Smart Low Side Power Switch
HITFET BSP 76
Features
Product Summary
· Logic Level Input
Drain source voltage
VDS
· Input Protection (ESD)
On-state resistance
RDS(on)
200
mW
· Thermal shutdown with auto restart
Nominal load current
ID(Nom)
1.4
A
• Green product (RoHS compliant)
Clamping energy
EAS
150
mJ
42
V
· Overload protection
· Short circuit protection
4
· Overvoltage protection
· Current limitation
3
2
· Analog driving possible
1
VPS05163
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded
protection functions.
Vbb
M
HITFET â
Drain
Current
Limitation
In
Pin 2 and 4 (TAB)
OvervoltageProtection
Gate-Driving
Unit
Pin 1
ESD
Overload
Protection
Overtemperature
Protection
Short circuit
Protection
Pin 3
Source
Complete product spectrum and additional information http://www.infineon.com/hitfet
Datasheet
1
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 76
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Drain source voltage
VDS
42
Supply voltage for full short circuit protection
Vbb(SC)
42
Continuous input voltage1)
VIN
Continuous input current2)
IIN
-0.2V £ VIN £ 10V
Value
Unit
V
-0.22) ... +10
mA
self limited
VIN < -0.2V or VIN > 10V
| IIN | £ 2
Operating temperature
Tj
-40 ...+150
Storage temperature
Tstg
-55 ... +150
Power dissipation 5)
Ptot
3.8
W
Unclamped single pulse inductive energy 2)
EAS
150
mJ
Load dump protection VLoadDump2)3) = VA + VS
VIN = 0 and 10 V, t d = 400 ms, RI = 2 W,
VLD
50
V
2
kV
°C
TC = 85 °C
RL = 9 W, VA = 13.5 V
Electrostatic discharge voltage2) (Human Body Model) VESD
according to Jedec norm
EIA/JESD22-A114-B, Section 4
Thermal resistance
R thJA
junction - ambient:
K/W
@ min. footprint
125
@ 6 cm 2 cooling area 4)
72
R thJS
junction-soldering point:
17
K/W
1For input voltages beyond these limits I has to be limited.
IN
2not subject to production test, specified by design
3V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
5not subject to production test, calculated by R
thJA and Rds(on)
Datasheet
2
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 76
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Characteristics
VDS(AZ)
Drain source clamp voltage
Values
Unit
min.
typ.
max.
42
-
55
V
Tj = - 40 ...+ 150, ID = 10 mA
IDSS
Off-state drain current
Tj = -40...+85 °C, V bb = 32 V, VIN = 0 V
Tj = 150 °C
µA
-
1.5
8
-
4
10
VIN(th)
Input threshold voltage
ID = 0.3 mA, Tj = 25 °C
ID = 0.3 mA, Tj = 150 °C
On state input current
IIN(on)
On-state resistance
R DS(on)
V
1.3
1.7
2.2
0.8
-
-
-
10
30
µA
mW
VIN = 5 V, ID = 1.4 A, Tj = 25 °C
-
190
240
VIN = 5 V, ID = 1.4 A, Tj = 150 °C
-
350
480
-
150
200
-
280
400
1.4
1.8
-
5
7.5
10
R DS(on)
On-state resistance
VIN = 10 V, I D = 1.4 A, T j = 25 °C
VIN = 10 V, I D = 1.4 A, T j = 150 °C
ID(Nom)
Nominal load current 5)
A
VDS = 0.5 V, Tj < 150°C, VIN = 10 V, T A = 85 °C
Current limit (active if VDS>2.5 V)1)
ID(lim)
VIN = 10 V, VDS = 12 V, t m = 200 µs
1Device switched on into existing short circuit (see diagram Determination of I
D(lim) ). If the device is in on condit
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5not subject to production test, calculated by R
thJA and Rds(on)
Datasheet
3
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 76
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
ton
-
45
100
toff
-
60
100
-dVDS/dt on
-
0.4
1.5
dVDS/dtoff
-
0.6
1.5
150
175
-
°C
K
Dynamic Characteristics
Turn-on time
VIN to 90% ID :
µs
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
VIN to 10% ID:
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb:
Turn-off time
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
V/µs
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions1)
Thermal overload trip temperature
Tjt
Thermal hysteresis 2)
DT jt
-
10
-
Input current protection mode
IIN(Prot)
-
40
300
µA
EAS
150
-
-
mJ
VSD
-
1
1.5
Tj = 150 °C
Unclamped single pulse inductive energy 2)
ID = 1.4 A, Tj = 25 °C, Vbb = 12 V
Inverse Diode
Inverse diode forward voltage
V
IF = 7 A, tm = 250 µs, VIN = 0 V,
tP = 300 µs
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
Datasheet
4
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 76
Block diagram
Inductive and overvoltage
output clamp
Terms
RL
V
2
I IN
1
D
Z
D
IN
ID
VDS
Vbb
HITFET
S
S
3
VIN
HITFET
Short circuit behaviour
Input circuit (ESD protection)
Gate Drive
Input
VIN
Source/
Ground
IIN
IDS
Tj
Datasheet
5
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 76
1 Maximum allowable power dissipation
2 On-state resistance
Ptot = f(TS) resp.
