SG2800 Series
High Voltage Medium Current Driver Arrays
Description
Features
The SG2800 series integrates eight NPN
Darlington pairs with internal suppression diodes to
drive lamps, relays, and solenoids in many military,
aerospace, and industrial applications that require
severe environments.
All units feature open collector outputs with greater
than 50V breakdown voltages combined with
500mA current carrying capabilities.
Five different input configurations provide optimized
designs for interfacing with DTL, TTL, PMOS, or
CMOS drive signals.
These Darlington array are designed to operate
from -55°C to 125°C ambient temperature in a 18pin dual in-line ceramic (J) package and 20-pin
leadless chip carrier (LCC).
In addition a plastic version is available in 18 lead
SOWB (DW) package with a reduced temperature
range of 0°C to 70°C.





Eight NPN Darlington Pairs
Collector Currents to 600mA
Output Voltages from 50V to 95V
Internal Clamping Diodes for Inductive
loads
DTL, TTL, PMOS, or CMOS Compatible
inputs
High Reliability Features
Available To MIL-STD-883 – 883, ¶ 1.2.1
Available to DSCC
– Standard Microcircuit Drawing (SMD)
 MIL-M38510/14106BVA - SG2801J-JAN
 MIL-M38510/14107BVA - SG2802J-JAN
 MIL-M38510/14108BVA - SG2803J-JAN
 MIL-M38510/14109BVA - SG2804J-JAN
 MSC-AMS Level "S" Processing Available


Schematics (each Darlington pair)
SG2801/2811/2821
(Each Driver)
7.2kΩ
SG2802/2812
(Each Driver)
7V
+V
3kΩ
SG2803/2813/2823
(Each Driver)
+V
10kΩ
+V
2.7kΩ
7.2kΩ
3kΩ
7.2kΩ
SG2804/2814/2824
(Each Driver)
10.5kΩ
+V
SG2805/2815
(Each Driver)
3kΩ
+V
10.5kΩ
7.2kΩ
3kΩ
7.2kΩ
3kΩ
Figure 1 · Schematics (showing each Darlington pair)
November 2014 Rev. 1.7
www.microsemi.com
© 2014 Microsemi Corporation- Analog Mixed Signal
1
High Voltage Medium Current Mode PWM Controllerent Driver Array
Connection Diagrams and Ordering Information
Ambient
Temperature
Type
Package
Part Number
Packaging
Type
Connection Diagram
SG28XXJ-883B
SG2801J-JAN
1
18
SG2802J-JAN
2
17
3
16
4
15
SG2803J-JAN
-55°C to 125°C
J
18-Pin
Ceramic DIP
Package
SG2804J-JAN
5
14
SG2803J-DESC
6
13
SG2821J-DESC
7
12
8
11
9
10
CERDIP
SG2823J-DESC
SG2824J-DESC
SG28XXJ
0°C to 70°C
DW
18-Pin Plastic
SOIC
Package
DW Package: RoHS Compliant / Pbfree Transition DC: 0516
SG2803DW
SOWB
Pinout same as J package
DW Package: RoHS / Pb-free 100%
Matte Tin Lead Finish
3
SG28XXL-883B
2
1
20
19
SG2803L-DESC
-55°C to 125°C
L
20-Pin
Ceramic
Leadless Chip
Carrier
SG2821L-DESC
SG2823L-DESC
SG2824L-DESC
CLCC
4
18
5
17
6
16
7
15
14
SG28XXL
9
10
11
12
13
Note:
1.
Contact factory for JAN and DESC product availability.
2.
All parts are viewed from the top.
3.
See Selection Guide for specific device types.
4.
Hermetic Packages J, L use Pb37/Sn63 hot solder lead finish, contact factory for availability of RoHS versions.
2
Absolute Maximum Ratings1
Absolute Maximum Ratings1
Value
Units
Output Voltage, VCE
(SG2800, 2810 series)
50
V
(SG2820 series)
95
V
Input Voltage, VIN
(SG2802,3,4 series)
30
V
Continuous Input Current, IIN
25
mA
Continuous Collector Current, IC
(SG2800, 2820)
500
mA
(SG2810)
600
mA
Plastic (DW Package)
150
°C
Hermetic (J, L Packages)
150
°C
-65 to 150
C
300
°C
260 (+0, -5)
°C
Parameter
Operating Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering 10 sec.)
