Smart Low Side Power Switch
HITFET BTS 3134N
Features
Product Summary
· Logic Level Input
Drain source voltage
VDS
42
· Input Protection (ESD)
On-state resistance
RDS(on)
50
m
· Thermal shutdown
Nominal load current
I D(Nom)
3
A
• Green product (RoHS compliant)
Clamping energy
EAS
V
500
mJ
· Overload protection
· Short circuit protection
4
· Overvoltage protection
· Current limitation
3
· Analog driving possible
2
1
VPS05163
Application
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
µC compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Vbb
M
Drain
HITFET
Current
Limitation
In
Pin 2 and 4 (TAB)
OvervoltageProtection
Gate-Driving
Unit
Pin 1
ESD
Overload
Protection
Overtemperature
Protection
Short circuit
Protection
Pin 3
Source
Datasheet
1
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3134N
Maximum Ratings at T j = 25°C, unless otherwise specified
Parameter
Symbol
Value
Drain source voltage
VDS
42
Drain source voltage for short circuit protection
VDS(SC)
30
Unit
V
T j = -40...150°C
IIN
Continuous input current
mA
-0.2V VIN 10V
no limit
VIN < -0.2V or VIN > 10V
Operating temperature
| IIN | 2
Tj
-40 ...+150
Storage temperature
Tstg
-55 ... +150
Power dissipation
Ptot
3.8
W
Unclamped single pulse inductive energy 1)
EAS
500
mJ
Load dump protection VLoadDump2) = V A + VS
VIN = 0 and 10 V, t d = 400 ms, RI = 2 ,
VLD
53.5
V
2
kV
°C
T C = 85 °C
R L = 4.5 , VA = 13.5 V
Electrostatic discharge voltage (Human Body Model) VESD
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Thermal resistance
RthJA
junction - ambient:
K/W
@ min. footprint
125
@ 6 cm2 cooling area 3)
72
RthJS
junction-soldering point:
17
K/W
1 Not tested, specified by design.
2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
Datasheet
2
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3134N
Electrical Characteristics
Symbol
Parameter
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
42
-
55
V
-
1.5
10
µA
Characteristics
VDS(AZ)
Drain source clamp voltage
Tj = - 40 ...+ 150, ID = 10 mA
Off-state drain current Tj = -40 ... +150°C
IDSS
VDS = 32 V, VIN = 0 V
VIN(th)
Input threshold voltage
V
ID = 1.4 mA, Tj = 25 °C
1.3
1.7
2.2
ID = 1.4 mA, Tj = 150 °C
0.8
-
-
-
10
30
On state input current
IIN(on)
On-state resistance
RDS(on)
VIN = 5 V, ID = 3 A, Tj = 25 °C
VIN = 5 V, ID = 3 A, Tj = 150 °C
µA
m
-
45
60
-
75
100
VIN = 10 V, ID = 3 A, Tj = 25 °C
-
35
50
VIN = 10 V, ID = 3 A, Tj = 150 °C
-
65
90
RDS(on)
On-state resistance
ID(Nom)
Nominal load current
VDS = 0.5 V, Tj < 150°C, VIN = 10 V, TA = 85 °C
Current limit (active if VDS>2.5 V)1)
ID(lim)
A
3
-
-
18
24
30
VIN = 10 V, VDS = 12 V, tm = 200 µs
1Device switched on into existing short circuit (see diagram Determination of I
D(lim)). If the device is in on condit
and a short circuit occurs, these values might be exceeded for max. 50 µs.
Datasheet
3
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3134N
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
t on
-
60
100
t off
-
60
100
-dV DS/dt on
-
0.3
1.5
dV DS/dt off
-
0.7
1.5
Dynamic Characteristics
VIN to 90% I D:
R L = 4.7 , VIN = 0 to 10 V, Vbb = 12 V
Turn-off time
VIN to 10% ID:
Turn-on time
R L = 4.7
, VIN = 10 to 0 V, Vbb = 12 V
70 to 50% Vbb:
R L = 4.7 , VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
Slew rate on
R L = 4.7
, VIN = 10 to 0 V, Vbb = 12 V
µs
V/µs
Protection Functions1)
Thermal overload trip temperature
Tjt
150
175
-
°C
Input current protection mode
IIN(Prot)
80
160
300
µA
Input current protection mode
IIN(Prot)
-
130
300
EAS
500
-
-
mJ
VSD
-
1
-
V
Tj = 150 °C
Unclamped single pulse inductive energy 2)
ID = 3 A, Tj = 25 °C, Vbb = 12 V
Inverse Diode
Inverse diode forward voltage
IF = 15 A, tm = 250 µs, VIN = 0 V,
tP = 300 µs
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2 Not tested, specified by design.
