Smart Low Side Power Switch
HITFET BTS 141
Features
Product Summary
• Logic Level Input
Drain source voltage
VDS
60
V
• Input Protection (ESD)
On-state resistance
RDS(on)
28
mΩ
•=Thermal shutdown with latch
Current limit
I D(lim)
25
A
• Overload protection
Nominal load current
I D(ISO)
12
A
• Short circuit protection
Clamping energy
EAS
4000 mJ
• Overvoltage protection
• Current
limitation
• Status feedback with external input resistor
• Analog driving possible
• AEC
qualified
• Green product (RoHS compliant)
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS  chip on chip technology. Providing embedded protection functions.
V bb
+
LOAD
M
D rain
2
dv /d t
lim ita tio n
1
IN
ESD
O v erloa d
pro te ctio n
C u rre n t
O ve rvoltag e
p rotection
lim ita tio n
O ve rte m pe rature
p ro te ctio n
Sh
ho
rt circ
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it
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ort
uit
pprotection
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3
H IT F E T
Datasheet
1
Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 141
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Drain source voltage
VDS
60
Drain source voltage for short circuit protection
Continuous input current 1)
VDS(SC)
32
Value
Unit
V
IIN
mA
-0.2V ≤ VIN ≤ 10V
no limit
VIN < -0.2V or VIN > 10V
| IIN | ≤ 2
Operating temperature
Tj
- 40 ... +150
Storage temperature
Tstg
- 55 ... +150
Power dissipation
Ptot
149
W
EAS
4000
mJ
3000
V
°C
TC = 25 °C
Unclamped single pulse inductive energy
ID(ISO) = 12 A
Electrostatic discharge voltage (Human Body Model) VESD
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection VLoadDump2) = VA + VS
VLD
VIN=low or high; VA =13.5 V
td = 400 ms, RI = 2 Ω, ID =0,5*12A
td = 400 ms, RI = 2 Ω, ID = 12A
100
84
Thermal resistance
junction - case:
R thJC
0.84
junction - ambient:
R thJA
75
SMD version, device on PCB: 3)
R thJA
45
K/W
1In case of thermal shutdown a minimum sensor holding current of 500 µA has to be guaranteed (see also page 3).
2V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Drain connection.
PCB mounted vertical without blown air.
Datasheet
2
Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 141
Electrical Characteristics
Parameter
Symbol
at Tj=25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
60
-
73
V
-
-
20
µA
1.3
1.7
2.2
V
µA
Characteristics
Drain source clamp voltage
VDS(AZ)
Tj = - 40 ...+ 150°C, ID = 10 mA
Off state drain current
IDSS
VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V
Input threshold voltage
VIN(th)
ID = 2,7 mA
Input current - normal operation, ID<ID(lim):
VIN = 10 V
IIN(1)
-
35
100
Input current - current limitation mode, ID =ID(lim):
VIN = 10 V
IIN(2)
-
270
500
Input current - after thermal shutdown, ID=0 A:
VIN = 10 V
IIN(3)
1000
2500
4000
Input holding current after thermal shutdown 1)
IIN(H)
Tj = 25 °C
500
-
-
Tj = 150 °C
300
-
-
R DS(on)
On-state resistance
VIN = 5 V, ID = 12 A, T j = 25 °C
VIN = 5 V, ID = 12 A, T j = 150 °C
mΩ
-
31
34
-
52
68
VIN = 10 V, I D = 12 A, Tj = 25 °C
-
25
28
VIN = 10 V, I D = 12 A, Tj = 150 °C
-
45
56
12
-
-
R DS(on)
On-state resistance
ID(ISO)
Nominal load current (ISO 10483)
A
VIN = 10 V, VDS = 0.5 V, TC = 85 °C
1If the input current is limited by external components, low drain currents can flow and heat the device.
Auto restart behaviour can occur.
