APM4548AK
Dual Enhancement Mode MOSFET (N-and P-Channel)
Pin Description
Features
•
N-Channel
30V/7A,
RDS(ON) = 18mΩ (typ.) @ VGS = 10V
RDS(ON) = 23mΩ (typ.) @ VGS = 4.5V
•
P-Channel
Top View of SOP − 8
-30V/-6A,
RDS(ON) = 32mΩ (typ.) @ VGS =-10V
RDS(ON) = 42mΩ (typ.) @ VGS =-4.5V
•
•
•
(8) (7)
D1 D1
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
(2)
G1
Applications
•
(6) (5)
D2 D2
Power Management in Notebook Computer,
(4)
G2
S1
(1)
Portable Equipment, and Battery Powered
S2
(3)
N-Channel MOSFET P-Channel MOSFET
Systems
Ordering and Marking Information
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
APM4548A
Assembly Material
Handling Code
Temp. Range
Package Code
APM4548A K :
APM4548A
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2008
1
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APM4548AK
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
N Channel
P Channel
VDSS
Drain-Source Voltage
30
-30
VGSS
Gate-Source Voltage
±20
±20
7
-6
30
-20
2.5
-2.5
ID*
Continuous Drain Current
IDM*
Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD*
Power Dissipation
RθJA*
VGS=10V (N)
VGS=-10V (P)
Unit
V
A
A
150
°C
-55 to 150
TA=25°C
2
TA=100°C
0.8
Thermal Resistance-Junction to Ambient
W
°C/W
62.5
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
APM4548AK
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
Drain-Source Breakdown
Voltage
BVDSS
VGS=0V, IDS=250µA
N-Ch
30
VGS=0V, IDS=-250µA
P-Ch
-30
VDS=24V, VGS=0V
Zero Gate Voltage Drain
Current
IDSS
TJ=85°C
VDS=-24V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
IGSS
RDS(ON)
Gate Leakage Current
a
Drain-Source On-State
Resistance
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2008
V
1
N-Ch
30
-1
P-Ch
-30
VDS=VGS, IDS=250µA
N-Ch
1
1.8
2.5
VDS=VGS, IDS=-250µA
P-Ch
-1
-1.8
-2.5
VGS=±16V, VDS=0V
N-Ch
±10
P-Ch
±10
VGS=10V, IDS=7A
N-Ch
18
24
VGS=-10V, IDS=-6A
P-Ch
32
42
VGS=4.5V, IDS=5A
N-Ch
23
30
VGS=-4.5V, IDS=-5A
P-Ch
42
55
2
µA
V
µA
mΩ
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APM4548AK
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25°C unless otherwise noted)
APM4548AK
Test Condition
Min.
Typ.
Max.
Unit
Diode Characteristics
a
VSD
trr
Qrr
Diode Forward Voltage
1.1
ISD=-2.5A, VGS=0V
P-Ch
-0.8
-1.1
N-Ch
14
P-Ch
15
N-Ch
7
P-Ch
7
N-Ch
3.6
P-Ch
8
N-Ch
990
P-Ch
1150
N-Ch
150
P-Ch
150
N-Ch
115
P-Ch
105
N-Ch
9
17
P-Ch
8
15
N-Ch
10
19
P-Ch
11
21
N-Ch
33
60
P-Ch
49
89
N-Ch
11
21
P-Ch
21
39
N-Ch
20
28
P-Ch
20
28
N-Ch
2.4
P-Ch
2.9
N-Ch
4.5
P-Ch
4
V
ns
nC
b
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
VGS=0V,VDS=0V,F=1MHz
N-Channel
VGS=0V,
VDS=15V,
Frequency=1.0MHz
P-Channel
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
N-Channel
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
P-Channel
VDD=-15V, RL=15Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω
Turn-off Delay Time
Turn-off Fall Time
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
0.8
N-Channel
ISD=7A, dISD/dt=100A/µs
P-Channel
Reverse Recovery Charge ISD=-6A, dISD/dt=100A/µs
RG
Tf
N-Ch
Reverse Recovery Time
Dynamic Characteristics
td(OFF)
ISD=2.5A, VGS=0V
Ω
pF
ns
b
Gate-Drain Charge
N-Channel
VDS=15V, VGS=10V,
IDS=7A
P-Channel
VDS=-15V, VGS=-10V,
IDS=-6A
nC
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2008
3
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APM4548AK
Typical Characteristics
N-Channel
Drain Current
Power Dissipation
2.5
8
7
ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
6
5
4
3
2
0.5
1
o
o
0.0
TA=25 C
0
20
40
60
0
80 100 120 140 160
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Lim
it
10
300µs
Rd
s(o
n)
ID - Drain Current (A)
0
Tj - Junction Temperature (°C)
100
1ms
1
10ms
100ms
0.1
1s
DC
O
TA=25 C
0.01
0.01
TA=25 C,VG=10V
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2008
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM4548AK
Typical Characteristics (Cont.)