R ON = f(Tj ); ID=1.4A; V IN=10V
Ptot = f(TA) @ R thJA=72 K/W
10
500
W
mW
8
RDS(on)
max.
7
Ptot
max.
400
6
350
300
5
250
4
200
3
150
2 6cm2
100
1
0
-75
typ.
50
-50
-25
0
25
50
75
100 °C
0
-50
150
-25
0
25
50
75
100 125 °C
TS ;TA
3 On-state resistance
4 Typ. input threshold voltage
R ON = f(T j); ID= 1.4A; V IN=5V
VIN(th) = f(Tj); ID = 0.15 mA; VDS = 12V
500
2
max.
mW
V
400
1.6
VGS(th)
RDS(on)
175
Tj
typ.
350
300
1.4
1.2
250
1
200
0.8
150
0.6
100
0.4
50
0.2
0
-50
-25
0
25
50
75
100 125 °C
0
-50
175
Tj
Datasheet
-25
0
25
50
75
100
°C
150
Tj
6
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 76
5 Typ. transfer characteristics
6 Typ. short circuit current
I D=f(V IN); VDS=12V; T Jstart=25°C
ID(lim) = f(Tj); VDS=12V
Parameter: V IN
10
8
A
A
8
7
ID(lim)
ID
6
5
6
Vin=10V
5
4
5V
4
3
3
2
2
1
0
0
1
1
2
3
4
5
6
7
8
V
0
-50
10
-25
0
25
50
75
VIN
8 Off-state drain current
I D=f(V DS); T Jstart=25°C
Parameter: V IN
IDSS = f(T j)
10
175
Tj
7 Typ. output characteristics
Vin=10V
A
100 125 °C
11
µA
7V
max.
9
8
6V
8
5V
6
IDSS
ID
7
4V
7
6
5
5
4
typ.
4
3
3
3V
2
2
1
0
0
1
1
2
3
4
V
0
-50
6
VDS
Datasheet
-25
0
25
50
75
100 125 °C
175
Tj
7
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 76
9 Typ. overload current
10 Typ. transient thermal impedance
ID(lim) = f(t), Vbb=12 V, no heatsink
Parameter: Tjstart
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: D=tp/T
10
12
2
K/W
D=0.5
A
-40°C
0.2
1
0.1
25°C
ZthJA
ID(lim)
10
8
0.05
85°C
10
6
0
0.02
0.01
150°C
4
10
-1
10
-2
2
Single pulse
0
0
0.5
1
1.5
2
2.5
3
ms
4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
s 10
4
tp
t
11 Determination of ID(lim)
ID(lim) = f(t); t m = 200µs
Parameter: TJstart
12
ID(lim)
A
-40°C
8
25°C
85°C
6
4
150°C
2
0
0
0.1
0.2
0.3
0.4
ms
0.55
t
Datasheet
8
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 76
Package Outlines
Package Outlines
1.6±0.1
6.5 ±0.2
A
0.1 MAX.
3 ±0.1
7 ±0.3
3
2
0.5 MIN.
1
2.3
0.7 ±0.1
B
15˚ MAX.
4
3.5 ±0.2
1
4.6
0.28 ±0.04
0...10˚
0.25 M A
0.25 M B
GPS05560
Figure 1
PG-SOT223-4 (Plastic Green Small Outline Transistor Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Datasheet
9
Dimensions in mm
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 76
Revision History
2
Revision History
Version
Rev. 1.3
Date
Changes
2008-04-14
Package information updated to SOT223-4
Rev. 1.2
2007-03-28
released automotive green version
Package parameter (humidity and climatic) removed in Maximum ratings
AEC icon added
RoHS icon added
Green product (RoHS-compliant) added to the feature list
Package information updated to green
Green explanation added
Rev. 1.1
2004-03-05
released production version
Datasheet
10
Rev. 1.3, 2008-04-14
Edition 2008-04-14
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2008.
All Rights Reserved.
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stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
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question please contact your nearest Infineon Technologies Office.
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