RoHS Peak Package Solder Reflow Temperature (40 sec. max. exp.)
Note: 1. Exceeding these ratings could cause damage to the device. All voltages are with respect to ground.
Currents are positive into, negative out of specified terminal.
Thermal Data
Value
Units
Thermal Resistance-Junction to Case, θJC
25
°C/W
Thermal Resistance-Junction to Ambient, θJA
70
°C/W
Thermal Resistance-Junction to Case, θJC
35
°C/W
Thermal Resistance-Junction to Ambient, θJA
120
°C/W
90
°C/W
Parameter
J Package
L Package
DW Package
Thermal Resistance-Junction to Ambient, θJA
Note:
1.
Junction Temperature Calculation: TJ = TA + (PD x θJA).
2.
The above numbers for θJC are maximums for the limiting thermal resistance of the package in a standard
mounting configuration. The θJA numbers are meant to be guidelines for the thermal performance of the
device/pcboard system. All of the above assume no ambient airflow.
3
High Voltage Medium Current Mode PWM Controllerent Driver Array
Recommended Operating Conditions1
Symbol
Parameter
Recommended Operating Conditions
Min.
Typ.
Units
Max.
Output Voltage
VCE
SG2800, SG2820 series
50
V
SG2810 series
95
V
350
mA
500
mA
Peak Collector Current, IC
IC
2.6
V
SG2800, SG2820 series
SG2810 series
Operating Ambient Temperature Range:
J, L Packages
-55
125
°C
DW Packages
0
70
°C
Note: 1. Range over which the device is functional.
Selection Guide
Device
VCE Max
IC Max
Logic Inputs
General Purpose
PMOS, CMOS
SG2801
SG2802
14V-25V PMOS
500mA
SG2803
5V TTL, CMOS
SG2804
6V-15V CMOS, PMOS
SG2811
General Purpose
PMOS, CMOS
50V
SG2812
14V-25V PMOS
600mA
SG2813
SG2814
6V-15V CMOS, PMOS
SG2815
High Output TTL
SG2821
General Purpose
PMOS, CMOS
SG2823
SG2824
4
5V TTL, CMOS
95V
500mA
5V TTL, CMOS
6V-15V CMOS, PMOS
Electrical Characteristics
Electrical Characteristics
(Unless otherwise specified, these specifications apply over the operating ambient temperatures of -55°C ≤
TA ≤ 125°C, for the J & L devices and 0°C ≤ TA ≤ 70°C, for the DW device. Low duty cycle pulse testing
techniques are used which maintains junction and case temperatures equal to the ambient temperature.)
Table 1 · SG2801 thru SG2804
Symbol
Parameter
ICEX
Output Leakage
Current
(Figure 2a)
Output Leakage
Current
(Figure 2b)
VCE(SAT)
IIN(ON)
Collector –
Emitter
(VCE(SAT)
(Figure 3)
Input Current
(Figure 4)
Applicable
Devices
Limits
Temp.