N-Channel
Output Characteristics
Drain-Source On Resistance
50
30
VGS= 4, 5, 6, 7, 8, 9, 10V
45
RDS(ON) - On - Resistance (mΩ)
ID - Drain Current (A)
25
3.5V
20
15
10
3V
5
40
VGS=4.5V
35
VGS=10V
30
25
20
2.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
15
3.0
10
15
20
25
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
Normalized Threshold Voltage
60
55
50
45
40
35
30
30
IDS =250µA
ID=7A
65
RDS(ON) - On - Resistance (mΩ)
5
VDS - Drain-Source Voltage (V)
70
1.4
1.2
1.0
0.8
0.6
0.4
25
20
0
1
2
3
4
5
6
7
8
9
0.2
-50 -25
10
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2008
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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APM4548AK
Typical Characteristics (Cont.)
N-Channel
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
30
VGS = 10V
IDS = 7A
10
o
1.4
IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
Tj=150 C
o
Tj=25 C
1
0.6
o
0.4
-50 -25
RON@Tj=25 C: 18mΩ
0
25
50
0.1
0.0
75 100 125 150
1.2
1.6
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
2.0
10
Frequency=1MHz
VDS= 15V
9 I = 7A
D
1000
VGS - Gate - source Voltage (V)
1200
C - Capacitance (pF)
0.8
Tj - Junction Temperature (°C)
1400
Ciss
800
600
400
200
Coss
0
8
7
6
5
4
3
2
1
Crss
0
0.4
5
10
15
20
25
0
30
4
8
12
16
20
24
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2008
0
6
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APM4548AK
Typical Characteristics (Cont.)
P-Channel
Power Dissipation
Drain Current
7
2.5
6
5
-ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
4
3
2
0.5
1
o
0.0
o
TA=25 C
0
20
40
60
0
80 100 120 140 160
40
60
80 100 120 140 160
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
-ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
300us
1ms
1
10ms
100ms
1s
0.1
DC
O
TA=25 C
0.01
0.01
0
Tj - Junction Temperature (°C)
100
10
TA=25 C,VG=-10V
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2008
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
7
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APM4548AK
Typical Characteristics (Cont.)
P-Channel
Output Characteristics
Drain-Source On Resistance
20
65
VGS= -4,-5,-6,-7,-8,-9,-10V
18
60
RDS(ON) - On - Resistance (mΩ)
-3.5V
-ID - Drain Current (A)
16
14
12
10
-3V
8
6
4
-2.5V
2
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS= -4.5V
45
40
VGS= -10V
35
30
20
3.0
0
4
8
12
-ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
Normalized Threshold Voltage
70
60
50
40
30
2
3
4
5
6
7
8
9
IDS = -250µA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
10
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2008
20
1.4
80
1
16
-VDS - Drain - Source Voltage (V)
ID= -6A
RDS(ON) - On - Resistance (mΩ)
50
25
90
20
55
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
8
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APM4548AK
Typical Characteristics (Cont.)
P-Channel
Drain-Source On Resistance
Source-Drain Diode Forward
20
1.8
VGS = -10V
IDS = -6A
10
1.4
o
-IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
0.6
0.4
Tj=150 C
o
Tj=25 C
1
0.2
o
0.0
-50 -25
RON@Tj=25 C: 32mΩ
0
25
50
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
75 100 125 150
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
1600
Frequency=1MHz
C - Capacitance (pF)
1200
-VGS - Gate - source Voltage (V)
1400
Ciss
1000
800
600
400
Coss
200
VDS= -15V
9 I = -6A
D
8
7
6
5
4
3
2
1
Crss
0
0
5
10
15
20
25
0
30
4
8
12
16
20
24
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2008
0
9
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APM4548AK
Package Information
SOP-8
D
E
E1
SEE VIEW A
h X 45
°
c
A
0.25
b
GAUGE PLANE
SEATING PLANE
A1
A2
e
L
VIEW A
S
Y
M
B
O
L
SOP-8
MILLIMETERS
MIN.
INCHES
MAX.
A
MIN.
MAX.
1.75
0.069
0.004
0.25
0.010
A1
0.10
A2
1.25
b
0.31
0.51
0.012
0.020
c
0.17
0.25
0.007
0.010
D
4.80
5.00
0.189
0.197
E
5.80
6.20
0.228
0.244
E1
3.80
4.00
0.150
0.157
e
0.049
1.27 BSC
0.050 BSC
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
0
0°
8°
0°
8°
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2008
10
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APM4548AK
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
SOP-8
A
H
330.0±
2.00
T1
C
d
D
W
E1
F
12.4+2.00 13.0+0.50
-0.00
-0.20 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05
50 MIN.
P0
P1
P2
4.0±0.10
8.0±0.10
2.0±0.05
D0
1.5+0.10
-0.00
D1
1.5 MIN.
T
A0
B0
K0
0.6+0.00 6.40±0.20 5.20±0.20 2.10±0.20
-0.40
(mm)
Devices Per Unit
Package Type
Unit
Quantity
SOP-8
Tape & Reel
2500
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2008
11
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APM4548AK
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Ramp-up
Temperature
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25°C to Peak
Time
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B,A102
MIL-STD-883D-1011.9
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2008
12
Description
245°C, 5 SEC
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C
-65°C~150°C, 200 Cycles
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APM4548AK
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package. Measured on the body surface.
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
3
3
Package Thickness
<2.5 mm
≥2.5 mm
Volume mm
≥350
225 +0/-5°C
225 +0/-5°C
Volume mm
<350
240 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
* Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated
classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL
level.
Package Thickness
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindian City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2008
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