B
(5)
0.15 MAX.
per side
0.5 +0.08
-0.04
0.9 +0.20
-0.01
0...0.15
0.8 ±0.15
(4.24) 1 ±0.1
9.98 ±0.5
6.22 -0.2
5.4 ±0.1
2.3 +0.05
-0.10
0.51 MIN.
1
3x
0.75 ±0.1
0.5 +0.08
-0.04
2.28
4.57
0.1 B
0.25
M
A B
All metal surfaces tin plated,
except area of cut.
GPT09277
Figure 1
PG-TO252-3-11 (Plastic Dual Small Outline Package) (RoHS-Compliant)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Datasheet
9
Dimensions in mm
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
Revision History
2
Revision History
Version
Rev. 1.3
Date
Changes
2006-12-22
released automotive green and robust version (BTS)
Package parameter (humidity and climatic) removed in Maximum ratings
Rev. 1.2
2006-12-11
AEC icon added
RoHS icon added
Green product (RoHS-compliant) added to the feature list
Package information updated to green
Green explanation added
Rev. 1.1
2006-08-08
released non automotive green version (ITS)
Rev. 1.0
2004-03-05
released production version
Datasheet
10
Rev. 1.3, 2006-12-22
Edition 2006-12-22
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
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disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
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