Test Conditions
Units
Min
All
Type
Max
VCE = 50V
100
µA
SG2802
VCE = 50V, VIN = 6V
500
µA
SG2804
VCE = 50V, VIN = 1V
500
µA
All
TA = TMIN
TA = TMIN
IC = 350mA, IB = 850µA
IC = 200mA, IB = 550µA
1.6
1.3
1.8
1.5
V
TA = TMIN
TA = 25°C
IC = 100mA, IB = 350µA
IC = 350mA, IB = 500µA
1.1
1.25
1.3
1.6
V
V
TA = 25°C
TA = 25°C
IC = 200mA, IB = 350µA
IC = 100mA, IB = 250µA
1.1
0.9
1.3
1.1
V
V
TA = TMAX
TA = TMAX
IC = 350mA, IB = 500µA
IC = 200mA, IB = 350µA
1.6
1.3
1.8
1.5
V
V
TA = TMAX
IC = 100mA, IB = 250µA
1.1
1.3
V
SG2802
VIN = 17V
480
850
1300
µA
SG2803
VIN = 3.85V
650
930
1350
µA
VIN = 5V
240
350
500
µA
VIN = 12V
650
1000
1450
µA
TA = TMAX
IC = 500µA
25
50
TA = TMIN
VCE = 2V, IC = 300mA
18
V
TA = TMAX
TA = TMIN
VCE = 2V, IC = 300mA
VCE = 2V, IC = 200mA
13
3.3
V
V
TA = TMIN
TA = TMIN
VCE = 2V, IC = 250mA
VCE = 2V, IC = 300mA
3.6
3.9
V
V
TA = TMAX
TA = TMAX
VCE = 2V, IC = 200mA
VCE = 2V, IC = 250mA
2.4
2.7
V
V
TA = TMAX
TA = TMIN
VCE = 2V, IC = 300mA
VCE = 2V, IC = 125mA
3.0
6.0
V
V
TA = TMIN
TA = TMIN
VCE = 2V, IC = 200mA
VCE = 2V, IC = 275mA
8.0
10
V
V
TA = TMIN
TA = TMAX
VCE = 2V, IC = 350mA
VCE = 2V, IC = 125mA
12
5.0
V
V
TA = TMAX
TA = TMAX
VCE = 2V, IC = 200mA
VCE = 2V, IC = 275mA
6.0
7.0
V
V
TA = TMAX
VCE = 2V, IC = 350mA
8.0
V
SG2804
IIN(OFF)
Input Current
(Figure 5)
All
SG2802
SG2803
VIN(ON)
V
Input Voltage
(Figure 6)
SG2804
µA
5
High Voltage Medium Current Mode PWM Controllerent Driver Array
Applicable
Devices
Temp.
Symbol
Parameter
hFE
D-C Forward
Current Transfer
Ratio (Figure 3)
CIN
Input
1
Capacitance
TA = 25°C
TPLH
Turn-On Delay
TA = 25°C
TPHL
Turn-Off Delay
TA = 25°C
IR
Clamp Diode
Leakage Current
(Figure 7)
VF
Clamp Diode
Forward Voltage
(Figure 8)
SG2801
Test Conditions
Limits
Min
Units
Type
Max
15
25
pF
0.5 EIN to 0.5 EOUT
250
1000
ns
0.5 EIN to 0.5 EOUT
250
1000
ns
50
µA
2.0
V
TA = TMIN
VCE = 2V, IC = 350mA
500
TA = 25°C
VCE = 2V, IC = 350mA
1000
All
VR = 50V
1.7
IF = 350mA
Note: ¹This parameter, although guaranteed, are not tested in production.
Table 2 · SG2811 thru SG2815
Symbol
Parameter
ICEX
Output Leakage
Current
(Figure 2a)
Output Leakage
Current
(Figure 2b)
VCE(SAT)
IIN(ON)
Collector –
Emitter
(VCE(SAT)
(Figure 3)
Input Current
(Figure 4)
Applicable
Devices
Limits
Temp.
Units
Min
All
Type
Max
VCE = 50V
100
µA
SG2812
VCE = 50V, VIN = 6V
500
µA
SG2814
VCE = 50V, VIN = 1V
500
µA
All
TA = TMIN
IC = 500mA, IB = 1100µA
1.8
1.1
V
TA = TMIN
IC = 350mA, IB = 850µA
1.6
1.8
V
TA = TMIN
IC = 200mA, IB = 550µA
1.3
1.5
V
TA = 25°C
IC = 500mA, IB = 600µA
1.7
1.9
V
TA = 25°C
IC = 350mA, IB = 500µA
1.25
1.6
V
TA = 25°C
IC = 200mA, IB = 350µA
1.1
1.3
V
TA = TMAX
IC = 500mA, IB = 600µA
1.8
2.1
V
TA = TMAX
IC = 350mA, IB = 500µA
1.6
1.8
V
TA = TMAX
IC = 200mA, IB = 350µA
1.3
1.5
V
SG2812
VIN = 17V
480
850
1300
µA
SG2813
VIN = 3.85V
650
930
1350
µA
VIN = 5V
240
350
500
µA
VIN = 12V
650
1000
1450
µA
VIN = 3V
1180
1500
2400
µA
25
50
SG2814
SG2815
IIN(OFF)
Input Current
(Figure 5)
All
VIN(ON)
Input Voltage
(Figure 6)
SG2812
6
Test Conditions
TA = TMAX
IC = 500µA
TA = TMIN
VCE = 2V, IC = 500mA
VCE = 2V, IC = 500mA
TA = TMAX
µA
23.5
17
V
V
Electrical Characteristics
Symbol
Parameter
Applicable
Devices
SG2813
VIN(ON)
Input Voltage
(Figure 6)
SG2814
Limits
Temp.
