APM9948K
Dual N-Channel Enhancement Mode MOSFET
Pin Description
Features
•
D
D
60V/4A,
D
D
RDS(ON) = 60mΩ(typ.) @ VGS = 10V
RDS(ON) = 72mΩ(typ.) @ VGS = 4.5V
•
•
•
S
Super High Dense Cell Design
G
S
Reliable and Rugged
G
Top View of SOP − 8
Lead Free and Green Devices Available
(RoHS Compliant)
(6) (5)
D2 D2
(8) (7)
D1 D1
Applications
•
(2)
G1
Power Management in DC/DC Converter, DC/AC
(4)
G2
Inverter Systems.
S2
(3)
S1
(1)
N-Channel MOSFET
Ordering and Marking Information
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device
G : Halogen and Lead Free Device
APM9948
Lead Free Code
Handling Code
Temp. Range
Package Code
APM9948 K :
APM9948
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Apr., 2008
1
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APM9948K
Absolute Maximum Ratings
Symbol
(T A = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±20
Continuous Drain Current
IDM*
IS*
300µs Pulsed Drain Current
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
Storage Temperature Range
PD*
Maximum Power Dissipation
RθJA*
V
4
ID*
TSTG
Unit
VGS=10V
A
16
2.5
A
150
°C
-55 to 150
TA=25°C
2
TA=100°C
0.8
Thermal Resistance-Junction to Ambient
W
°C/W
62.5
Note:
*Surface Mounted on 1in2 pad area, t ≤ 10sec.
Electrical Characteristics
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
(TA = 25°C unless otherwise noted)
Test Condition
VGS=0V, IDS=250µA
Gate Leakage Current
VGS=±16V, VDS=0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Apr., 2008
Typ.
Max.
60
1
30
1
1.9
V
±10
µA
60
85
VGS=4.5V, IDS=3A
72
100
ISD=2.5A, VGS=0V
0.8
1.1
2
µA
3
VGS=10V, IDS=4A
ISD=4A, dlSD/dt=100A/µs
Unit
V
TA=85°C
VDS=VGS, IDS=250µA
Diode Characteristics
VSDa
Diode Forward Voltage
Min.
VDS=48V, VGS=0V
Gate Threshold Voltage
RDS(ON) a Drain-Source On-state Resistance
APM9948K
mΩ
V
28
ns
28
nC
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APM9948K
Electrical Characteristics (Cont.)
Symbol
Parameter
Dynamic Characteristics b
RG
Gate Resistance
Test Condition
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
(T A = 25°C unless otherwise noted)
VGS=0V,
VDS=30V,
Frequency=1.0MHz
VDD=30V, RL=30Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
Qg
Total Gate Charge
APM9948K
Min.
Typ.
Unit
Max.
Ω
4.3
600
pF
50
30
7
14
7
14
26
48
4
8
14.2
20
ns
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=30V, VGS=10V,
IDS=4A
1.9
nC
3.2
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Apr., 2008
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APM9948K
Typical Characteristics
Drain Current
2.5
5
2.0
4
ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
1.5
1.0
3
2
0.5
1
0.0
0
o
0
20
40
60
80 100 120 140 160
0
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Rd
s (o
n)
L
im
it
10
Normalized Transient Thermal Resistance
50
ID - Drain Current (A)
TA=25 C,VG=10V
300µs
1
1ms
10ms
100ms
0.1
1s
DC
o
TA=25 C
0.01
0.01
0.1
1
10
Duty = 0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
2
1E-3
1E-4
100 300
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Apr., 2008
2
Mounted on 1in pad
o
RθJA :62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM9948K
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
16
100
VGS= 4,4.5,5,6,7,8,9,10V
95
RDS(ON) - On - Resistance (mΩ)
14
ID - Drain Current (A)
12
10
3.5V
8
6
4
3V
2
90
85
80
VGS=4.5V
75
70
VGS=10V
65
60
55
50
45
0
0.0
0.5
1.0
1.5
2.0
2.5
40
3.0
0
2
4
6
8
14
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
16
1.6
IDS= 250µA
ID=4A
85
1.4
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)
12
VDS - Drain-Source Voltage (V)
90
80
75
70
65
60
55
50
10
1.2
1.0
0.8
0.6
0.4
0.2
2
3
4
5
6
7
8
9
0.0
-50 -25
10
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Apr., 2008
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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APM9948K
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
IDS = 4A
10
1.6
o
1.4
IS - Source Current (A)
Normalized On Resistance
1.8
20
VGS = 10V
1.2
1.0
0.8
0.6
0.4
0.2
RON@Tj=25 C: 60mΩ
0
25
50
75
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1000
10
Frequency=1MHz
900
VDS=30V
VGS - Gate - source Voltage (V)
9
800
C - Capacitance (pF)
o
Tj=25 C
1
o
0.0
-50 -25
700
Ciss
600
500
400
300
200
100
0
0
Tj=150 C
Coss
Crss
7
6
5
4
3
2
1
0
5
10
15
20
25
30
0
3
6
9
12
15
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Apr., 2008
IDS= 4A
8
6
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APM9948K
Package Information
SOP-8
D
E
E1
SEE VIEW A
h X 45
°
c
A
0.25
b
GAUGE PLANE
SEATING PLANE
A1
A2
e
L
VIEW A
S
Y
M
B
O
L
SOP-8
INCHES
MILLIMETERS
MIN.
MAX.
A
MIN.
MAX.
1.75
0.069
0.004
0.25
0.010
A1
0.10
A2
1.25
b
0.31
0.51
0.012
0.020
c
0.17
0.25
0.007
0.010
D
4.80
5.00
0.189
0.197
E
5.80
6.20
0.228
0.244
E1
3.80
4.00
0.150
0.157
e
0.049
1.27 BSC
0.050 BSC
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
0
0°
8°
0°
8°
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Apr., 2008
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APM9948K
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
A
H
T1
330.0±2.00 50 MIN.
SOP-8
C
d
D
12.4+2.00 13.0+0.50
1.5 MIN.
-0.00
-0.20
P0
P1
P2
4.0±0.10
8.0±0.10
2.0±0.05
D0
1.5+0.10
-0.00
D1
1.5 MIN.
W
E1
20.2 MIN. 12.0±0.30 1.75±0.10
F
5.5±0.05
T
A0
B0
K0
0.6+0.00
6.40±0.20 5.20±0.20 2.10±0.20
-0.40
(mm)
Devices Per Unit
Package Type
SOP-8
Unit
Tape & Reel
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Apr., 2008
Quantity
2500
8
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APM9948K
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Time
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B, A102
MIL-STD-883D-1011.9
Description
245°C, 5 sec
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C
-65°C~150°C, 200 Cycles
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Note: All temperatures refer to topside of the package. Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Apr., 2008
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APM9948K
Classification Reflow Profiles (Cont.)
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
3
Package Thickness
Volume mm
<350
<2.5 mm
240 +0/-5°C
≥2.5 mm
225 +0/-5°C
3
Volume mm
≥350
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C)
at the rated MSL level.
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Apr., 2008
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