Datasheet
3
Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 141
Electrical Characteristics
Parameter
Symbol
at T j=25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
-
100
-
25
35
50
ton
-
40
100
toff
-
70
170
-dVDS/dton
-
1
3
dVDS/dtoff
-
1
3
150
165
-
Characteristics
ID(SCp)
Initial peak short circuit current limit
A
VIN = 10 V, VDS = 12 V
ID(lim)
Current limit 1)
VIN = 10 V, VDS = 12 V, tm = 350 µs,
Tj = -40...+150 °C
Dynamic Characteristics
VIN to 90% ID :
RL = 2,2 Ω, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time
VIN to 10% ID :
Turn-on time
µs
RL = 2,2 Ω, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb :
V/µs
RL = 2,2 Ω, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
RL = 2,2 Ω, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions 2)
Thermal overload trip temperature
Tjt
Unclamped single pulse inductive energy
EAS
°C
mJ
ID = 12 A, Tj = 25 °C, Vbb = 32 V
4000
-
-
ID = 12 A, Tj = 150 °C, Vbb = 32 V
900
-
-
-
1.13
-
Inverse Diode
VSD
Inverse diode forward voltage
V
IF = 5*12A, tm = 300 µS, VIN = 0 V
1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
2Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
Datasheet
4
Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 141
Block Diagramm
Terms
Inductive and overvoltage output clamp
RL
V
Z
D
2
I IN
1
D
IN
ID
VDS
Vbb
S
HITFET
S
3
HITFET
VIN
Short circuit behaviour
Input circuit (ESD protection)
V IN
I D(SCp)
IN
I D(Lim)
ID
ESD-ZD I
Source
t0
ESD zener diodes are not designed
for DC current > 2 mA @ VIN >10V.
t0:
tm
t1
t2
Turn on into a short circuit
tm: Measurementpoint for ID(lim)
t1: Activation of the fast temperature sensor and
regulation of the drain current to a level where
the junction temperature remains constant.
t2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
Datasheet
5
Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 141
Maximum allowable power dissipation
On-state resistance
Ptot = f(Tc )
RON = f(Tj ); ID=12A; VIN =10V
BTS 141
60
160
Ω
W
RDS(on)
Ptot
120
100
40
max.
30
80
typ.
60
20
40
10
20
0
0
20
40
60
80
100
120
°C
0
-50
160
-25
0
25
50
75
100
°C
150
Tj
150
On-state resistance
Typ. input threshold voltage
R ON = f(Tj ); ID= 12A; V IN=5V
VIN(th) = f(Tj); ID =2,7mA; VDS =12V
70
2.0
V
Ω
50
VIN(th)
RDS(on)
1.6
max.
40
1.4
1.2
1.0
typ.
30
0.8
0.6
20
0.4
10
0.2
0
-50
-25
0
25
50
75
100
°C
0.0
-50
150
Tj
Datasheet
-25
0
25
50
75
100
°C
150
Tj
6
Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 141
Typ. transfer characteristics
Typ. output characteristic
ID = f(VIN); VDS =12V; Tj =25°C
ID = f(VDS); Tj =25°C
Parameter: V IN
28
35
A
A
10V
6V
5V
20
25
ID
ID
4V
16
20
12
15
8
10
4
5
0
0
1
2
3
4
5
V
6
0
0
8
VIN
Vin=3V
1
2
3
4
V
6
VDS
Transient thermal impedance
Z thJC = f (t p)
parameter : D = t p/T
10
1
K/W
0
ZthJC
10
D=0.5
0.2
10
-1
0.1
0.05
0.02
10
-2
0.01
0.005
0
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
10
2
tP
Datasheet
7
Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 141
Application examples:
Status signal of thermal shutdown by
monitoring input current
R St
IN
µC
V
IN
D
HITFET
V
bb
S
∆V
V
IN
thermal shutdown
∆V = RST *IIN(3)
Datasheet
8
Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 141
Package Outlines
1
Package Outlines
4.4
10 ±0.2
B
2.4
1)
9.25 ±0.2
A
1.3 ±0.3
0.05
4.7 ±0.5
0.1
0...0.15
1.05
2.7 ±0.3
8.5
7.55 1) 1 ±0.3
(15)
0...0.3
1.27 ±0.1
0.5 ±0.1
8˚ MAX.
0.75 ±0.1
2.54
5.08
0.1 B
0.25
A B
M
1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
PG-TO220-3-5-PO V03
Figure 1
PG-TO220-3-5 (Plastic Dual Small Outline Package) (RoHS-Compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Datasheet
9
Dimensions in mm
Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 141
Revision History
2
Revision History
Version
Rev. 1.3
Date
Changes
2008-12-10
released automotive green and robust version
Package drawing updated
Rev. 1.2
2008-08-11
Package information updated, removed through hole versions
Rev. 1.1
2008-02-22
Package parameter (humidity and climatic) removed in Maximum ratings
AEC icon and RoHS icon added
Green product and AEC qualified added to the feature list
added Protection footnote on Page 4 and changed front page general description
Package information updated to green
Green explanation added
Rev. 1.0
2000-05-19
released production version
Datasheet
10
Rev. 1.3, 2008-12-10
Edition 2008-12-10
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2008.
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
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question please contact your nearest Infineon Technologies Office.
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