Test Conditions
Units
Min
Type
Max
TA = TMIN
VCE = 2V, IC = 250mA
3.6
V
TA = TMIN
VCE = 2V, IC = 300mA
3.9
V
TA = TMIN
VCE = 2V, IC = 500mA
6.0
V
TA = TMAX
VCE = 2V, IC = 250mA
2.7
V
TA = TMAX
VCE = 2V, IC = 300mA
3.0
V
TA = TMAX
VCE = 2V, IC = 500mA
3.5
V
TA = TMIN
VCE = 2V, IC = 275mA
10
V
TA = TMIN
VCE = 2V, IC = 350mA
12
V
TA = TMIN
VCE = 2V, IC = 500mA
17
V
TA = TMAX
VCE = 2V, IC = 275mA
7.0
V
TA = TMAX
VCE = 2V, IC = 350mA
8.0
V
TA = TMAX
VCE = 2V, IC = 500mA
9.5
V
TA = TMIN
VCE = 2V, IC = 350mA
3.0
V
TA = TMIN
VCE = 2V, IC = 500mA
3.5
V
TA = TMAX
VCE = 2V, IC = 350mA
2.4
V
TA = TMAX
VCE = 2V, IC = 500mA
2.6
V
TA = TMIN
VCE = 2V, IC = 500mA
450
TA = 25°C
VCE = 2V, IC = 500mA
900
15
25
pF
SG2815
hFE
D-C Forward
Current Transfer
Ratio (Figure 3)
SG2811
CIN
Input
1
Capacitance
TA = 25°C
TPLH
Turn-On Delay
TA = 25°C
0.5 EIN to 0.5 EOUT
250
1000
ns
TPHL
Turn-Off Delay
TA = 25°C
0.5 EIN to 0.5 EOUT
250
1000
ns
IR
Clamp Diode
Leakage Current
(Figure 7)
50
µA
Clamp Diode
Forward Voltage
(Figure 8)
2.0
V
VF
2.5
V
All
VR = 50V
IF = 350mA
1.7
IF = 500mA
Note: ¹This parameter, although guaranteed, are not tested in production.
Table 3 · SG2821 thru SG2824
Symbol
Parameter
Output Leakage
Current
(Figure 2a)
ICEX
Output
Leakage
Current
Applicable
Devices
All
SG2824
Limits
Temp.
Test Conditions
Units
Min
Type
Max
VCE = 95V
100
µA
VCE = 95V, VIN = 1V
500
µA
(Figure 2b)
7
High Voltage Medium Current Mode PWM Controllerent Driver Array
Symbol
VCE(SAT)
Parameter
Collector –
Emitter
(VCE(SAT)
(Figure 3)
Applicable
Devices
All
IC = 350mA, IB = 850µA
Limits
Type
1.6
Max
1.8
IC = 200mA, IB = 550µA
1.3
1.5
V
TA = TMIN
IC = 100mA, IB = 350µA
1.1
1.3
V
TA = 25°C
IC = 350mA, IB = 500µA
1.25
1.6
V
TA = 25°C
IC = 200mA, IB = 350µA
1.1
1.3
V
TA = 25°C
IC = 100mA, IB = 250µA
0.9
1.1
V
TA = TMAX
IC = 350mA, IB = 500µA
1.6
1.8
V
TA = TMAX
IC = 200mA, IB = 350µA
1.3
1.5
V
TA = TMAX
IC = 100mA, IB = 250µA
1.1
1.3
V
Temp.
