VS4407AS
-30V/-13A P-Channel Advanced Power MOSFET
Features
 Low On-Resistance
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
V DS
-30
V
R DS(on),typ @ VGS= -10V
11
mΩ
ID
-13
A
Description
VS30P39AP designed by the trench processing techniques to
achieve extremely low on-resistance. Additional features of
this design are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely
efficient and reliable device for use in Power applications and
a wide variety of other supply applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS
Gate-Source Voltage
±20
V
V(BR)DSS
Drain-Source Breakdown Voltage
-30
V
TJ
Maximum Junction Temperature
150
°C
TSTG
Storage Temperature Range
-55 to 150
°C
IS
Diode Continuous Forward Current
TC =25°C
-13
A
Mounted on Large Heat Sink
IDM
Pulse Drain Current Tested ①
TC =25°C
-60
A
ID
Continuous Drain current@VGS=10V
TC =25°C
-13
A
PD
TC =25°C
2.5
W
Maximum Power Dissipation
TC =70°C
1.3
W
R JC
Thermal Resistance-Junction to Case
50
°C/W
R JA
Thermal Resistance Junction-Ambient(ts<10s)
25
°C/W
Copyright Vanguard Semiconductor Co., Ltd
Rev. A– Apr.28th, 2014
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VS4407AS
-30V/-13A P-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Drain-Source Breakdown Voltage
VGS=0V ID=-250μA
-30
--
--
V
Zero Gate Voltage Drain Current(Tc=25℃)
VDS=-24V,VGS=0V
--
--
-1
μA
Zero Gate Voltage Drain Current(Tc=125℃)
VDS=-24V,VGS=0V
--
--
-100
μA
IGSS
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
±100
nA
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=-250μA
-1.0
-1.6
-2.5
V
RDS(ON)
Drain-Source On-State Resistance③
VGS=-10V, ID=-8A
--
11
16
mΩ
RDS(ON)
Drain-Source On-State Resistance③
VGS=-5V, ID=-8A
--
16
26
mΩ
--
1950
--
pF
--
320
--
pF
--
225
--
pF
--
28
--
nC
--
4.5
--
nC
--
9
--
nC
--
9
--
nS
V(BR)DSS
IDSS
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=-10V,VGS=0V,
f=1MHz
VDS=-10V,ID=-10A,
VGS=-10V
Switching Characteristics
t d(on)
Turn-on Delay Time
tr
Turn-on Rise Time
ID=-1A,
--
10
--
nS
t d(off)
Turn-Off Delay Time
RG=6.8Ω,
--
22
--
nS
tf
Turn-Off Fall Time
--
11
--
nS
VDD=-15V,
VGS=-10V
Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)
ISD
Source-drain current(Body Diode)
Tc=25℃
--
--
-60
A
VSD
Forward on voltage
ISD=-10A,VGS=0V
--
--
-1.3
V
t rr
Reverse Recovery Time
Tj=25℃,Isd=-8A,
--
26
--
nS
Qrr
Reverse Recovery Charge
--
35
--
nC
VGS=0V
di/dt=-100A/μs
NOTE:
① Repetitive rating; pulse width limited by max. junction temperature.
② Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS =-12A, VGS =-10V. Part not recommended for use above this value
③ Pulse width ≤ 300μs; duty cycle≤ 2%.
Copyright Vanguard Semiconductor Co., Ltd
Rev. A– Apr.28th, 2014
www.vgsemi.com
VS4407AS
-30V/-13A P-Channel Advanced Power MOSFET
-ID, -Drain-Source Current (A)
-ID, -Drain-Source Current (A)
Typical Characteristics
-VDS,- Drain -Source Voltage (V)
Fig2. Maximum Drain Current Vs.Case Temperature
Normalized On Resistance
-ID, -Drain-Source Current (A)
Fig1. Typical Output Characteristics
Tc - Case Temperature (°C)
-ID,- Drain Current (A)
Tj - Junction Temperature (°C)
Fig4. Normalized On-Resistance Vs. Temperature
P(pk), Peak Transitent Power（W）
-VGS, -Gate -Source Voltage (V)
Fig3. Typical Transfer Characteristics
t1, Time (sec)
Fig5.Typical Peak Transitent Power
Copyright Vanguard Semiconductor Co., Ltd
Rev. A– Apr.28th, 2014
-VDS, -Drain -Source Voltage (V)
Fig6. Maximum Safe Operating Area
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VS4407AS
-VGS, -Gate-Source Voltage (V)
-ISD, -Reverse Drain Current (A)
-30V/-13A P-Channel Advanced Power MOSFET
-VSD, -Source-Drain Voltage (V)
Qg -Total Gate Charge (nC)
Fig8. Typical Gate Charge Vs.Gate-Source Voltage
C, Capacitance (pF)
VGS(TH), Gate -Source Voltage (V)
Fig7. Typical Source-Drain Diode Forward Voltage
Tj - Junction Temperature (°C)
-VDS , -Drain-Source Voltage (V)
Fig9. Threshold Voltage Vs. Temperature
Fig11. Unclamped Inductive Test Circuit and
Copyright Vanguard Semiconductor Co., Ltd
Rev. A– Apr.28th, 2014
Fig10. Typical Capacitance Vs.Drain-Source Voltage
Waveforms
Fig12. Switching Time Test Circuit and waveforms
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VS4407AS
-30V/-13A P-Channel Advanced Power MOSFET
SOP8 Package Outline
DIMENSIONS ( unit : mm )
Symbol
Min
Typ
Max
Symbol
Min
Typ
Max
A
--
1.75
--
A1
0.10
0.18
0.25
A2
1.25
1.35
1.45
A3
--
0.25
--
bp
0.36
0.42
0.49
c
0.19
0.22
0.25
D
4.80
4.92
5.00
E
3.80
3.90
4.00
e
--
1.27
--
HE
5.80
5.98
6.20
L
--
1.05
--
Lp
0.40
0.68
1.00
Q
0.60
0.65
0.70
v
--
0.25
--
w
--
0.25
--
y
--
0.10
--
Z
0.30
0.50
0.70
θ
0°
8°
Product
Marking
Package
Packaging
Min Unit Quantity
VS4407AS
VS4407AS
SOP8
3000/Reel
6000
Customer Service
Sales and Service:
sales@vgsemi.com
Vanguard Semiconductor CO., LTD
TEL: (86-755) -26902410
FAX: (86-755) -26907027
WEB: www.vgsemi.com
Copyright Vanguard Semiconductor Co., Ltd
Rev. A– Apr.28th, 2014
www.vgsemi.com