QFET N-CHANNEL FQP1N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON): 9.3Ω (Typ.) RDS(ON) = 11.5Ω ID = 1.2A TO-220 1 2 3 1. Gate 2. Drain 3. Source ABSOLUTE MAXIMUM RATINGS Symbol VDSS ID Characteristics Value Units Drain-to-Source Voltage 600 V Continuous Drain Current (TC = 25°C) 1.2 Continuous Drain Current (TC = 100°C) 0.76 IDM Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR ① A 4.8 A ±30 V ② 50 mJ Avalanche Current ① 1.2 A EAR Repetitive Avalanche Energy ① 4.0 mJ dv/dt Peak Diode Recovery dv/dt ③ 4.5 V/ns 40 0.32 W W/°C PD TJ, TSTG TL Total Power Dissipation (TC = 25°C) Linear Derating Factor Operating Junction and Storage Temperature Range −55 to +150 °C Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds 300 THERMAL RESISTANCE Symbol Characteristics Typ. Max. RθJC Junction-to-Case − 3.13 RθCS Case-to-Sink 0.5 − RθJA Junction-to-Ambient − 62.5 Units °C/W REV. B 1 1999 Fairchild Semiconductor Corporation FQP1N60 QFET N-CHANNEL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) Symbol Characteristics Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown Voltage 600 − − V ∆BV/∆TJ Breakdown Voltage Temp. Coeff. − 0.4 − V/°C 3.0 − 5.0 V Gate-Source Leakage, Forward − − 100 Gate-Source Leakage, Reverse − − −100 − − 10 − − 100 Static Drain-Source On-State Resistance − 9.3 11.5 Ω VGS=10V, ID=0.6A ④ gfs Forward Transconductance − 0.9 − S VDS=50V, ID=0.6A ④ Ciss Input Capacitance − 120 150 Coss Output Capacitance − 20 25 pF Crss Reverse Transfer Capacitance − 3.0 4.0 VGS=0V, VDS=25V f=1MHz See Fig 5 td(on) Turn-On Delay Time − 5 20 Rise Time − 25 60 Turn-Off Delay Time − 7 25 ns VDD=300V, ID=1.2A RG=50Ω See Fig 13 ④⑤ Fall Time − 25 60 Qg Total Gate Charge − 5.0 6.0 Qgs Gate-Source Charge − 1.0 − nC Qgd Gate-Drain (Miller) Charge − 2.6 − VDS=480V, VGS=10V ID=1.2A See Fig 6 & Fig 12 ④ ⑤ VGS(th) IGSS IDSS RDS(on) tr td(off) tf Gate Threshold Voltage Drain-to-Source Leakage Current nA µA VGS=0V, ID=250µA ID=250µA, See Fig 7 VDS=5V, ID=250µA VGS=30V VGS= −30V VDS=600V VDS=480V, TC=125°C SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristics Continuous Source Current Min. Typ. Max. − − 1.2 Test Conditions A Integral reverse pn-diode in the MOSFET ISM Pulsed-Source Current ① − − 4.8 VSD Diode Forward Voltage ④ − − 1.4 V TJ=25°C, IS=1.2A, VGS=0V trr Reverse Recovery Time − 160 − ns Qrr Reverse Recovery Charge − 0.3 − µC TJ=25°C, IF=1.2A, VDD=480V diF/dt=100A/µs ④ Notes: ① Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature ② L=64mH, IAS=1.2A, VDD=50V, RG=25Ω, Starting TJ =25°C ③ ISD ≤ 1.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ =25°C ④ Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% ⑤ Essentially Independent of Operating Temperature 2 Units QFET N-CHANNEL FQP1N60 Fig 1. Output Characteristics Fig 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 0 ID, Drain Current [A] 10 ID , Drain Current [A] Top : -1 10 0 10 150¡É 25¡É -55¡É ¡Ø Note : 1. 250¥ìs Pulse Test 2. TC = 25¡É -2 10 ¡Ø Note 1. VDS = 50V 2. 250¥ìs Pulse Test -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage RDS(ON) [¥Ø], Drain-Source On-Resistance 25 IDR , Reverse Drain Current [A] 30 VGS = 10V VGS = 20V 20 15 10 5 0 10 150¡É 25¡É ¡Ø Note : 1. VGS = 0V 2. 250¥ìs Pulse Test ¡Ø Note : TJ = 25¡É 0 0.0 -1 0.5 1.0 1.5 2.0 2.5 10 0.2 0.4 0.6 Fig 5. Capacitance vs. Drain-Source Voltage 1.0 1.2 1.4 1.6 Fig 6. Gate Charge vs. Gate-Source Voltage 200 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 100 ¡Ø Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 50 VDS = 120V 10 VGS , Gate-Source Voltage [V] Ciss 150 Capacitances [pF] 0.8 VSD , Source-Drain Voltage [V] ID, Drain Current [A] VDS = 300V VDS = 480V 8 6 4 2 ¡Ø Note : ID = 1.2 A 0 -1 10 0 0 10 1 10 VDS, Drain-Source Voltage [V] 0 1 2 3 4 5 QG, Total Gate Charge [nC] 3 FQP1N60 QFET N-CHANNEL Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 3.0 2.5 R DS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ¡Ø Note : 1. VGS = 0 V 2. ID = 250 ¥ìA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ¡Ø Note : 1. VGS = 10 V 2. ID = 0.6 A 0.5 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 1.2 Operation in This Area is Limited by R DS(on) 1 10 0.9 ID, Drain Current [A] ID, Drain Current [A] 100 µs 1 ms 0 10 10 ms DC -1 10 ¡Ø Notes : 0.6 0.3 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0.0 25 3 10 10 50 75 100 [°C] TC, Case Temperature [¡É] VDS, Drain-Source Voltage [V] D = 0 .5 10 0 ¡Ø N o te s : 1 . Z ¥ è J C ( t ) = 3 .1 3 ¡ É / W M a x . 2 . D u t y F a c t o r , D = t 1 / t2 3 . T J M - T C = P D M * Z ¥ è J C( t ) 0 .2 0 .1 0 .0 5 PDM 10 0 .0 2 -1 t1 0 .0 1 t2 s in g le p u ls e Z ¥è JC ( t) , T h e r m a l R e s p o n s e Fig 11. Thermal Response 10 -5 10 -4 10 -3 10 -2 10 -1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ] 4 10 0 10 1 125 150 QFET N-CHANNEL FQP1N60 Fig 12. Gate Charge Test Circuit & Waveform 50K 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time 5 FQP1N60 QFET N-CHANNEL Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop 6 VDD QFET N-CHANNEL FQP1N60 TO-220 Package Dimensions TO-220 (FS PKG CODE AE) 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters September 1999, Rev B 7 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SetiesTM FASTTM FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench® QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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