Test Conditions
TA = TMIN
TA = TMIN
IIN(ON)
IIN(OFF)
Input Current
(Figure 5)
SG2823
VIN(ON)
Input Voltage
(Figure 6)
SG2824
TPLH
D-C Forward
Current
Transfer Ratio
(Figure 3)
Input
1
Capacitance
Turn-On Delay
TPHL
Turn-Off Delay
IR
Clamp Diode
Leakage
Current
(Figure 7)
VF
Clamp Diode
Forward
Voltage
(Figure 8)
hFE
CIN
930
1350
µA
VIN = 5V
240
350
500
µA
VIN = 12V
650
1000
1450
µA
TA = TMAX
IC = 500µA
25
50
TA = TMIN
VCE = 2V, IC = 200mA
3.3
V
TA = TMIN
VCE = 2V, IC = 250mA
3.6
V
TA = TMIN
VCE = 2V, IC = 300mA
3.9
V
TA = TMAX
VCE = 2V, IC = 200mA
2.4
V
TA = TMAX
VCE = 2V, IC = 250mA
2.7
V
TA = TMAX
VCE = 2V, IC = 300mA
3.0
V
TA = TMIN
VCE = 2V, IC = 125mA
6.0
V
TA = TMIN
VCE = 2V, IC = 200mA
8.0
V
TA = TMIN
VCE = 2V, IC = 275mA
10
V
TA = TMIN
VCE = 2V, IC = 350mA
12
V
TA = TMAX
VCE = 2V, IC = 125mA
5.0
V
TA = TMAX
VCE = 2V, IC = 200mA
6.0
V
TA = TMAX
VCE = 2V, IC = 275mA
7.0
V
TA = TMAX
VCE = 2V, IC = 350mA
8.0
V
TA = TMIN
VCE = 2V, IC = 350mA
500
TA = 25°C
VCE = 2V, IC = 350mA
1000
15
25
pF
0.5 EIN to 0.5 EOUT
250
1000
ns
0.5 EIN to 0.5 EOUT
250
1000
ns
50
µA
2.0
V
µA
SG2821
TA = 25°C
All
VR = 95V
IF = 350mA
Note: ¹This parameter, although guaranteed, are not tested in production.
8
V
650
SG2824
All
Units
VIN = 3.85V
SG2823
Input Current
(Figure 4)
Min
1.7
Parameter Test Figures
Parameter Test Figures
(See figure numbers in Electrical Characteristics Tables 1 to 3)
OPEN
VCE
OPEN
OPEN
VCE
ICEX
ICEX
µA
µA
hFE =
OPEN
VIN
IB
Figure 2a
ICEX Test Circuit
Figure 2b
ICEX Test Circuit
V
VCE
IC
IB
IC
Figure 3
hFE, VCE(sat) Test Circuit
OPEN
OPEN
VCE
µA
IC
mA
µA
OPEN
Figure 4
IIN (ON) Test Circuit
OPEN
Figure 5
IIN (OFF) Test Circuit
VR
µA
IR
V
OPEN
V
IF
OPEN
V
VCE
Figure 6
VIN(ON) Test Circuit
IC
Figure 7
IR Test Circuit
Figure 8
VF Test Circuit
9
High Voltage Medium Current Mode PWM Controllerent Driver Array
Characteristic Curves
400
500
300
Output Current - (mA)
Collection Current - (mA)
600
400
300
200
100
0
0
.2
.4
.6
1.0 1.2
.8
2801
2804
2803
100
0
1.4 1.6 1.8
0
1
2
Saturation Voltage - (V)
3
4
5
8
9
10
11
12
Input Voltage - (V)
Figure 8 · Output Characteristics
Figure 9 · Output Current Vs. Input Voltage
400
2.5
2.0
Input Current - (mA)
300
Output Current - (mA)
2802
200
All Types
200
100
Maximum
1.5
1.0
Typical
0.5
0
0
0
50 100 150
200 250 300 350 400
0
12
14
16
18
20
22
24
26
Input Voltage - (V)
Input Current - (µA)
Figure 10 · Output Current Vs. Input Current
Figure 11 · Input Characteristics - SG2802
2.5
2.5
2.0
2.0
Input Current - (mA)
Input Current - (mA)
Maximum
1.5
1.0
Typical
0.5
Maximum
1.0
Typical
0.5
0
0
0
10
2.0 3.0
4.0
5.0
6.0
7.0 8.0
Input Voltage - (V)
Figure 12 · Input Characteristics - SG2803
10
1.5
0
5.0
6.0 7.0
8.0
9.0
10
11
Input Voltage - (V)
Figure 13 · Input Characteristics - SG2804
12
Characteristic Curves - Continued
Characteristic Curves - Continued
o
Peak Collector Current in mA at +70 C
600
Recommended maximum current - SG2804
2
400
3
4
5
6
7
200
Number of outputs
Conducting
simultaniously
0
0
20
40
60
80
100
Percent Duty Cycle - (%)
Figure 14 · Peak Collector Current Vs. Duty Cycle
11
High Voltage Medium Current Mode PWM Controllerent Driver Array
Package Outline Dimensions
Controlling dimensions are in inches, metric equivalents are shown for general information.