Datasheet
4
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3134N
Block diagram
Inductive and overvoltage
output clamp
Terms
RL
V
D
Z
2
I IN
1
D
IN
ID
VDS
Vbb
HITFET
S
S
3
VIN
HITFET
Short circuit behaviour
Input circuit (ESD protection)
V
IN
Gate Drive
Input
I
Source/
Ground
IN
I
D
T
t
t
t
j
t
Datasheet
5
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3134N
1 Maximum allowable power dissipation
2 On-state resistance
Ptot = f(TS) resp.
Ptot = f(TA) @ R thJA=72 K/W
R ON = f(T j); ID=3A; V IN=10V
10
100
m
W
8
80
RDS(on)
max.
7
Ptot
max.
6
70
typ.
60
5
50
4
40
3
30
2 6cm2
20
1
10
0
-75
-50
-25
0
25
50
75
100 °C
0
-50
150
-25
0
25
50
75
100 125 °C
TS ;TA
3 On-state resistance
4 Typ. input threshold voltage
R ON = f(Tj ); ID= 3A; VIN=5V
VIN(th) = f(T j); ID = 0.7 mA; V DS = 12V
2
110
m
V
max.
90
1.6
80
VGS(th)
RDS(on)
175
Tj
typ.
70
1.4
1.2
60
1
50
0.8
40
0.6
30
20
0.4
10
0.2
0
-50
-25
0
25
50
75
100 125 °C
0
-50
175
Tj
Datasheet
-25
0
25
50
75
100
°C
150
Tj
6
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3134N
5 Typ. transfer characteristics
6 Typ. short circuit current
ID =f(VIN ); VDS=12V; TJstart=25°C
I D(lim) = f(Tj); VDS=12V
Parameter: V IN
A
A
20
20
ID
30
ID
30
Vin=10V
15
15
10
10
5
5
0
0
1
2
3
4
5
6
7
8
V
0
-50
10
5V
-25
0
25
50
75
100 125 °C
VIN
175
Tj
7 Typ. output characteristics
8 Typ. off-state drain current
ID =f(VDS ); TJstart =25°C
IDSS = f(Tj )
Parameter: V IN
35
11
µA
max.
A
10V
9
7V
25
I DSS
8
ID
6V
7
5V
20
6
4V
5
15
4
10
Vin=3V
3
2
5
typ.
1
0
0
1
2
3
4
V
0
-50
6
VDS
Datasheet
-25
0
25
50
75
100 125 °C
175
Tj
7
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3134N
9 Typ. overload current
10 Typ. transient thermal impedance
ID(lim) = f(t), Vbb =12 V, no heatsink
Parameter: Tjstart
Z thJA=f(tp) @ 6 cm2 cooling area
Parameter: D=tp/T
10
40
2
K/W
A
D=0.5
10
0.1
ZthJA
I D(lim)
30
0.2
1
-40°C
25
0.05
10
0.02
0
0.01
20
15
10
85°C
150°C
10
-1
10
-2
25°C
5
0
0
Single pulse
0.5
1
1.5
2
2.5
3
ms
t
10
4
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
s
10
3
tp
11 Determination of ID(lim)
ID(lim) = f(t); tm = 200µs
Parameter: TJstart
40
A
I D(lim)
30
-40°C
25
25°C
20
85°C
15
150°C
10
5
0
0
0.1
0.2
0.3
0.4
ms
0.6
t
Datasheet
8
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3134N
Package Outlines
Package Outlines
1.6±0.1
6.5 ±0.2
A
0.1 MAX.
3 ±0.1
7 ±0.3
3
2
0.5 MIN.
1
2.3
0.7 ±0.1
B
15˚ MAX.
4
3.5 ±0.2
1
4.6
0.28 ±0.04
0...10˚
0.25 M A
0.25 M B
GPS05560
Figure 1
PG-SOT223-4 (Plastic Green Small Outline Transistor Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Datasheet
9
Dimensions in mm
Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BTS 3134N
Revision History
2
Revision History
Version
Rev. 1.3
Date
Changes
2008-04-14
Package information updated to SOT223-4
Rev. 1.2
2007-03-28
released automotive green version
Package parameter (humidity and climatic) removed in Maximum ratings
AEC icon added
RoHS icon added
Green product (RoHS-compliant) added to the feature list
Package information updated to green
Green explanation added
Rev. 1.1
2004-02-02
released production version
Datasheet
10
Rev. 1.3, 2008-04-14
Edition 2008-04-14
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2008.
All Rights Reserved.
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stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
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question please contact your nearest Infineon Technologies Office.
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