Dim
D
18
MAX
MIN
MAX
A
A1
A2
2.06
0.10
2.03
2.65
0.30
2.55
0.081
0.004
0.080
0.104
0.012
0.100
B
c
D
0.25
0.23
-
0.51
0.32
13.21
0.010
0.009
-
0.020
0.013
0.520
E
7.40
7.75
0.291
0.305
e
H
1.27 BSC
10.00
10.65
E
9
1
e
B
L
A2
A
Seating Plane
A1
c
INCHES
MIN
10
H
MILLIMETERS
L
Θ
*LC
0.4
0
-
1.27
8
0.10
0.50 BSC
0.394
0.419
0.016
0
-
0.050
8
0.004
*Lead coplanarity
Note:
Dimensions do not include protrusions; these shall not
exceed 0.155mm (.006”) on any side. Lead dimension
shall not include solder coverage.
Figure 15 · DW Package Dimensions
12
Package Outline Dimensions
Package Outline Dimensions
Controlling dimensions are in inches, metric equivalents are shown for general information.
A
B
C
MILLIMETERS
MIN
MAX
24.38
5.59
7.11
5.08
INCHES
MIN
MAX
0.960
0.220
0.280
0.200
D
F
G
0.38
0.51
1.02
1.77
2.54 BSC
0.015
0.020
0.040
0.070
0.100 BSC
H
J
K
0.20
3.18
2.03
0.38
5.08
0.008
0.125
0.080
0.015
0.200
L
M
7.37
-
7.87
15°
0.290
-
0.310
15°
Dim
A
10
B
18
9
1
L
C
F
K
Seating Plane
H
J
M
D
G
Note:
Dimensions do not include protrusions; these shall not
exceed 0.155mm (.006”) on any side. Lead dimension
shall not include solder coverage.
Figure 16 · J 18-Pin Ceramic Dual Inline Package Dimensions
E3
D
Dim
MILLIMETERS
MIN
MAX
INCHES
MIN
MAX
D/E
E3
e
8.64
9.14
8.128
1.270 BSC
0.340
0.360
0.320
0.050 BSC
B1
L
A
0.635 TYP
1.02
1.52
1.626
2.286
0.025 TYP
0.040
0.060
0.064
0.090
h
A1
A2
1.016 TYP
1.372
1.68
1.168
0.040 TYP
0.054
0.066
0.046
L2
B3
1.91
2.41
0.203R
0.075
0.95
0.008R
E
A
A1
L2
L
8
3
Note:
1
13
1. All exposed metalized area shall be gold plated 60
micro-inch minimum thickness over nickel plated unless
otherwise specified in purchase order.
h
A2
18
B1
e
B3
Figure 17 · L 20-Pin Ceramic Leadless Chip Carrier (LCC) Package Outline Dimensions
13
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor
and system solutions for communications, defense & security, aerospace and industrial
markets. Products include high-performance and radiation-hardened analog mixed-signal
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SG2800–1.7/11.14